X-RAY SOURCES USING LINEAR ACCUMULATION

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This Patent Application claims priority to and the benefit of U.S. Provisional Patent Application Nos. 61/880, 151 , filed on Sept. 19, 2013, 61/894,073; filed on Oct. 22, 2013; 61/93 1,519 filed on Jan. 24, 2014; 62/008,856, filed on Jun. 6, 2014; and 14/490,672 filed Sept. 19, 2014; all of which are incorporated herein by reference in their entirety. This application is also related to U.S. Patent Application 14/465,816, filed Aug. 21 , 2014, which is hereby incorporated by reference in its entirety and partially included as Appendix A.

FIELD

[0002] The embodiments disclosed herein relate to high-brightness sources of x-rays. Such high brightness sources may be useful for a variety of applications in which x-rays are employed, including manufacturing inspection, metrology, crystallography, structure and composition analysis and medical imaging and diagnostic systems. BACKGROUND

[0003] The initial discovery of x-rays by Rontgen in 1895 [W.C. Rontgen, "Eine Neue Art von Strahlen (Wiirzburg Verlag, 1895); "On a New Kind of Rays," Nature, Vol. 53, pp. 274- 276 (Jan. 23 1896)] occurred by accident when Rontgen was experimenting with electron bombardment of targets in vacuum tubes. These high energy, short wavelength photons are now routinely used for medical applications and diagnostic evaluations, as well as for security screening, industrial inspection, quality control and failure analysis, and for scientific applications such as crystallography, tomography, x-ray fluorescence analysis and the like.

[0004] The laboratory x-ray source was later improved by Coolidge in the early 20 ^th century [see, for example, William D. Coolidge, U.S. Patents 1,211,092, issued Jan. 2, 1917, 1 ,917,099, issued Jul. 4, 1933, and 1,946,312, issued Feb. 6, 1934], and, later in the 20 ^th century, systems generating very intense beams of x-rays using synchrotrons or free electron lasers (FELs) have been developed. These synchrotron or FEL systems, however, are physically very large systems, requiring large buildings and acres of land for their implementation. For compact, practical lab-based systems and instruments, most x-ray sources today still use the fundamental mechanism of the Coolidge tube.

[0005] An example of the simplest x-ray source, a transmission x-ray source 08, is illustrated in FIG. 1 The source comprises a vacuum environment (typically 10 ^"6 torr or better) commonly provided by a sealed vacuum tube 02 or active pumping, manufactured with sealed electrical leads 21 and 22 that pass from the negative and positive terminals of a high voltage source 10 outside the tube to the various elements inside the vacuum tube 02. The source 08 will typically comprise mounts 03 which secure the vacuum tube 02 in a housing 05, and the housing 05 may additionally comprise shielding material, such as lead, to prevent x-rays from being radiated by the source 08 in unwanted directions.

[0006] Inside the vacuum tube 02, an emitter 1 1 connected through the lead 21 to the high voltage source 10 serves as a cathode and generates a beam of electrons 1 1 1 , often by running a current through a filament. The target 01 is electrically connected to the opposite high voltage lead 22 to be at low voltage, thus serving as an anode. The emitted electrons 1 1 1 accelerate towards the target 01 and collide with it at high energy, with the energy of the electrons determined by the magnitude of the accelerating voltage. The collision of the electrons 1 1 1 into the solid target 01 induces several effects, including the emission of x-rays 888, some of which exit the vacuum tube 02 through a window 04 designed to transmit x-rays. In the configuration shown in FIG. 1, the target 01 is deposited or mounted directly on the window 04 and the window 04 forms a portion of the wall of the vacuum chamber. In other prior art embodiments, the target may be formed as an integral part of the window 04 itself.

[0007] Another example of a common x-ray source design is the reflection x-ray source 80, is illustrated in FIG. 2. Again, the source comprises a vacuum environment (typically 10 ^"6 torr or better) commonly maintained by a sealed vacuum tube 20 or active pumping, and manufactured with sealed electrical leads 21 and 22 that pass from the negative and positive terminals of a high voltage source 10 outside the tube to the various elements inside the vacuum tube 20. The source 80 will typically comprise mounts 30 which secure the vacuum rube 20 in a housing 50, and the housing 50 may additionally comprise shielding material, such as lead, to prevent x-rays from being radiated by the source 80 in unwanted directions.

[0008] Inside the tube 20, an emitter 1 1 connected through the lead 21 to the high voltage source 10 serves as a cathode and generates a beam of electrons 11 1 , often by running a current through a filament. A target 100 supported by a target substrate 1 10 is electrically connected to the opposite high voltage lead 22 and target support 32 to be at low voltage, thus serving as an anode. The electrons 1 1 1 accelerate towards the target 100 and collide with it at high energy, with the energy of the electrons determined by the magnitude of the accelerating voltage. The collision of the electrons 1 1 1 into the target 100 induces several effects, including the emission of x-rays, some of which exit the vacuum tube 20 and are transmitted through a window 40 that is transparent to x-rays.

[0009] In an alternative prior art embodiment for a reflective x-ray source (not shown in FIG. 2), the target 100 and substrate 1 10 may be integrated or comprise a solid block of the same material, such as copper (Cu). Also not shown in FIGs. 1 and 2, but commonly employed in practice, electron optics (electrostatic or electromagnetic lenses) may be provided to guide and shape the path of the electrons, forming a more concentrated, focused beam at the target.

Likewise, electron sources comprising multiple emitters may be provided to provide a larger, distributed source of electrons.

[0010] When the electrons collide with a target 100, they can interact in several ways. These are illustrated in FIG. 3. The electrons in the electron beam 1 1 1 collide with the target 100 at its surface 102, and the electrons that pass through the surface transfer their energy into the target 100 in an interaction volume 200, generally defined by the incident electron beam footprint (area) times the electron penetration depth. For an incident electron beam of very small size (e.g. a beam diameter <100nm) the interaction volume 200 is typically "pear" or "teardrop" shaped in three dimensions, and symmetric around the electron propagation direction. For a larger beam, the interaction volume will be represented by the convolution of this "teardrop" shape with the lateral beam intensity profile.

[0011] An equation commonly used to estimate the penetration depth for electrons into a material is Pott's Law [P.J. Potts, Electron Probe Microanalysis, Ch. 10 of A Handbook of Silicate Rock Analysis, Springer Netherlands, 1987, p. 336)], which states that the penetration depth x in microns is related to the 10% of the value of the electron energy Eo in keV raised to the 3/2 power, divided by the density of the material:

E ^{1 5}

χ (μπι) = O. l x - ⁵ — [Eqn. 1]

P

For less dense material, such as a diamond substrate, the penetration depth is much larger than for a material with greater density, such as most elements used for x-ray generation.

[0012] There are several energy transfer mechanisms that can occur. Throughout the interaction volume 200, electron energy may simply be converted into heat. Some absorbed energy may excite the generation of secondary electrons, typically detected from a region 221 located near the surface, while some electrons may also be backscattered, which, due to their higher energy, can be detected from a somewhat larger region 231.

[0013J Throughout the interaction volume 200, including in the regions 221 and 231 near the surface and extending approximately 3 times deeper into the target 100, x-rays 888 are generated and radiated outward in all directions. The x-ray emission can have a complex energy spectrum. As the electrons penetrate the material, they decelerate and lose energy, and therefore different parts of the interaction volume 200 produce x-rays with different properties. A typical x-ray radiation spectrum for emission from the collision of

100 keV electrons with a tungsten target is illustrated in FIG. 4.

[0014] As shown in FIG. 4, the broad spectrum x-ray emission 388 arises from electrons that were diverted from their initial trajectory, depending on how close they pass to various nuclei and other electrons. The reduction in electron energy and the change momentum associated with the change in direction generate the radiation of x-rays. Because a wide range of deflections and decelerations can occur, due to the proximity statistics of the electron collisions with the atoms of the target material, the change in energy is a continuum, and therefore, the energy of the generated x-rays also is a continuum. Greater emission occurs at the low end of the energy spectrum, with far less occurring at higher energy, and reaching an absolute limit of no x- rays with energy larger than the original electron energy (in this example, 100 keV). Due to their origin in deceleration of electrons, this kind of continuum x-ray emission 388 is commonly called bremsstrahlung, after the German word "bremsen" for "braking".

[0015] These continuum x-rays 388 are generated throughout the interaction volume, shown in FIG. 3 as the largest shaded portion 288 of the interaction volume 200. At lower energy, the bremsstrahlung x-rays 888 are typically emitted isotropically, i.e. with little variation in intensity with emission direction [see, for example, D. Gonzales, B. Cavness, and S. Williams, "Angular distribution of thick-target bremsstrahlung produced by electrons with initial energies ranging from 10 to 20 keV incident on Ag", Phys. Rev. A, vol. 84, 052726 (201 1)], higher energy excitation can have increased emission normal to the electron beam, i.e. at "0 degrees" for an incident beam at 90 degrees with respect to the target surface.

[See, for example, J.G. Chervenak and A. Liuzzi, "Experimental thick-target bremsstrahlung spectra from electrons in the range 10 to 30 kev", Phys. Rev. A, vol. 12(1), pp. 26-33 (July, 1975).]

[0016] As was shown in FIGs. 1 and 2, the x-ray source 08 or 80 will typically have a window 04 or 40. This window 04 or 40 may additionally comprise a filter, such as a sheet or layer of aluminum, that attenuates the low energy x-rays, producing the modified energy spectrum 488 shown in FIG. 4.

[0017] When the electron energy is larger than the binding energy of an inner-shell (core-shell) electron of an element within the target, ejection of the electron (ionization) from the shell may occur, creating a vacancy. Electrons from less strongly bound outer shell(s) are then free to transition to the vacant inner shell, filling the vacancy. As the filling electron moves down to the lower energy level, the excess energy is emitted in the form of an x-ray photon. This is known as "characteristic" radiation because the energy of the photon is characteristic of the chemical element that generates the photon.

[0018] In the example shown in FIG. 4, an electron of 100 keV may ionize a

K-shell electron of a tungsten atom, which has a binding energy of 69.5 keV. If the vacancy is filled by an electron from the L-shell, which has a binding energy of 10.2 keV, the x-ray photon has an energy equal to the energy difference between these two levels, or

K _a] = 59.3 keV. Likewise, a transition from the M-shell to the K-shell is denoted as

Κβ _] = 67.2 keV. Splittings can occur in the various levels, giving rise to slight variations in energy, e.g. Κ _β1 , Κβ ₂ , Κβ ₃ etc.

[0019] Because these discrete emission lines depend on the atomic structure of the target material, the emission is generally called "characteristic lines", since they are a characteristic of the particular material. The sharp lines 988 in the example of an x-ray emission spectrum shown in FIG. 4 are "characteristic lines" for tungsten. Individual characteristic lines can be quite bright, and may be monochromatized with an appropriate filter or crystal monochromator where a monochromatic source is desired. The relative x-ray intensity (flux) ratio of the characteristic line(s) to the bremsstrahlung radiation depends on the element and the incident electron energy, and can vary substantially. In general, a maximum ratio for a given target material is obtained when the incident electron energy is

3 to 5 times the ionization energy of the inner shell electrons.

[0020] Returning to FIG. 3, these characteristic x-rays 388 are primarily generated in a fraction of the electron penetration depth, shown as the second largest shaded portion 248 of the interaction volume 200. The relative depth is influenced in part by the energy of the electrons 1 11, which typically falls off with increasing depth. If the electron energy does not exceed the binding energy for electrons within the target, no characteristic x-rays will be emitted at all. The greatest emission of characteristic lines may occur under bombardment with electrons having three to five times the energy of the emitted characteristic x-ray photons. Because these characteristic x-rays result from atomic emission between electron shells, the emission will generally be entirely isotropic. The actual dimensions of this interaction volume 200 may vary, depending on the energy and angle of incidence of the electrons, the surface topography and other properties (including local charge density), and the density and atomic composition of the target material.

[0021] For some applications, broad-spectrum x-rays may be appropriate. For other applications, a monochromatic source may be desired or even necessary for the sensitivity or resolution required. In general, the composition of the target material is selected to provide x-ray spectra with ideal characteristics for a specific application, such as strong characteristic lines at particular wavelengths of interest, or bremsstrahlung radiation over a desired bandwidth.

