Title:
WASTE LIQUID TREATMENT METHOD AND WASTE LIQUID TREATMENT APPARATUS
Document Type and Number:
WIPO Patent Application WO/2016/167178
Kind Code:
A1
Abstract:
In the present invention, the surface of a semiconductor substrate is treated with a liquid chemical in a surface-treatment unit. The liquid chemical, in which a metal dissolved by the substrate treatment, is discharged into a storage tank and stored. A deficient-complex polyacid that has deficient areas is supplied into the storage tank by a polyacid supply unit. The deficient-complex polyacid having deficient areas is mixed with the used metal-containing liquid chemical, and the pH value of the resulting mixed solution is set at 2-3, whereby the metal dissolved in the liquid chemical is incorporated into the deficient areas of the polyacid. Counter-cations are introduced and the polyacid containing the incorporated metal is caused to precipitate and separated from the liquid chemical, whereby the metal contained in the liquid chemical during treatment of the semiconductor substrate can be removed and the liquid chemical reclaimed.
Inventors:
HIGUCHI AYUMI (JP)
Application Number:
PCT/JP2016/061412
Publication Date:
October 20, 2016
Filing Date:
April 07, 2016
Export Citation:
Assignee:
SCREEN HOLDINGS CO LTD (JP)
International Classes:
H01L21/306; C02F1/62
Foreign References:
| JP2013051305A | 2013-03-14 | |||
| JP2006509616A | 2006-03-23 | |||
| US20050159307A1 | 2005-07-21 |
Other References:
YAVARI, R. ET AL.: "Synthesis, Ion Exchange Properties, and Applications of Amorphous Cerium (III) Tungstosilicate", SEPERATION SCIENCE AND TECHNOLOGY, vol. 43, no. 15, 16 December 2008 (2008-12-16), pages 3920 - 3935, XP055321814
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
Hidetoshi Yoshitake (JP)
Hidetoshi Yoshitake (JP)
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