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Patent Searching and Data


Title:
WIRING FORMATION METHOD AND ETCHING SOLUTION
Document Type and Number:
WIPO Patent Application WO/2015/146250
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a wiring formation method which makes it possible to minimize the side etching of a copper wiring pattern, and an etching solution to be used therein. This wiring formation method involves contacting an etching solution and one part of a copper layer (3) of a layered plate (100) obtained by layering the copper layer (3) on a substrate (1), and forming a copper wiring pattern (7) by etching the one part of the copper layer (3). The copper layer (3) has a thickness of 1.5μm or less. The etching solution is an acidic aqueous solution containing 0.1-3 wt% of a cupric ion, 0.1-30 wt% of a halide ion, and 0.05-20 wt% of polyalkylene glycol. This wiring formation method involves setting the temperature of the etching solution when etching the copper layer (3) to (T-10)°C or higher. T is the temperature at which the etching solution starts to become turbid.

Inventors:
SAITO SATOSHI (JP)
Application Number:
PCT/JP2015/051531
Publication Date:
October 01, 2015
Filing Date:
January 21, 2015
Export Citation:
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Assignee:
MEC CO LTD (JP)
International Classes:
C23F1/18; H05K3/06
Domestic Patent References:
WO2014171174A12014-10-23
Foreign References:
JP2006111953A2006-04-27
JPH0633268A1994-02-08
Attorney, Agent or Firm:
SHINTAKU, Masato et al. (JP)
Masahito Shintaku (JP)
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