[0022] Control of the x-ray emission properties of a source may be governed by the selection of an electron energy (typically changed by varying the accelerating voltage), x-ray target material selection, and by the geometry of x-ray collection from the target.

[0023] Although the x-rays may be emitted isotropically, as was illustrated in

FIG. 3, only the x-ray emission 888 within a small solid angle in the direction of window 440 in the source, as shown in FIG. 5, will be collected. The x-ray brightness, (also called "brilliance" by some), defined as the number of x-ray photons per second per solid angle in mrad ² per area of the x-ray source in mm ² (some measures may also include a bandwidth window of 0.1 % in the definition), is an important figure-of-merit for a source, as it relates to obtaining good signal-to- noise ratios for downstream applications.

[0024] The brightness can be increased by adjusting the geometric factors to maximize the collected x-rays. As illustrated in FIG. 5, the surface of the target 100 in a reflection x-ray source is generally mounted at an angle 0 (as was also shown in FIG. 2) and bombarded by a distributed electron beam 1 1 1. Emission through a window 440 is shown for a set of five equally spaced emission spots 408 for three target angles: 0=60° in FIG. 5 A, 0=45° in FIG. 5B, and 0=30° in FIG. 5C. For a source at a high angle Θ, for a solid angle centered at the window 440, the five spots are more spread out and brightness is reduced, while for low angle Θ, the five source spots appear to be closer together, thus emitting more x-rays into the same solid angle and resulting in an increased brightness.

[0025] In principle, it may appear that a source mounted at 0=0° would have all sources apparently overlapping, accumulating the emitted x-rays, and therefore would have the largest possible brightness. In practice, emission at 0° occurs parallel to the surface of a solid metal target for conventional sources, and since the x-rays must propagate along a long length of the target material before emission, most of the produced x-rays will be attenuated (reabsorbed) by the target material, reducing brightness. In practice, a source with take-off angle of around 6° to 15° (depending on the source configuration, target material, and electron energy) will often provide the greatest practical brightness, concentrating the apparent size of the source while reducing re-absorption within the target material and is therefore commonly used in commercial x-ray sources. [0026] The effective source area is the projected area viewed along the direction along which x-ray are collected for use, i.e. along the axis of the x-ray beam. Because of the limited electron penetration depth, the effective source area for an incident electron beam with a size comparable or larger than the electron penetration depth is dependent on the angle between the axis of the x-ray beam and the surface of the target, referred to as the "take-off angle". When the electron beam size is much larger than the electron penetration depth, the effective source area decreases with decreasing take-off angle. This effect has been used to increase x-ray source brightness. However, with an extensive flat target, there is a limit to this benefit, due to the increasing absorption of x-rays from their production points inside

the target as they propagate to the surface, which increases with a smaller take-off angle.

Typically, a compromise between improved brightness from a lower angle and reduced brightness from reabsorption is reached around a take-off angle of ~6 degrees.

[0027] Another way to increase the brightness of the x-ray source for bremsstrahlung radiation is to use a target material with a higher atomic number Z, as efficiency of x-ray production for bremsstrahlung radiation scales with increasingly higher atomic number materials. Furthermore, the x-ray emitting material should ideally have good thermal properties, such as a high melting point and high thermal conductivity, in order to allow higher electron power loading on the source to increase x-ray production. For these reasons, targets are often fabricated using tungsten, with an atomic number Z=74. Table I lists several materials that are commonly used for x-ray targets, several additional potential target materials (notably useful for specific characteristic lines of interest), and some materials that may be used as substrates for target materials. Melting points, and thermal and electrical conductivities are presented for values near 300°K (27°C). Most values are cited from the CRC Handbook of Chemistry and Physics, 90 ^th ed. [CRC Press, Boca Raton, FL, 2009]. Other values are cited from various sources found on the Internet. Note that, for some materials, such as sapphire for example, thermal conductivities an order of magnitude larger may be possible when cooled to temperatures below that of liquid nitrogen (77°K) [see, for example, Section 2.1.5, Thermal Properties, of E.R. Dobrovinskaya et al., Sapphire: Material, Manufacturing, Applications, Springer Science + Business Media, LLC (2009)] Table 1 : Various Target and Substrate Materials and Selected Properties.

[0028] Other ways to increase the brightness of the x-ray source are: increasing the electron current density, either by increasing the overall current or by focusing the electron beam to a smaller spot using, for example, electron optics; or by increasing the electron energy by increasing the accelerating voltage (which increases x-ray production per unit electron energy deposited in the target, and may excite more emission in the characteristic lines as well).

[0029] However, these improvements have a limit, in that all can increase the amount of heat generated in the interaction volume. The problem is exacerbated by having the target in a vacuum, so no air cooling from the surface by convection may occur. If too much heat is generated within the target, the target material may undergo phase changes, even as far as melting or evaporating. Because the vast majority of the energy deposited into the target by an electron beam becomes heat, thermal management techniques are an important tool for building better x-ray sources.

[0030] One prior art technology that has been developed to address this problem is the rotating anode system, illustrated in FIG. 6. In FIG. 6A, a cross-section is shown for a rotating anode x-ray source 580 comprising a target anode 500 that typically rotates between 3,300 and 10,000 rpm. The target anode 500 is connected by a shaft 530 to a rotor 520 supported by conducting bearings 524 that connect, through its mount 522, to the lead 22 and the positive terminal of the high voltage supply 10. The rotation of the rotor 520, shaft 530 and anode 500, all within the vacuum chamber 20, is typically driven inductively by stator windings 525 mounted outside the vacuum.

[0031] The surface of the target anode 500 is shown in more detail in FIG. 6B. The edge 510 of the rotating target anode 500 is sometimes beveled at an angle, and the source of the electron beam 51 1 is in a position to direct the electron beam onto the beveled edge 510 of the target anode 500, generating x-rays 888 from a target spot 501. As the target spot 501 generates x-rays, it heats up, but as the target anode 500 rotates, the heated spot moves away from the target spot 501, and the electron beam 51 1 now irradiates a cooler portion of the target anode 500. The hot spot has the time of one rotation to cool before becoming heated again when it passes through the hot spot 501. By continuously rotating the target anode 500, x-rays are generated from a fixed single spot, while the total area of the target illuminated by the electron beam is substantially larger than the electron beam spot, effectively spreading the electron energy deposition over a larger area (and volume). [0032] Another approach to mitigating heat is to use a target with a thin layer of target x-ray material deposited onto a substrate with high heat conduction. Because the interaction volume is thin, for electrons with energies up to 100 keV the target material itself need not be thicker than a few microns, and can be deposited onto a substrate, such as diamond, sapphire or graphite that conducts the heat away quickly. However, as noted in Table I, diamond is a very poor electrical conductor, so the design of any anode fabricated on a diamond substrate must still provide an electrical connection between the target material of the anode and the positive terminal of the high voltage. [Diamond mounted anodes for x-ray sources have been described by, for example, K. Upadhya et al. US Patent 4,972,449;

B. Spitsyn et. al. US Patent 5,148,462; and M. Fryda et al., US Patent 6,850,598].

[0033] The substrate may also comprise channels for a coolant, for example liquids such as water or ethylene glycol, or a gas such as hydrogen or helium, that remove heat from the substrate [see, for example, Paul E. Larson, US Patent 5,602,899] Water-cooled anodes are used for a variety of x-ray sources, including rotating anode x-ray sources.

[0034] The substrate may in turn be mounted to a heat sink comprising copper or some other material chosen for its thermally conducting properties. The heat sink may also comprise channels for a coolant, to transport the heat away [See, for example, Edward J. Morton, US Patent 8,094,784]. In some cases, thermoelectric coolers or cryogenic systems have been used to provide further cooling to an x-ray target mounted onto a heat sink, again, all with the goal of achieving higher x-ray brightness without melting or damaging the target material through excessive heating.

[0035] Another approach to mitigating heat for micro focus sources is to use a target created by a jet of liquid metal. Electrons bombard a conducting jet of liquid gallium (Z=31), and because the heated gallium flows away from the electron irradiation volume with the jet, higher current densities are possible. [See, for example, M. Otendal, et al., "A 9 keV electron-impact liquid-gallium-jet x-ray source", Rev. Sci. Instrum., vol. 79, 016102, (2008)].

[0036] Although effective in certain circumstances, there is still room for improvement in these sources. Jets of liquid metal require an elaborate plumbing system and consumables, are limited in the materials (and thus values of Z and their associated spectra) that may be used, and are difficult to scale to larger output powers. In the case of thin film targets of uniform solid material coated onto diamond substrates, there is still a limitation in the amount of heat that can be tolerated before damage to the film may occur, even if used in a rotating anode configuration. Conduction of heat only occurs through the bottom of the film. In a lateral dimension, the same conduction problem exists as exists in the bulk material.

[0037] There is therefore a need for an x-ray source that may be used to achieve higher x-ray brightness through the use of a higher electron current density, but that is still compact enough to fit in a laboratory or table-top environment, or even be useful in portable devices. Such brighter sources would enable x-ray based tools that offer better signal to noise ratios for imaging and other scientific and diagnostic applications.

BRIEF SUMMARY

[0038] This disclosure presents novel x-ray sources that have the potential of being up to several orders of magnitude brighter than existing commercial x-ray technologies. The higher brightness is achieved in part through the use of novel configurations for x-ray targets used in generating x-rays from electron beam bombardment. The x-ray target configurations may comprise a number of microstructures of one or more selected x-ray generating materials fabricated in close thermal contact with (such as embedded in or buried in) a substrate with high thermal conductivity, such that the heat is more efficiently drawn out of the x-ray generating material. This in turn allows bombardment of the x-ray generating material with higher electron density and/or higher energy electrons, which leads to greater x-ray brightness.

[0039] A significant advantage to some embodiments is that the orientation of the microstructures allows the use of an on-axis collection angle, allowing the accumulation of x-rays from several microstructures to be aligned to appear to originate at a single origin, and can be used for alignments at "zero-angle" x-ray emission. The linear accumulation of

x-rays from the multiple origins leads to greater x-ray brightness.

[0040] Some embodiments of the invention additionally comprise x-ray optical elements that collect the x-rays emitted from one structure and re-focus them to overlap with the x-rays from a second structure. This relaying of x-rays can also lead to greater x-ray brightness.

[0041] Some embodiments of the invention comprise an additional cooling system to transport the away from the anode or anodes. Some embodiments of the invention additionally comprise rotating the anode or anodes comprising targets with microstmctured patterns in order to further dissipate heat and increase the accumulated x-ray brightness.

BRIEF DESCRIPTION OF THE DRAWINGS

[0042] FIG. 1 illustrates a schematic cross-section diagram of a standard prior art transmission x-ray source.

[0043] FIG. 2 illustrates a schematic cross-section diagram of a standard prior art reflection x-ray source.

[0044] FIG. 3 illustrates a cross-section diagram the interaction of electrons with a surface of a material in a prior art x-ray source.

[0045] FIG. 4 illustrates the typical emission spectrum for a tungsten target.

[0046] FIG. 5 A illustrates emission from a prior art target for a target at a tilt angle

of 60 degrees.

[0047] FIG. 5B illustrates emission from a prior art target for a target at a tilt angle

of 45 degrees.

[0048] FIG. 5C illustrates emission from a prior art target for a target at a tilt angle

of 30 degrees.

[0049] FIG. 6A illustrates a schematic cross-section view of a prior art rotating anode

x-ray source.

[0050] FIG. 6B illustrates a top view of the anode for the rotating anode system of

FIG. 6A.

[0051] FIG. 7 illustrates a schematic cross-section view of an embodiment of an x-ray system according to the invention.

[0052] FIG. 8 illustrates a perspective view of a target comprising a grid of embedded

rectangular target microstructures on a larger substrate that may be used in some embodiments of the invention.

[0053] FIG. 9 illustrates a perspective view of a variation of a target comprising a grid of embedded rectangular target microstructures on a larger substrate for use with focused electron beam that may be used in some embodiments of the invention. [0054] FIG. 10 illustrates a perspective view of a variation of a target comprising a grid of embedded rectangular target microstructures on a truncated substrate as may be used in some embodiments of the invention.

[0055] FIG. 1 1 illustrates a perspective view of a variation of a target comprising a grid of embedded rectangular target microstructures on a substrate with a recessed shelf that may be used in some embodiments of the invention.

[0056] FIG. 12 illustrates a cross-section view of electrons entering a target comprising target microstructures on a larger substrate that may be used in some embodiments of the invention.

[0057] FIG. 13 illustrates a cross-section view of some of the x-rays emitted by the target of

FIG. 12.

[0058] FIG. 14 illustrates a perspective view of a target comprising a single rectangular microstructure arranged on a substrate with a recessed region that may be used in some embodiments of the invention.

[0059] FIG. 15 illustrates a perspective view of a target comprising a multiple rectangular microstructure arranged in a line on a substrate with a recessed region that may be used in some embodiments of the invention.

[0060] FIG. 16A illustrates a perspective view of a target comprising a grid of embedded rectangular target microstructures that may be used in some embodiments of the invention..

[0061] FIG. 16B illustrates a top view of the target of FIG. 16A.

[0062] FIG. 16C illustrates a side/cross-section view of the target of FIGs. 16A and 16B.

[0063] FIG. 17 illustrates a cross-section view of the target of FIG. 16, showing thermal transfer to a thermally conducting substrate under electron beam exposure.

[0064] FIG. 18A illustrates a perspective view of a target comprising a checkerboard

configuration of embedded target microstructures that may be used in some embodiments of the invention.

[0065] FIG. 18B illustrates a top view of the target of FIG. 18 A.

[0066] FIG. 18C illustrates a side/cross-section view of the target of FIGs. 18A and 18B. [0067] FIG. 19A illustrates a perspective view of a target comprising a grid of embedded rectangular target microstructures arranged on a tiered substrate that may be used in some embodiments of the invention.

[0068] FIG. 19B illustrates a top view of the target of FIG. 19A.

[0069] FIG. 19C illustrates a side/cross-section view of the target of FIGs. 19A and 19B.

[0070] FIG. 20 illustrates a cross-section view of the target of FIG. 19 radiating x-rays under electron bombardment.

[0071] FIG. 21 illustrates a collection of x-ray emitters arranged in a linear array as may be used in some embodiments of the invention.

[0072] FIG. 22 illustrates the 1/e attenuation length for several materials for x-rays having energies ranging from 1 keV to 400 keV.

[0073] FIG. 23A illustrates a linear array of x-ray emitters being exposed to normal incidence electron beams as may be used in some embodiments of the invention.

[0074] FIG. 23B illustrates a linear array of x-ray emitters being exposed to electron beams incident at an angle Θ as may be used in some embodiments of the invention.

[0075] FIG. 23 C illustrates a linear array of x-ray emitters being exposed to a focused electron beam as may be used in some embodiments of the invention.

[0076] FIG. 23D illustrates a linear array of x-ray emitters being exposed to electron beams incident at an angle 0 from multiple directions as may be used in some embodiments of the invention.

[0077] FIG. 23E illustrates a linear array of x-ray emitters being exposed electron beams of various electron densities as may be used in some embodiments of the invention.

[0078] FIG. 23 F illustrates a linear array of x-ray emitters being exposed to a uniform electron beam as may be used in some embodiments of the invention.

[0079] FIG. 24 illustrates a schematic cross-section view of an embodiment of an x-ray system according to the invention comprising multiple electron emitters.

[0080] FIG. 25 illustrates a collection of non-uniform x-ray emitters being exposed to electron beams of different electron densities as may be used in some embodiments of the invention.

[0081] FIG. 26A illustrates a plot of the attenuation length and the CSDA (continuous slowing down approximation of electrons) for tungsten over a range of x-ray energies. [0082] FIG. 26B illustrates a plot of the ratio of attenuation length and CSDA for tungsten over a range of x-ray energies.

[0083] FIG. 27 illustrates a plot of the ratio of attenuation length and CSDA for several

materials over a range of x-ray energies.

[0084] FIG. 28A illustrates a collection of x-ray emitters arranged in a linear array in a time multiplexed electron beam exposure at time step t=0, as may be used in some embodiments of the invention.

[0085] FIG. 28B illustrates the collection of x-ray emitters of FIG. 28A at the next time step t=l .

[0086] FIG. 28C illustrates the collection of x-ray emitters; FIG. 28A at t=0, FIG. 28B at the next step t=l , and 28C at the next time step t=2.

[0087] FIG. 29A illustrates off-axis emission of x-rays from a collection of x-ray emitters arranged in a linear array as may be used in some embodiments of the invention.

[0088] FIG. 29B illustrates off-axis emission of x-rays from a collection of x-ray emitters arranged in a widely spaced linear array as may be used in some embodiments of the invention.

[0089] FIG. 30 illustrates a schematic cross-section view of an embodiment of an

x-ray system according to the invention comprising multiple electron emitters and a cooling system.

[0090] FIG. 31 illustrates a cross-section of the target of the x-ray system of FIG. 30.

[0091] FIG. 32 illustrates a schematic cross-section view of an embodiment of an

x-ray system according to the invention comprising a two-sided target.

[0092] FIG. 33 illustrates a cross-section of the target of the x-ray system of FIG. 32.

[0093] FIG. 34 illustrates a schematic cross-section view of an x-ray system according to an embodiment of the invention comprising multiple electron emitters bombarding opposite sides of a rotating anode.

[0094] FIG. 35 illustrates a cross-section of multiple targets aligned for linear accumulation for use in a system according to the invention.

[0095] FIG. 36 illustrates a cross-section of multiple targets comprising microstructures of x- ray generating material aligned for linear accumulation for use in a system according to the invention. [0096] FIG. 37A illustrates a side view of a target comprising an x-ray coating being bombarded using a distributed electron beam as may be used in some embodiments of the invention.

|0097] FIG. 37B illustrates a perspective view of the target and distributed electron beam of

FIG. 37A.

[0098] FIG. 37C illustrates a front view of the target and distributed electron beam of FIG.

37A.

[0099] FIG. 38A illustrates a side view of a target comprising microstructures being

bombarded using a distributed electron beam as may be used in some embodiments of the invention.

[0100] FIG. 38B illustrates a perspective view of the target and distributed electron beam of

FIG. 38A.

[0101] FIG. 38C illustrates a front view of the target and distributed electron beam of FIG.

38 A.

[0102] FIG. 39 illustrates a cross-section of multiple targets comprising microstructures of x- ray generating material in which reflecting optics are used to collect and focus x-rays for use in a system according to the invention.

[0103] FIG. 40 illustrates a cross-section of multiple targets comprising microstructures of x- ray generating material of various orientations in which reflecting optics are used to collect and focus x-rays for use in a system according to the invention. Figure 41 illustrates a cross-section of multiple targets comprising microstructures of x-ray generating materials, in which an additional window and detector are used to monitor X-rays in the opposite direction of transmission

[0104] FIG. 42 illustrates a cross-section of multiple targets comprising microstructures of x- ray generating material in which Wolter optics are used to collect and focus x-rays for use in a system according to the invention.

[0105] FIG. 43 A illustrates a prior art embodiment of Wolter optics used for x-rays.

[0106] FIG. 43B illustrates a prior art embodiment of Wolter optics with multiple cylindrical optical elements. [0107] FIG. 44 illustrates a cross-section of multiple targets comprising microstructures of x- ray generating material in which capillary optics are used to collect and focus x-rays for use in a system according to the invention.

DETAILED DESCRIPTIONS OF EMBODIMENTS OF THE INVENTION

1. A Basic Embodiment of the Invention.

[0108] FIG. 7 illustrates an embodiment of a reflective x-ray system 80-A according to the invention. As in the prior art reflective x-ray system 80 described above, the source comprises a vacuum environment (typically 10 ^"6 torr or better) commonly maintained by a sealed vacuum chamber 20 or active pumping, and manufactured with sealed electrical leads 21 and 22 that pass from the negative and positive terminals of a high voltage source 10 outside the tube to the various elements inside the vacuum chamber 20. The source 80-A will typically comprise mounts 30 which secure the vacuum chamber 20 in a housing 50, and the housing 50 may additionally comprise shielding material, such as lead, to prevent x-rays from being radiated by the source 80-A in unwanted directions.

[0109] As before, inside the chamber 20, an emitter 11 connected through the lead 21 to the high voltage source 10 serves as a cathode and generates a beam of electrons 111, often by running a current through a filament. Any number of prior art techniques for electron beam generation may be used for the embodiments of the invention disclosed herein. Additional known techniques used for electron beam generation include heating for thermionic emission, Schottky emission (a combination of heating and field emission), emitters comprising nanostructures such as carbon nanotubes), and by use of ferroelectric materials. [For more on electron emission options for electron beam generation, see Shigehiko Yamamoto, "Fundamental physics of vacuum electron sources", Reports on Progress in Physics vol. 69, pp. 181-232 (2006); Alireza Nojeh, "Carbon Nanotube Electron Sources: From Electron Beams to Energy Conversion and Optophononics", ISRN Nanomaterials vol. 2014, Art. ID 879827, 23 pages (2014); and H. Riege, "Electron Emission from Ferroelectrics - A Review", CERN Report CERN AT/93-18, Geneva Switzerland, July 1993.]

[0110] As before, a target 1 100 comprising a target substrate 1000 and regions 700 of x-ray generating material is electrically connected to the opposite high voltage lead 22 and target support 32 to be at low voltage, thus serving as an anode. The electrons 111 accelerate towards the target 1 100 and collide with it at high energy, with the energy of the electrons determined by the magnitude of the accelerating voltage. The collision of the electrons 11 1 into the target 1 100 induces several effects, including the emission of x-rays, some of which exit the vacuum tube 20 and are transmitted through a window 40 that is transparent to

x-rays.

[0111] However, in some embodiments of the invention, there may also be an electron control mechanism 70 such as an electrostatic lens system or other system of electron optics that is controlled and coordinated with the electron dose and voltage provided by the emitter 1 1 by a controller 10-1 through a lead 27. The electron beam 1 11 may therefore be scanned, focused, de- focused, or otherwise directed onto a target 1 100 comprising one or more microstructures 700 fabricated to be in close thermal contact with a substrate 1000.

[0112] As illustrated in FIG. 7, the alignment of the microstructures 700 may be arranged such that the bombardment of several of the microstructures 700 by the electron beam or beams 1 1 1 will excite emission in a direction orthogonal to the surface normal of the target in such a manner that the intensity in the direction of view will add or accumulate. The direction may also be selected by means of an aperture 840 in a screen 84 for the system to form the directional beam 888 that exits the system through a window 40. In some embodiments, the aperture 840 may be positioned outside the vacuum chamber, or, more commonly, the window 40 itself may serve as the aperture. In some embodiments, the aperture may be inside the vacuum chamber.

[0113] Targets such as those to be used in x-ray sources according to the invention disclosed herein have been described in detail in the co-pending US Patent Application entitled STRUCTURED TARGETS FOR X-RAY GENERATION (US Patent Application 14/465,816, filed Aug. 21 , 2014), which is hereby incorporated by reference in its entirety and included as Appendix A. Any of the target designs and configurations disclosed in the above referenced copending Application may be considered for use as a component in any or all of the x-ray sources disclosed herein.

[0114] FIG. 8 illustrates a target as may be used in some embodiments of the invention. In this figure, a substrate 1000 has a region 1001 that comprises an array of microstructures 700 comprising x-ray generating material (typically a metallic material) that are arranged in a regular array of right rectangular prisms. In a vacuum, electrons 1 11 bombard the target from above, and generate heat and x-rays in the microstructures 700. The material in the substrate 1000 is selected such that it has relatively low energy deposition rate for electrons in comparison to the x-ray generating micro structure material (typically by selecting a low Z material for the substrate), and therefore will not generate a significant amounts of heat and x- rays. The substrate 1000 material may also be chosen to have a high thermal conductivity, typically larger than 100 W/(m °C), and the microstructures are typically embedded within the substrate, i.e. if the microstructures are shaped as rectangular prisms, it is preferred that at least five of the six sides are in close thermal contact with the substrate 1000, so that heat generated in the microstructures 700 is effectively conducted away into the substrate 1000. However, targets used in other embodiments may have fewer direct contact surfaces. In general, when the term "embedded" is used in this disclosure, at least half of the surface area of the

microstructure will be in close thermal contact with the substrate.

[0115] A target 1 100 according to the invention may be inserted as a replacement for the target 01 for the transmission x-ray source 08 illustrated in FIG. 1, or for the target 100 illustrated in the reflecting x-ray source 80 of FIG. 2, or adapted for use as the target 500 used in the rotating anode x-ray source 580 of FIG. 6.

[0116] It should be noted here that, when the word "microstructure" is used herein, it is specifically referring to microstructures comprising x-ray generating material. Other structures, such as the cavities used to form the x-ray microstructures, have dimensions of the same order of magnitude, and might also be considered "microstructures". As used herein, however, other words, such as "structures", "cavities", "holes", "apertures", etc. may be used for these structures when they are formed in materials, such as the substrate, that are not selected for their x-ray generating properties. The word "microstructure" will be reserved for structures comprising materials selected for their x-ray generating properties.

[0117] Likewise, it should be noted that, although the word "microstructure" is used, x-ray generating structures with dimensions smaller than 1 micron, or even as small as nano- scale dimensions (i.e. greater than 10 nm) may also be described by the word "microstructures" as used herein.

[0118] FIG. 9 illustrates another target as may be used in some embodiments of the invention in which the electron beam 1 1 1 -F is directed by electrostatic lenses to form a more concentrated, focused spot. For this situation, the target 1 100-F will still comprise a region 1001 - F comprising an array of microstructures 700-F comprising x-ray material, but the size and dimensions of this region 1001-F can be matched to regions where electron exposure will occur. In these targets, the "tuning" of the source geometry and the x-ray generating material can be controlled such that the designs mostly limit the amount of heat generated to the microstructured region 1001-F, while also reducing the design and manufacturing complexity. This may be especially useful when used with electron beams focused to form a micro-spot, or by more intricate systems that form a more complex electron exposure pattern.

[0119] FIG. 10 illustrates another target as may be used in some embodiments of the invention, in which the target 1100-E still has a region 1001-E with an array of microstructures 700-E comprising x-ray material that emit x-rays when exposed to electrons 111 , but the region 1001-E is positioned flush with or near the edge of the substrate 1000-E. This configuration may be useful in targets where the substrate comprises a material that absorbs x-rays, and so emission at near-zero angles would be significantly attenuated in a configuration, as was shown in FIG. 8.

[0120] A disadvantage of the target of FIG. 10, however, as compared to

FIG. 8 is that a significant portion of the substrate on one side of the microstructures 700-E is gone. Heat therefore is not carried away from the microstructures symmetrically, and the local heating may increase, impairing heat flow.

[0121] To address this, some targets as may be used in some embodiments of the invention may use a configuration like that shown in FIG. 1 1. Here, the target 1100-R comprises a substrate 1000-R with a recessed shelf 1002-R. This allows the region 1001-R comprising an array of microstructures 700-R to be positioned flush with, or close to, a recessed edge 1003-R of the substrate, and emit x-rays at or near zero angle without being reabsorbed by the substrate 1000-R, yet provides a more symmetric heat sink for the heat generated when exposed to electrons 1 1 1.

[0122] FIG. 12 illustrates the relative interaction between a beam of electrons 11 1 and a target comprising a substrate 1000 and microstructures 700 of x-ray material. As illustrated, only three electron paths are shown, with two representative of electrons bombarding the two shown microstructures 700, and one interacting with the substrate.

[0123] As discussed in Eqn. 1 above, the depth of penetration can be estimated by Pott's Law. Using this formula, Table II illustrates some of the estimated penetration depths for some common x-ray target materials. Table II: Estimates of penetration depth for 60 keV electrons into some materials.

[0124] For the illustration in FIG. 12, if 60 keV electrons are used, and diamond (Z=6) is selected as the material for the substrate 1000 and copper (Z=29) is selected as the x-ray generating material for the microstructures 700, the dimension marked as R to the left side of FIG. 12 corresponds to a reference dimension of 10 microns, and the depth D in the x-ray generating material, which, when set to be 2/3 (66%) of the electron penetration depth for copper, becomes D ~ 3.5 μηι.

[0125] The majority of characteristic Cu K x-rays are generated within depth D. The electron interactions below that depth typically generate few characteristic K-line x-rays but will contribute to the heat generation, thus resulting in a low thermal gradient along the depth direction. It is therefore preferable in some embodiments to set a maximum thickness for the microstructures in the target in order to limit electron interaction in the material and optimize local thermal gradients. One embodiment of the invention limits the depth of the microstructured x-ray generating material in the target to between one third and two thirds of the electron penetration depth at the incident electron energy. In this case, the lower mass density of the substrate leads to a lower energy deposition rate in the substrate material immediately below the x-ray generating material, which in turn leads to a lower temperature in the substrate material below. This results in a higher thermal gradient between the x-ray generating material and the substrate, enhancing heat transfer. The thermal gradient is further enhanced by the high thermal conductivity of the substrate material.

[0126] For similar reasons, selecting the depth D to be less than the electron penetration depth is also generally preferred for efficient generation of bremsstrahlung radiation, because the electrons below that depth have lower energy and thus lower x-ray production efficiency.

[0127] Note: Other choices for the dimensions of the x-ray generating material may also be used. In targets as used in some embodiments of the invention, the depth of the x-ray material may be selected to be 50% of the electron penetration depth. In other embodiments, the depth of the x-ray material may be selected to be 33% of the electron penetration depth. In other embodiments, the depth D for the microstructures may be selected related to the "continuous slowing down approximation" (CSDA) range for electrons in the material. Other depths may be specified depending on the x-ray spectrum desired and the properties of the selected x-ray material.

[0128] Note: In other targets as may be used in some embodiments of the invention, a particular ratio between the depth and the lateral dimensions (such as width W and

length L) of the x-ray generating material may also be specified. For example, if the depth is selected to be a particular dimension D, then the lateral dimensions W and/or L may be selected to be no more than 5x , giving a maximum ratio of 5. In other targets as may be used in some embodiments of the invention, the lateral dimensions W and/or L may be selected to be no more than 2xD. It should also be noted that the depth D and lateral dimensions ^and L (for width and length of the x-ray generating microstructure) may be defined relative to the axis of electron propagation, or defined with respect to the orientation of the surface of the x-ray generating material. For normal incidence electrons, these will be the same dimensions. For electrons incident at an angle, care must be taken to make sure the appropriate projections are used.

[0129] FIG. 13 illustrates the relative x-ray generation from the various regions shown in FIG. 12. X-rays 888 comprise characteristic x-rays emitted from the region 248 where they are generated in the x-ray generating material, while the regions 1280 and 1080 where the electrons interact with the substrate generate characteristic x-rays of the substrate element(s), (but not characteristic x-rays of the element(s) of the x-ray generating material in the x-ray generating region 248). Additionally, bremsstrahlung radiation x-rays emitted from the region 248 of the x- ray generating material are typically much stronger than in the regions 1280 and 1080 where electrons encounter only the low Z substrate, which emit weak continuum x-rays 1088 and 1228. [0130] It should be noted that, although the illustration of FIG. 13 shows x-rays emitted only to the right, this is in anticipation of a window or collector being placed to the right, when this target is used in the low-angle high-brightness configuration discussed in FIG. 5. X-rays are in fact typically emitted in all directions from these regions.

[0131] It should also be noted that materials are relatively transparent to their own characteristic x-rays, so that FIG. 13 illustrates an arrangement that allows the linear

accumulation of characteristic x-rays along the microstructures and therefore can produce a relatively strong characteristic x-ray signal. However, many lower energy x-rays will be attenuated by the target materials, which will effectively act as an x-ray filter. Other selections of materials and geometric parameters may be chosen (e.g. a non-linear scheme) if non- characteristic, continuum x-rays are desired, such as applications in which a bandpass of low energy x-rays are desired (e.g. for imaging or fluorescence analysis of low Z materials).

[0132] Up to this point, targets that are arranged in planar configurations have been presented. These are generally easier to implement, since equipment and process recipes for deposition, etching and other planar processing steps are well known from processing devices for microelectromechanical systems (MEMS) applications using planar diamond, and from processing silicon wafers for the semiconductor industry.

[0133] However, in some embodiments, a target with a surface with additional properties in three dimensions (3-D) may be desired. As discussed previously, when the electron beam is larger than the electron penetration depth, the apparent x-ray source size and area is at minimum (and brightness maximized) when viewed parallel to surface, i.e. at a zero degree (0°) take-off angle. As a consequence, the apparent brightest of x-ray emission occurs when viewed at 0° take-off angle. The emission from within the x-ray generating material will accumulate as it propagates at 0° through the material.

[0134] However, with an extended target of substantially uniform material, the attenuation of x-rays between their points of origin inside the target as they propagate through the material to the surface increases with decreasing take-off angle, due to the longer distance traveled within the material, and often becomes largest at or near 0° take-off angle. Reabsorption may therefore counterbalance any increased brightness that viewing at near 0° achieves. The distance through which an x-ray beam will be reduced in intensity by 1/e is called the x-ray attenuation length, and therefore, a configuration in which the emitted x-rays pass through as little additional material as possible, with the distance selected to be related to the x-ray attenuation length, may be desired.

[0135] An illustration of a target as may be used in some embodiments of the invention is presented in FIG. 14. In FIG. 14, an x-ray generating region comprising a single

microstructure 2700 is configured at or near a recessed edge 2003 of the substrate on a shelf 2002, similar to the situation illustrated in FIG. 1 1. The x-ray generating microstructure 2700 is in the shape of a rectangular bar of x-ray generating material, is embedded in a substrate 2000, and emits x-rays 2888 when bombarded with electrons 111.

[0136] The thickness of the bar D (along the surface normal of the target) is selected to be between one third and two thirds of the electron penetration depth of the x-ray generating material at the incident electron energy for optimal thermal performance. It may also be selected to obtain a desired x-ray source size in the vertical direction. The width of the bar f^is selected to obtain a desired source size in the corresponding direction. As illustrated, W~ 1.5D, but could be substantially smaller or larger, depending on the size of the source spot desired.

[0137] The length of the bar L as illustrated is L ~ 4D , but may be any dimension, and may typically be determined to be between ¼ to 3 times the x-ray attenuation length for the selected x-ray generating material. The distance between the edge of the shelf and the edge of the x-ray generating material p as illustrated is p ~ W, but may be selected to be any value, from flush with the edge 2003 (p=0) to as much as 1 mm, depending on the x-ray reabsorption properties of the substrate material, the relative thermal properties, and the amount of heat expected to be generated when bombarded with electrons.

[0138] An illustration of an alternative target as may be used in some embodiments of the invention is presented in FIG. 15. In this target, an x-ray generating region with six microstructures 2701, 2702, 2703, 2704, 2705, 2706 is configured at or near a recessed edge 2003 of the substrate on a shelf 2002, similar to the situation illustrated in FIG. 1 1 and FIG. 14. The x-ray generating microstructures 2701, 2702, 2703, 2704, 2705, 2706 are arranged in a linear array of x-ray generating right rectangular prisms embedded in a substrate 2000, and emit x-rays 2888-D when bombarded with electrons 1 11.

[0139] In this target as may be used in some embodiments of the invention, the total volume of x-ray generating material is the same as in the previous illustration of FIG. 14. The thickness of the bar D (along the surface normal of the target) is selected to be between one third and two thirds of the electron penetration depth of the x-ray generating material at the incident electron energy for optimal thermal performance, as in the case shown in FIG. 14. The width of the bar W is selected to obtain a desired source size in the corresponding direction and as illustrated, W~ 1.5 D, as in the case shown in FIG. 14. As discussed previously, it could also be substantially smaller or larger, depending on the size of the source spot desired.

[0140] However, the single bar 2700 of length L as illustrated in FIG. 14 has been replaced with 6 sub-bars 2701, 2702, 2703, 2704, 2705, 2706 each of length 1 =1/6. Although the volume of x-ray generation (when bombarded with the same electron density) will be the same, each sub-bar now has five faces transferring heat into the substrate, increasing the heat transfer away from the x-ray generating sub-bars 2701-2706 and into the substrate. As illustrated, the separation between the sub-bars is a distance d ~ 1, although larger or smaller dimensions may also be used, depending on the amount of x-rays absorbed by the substrate and the relative thermal gradients that may be achieved between the specific materials of the x-ray generating microstructures 2701-2706 and the substrate 2000.

[0141] Likewise, the distance between the edge of the shelf and the edge of the x-ray generating material p as illustrated is p ~ W, but may be selected to be any value, from flush with the edge 2003 (p=0) to as much as 1 mm, depending on the x-ray reabsorption properties of the substrate material, the relative thermal properties, and the amount of heat expected to be generated when bombarded with electrons.

[0142] For a configuration such as shown in FIG. 15, the total length of the x-ray generating sub-bars will commonly be about twice the linear attenuation length for x-rays in the x-ray generating material, but can be selected from half to more than 3 times that distance.

Likewise, the thickness of the bar (along the surface normal of the target) D was selected to be equal to one third to two thirds of the electron penetration depth of the x-ray generating material at the incident electron energy for optimal thermal performance, but it can be substantially larger. It may also be selected to obtain a desired x-ray source size in that direction which is

approximately equal.

[0143] The bars as shown may be embedded in the substrate (as shown), but if the thermal load generated in the x-ray generating material is not too large, they may also be placed on top of the substrate. [0144] FIG. 16 illustrates a region 1001 of a target as may be used in some embodiments of the invention that comprises an array of microstructures 700 in the form of right rectangular prisms comprising x-ray generating material arranged in a regular array. FIG. 16A presents a perspective view of the sixteen microstructures 700 for this target, while FIG. 16B illustrates a top down view of the same region, and FIG. 16C presents a side/cross-section view of the same region. (For the term "side/cross-section view" in this disclosure, the view meant is one as if a cross-section of the object had been made, and then viewed from the side towards the cross-sectioned surface. This shows both detail at the point of the cross-section as well as material deeper inside that might be seen from the side, assuming the substrate itself were transparent [which, in the case of diamond, is generally true for visible light].)

[0145] In these targets, the microstructures have been fabricated such that they are in close thermal contact on five of six sides with the substrate. As illustrated, the top of the microstructures 700 are flush with the surface of the substrate, but other targets in which the microstructure is recessed may be fabricated, and still other targets in which the microstructures present a topographical "bump" relative to the surface of the substrate may also be fabricated.

[0146] An alternative target as may be used in some embodiments of the invention may have several microstructures of right rectangular prisms simply deposited upon the surface of the substrate. In this case, only the bottom base of the prism would be in thermal contact with the substrate. For a structure comprising the microstructures embedded in the substrate with a side/cross-section view as shown in FIG. 16C with depth D and lateral dimensions in the plane of the substrate of W and L, the ratio of the total surface area in contact with the substrate for the embedded microstructures vs. deposited microstructures is

^AEmbeMed = 1 + 2D ^{(W + L)} [Eqn. 2]

A _Deposiled (W x L)

With a small value for D relative to W and L, the ratio is essentially 1. For larger thicknesses, the ratio becomes larger, and for a cube {D=W=L) in which 5 equal sides are in thermal contact, the ratio is 5. If a cap layer of a material with similar properties as the substrate in terms of mass density and thermal conductivity is used, the ratio may be increased to 6.

[0147] The heat transfer is illustrated with representative arrows in FIG. 17, in which the heat generated in microstructures 700 embedded in a substrate 1000 is conducted out of the microstructures 700 through the bottom and sides (arrows for transfer through the sides out of the plane of the drawing are not shown). The amount of heat transferred per unit time (AQ) conducted through a material of area A and thickness d given by:

κ· A- AT

[Eqn. 3]

d

where κ is the thermal conductivity in W/(m °C) and AT is the temperature difference across thickness d in °C. Therefore, an increase in surface area A, a decrease in thickness d and an increase in AT all lead to a proportional increase in heat transfer.

[0148] FIG. 18 illustrates a region 1013 of a target according to an embodiment of invention that comprises a checkerboard array of microstructures 700 and 701 in the form of right rectangular prisms comprising x-ray generating material. The array as shown is arranged as an embedded array in the surface of the substrate. FIG. 18A presents a perspective view of the twenty- five embedded microstructures 700 and 701, while FIG. 18B illustrates a top down view of the same region, and FIG. 18C presents a side/cross-section view of the same region with recessed regions shown with dotted lines.

[0149] An illustration of another target as may be used in some embodiments of the invention is presented in FIG. 19, which shows a region 2001 of a target according to an embodiment of invention with an array of microstructures 2790 and 2791 comprising x-ray generating material having a thickness D. The array as shown is a modified checkerboard pattern of right rectangular prisms, but other configurations and arrays of microstructures may be used as well.

[0150] As in the targets used in other embodiments, these microstructures 2790 and 2791 are embedded in the surface of the substrate. However, the surface of the substrate comprises a predetermined non-planar topography, and in this particular case, a plurality of steps along the surface normal of the substrate 2000. As illustrated, the height of each step is h ~ D, but the step height may be selected to be between lx and 3x the thickness of the microstructures. The total height of all the steps may be selected to be equal or less than the desired x-ray source size along the vertical (thickness) direction.

[0151] The total width of the microstructured region may be equal to the desired x-ray source size in the corresponding direction. The overall appearance resembles a staircase of x-ray sources. FIG. 19A presents a perspective view of the eighteen embedded microstructures 2790 and 2791 , while FIG. 19B illustrates a top down view of the same region, and FIG. 19C presents a side/cross-section view of the same region. An electrically conductive layer may be coated on the top of the staircase structures when the substrate is beryllium, diamond, sapphire, silicon, or silicon carbide.

[0152] FIG. 20 illustrates the x-ray emission 888-S from the staircase target of FIG. 19C when bombarded by electrons 1 1 1. As in the targets used in other embodiments, the prisms of x-ray generating material heat up when electrons collide with them, and because each of the prisms of x-ray generating material has five sides in thermal contact with the substrate 2000, conduction of heat away from the x-ray material is still larger than a configuration in which the x-ray material is deposited on the surface. However, to one side, the emission is of x- rays unattenuated by absorption from other neighboring prisms and negligibly attenuated by neighboring substrate material.

[0153] The brightness of x-rays from each prism will therefore be increased, especially when compared to the x-ray emission from the target of FIG. 18, which also illustrates a number of prisms 700 and 701 of x-ray generating material arranged in a checkerboard pattern. In the configuration of FIG. 18, each prism is embedded in the substrate, therefore having five surfaces in thermal contact with the substrate 1000, but the emission to the side at 0° will be attenuated by both the prisms of the neighboring columns and the substrate material.

[0154] Such an embodiment comprising a target with topography may be manufactured by first preparing a substrate with topography, and then embedding the prisms of x-ray material following the fabrication processes for the previously described planar substrates. Alternatively, the initial steps that create cavities to be filled with x-ray material may be enhanced to create the staircase topography structure in an initially flat substrate.

In either case, additional alignment steps, such as those known to those skilled in the art of planar processing, may be employed if overlay of the embedded prisms with a particular feature of topography is desired.

[0155] Microstrutures may be embedded with some distance to the edges of the staircase, as illustrated in FIGs. 19 and 20, or flush with as edge (as was shown in FIG. 10). A determination of which configuration is appropriate for a specific application may depend on the exact properties of the x-ray generation material and substrate material, so that, for example, the additional brightness achieved with increased electron current enabled by the thermal transfer through five vs. four surfaces may be compared with the additional brightness achieved with free space emission vs. reabsorption through a section of substrate material. The additional costs associated with the alignment and overlay steps, as well as the multiple processing steps that may be needed to pattern multiple prisms on multiple layers, may need to be considered in comparison to the increased brightness achievable.

[0156] Other target configurations that may be used in embodiments of the invention, as has been described in the above cited US Patent Application Ser. No. 14/465,816, are microstructures comprising multiple x-ray generating materials, microstructures comprising alloys of x-ray generating materials, microstructures deposited with an anti-diffusion layer or an adhesion layer, microstructures with a thermally conducting overcoat, microstructures with a thermally conducting and electrically conducting overcoat, microstructured buried within a substrate and the like.

[0157] Other target configurations that may be used in embodiments of the invention, as has been described in the above cited US Patent Application Ser. No. 14/465,816, are arrays of microstructures that may comprise any number of conventional

x-ray target materials (such as copper (Cu), and molybdenum (Mo) and tungsten (W)) that are patterned as features of micron scale dimensions on (or embedded in) a thermally conducting substrate, such as diamond or sapphire. In some embodiments, the microstructures may alternatively comprise unconventional x-ray target materials, such as tin (Sn), sulfur (S), titanium (Ti), antimony (Sb), etc. that have thus far been limited in their use due to poor thermal properties.

[0158] Other target configurations that may be used in embodiments of the invention, as has been described in the above cited US Patent Application Ser. No. 14/465,816, are arrays of microstructures that take any number of geometric shapes, such as cubes, rectangular blocks, regular prisms, right rectangular prisms, trapezoidal prisms, spheres, ovoids, barrel shaped objects, cylinders, triangular prisms, pyramids, tetrahedra, or other particularly designed shapes, including those with surface textures or structures that enhance surface area, to best generate x- rays of high brightness and that also efficiently disperse heat.

[0159] Other target configurations that may be used in embodiments of the invention, as has been described in the above cited US Patent Application Ser. No. 14/465,816, are arrays of microstructures comprising various materials as the x-ray generating materials, including aluminum, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, yttrium, zirconium, molybdenum, niobium, ruthenium, rhenium, rhodium, palladium, silver, tin, iridium, tantalum, tungsten, indium, cesium, barium, gold, platinum, lead and combinations and alloys thereof.

[0160] The embodiments described so far include a variety of x-ray target

configurations that comprise a plurality of microstructures comprising x-ray material that can be used as targets in x-ray sources to generate x-rays with increased brightness. These target configurations have been described as being bombarded with electrons and emitting x-rays, but may be used as the static x-ray target in an otherwise conventional source, replacing either the target 01 from the transmission x-ray source 08 of FIG. 1, or the target 100 from the reflective x- ray source 80 of FIG. 2 with a microstructured target to form an x-ray source in accord with some embodiments of the invention.

[0161] It is also possible that the targets described above may be embodied in a moving x-ray target, replacing, for example, the target 500 from the rotating anode x-ray source 80 of FIG. 6 with a microstructured target as described above to create a source with a moving microstrucutred target in accord with other embodiments of the invention.

2. Generic Considerations for a Linear Accumulation X-Ray Source.

[0162] FIG. 21 illustrates a collection of x-ray emitters arranged in a linear array. The long axis of the linear array runs from left to right in the figure, while the short axis would run in and out of the plane of the figure. Several x-ray generating elements 801 , 802, 803, 804... etc. comprising one or more x-ray generating materials are bombarded by beams electrons 1 1 1 1 , 1 1 12, 1 1 13, 1 1 14, ... etc. at high voltage (anywhere from 1 to 250 kcV), and form sub-sources that emit x-rays 818, 828, 838, 848, ... etc. Although the x-rays tend to be emitted isotropically, the analysis here is for a view along the axis down the center of the linear array of sub-sources, where a screen 84 with an aperture 840 has been positioned.

[0163] It should be noted that, as drawn in FIG. 21 , the aperture allows the accumulated zero-angle x-rays to emerge from the source, but in practice, an aperture which allows several degrees of emitted x-rays emitted at +3° or even at ±6° to the surface normal may be designed for use in some applications. It is generally preferred that the window be at normal or near normal incidence to the long axis of the linear array, but in some embodiments, a window tilted to an angle as large as 85° may be useful.

[0164] Assuming the ith emitter 80/ emits x-rays 8/8 along the axis to the right in FIG. 21 , the emission for the right-most emitter as illustrated simply propagates to the right through free space. However, the x-rays from the other emitters are attenuated through absorption, scattering, or other loss mechanisms encountered while passing through whatever material lies between emitters, and also by divergence from the propagation axis and by losses encountered by passage through the neighboring emitter(s) as well.

[0165] If we define:

I,- as the x-ray emission intensity 8/8 from the ith emitter 80/;

Tj_o as the x-ray transmission factor for propagation to the right of the

1 ^st emitter 801 ;

Ti _j .j as the x-ray transmission factor for propagation from the th emitter 80/ to the /-7-th emitter 80(7-7); and

Tj as the x-ray transmission factor for propagation through the /th emitter 80/

(With Γ ₀ ≡ 1),

the total intensity of the x-rays on-axis to the right of the array of N emitters can be expressed as:

+ I ₃ x T ₃ ,2 x T ₂ x T ₂ x T, x T,.o [Eqn 4]

+ I4 X T x T3 x Ts,2 T ₂ x TJ x Ti x Tifi

+ ...

