Title:
WORKPIECE CUTTING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/193966
Kind Code:
A1
Abstract:
This workpiece cutting method is provided with: a first step of preparing a workpiece having a single crystal silicon substrate and a functional element layer provided on a first primary surface side; a second step of irradiating the workpiece with a laser beam to form at least one row of modified regions, inside the single crystal silicon substrate, along each of a plurality of cutting scheduled lines, and forming a crack, in the workpiece, along each of the plurality of cutting scheduled lines so that the crack extends between the at least one row of modified regions and a second primary surface of the workpiece; a third step of forming an etching protective layer having a gas passing region formed along each of the plurality of cutting scheduled lines, on the second primary surface; and a fourth step of performing dry etching on the work piece from the second primary surface side, and thereby forming, in the workpiece, grooves which open to the second primary surface and are formed along each of the plurality of cutting scheduled lines, the dry etching being performed in a state in which the etching protective layer is formed on the secondary primary surface.
Inventors:
SAKAMOTO TAKESHI (JP)
Application Number:
PCT/JP2018/015410
Publication Date:
October 25, 2018
Filing Date:
April 12, 2018
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
B23K26/53; H01L21/301
Domestic Patent References:
| WO2008146744A1 | 2008-12-04 |
Foreign References:
| JP2009039755A | 2009-02-26 | |||
| JP2013055120A | 2013-03-21 | |||
| JP2006210401A | 2006-08-10 | |||
| JP2012028645A | 2012-02-09 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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