Title:
WIDE GAP SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/092871
Kind Code:
A1
Abstract:
A wide gap semiconductor device, having: a drift layer 12 in which a first-conductivity-type wide gap semiconductor material is used; a plurality of second-conductivity-type well regions 20 formed on the drift layer 12; a polysilicon layer 150 provided to the well regions 20, and to the drift layer 12 between the well regions 20; an interlayer insulation film 65 provided to the polysilicon layer 150; a gate pad 120 provided to the interlayer insulation film 65; and a source pad 110 electrically connected to the polysilicon layer 150.
Inventors:
NAKAMURA SHUNICHI (JP)
Application Number:
PCT/JP2017/040676
Publication Date:
May 16, 2019
Filing Date:
November 13, 2017
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG (JP)
International Classes:
H01L29/12; H01L29/06; H01L29/78
Domestic Patent References:
| WO2012001837A1 | 2012-01-05 |
Foreign References:
| JP2016058498A | 2016-04-21 | |||
| JP2016149554A | 2016-08-18 | |||
| JP2013120784A | 2013-06-17 | |||
| JP2003318413A | 2003-11-07 | |||
| JP2015056543A | 2015-03-23 | |||
| JP2015056543A | 2015-03-23 |
Other References:
See also references of EP 3712952A4
Attorney, Agent or Firm:
OHNO Seiji et al. (JP)
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