Title:
WRAP-AROUND-CONTACT FOR 2D-CHANNEL GATE-ALL-AROUND FIELD-EFFECT-TRANSISTORS
Document Type and Number:
WIPO Patent Application WO/2023/098502
Kind Code:
A1
Abstract:
FETs with channels that form wrap-around contacts (a female portion of a female/male connection) with metal contacts (amale portion of the female/male connection) are provided in order to connect the channels to the drain and source regions. In one embodiment, a first conductive contact is formed underneath a dummy channel. In addition an encapsulation material wraps around the first conductive contact. The dummy channel and the encapsulation material can then be removed and replaced by the material of the channel which, as a result, include a female portion that wraps around the first conductive contact.
Inventors:
FROUGIER JULIEN (US)
XIE RUILONG (US)
CHENG KANGGUO (US)
PARK CHANRO (US)
GAUL ANDREW (US)
XIE RUILONG (US)
CHENG KANGGUO (US)
PARK CHANRO (US)
GAUL ANDREW (US)
Application Number:
PCT/CN2022/133196
Publication Date:
June 08, 2023
Filing Date:
November 21, 2022
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H01L29/786; H01L29/205
Foreign References:
| US20190386145A1 | 2019-12-19 | |||
| US4262296A | 1981-04-14 | |||
| CN107039515A | 2017-08-11 | |||
| CN113206091A | 2021-08-03 | |||
| CN114613850A | 2022-06-10 |
Attorney, Agent or Firm:
ZHONGZI LAW OFFICE (CN)
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