Title:
WIDE-BANDGAP SEMICONDUCTOR DEVICE PRODUCTION METHOD, WIDE-BANDGAP SEMICONDUCTOR WAFER, AND WIDE-BANDGAP SEMICONDUCTOR CHIP
Document Type and Number:
WIPO Patent Application WO/2017/010223
Kind Code:
A1
Abstract:
In the present invention, a dicing region and an alignment mark region are formed on a main surface. A wide-bandgap semiconductor wafer and a photomask are aligned using the alignment mark region. After the step for performing the alignment, a p-type region is formed so as to overlap the alignment mark region. By cutting the wide-bandgap semiconductor wafer along the dicing region, a plurality of chips are formed. The p-type region does not exist on parts of the dicing region which have been left on the plurality of chips.
Inventors:
HORII TAKU (JP)
HIYOSHI TORU (JP)
UCHIDA KOSUKE (JP)
HIYOSHI TORU (JP)
UCHIDA KOSUKE (JP)
Application Number:
PCT/JP2016/067898
Publication Date:
January 19, 2017
Filing Date:
June 16, 2016
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/336; G03F7/20; H01L21/301; H01L29/06; H01L29/12; H01L29/78
Foreign References:
| JPS63314831A | 1988-12-22 | |||
| JP2015019014A | 2015-01-29 | |||
| JP5479616B2 | 2014-04-23 | |||
| JP2003332270A | 2003-11-21 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
Download PDF: