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Patent Searching and Data


Title:
WORD LINE DRIVE CIRCUIT, WORD LINE DRIVER, AND STORAGE APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/245746
Kind Code:
A1
Abstract:
The embodiments of the present disclosure relate to a word line drive circuit, a word line driver, and a storage apparatus. The word line drive circuit comprises: at least two sub-word line drivers, wherein each sub-word line driver is connected to a main word line and a sub-word line, which main word line is used for providing an enable signal. The sub-word line driver comprises a holding transistor, wherein a first end and a second end of the holding transistor are respectively connected to different sub-word lines, and a gate electrode of the holding transistor receives a second drive signal; and the sub-word line driver is configured to provide a first drive signal to a selected sub-word line in response to the first drive signal and the enable signal, wherein the selected sub-word line is a sub-word line which is connected to the first end or the second end of the holding transistor; and the sub-word line driver is further configured to connect the first end and the second end of the holding transistor in response to the first drive signal, the enable signal, and the second drive signal.

Inventors:
WANG LUGUANG (CN)
Application Number:
PCT/CN2022/104750
Publication Date:
December 28, 2023
Filing Date:
July 08, 2022
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C8/08; G11C8/14
Foreign References:
KR20010055932A2001-07-04
US6222789B12001-04-24
CN113012734A2021-06-22
CN114496019A2022-05-13
CN114512486A2022-05-17
CN202210731404A2022-06-24
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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