+ I _N x TN,N-I X TN-I X _N -i _TN _2 x ... x T ₂ x T ₂ j x T/ x T _!i0

making

[0166] For a source design in which all emitters emit approximately the same intensity of x-rays

I, ~ a In [Eqn 6] (which can be achieved if the x-ray emitting elements of the array are similar sizes and shapes, and they are bombarded with electrons with similar energy and density), the total emitted intensity becomes

[0167] Furthermore, if the emitters are arranged in a regular array with essentially the same value for transmission between elements:

and if the sizes and shapes of the x-ray emitting elements are similar enough such that the transmission through any given element will also be the same:

T _a = T, , a > 0 , [Eqn 9]

then the total emitted intensity becomes

</-l)

I tot - To Ti i +∑ τ _χ ^(ί - ^]) τ ₂ [Eqn.10]

1=2

I» _t = Io Ti,o l +∑ ^ T _2l j [Eqn.l l]

[0168] Note that 7} and 7} ,. _/ represent a reduction in transmission due to losses, and therefore always have values between 0 and 1. If N is large, the sum on the right can be approximated by the geometric series

1

=∑x" for |x| < l [Eqn.13]

(1 - x)

making the approximate intensity

This suggests making the product of the transmission factors Tj and T2J as close to 1 as possible will increase Ιχοΐ· [0169] Note that this can also be used to estimate how many emitting elements can be arranged in a row before losses and attenuation would make the addition of another x-ray emitting element unproductive. For example, if the width of an emitting element is the 1 /e attenuation length for x-rays, transmission through the element gives Tj = 1/e = 0.3679.

Assuming a transmission between elements of 7} ,,/ = ¾ ⁼ 0.98, this makes hot "Io T _L0 ¹ = I ₀ Ti,o { \ .564) [Eqn 15]

(1 - (0.3679X0.98))

This suggests that a large number of elements with a width equal to the 1/e length could only improve the intensity by a factor of 1.564, implying that a large number is not more productive on-axis than 2 elements would be.

[0170] For a narrower element, with an x-ray attenuation of, for example, Tj = 0.80, hot »Io Τ,,ο ¹ = o Τ,,ο (4.630) [Eqn 16]

(1 - (0.80X0.98))

implying that up to approximately 5 of these elements may be arranged in a row to produce a source as bright as a source with a large number of x-ray generating elements.

[0171] It should be noted that the x-ray attenuation may be different for x-rays of different energies, and that the product of Tj and T ₂ may vary considerably for a given material over a range of wavelengths.

[0172] FIG. 22 illustrates the 1/e attenuation length for x-rays having energies ranging from 1 keV to 400 keV for three x-ray generating materials: Molybdenum (Mo), Copper (Cu), Tungsten (W); and from 10 keV to 400 keV for three substrate materials: Graphite (C), Beryllium (Be) and water (H ₂ 0). [The data presented here has been originally published by B.L. Henke, E.M. Gullikson, and J.C. Davis, in "X-ray interactions: photoabsorption, scattering, transmission, and reflection at E=50-30000 eV, Z=l-92", Atomic Data and Nuclear Data Tables vol. 54 (no.2), pp. 181 -342 (July 1993), and may be also accessed at

<http://henke.lbl.gov/optical_constants/atten2.html >. Other x-ray absorption tables are available at <http://physics.nist.gov/PhysRefData/XrayMassCoef/chap2.h tml >.]]

[0173] The 1/e attenuation length Lj/ _e for a material is related to the transmission factors above for a length L by

Ti = e ^a - ^L = e ^'L/L " [Eqn 17]

Therefore, a larger Lj _/e means a larger Tj . [0174] As an example using the values in FIG. 22 using 60 keV x-rays, for tungsten, Lj _le « 200 μηι, making the transmission of a 20 μηι wide x-ray generating element

. = _e - ^L lh<. = _e - ^{20 200} = 0.905 [Eqn 18]

while for a beryllium substrate, Lj _/e « 50,000 μm, making the transmission of a 100 μπι wide tungsten x-ray generating element embedded in beryllium to be:

_T . = _e - ^. = _e -ioo/50,ooo _{= 998} [Eqn 19]

Therefore, for a periodic array of tungsten elements 20 μιη wide embedded in a Beryllium substrate and spaced 100 μηι apart, the best-case estimate for the on-axis intensity is: a *Io Τ,,ο - = h r _A0 (10.312) [Eqn 20]

(1 - (0.905X0.998))

which would represent an increase in x-ray intensity by an order of magnitude when compared to a single tungsten x-ray emission element.

3. X-Ray Source Controls.

[0175] There are several variables through which such a generic linear accumulation source may be "tuned" or adjusted to improve the x-ray output. Embodiments of the invention may allow the control and adjustment of some, all, or none of these variables.

3.1. E-beam Variations.

[0176] First, in some embodiments, the beam or beams of electrons 1 1 1 or 111 1, 1112, 1 113, etc. bombarding the x-ray generating elements 801, 802, 803... etc. may be shaped and directed using one or more electron control mechanisms 70 such as electron optics, electrostatic lenses or magnetic focusing elements. Typically, electrostatic lenses are placed within the vacuum environment of the x-ray source, while the magnetic focusing elements can be placed outside the vacuum. Various other electron imaging techniques, such as the reflective electron beam control system disclosed in the prior art REBL (Reflective Electron Beam Lithography system) as described in US Patent 6,870,172 "Maskless reflection electron beam projection lithography" may also be used to create a complex pattern of electron exposure.

[0177] Electrons may bombard the elements at normal incidence, as illustrated in FIG. 21 and again illustrated in FIG. 23A; with electron beams 1 121 , 1 122, 1 123 etc. at an angle 0, as illustrated in FIG. 23B; with electron beams 1 131 , 1 132, 1 133 etc. at multiple angles (such as a focused electron beam), as illustrated in FIG. 23C; with electron beams 1 141, 1 142, 1 143 etc. bombarding the microstructures 700 from opposite sides and at an angle Θ, as illustrated in FIG. 23D; with electron beams 1 151 , 1 152, 1 153 etc. at with varying intensity or electron density, as illustrated in FIG. 23E; with a uniform large area beam of electrons 1 1 1 as illustrated in FIG. 23F, or any combination of the many arrangements of electron beams that may be devised by those skilled in the art.

[0178] The actual design of the pattern for electron exposure may depend in part on the material properties of the x-ray generating material and/or the material filling the regions between the x-ray generating elements. If the x-ray generating material is highly absorbing, greater electron density may be used to bombard the regions that emit x-rays that have to travel the greatest distance through other x-ray generating elements, as illustrated in

FIG. 23E. Likewise, if the electron penetration depth is large, the x-ray generating material may be bombarded with electrons at an angle, as illustrated in FIG. 23B. If the electron penetration depth is larger than desired, thinner regions of x-ray generating material may be used, creating a source of smaller vertical dimension.

[0179] In many embodiments, the area of electron exposure can be adjusted so that the electron beam or beams primarily bombard the x-ray generating elements 1001, 1002, 1003, etc. and do not bombard the regions in between the elements. In many embodiments, the space between x-ray generating elements can be filled not with vacuum but with a solid material that facilitates heat transfer away from the x-ray generating elements. Such source targets comprising arrays of multiple x-ray generating elements embedded or buried in a thermally conducting substrate such as diamond were disclosed in the co-pending U.S. Patent Application Ser. No. 14/465,816 as discussed above, which has been incorporated by reference in its entirety.

[0180] If the area between the x-ray generating elements comprises solid material and is also bombarded with electrons, it too will tend to heat up under electron exposure, which will reduce the thermal gradient with the x-ray generating elements and therefore reduce the heat flow out of the x-ray generating element. Because the limit on the amount of electron energy and density is often dictated in part by the amount of energy that can be absorbed by the x-ray generating material before thermal damage, such as melting, occurs, increasing the heat transfer away from the x-ray generating elements is generally preferred, and may be in part accomplished by reducing the electron exposure of non-x-ray-producing regions. It should be noted that the generated heat from electron exposure tends to increase with increasing atomic number Z, and so selecting a substrate comprising a low Z material, such as beryllium (Z=4) or diamond (Z=6), may be preferred.

[0181] A source having multiple electron beams that are used to bombard distinct x-ray generating elements independently may also be configured to allow a different accelerating voltage to be used with the different electron beam sources. Such a source 80-B is illustrated in FIG. 24. In this illustration, the previous high voltage source 10 is again connected through a lead 21 -A to an electron emitter 11-A that emits electrons 1 1 1 -A towards a target 1 100-B.

However, two additional "boosters" for voltage 10-B and 10-C are also provided, and these higher voltage potentials are connected through leads 21-B and 21-C to additional electron emitters 1 1-B and 1 1-C which emit electrons 111-B and 1 1 1-C of different energies. Although the target 1 100-B comprising the x-ray generating elements 801 , 802, 803, ...etc. will usually be uniformly set to the ground potential, the individual electron beam sources used to target the different x-ray generating elements may be set to different potentials, and electrons of varying energy may therefore be used to bombard the different x-ray generating elements 801, 802, 803,

[0182] This may offer advantages for x-ray emission management, in that electrons of different energies may generate different x-ray emission spectra, depending on the materials used in the individual x-ray generating elements. The heat load generated may also be managed through the use of different electron energies. The design of the electron optics for such a multiple beam configuration to keep the various multiple beams from interfering with each other and providing electrons of the wrong energy to the wrong target element may be complex.

3.2. Material Variations.

[0183] Although it is simpler to treat the x-ray generating elements as identical units, and to have the intervening regions also be considered identical, there may be advantages in some embodiments to having variations in these parameters.

[0184] In some embodiments, the different x-ray generating elements may comprise different x-ray emitting materials, so that the on-axis view presents a diverse spectrum of characteristic x-rays from the different materials. Materials that are relatively transparent to x- rays may be used in the position closest to the output window 840 (e.g. the element furthest to the right in FIG. 21), while those that are more strongly absorbing may be used for elements on the other side of the array, so that they attenuate the other sources less.

[0185] In some embodiments, the distance between the x-ray generating elements may be varied, depending on the expected thermal load for different materials. For example, a larger space between elements may be used for elements that are expected to generate more heat under electron bombardment, while smaller gaps may be used if less heat is expected.

3.3. Variations in size and shape

[0186] In some embodiments, as illustrated in FIG. 25, the x-ray generating elements 1801 , 1802, 1803, ... etc. may have varying sizes and geometric shapes. This may be especially useful for situations where different materials are used, and the electron deceleration processes and x-ray absorption are different for the different materials.

[0187] A useful figure of merit that may be considered in the design of the x-ray generating elements for linear accumulation x-ray sources is the ratio of the 1/e attenuation length for the x-rays within the material to one half of the "continuous slowing down approximation" (CSDA) range for the electrons. The CSDA range for the electrons is typically larger than the penetration depth, since an electron can lose energy through several collisions as it slows down. FIG. 26A illustrates a plot of these two functions for tungsten, and FIG. 26B illustrates a plot of the ratio. The x-ray data is from the previously cited source by Henke et al., while the CSDA range data is from the Physical Measurement Laboratory of NIST

<http://physics.nist.gov/PhysRefData/Star/Text/ESTAR.h tml>. This ratio may be considered a figure-of-merit for the generation of x-rays for a material when used for the linear accumulation of x-rays, since its value is large when the x-ray transparency of the material is large (increasing Tj for that microstructure) but its value is also large when the CDSA range is small, (which means the electrons are absorbed quickly, and the x-rays appear to be emitted from a spot of smaller depth).

[0188] FIG. 27 plots this ratio for a large range of x-ray energies for three materials (Cu, Mo and W). Once an x-ray material has been selected for the characteristic lines desired, this ratio may be used to suggest a particular energy range (such as -55 keV for tungsten) so that the system may be configured to operate in so that this figure-of-merit is relatively large. [0189] As a rule of thumb, the thickness of the microstructures may be set to be ½ or less of CSDA as measured in the direction of e-beam propagation. For some selections of target materials, a thin foil coating of material may be sufficient to provide the x-ray emission needed, and more complex embedded or buried microstructures may not be required.

3.4. Time-Multiplexed Emission.

[0190] In other embodiments, the x-ray generating elements 801 , 802, 803, 804, ... etc. need not be continuously bombarded by electrons, but the electron beams 121 1, 1212, 1213, 1214, etc. ... may be switched on and off to distribute the heat load over time. This may be particularly effective when viewed on-axis, since all x-rays appear to be coming from the same origin.

