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Title:
WAFER POLISHING METHOD AND WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/130800
Kind Code:
A1
Abstract:
A wafer polishing method according to the present invention comprises: a step for obtaining a first correlation, which is a correlation between alkali concentration and chemical polishing rate, using a plurality of polishing solutions having different alkali concentrations, and obtaining a second correlation, which is a correlation between abrasive particle concentration and mechanical polishing rate, using a plurality of polishing solutions having different abrasive particle concentrations; a step for calculating the mechanical polishing rate/the chemical polishing rate, which is the ratio of the mechanical polishing rate to the chemical polishing rate, for the plurality of polishing solutions, on the basis of the first correlation and the second correlation; a step for acquiring the relationship between the ratio of the mechanical polishing rate to the chemical polishing rate and a wafer flatness index, and determining a specific range of ratios of the mechanical polishing rate to the chemical polishing rate; a step for selecting a first target polishing solution for which the ratio of the mechanical polishing rate to the chemical polishing rate is within the specific range, on the basis of the first correlation and the second correlation; and a step for polishing a wafer using the first target polishing solution. A wafer manufacturing method according to the present invention includes a step for carrying out a polishing process using the aforementioned wafer polishing method.

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Inventors:
LIN CHIH HAO (TW)
TAKAISHI KAZUSHIGE (TW)
Application Number:
PCT/JP2021/039884
Publication Date:
June 23, 2022
Filing Date:
October 28, 2021
Export Citation:
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Assignee:
SUMCO CORP (JP)
International Classes:
B24B1/00; B24B37/00; B24B37/005; H01L21/304
Foreign References:
JP2002184733A2002-06-28
JP2018074086A2018-05-10
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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