[0191] A time-multiplexed embodiment is illustrated in FIG. 28. In FIG. 28A, at an initial time step t=0, the electron beams 121 1 and 1214 for elements 801 and 804 respectively are on, while the others are off. In FIG. 28B, at the next time step t=\, the electron beams 1212 and 1215 for elements 802 and 805 are on, while the others are off. In FIG. 28C, at the next time step t=2, the electron beams 1213 and 1216 for elements 803 and 806 are on, while the others are off. The system may be switched between these configurations simply by blanking the various electron beams, or by blocking the beams with mechanical shutters or by repositioning the electron beams.

[0192] Additionally, in some embodiments, electron beams may simply scan over target comprising the x-ray generating materials. In some embodiments, this may be a regular raster scan, while in other embodiments, the scan may be non-uniform, "dwelling" on or scanning over the x-ray generating region more slowly, while moving rapidly from one x-ray generating region to another. In other embodiments, an electron beam may be designed to bombard all x-ray generating regions simultaneously or multiple electron beams impinging the x- ray generating regions near simultaneously, but having the electron beam(s) turn on and off rapidly, creating a "pulsed" x-ray source. This may have some advantages for certain specific applications.

[0193] Sources with variable timing for electron exposures may also be especially useful for embodiments that use different types of embedded microstructures bombarded with electrons at different potentials, as mentioned above, to excite a diverse spectrum of x-ray energies.

3.5. Off- axis Configurations.

[0194] In other embodiments, a slightly off-axis configuration may be preferred.

Examples of such configurations are illustrated in FIG. 29.

[0195] In FIG. 29A, the x-ray emission through an off-axis window 841 or aperture in a screen 84 or wall is illustrated. Because the x-ray emission is generally isotropic, emission from all microstructures bombarded with electrons will emit in this direction as well. However, the various rays of this emission 878 that pass through the aperture 841 will not propagate in the same direction and will diverge, giving the appearance of an extended source. If the appearance of an extended source is desired, however, using such an off-axis, small -angle collection configuration for the x-rays may be suitable.

[0196] FIG. 29B illustrates the emission from multiple microstructures, this time in a direction away from the incident electron beams 1 1 1 1 , 1112, 11 13, etc. In this example, the spacing of the microstructures 801, 802, 803... is much larger relative to their size, so the off- axis angle that x-rays can be detected by a detector without attenuation from neighboring x-ray emitting elements is much smaller than for the situation illustrated in FIG. 29 A.

3.6. Multiple Independent Electron Beams.

[0197] Illustrated in FIG. 30 and FIG. 31 (which shows more detail for the target) is a more general x-ray system 80-C, incorporating some of the above-discussed elements. The system comprises an electron system controller 10-V that directs various voltages through a number of leads 21-A, 21-B, and 21-C to a number of electron emitters 1 1 -A, 1 1-B, and 1 1-C that produce electron beams 1 1 1-A, 1 11-B, 1 11-C etc. Each of these electron beams 11 1 -A, 1 1 1- B, 1 1 1-C may be controlled by signals from the system controller 10-V through leads 27-A, 27- B, and 27-C that govern electron optics 70-A, 70-B, and 70-C.

[0198] As illustrated, the system additionally comprises a cooling system, comprising a reservoir 90 filled with a cooling fluid 93, typically water, that is moved by means of a mechanism 1209 such as a pump through cooling channels 1200, including a cooling channel that passes through the substrate 1000 of the target 1 100-C. [0199] It should be noted that these illustrations are presented to aid in the understanding of the invention, and the various elements (microstructures, surface layers, cooling channels, etc.) are NOT drawn to scale.

[0200] FIG. 31 illustrates the target 1 100-C under bombardment by electrons in an extended version of this system in which two additional electron beams 1 1 1-D and 1 1 1-E have been added. As illustrated, both of the beams 1 1 1-D and 1 1 1-E have a higher current than the three electron beams to the right 1 1 1-A, 1 1 1-B, and 1 1 1-C, and the leftmost electron beam 11 1-E has a highest current density of all the beams, illustrating that the beams need not be of equal density. The leftmost x-ray generating elements 804 and 805 receiving the higher current are also illustrated as having larger gaps between them and their neighboring microstructures than is provided between the rightmost elements 801, 802, and 803, which receive lower electron current. In some embodiments, 804 and 805 may be comprised of materials that are higher in atomic number than 801, 802, and 803.

[0201] Also shown in FIG. 31 is a conducting overcoat 770 that is both thermally conducting (to remove heat) and electrically conducting, providing a return path to ground 722 for the electrons. Also provided is a screen 84 with an aperture 840 to allow x-rays that are on- axis to radiate away from the target.

3.7. Materials Selection for the Substrate.

[0202] For the substrate of a target with microstructures of x-ray generating material, as shown above it is preferred that the transmission of x-rays T for the substrate be near 1. For a substrate material of length L and linear absorption coefficient a _s ,

T= e ^~a ' ^L = e- ^L,L " [Eqn. 21]

where Ly _e is the length at which the x-ray intensity has dropped by a factor of 1/e.

[0203] Generally,

L _e oc ³ /Z ⁴ [Eqn. 22]

where Xis the x-ray energy in keV and Z is the atomic number. Therefore, to make Ly _e large (i.e. make the material more transparent), higher x-ray energy is called for, and a lower atomic number is highly preferred. For this reason, both beryllium (Z=4) and carbon (Z=6) in its various forms (e.g. diamond, graphite, etc.) may be desirable as substrates, both because they are highly transparent to x-rays, but also because they have high thermal conductivity (see Table I). 4. Other Examples of Embodiments of the Invention.

4.1. Two-sided Target

[0204] One embodiment of a source 80-D using a target with multiple x-ray generating elements arranged for linear accumulation is illustrated in FIG. 32, with the target 2200 shown in more detail in FIG. 33.

[0205] In the embodiment shown in FIG. 32, a controller 10-2 provides high voltage to two emitters 1 1-D and 1 1 -E that emit electron beams 1221 and 1222 towards opposite sides of a target 2200. The properties of the electron beams 1221 and 1222, such as the position, direction, focusing etc. are controlled by electron optics 70-D and 70-E, respectively through leads 27-D and 27-E that coordinate the properties of the beam with the beam current and high voltage settings, all governed by the controller 10-2. The target 2200 comprises a substrate 2200 and two thin coatings 2221 and 2222 of x-ray generating material, one on each side of the substrate 2200.

[0206] The electron beams 1221 and 1222 are directed by the electron optics 70-D and 70-E to bombard the thin coatings 2221 and 2222 on opposite sides of the target 2200 at locations such that the x-rays 821 and 822 that are generated from each location are aligned with an aperture 840 in a screen 84 that allows a beam of x-rays 2888 to by emitted from the source 80-D.

[0207] Although large area bombardment by electrons may achieve a greater overlap, higher x-ray emission will occur if the electron density is higher, and so the electron optics 70-D and 70-E may be used to focus the electron beams 1221 and 1222 to spots as small as 25 μιη or even smaller. For such small spots in a configuration as shown, the alignment of the two electron bombardment spots to produce superimposed x-ray emission patterns (and thereby achieve linear accumulation for the two spots) will be carried out by placing an x-ray detector beyond the aperture 840 and measuring the intensity of the x-ray beam 2888 as the position and focus of the electron beams 1221 and 1222 are changed using electron optics 70-D and 70-E. The two spots can be considered aligned when the simultaneous intensity from both spots is maximized on the detector. [0208] The target 2200 may be rigidly mounted to structures within the vacuum chamber, or may be mounted such that its position may be varied. In some embodiments, the target may be mounted as a rotating anode, to further dissipate heating.

[0209] As discussed above, the thickness of the coatings 2221 and 2222 can be selected based on the anticipated electron energy and the penetration depth or the CSDA estimate for the material. If the bombardment occurs at an angle to the surface normal, as illustrated, the angle of incidence can also affect the selection of the coating thickness. Although the tilt of the target 2200 relative to the electron beams 1221 and 1222 is shown as -45°, any angle from 0° to 90° that allows x-rays to be emitted may be used.

[0210] It should also be noted that the two-sided target described above might also be used in an embodiment comprising a rotating anode, distributing the heat as the anode rotates. A system 580-R comprising these features is illustrated in FIG. 34. In this embodiment, many of the elements are the same as in a conventional rotating anode system, as was illustrated in FIG. 6, but in the embodiment as illustrated, a controller 10-3 provides high voltage through leads 21- G and 21-F to two emitters 1 1-F and 11-G that emit electron beams 2511-F and 251 1 -G respectively. These electron beams bombard opposite sides the beveled portion of a target 500-R which has been coated on both sides with coatings 2521 & 2522 with an x-ray generating material to produce x-rays 2588. The electron spots are aligned such that the view from the It should also be clear that embodiments with additional controls, such as beam steering electron optics, or apertures to define the output x-ray beam may also be designed.

4.2. Multiple Two-sided Target

[0211] A source 80-D as described above is not limited to a single target with two sides. Shown in FIG. 35 is a pair of targets 2203, 2204, each with two coatings 2231 and 2232, and 2241 and 2242 respectively of x-ray generating material on a substrate 2230 and 2240, respectively. In this embodiment, the source will have a similar configuration to that illustrated in FIG. 32, except that there are now four electron beams 1231 , 1232, 1241 , 1242 that are controlled to bombard the respective coatings on two targets 2203, 2204 and generate x-rays 831 and 832, and 841 and 842 respectively.

[0212] In this embodiment, the four x-ray generating spots are aligned with an aperture 840 in a screen 84 to appear to originate from a single point of origin. An alignment procedure as discussed above for the case of a two-sided target, except that now the four electron beams 1231 , 1232, 1241, and 1242 are adjusted to maximize the total x-ray intensity at a detector placed beyond the aperture 840.

[0213] As discussed above, the targets 2203 and 2204 may be rigidly mounted to structures within the vacuum chamber, or may be mounted such that their position may be varied. In some embodiments, the targets 2203 and 2204 may be mounted as rotating anodes, to further dissipate heating. The rotation of the targets 2203 and 2204 may be synchronized or independently controlled.

[0214] As discussed above, the thickness of the coatings 2231 , 2232 and 2241, 2242 can be selected based on the anticipated electron energy and the penetration depth or the CSDA estimate for the material. If the bombardment occurs at an angle to the surface normal, as illustrated, the angle of incidence can also affect the selection of the coating thickness. Although the tilt of the targets 2203 and 2204 relative to the electron beams 1231, 1232 and 1222 is shown as -45°, any angle from 0° to 90° that allows x-rays to be emitted may be used.

[0215] Although only two targets with four x-ray generating surfaces are illustrated in FIG. 35, embodiments with any number of targets comprising surfaces coated with x-ray generating material may be used in the same manner, each target being bombarded on one or both sides with an independently controlled electron beam. Furthermore, the coatings for the various targets may be selected to be different x-ray materials. For example, the upstream coatings 2241 and 2242 may be selected to be a material such as silver (Ag) or palladium (Pd) while the downstream coatings 2231 and 2232 may be selected to be rhodium (Rh), which has a higher transmission for the characteristic x-rays generated by the upstream targets. This may provide a blended x-ray spectrum, comprising multiple characteristic lines from multiple elements. Furthermore, but adjusting the various electron beam currents and densities, a tunable blend of x-rays may be achieved.

[0216] Likewise, the coatings themselves need not be uniform materials, but may be alloys of various x-ray generating substances, designed to produce a blend of characteristic x- rays.

4.3. Two-sided Target with Embedded Structures [0217] FIG. 36 illustrates another embodiment in which the target comprises microstructures of x-ray generating material embedded in the substrate instead of thin coatings.

[0218] Two targets 2301 and 2302 are shown (although a single target, such as illustrated in FIGs. 32 and 33, may also be configured in this manner as well), each with four microstructures of x-ray generating material 231 1 , 2312, 2313, 2314, and 2321 , 2322, 2323, 2324, respectively embedded to on each side of a substrate 2310, 2320 respectively. Electron beams 1281, 1282, 1283, and 1284 are directed onto the targets 2301, 2302, and produce x-rays that form a beam 882 that appears to originate from the same source when aligned with an aperture 840-B in a screen 84-B.

[0219] As discussed above, the embedded microstructures for this embodiment may comprise different x-ray generating materials, or an alloy or blend of x-ray generating materials to achieve a desired spectral output.

4.4. Multiple Locations on a Slanted Surface

[0220] Another embodiment in which the target 2400 is aligned with a distributed electron beam 241 1 is illustrated in FIG. 37. In this embodiment, the electron beam 241 1 is focused to several spots onto a coating 2408 of x-ray generating material formed on a substrate 2410. The electron beam 241 1 may be adjusted so that the multiple spots are formed in an aligned row, and their x-ray emission 2488 along the row (at zero-angle) will appear to originate from a single point of origin.

[0221] A variation of this embodiment is illustrated in FIG. 38. For the target 2401 of this embodiment, instead of a coating, microstructures 2481, 2482, 2483 of x-ray generating material are embedded in the substrate 2410. The distributed electron beam 2411 bombards these microstructures, again generating x-rays 2488 that appear to originate from a single point of origin.

5. X-Ray Concentration using Additional X-Ray Optics.

[0222] In the embodiments described up to this point, multiple x-ray emissions from several points of origin are simply aligned such that they appear to be overlapped, and hence appear to simply be a single brighter x-ray source when viewed from a particular angle. [0223] However, x-ray emission is generally isotropic, and therefore most of the x-ray energy is lost if an aperture with only a small viewing angle is used.

[0224] This can be addressed by collecting additional x-rays emitted from the multiple points of origin at other angles using x-ray optical elements. Conventional optical elements for x- rays, such as grazing angle mirrors, mirrors with multilayer coatings, or more complex Wolter optics or capillary optics may be used.

[0225] In general, the relation between the targets and the optics will be established at the time of fabrication. The optics may be secured in place, either with a particular mount or an epoxy designed for use in a vacuum, using an alignment procedure such as those well known by those skilled in the art of optical fabrication. The final alignment may be accomplished as described previously, by placing an x-ray detector at the output aperture and adjusting the focus and position for the various electron beams to achieve maximum x-ray intensity. Final adjustments may also be made for the alignment of the optical elements using x-rays. It should be notes that the detector may also be used to provide feedback to the electron beam controllers, providing, for example, a measure of spectral output, which may in turn be used to direct an electron beam generating a particular characteristic line to increase or decrease its power.

[0226] It should also be noted that not all targets need to be illuminated with electrons with the same angle of incidence. For configurations with multiple x-ray emitting materials, some materials may have different penetration depths, and therefore bombarding with electrons at a different angle of incidence may be more efficient at producing x-rays for that particular target. Also, as described in the previous embodiments, different electron densities, energies, angles, focus conditions, etc. may be used for different targets.

[0227] It should also be noted that emission occurs isotropically from all the targets, and that the collection and focusing x-ray optics lenses operate on x-rays propagating in both directions. Therefore a detector placed on the opposite end of the chain of targets may serve as a monitor for the calibration, overall power of the x-ray system. 2 ^nd beam, too.

5.1. General Reflective Optics

[0228] FIG. 39 illustrates an embodiment using three aligned targets 2801 , 2802, 2803 each comprising a microstructure 2881, 2882, 2883 of x-ray generating material embedded in a substrate 281 1 , 2812, 2813. Each of the targets is bombarded by an electron beam 1 181 , 1182, 1 183 respectively to generate x-rays 2818, 2828, 2838 respectively.

[0229] Between each of the x-ray emitting targets, x-ray imaging mirror optics 2821, 2822, 2831, 2832 are positioned to collect x-rays emitted at wider angles and redirect them to a focus at a position corresponding to the x-ray generating spot another x-ray target. As illustrated, the focus is set to be the x-ray generating spot in the adjacent target, but in some embodiments, all the x-ray mirrors may be designed to focus x-rays to the same point, for example, at the final x-ray generating spot in the final (rightmost) x-ray target.

[0230] These imaging mirror optics 2821, 2822, 2831, 2832 may be any conventional x-ray imaging optical element, such as an ellipsoidal mirror with a reflecting surface typically fabricated from glass, or surface coated with a high mass density material, or an x-ray multilayer coated reflector (typically fabricated using layers of molybdenum (Mo) and silicon (Si)) or a crystal optic, or a combination thereof. The selection of the material and structure for an x-ray optic and its coatings may be different, depending on the spectrum of the x-rays to be collected and refocused. Although illustrated as cross sections, the entire x-ray optic or a portion thereof may have cylindrical symmetry.

[0231] A variation of this embodiment is illustrated in FIG. 40. In this embodiment, the first (upstream) x-ray target 2830 now comprises a substrate 2833 in which microstructures 2883 of x-ray generating material have been embedded, as has been described elsewhere. The intensity of the x-rays 2838-A emitted from this target 2830 will be increased due to the linear accumulation of the x-rays emitted from these several microstructures 2883, and may contribute to a brighter overall x-ray source in this embodiment, just as they do in the previously described embodiments. However, for this embodiment, the electron beam 1183-A may be adjusted to have a different incidence angle (as illustrated), size, shape and focus from the embodiment of FIG. 39 in order to bombard the microstructures 2883 more effectively.

[0232] Another variation of this embodiment is illustrated in FIG. 41. In this illustration, the second x-ray beam 2988-L propagating to the left is also illustrated. This second x-ray beam propagates through a second aperture 840-L in a plate 84-L, and can be used as a second x-ray exposure source, or can be used in conjunction with a detector 4444 to serve as a monitor for x-ray beam properties such as brightness, brilliance, total intensity, flux, energy spectrum, beam profile, and divergence or convergence. 5.2. Wolter Optics

[0233] Another embodiment of the invention is illustrated in FIG. 42. In this embodiment, the optical elements 2921 and 2931 collecting x-rays emitted from one target and focusing them downstream are now optical elements known as Wolter optics. Wolter optics are a well known system of nested mirrors to collect and focus x-rays, typically having parabolic and/or hyperbolic reflecting surfaces with each element typically used at grazing angle.

Typically the reflecting surface is a glass. The glass surface may be coated with a high mass density material or an x-ray multilayer (typically fabricated using layers of molybdenum (Mo) and silicon (Si)).

[0234] FIG. 43 A and FIG. 43B illustrate a prior art embodiments of Wolter optics used for x-rays comprising a variety of cylindrical lenses oriented both horizontally and vertically. As described above, the material selection and coatings used for these optical elements may be selected to match the spectrum of x-rays anticipated to be emitted from the various x-ray origins.

5.3. Capillary Optics

[0235] Another embodiment of the invention is illustrated in FIG. 44. In this embodiment, the optical elements 2941 and 2951 collecting x-rays emitted from one target and focusing them downstream are now optical elements known as polycapillary optics.

Polycapillary optics are similar to fiber optics, in that x-rays are guided through a thin fiber to emerge at the other end in a desired position. However, unlike fiber optics, which comprise a solid fiber of glass that reflects using total internal reflection, polycapillary optics comprise a number of hollow tubes, and the x-rays are guided down the tubes by an external reflection from the material at grazing angles.

[0236] Polycapillary optics are a well known means of collecting and redirecting x- rays, and any of a number of conventional polycapillary optical elements may be used in the embodiments of the invention disclosed here. It is generally considered, however, that a polycapillary optic comprising multiple capillary fibers be used so that x-rays emitted at many angles can be collected and directed to a point of desired focus.

5.4. Variations. [0237] Although specific options have been presented in the illustrations showing the reflective, Wolter or capillary optics, these are in no way meant to be limiting. The optical configurations illustrated in FIGs. 39 through 42 and 44 may be interchangeable, with for example, the Wolter optics 2931 replacing the mirrors 2821 , 2822 in FIG. 41. It should also be noted that, although targets comprising microstructures are used in these illustrations, targets comprising thin films such as were illustrated in FIGs. 33 and 35 may be used in conjunction with these focusing x-ray optics as well.

6. Limitations and Extensions.

[0238] With this application, several embodiments of the invention, including the best mode contemplated by the inventors, have been disclosed. It will be recognized that, while specific embodiments may be presented, elements discussed in detail only for some

embodiments may also be applied to others.

[0239] While specific materials, designs, configurations and fabrication steps have been set forth to describe this invention and the preferred embodiments, such descriptions are not intended to be limiting. Modifications and changes may be apparent to those skilled in the art, and it is intended that this invention be limited only by the scope of the appended claims.

[0240] All elements, parts and steps described herein are preferably included. It is to be understood that any of these elements, parts and steps may be replaced by other elements, parts and steps or deleted altogether as will be obvious to those skilled in the art.

[0241] Broadly, this writing discloses at least the following:

A compact source for high brightness x-ray generation. Higher brightness is achieved through electron beam bombardment of multiple regions aligned with each other to achieve a linear accumulation of x-rays. This is achieved by aligning discrete x-ray emitters, or through use of novel x-ray targets comprising a number of microstructures of x-ray generating materials fabricated in close thermal contact with a substrate with high thermal conductivity. This allows heat to be more efficiently drawn out of the x-ray generating material, and allows bombardment of this material with higher electron density and/or higher energy electrons, leading to greater x- ray brightness. The orientation of the micro structures allows the use of an on-axis collection angle, allowing accumulation of x-rays from several microstructures to be aligned, appearing to have a single origin, also known as "zero-angle" x-ray emission.

[0242] This writing also presents at least the following concepts.

1. An x-ray source comprising:

a vacuum chamber;

a window transparent to x-rays attached to the wall of the vacuum chamber;

and, within the vacuum chamber,

at least one electron beam emitter; and

at least one target comprising:

a substrate comprising a first selected material; and

a plurality of discrete structures

comprising a second material selected for its x-ray generation properties; in which each of the plurality of discrete structures

is in thermal contact with the substrate; and

in which at least one of the discrete structures

has a thickness of less than 10 microns, and

each lateral dimensions of said at least one of the discrete structures

is less than 50 microns.

2. The x-ray source of Concept 1, in which

the plurality of discrete structures are embedded into the surface of the substrate.

3. The x-ray source of Concept 1 or 2, in which

the plurality of discrete structures are buried into the surface of the substrate within a depth of less than 100 microns.

4. The x-ray source of Concept 1, 2, or 3, additionally comprising:

a means for directing an electron beam emitted from the emitter onto the target. The x-ray source of Concept 4, in which

the means for directing an electron beam comprises electron optics. The x-ray source of Concept 4 or 5, in which

the means for directing an electron beam comprises electrostatic lenses. The x-ray source of Concept 4, 5, or 6, in which

the means for directing an electron beam comprises magnetic lenses. The x-ray source of Concept 4, 5, 6, or 7, in which

the means for directing an electron beam allows for controlling the electron beam by an operation selected from the group consisting of:

focusing, diverging, de-focusing, scanning, raster- scanning, dwelling, blanking, sweeping, changing the beam direction, changing the beam intensity profile, forming multiple electron beams, changing the beam current density, and changing the acceleration of the electrons in the electron beam. The x-ray source of Concept 4, 5, 6, 7, or 8, in which

the means for directing an electron beam allows for

focusing the electron beam to a spot size of less than 30 microns

in at least one dimension. The x-ray source of any one of Concepts 1-9, in which

the means for directing an electron beam allows for

directing the electron beam in a pattern

that con esponds to the positions of at least some of the plurality of discrete structures. The x-ray source of Concept 10, in which

the means for directing an electron beam allows for

directing the electron beam in a pattern

that con-esponds to the positions of at least some the plurality of discrete structures, in which said pattern is adapted in time

in response to a signal from a detector monitoring predetermined properties of the emitted x-rays. The x-ray source of Concept 11 , in which

the predetermined properties of the emitted x-rays

are selected from the group consisting of:

brightness, brilliance, total intensity, flux, energy spectrum, beam profile,

and beam divergence. The x-ray source of any of the preceding Concepts, in which

the plurality of discrete structures are arranged in a linear array. The x-ray source of any of the preceding Concepts, in which

the plurality of discrete structures are fabricated to have similar shapes. The x-ray source of Concept 14, in which

the similar shapes are selected from the group consisting of

regular prisms, right rectangular prisms, cubes, triangular prisms, trapezoidal prisms, pyramids, tetrahedra, cylinders, spheres, ovoids, and barrel-shapes. The x-ray source of any of the preceding Concepts, in which

the first selected material is selected from the group consisting of:

beryllium, diamond, graphite, silicon, boron nitride, silicon carbide, sapphire and diamond-like carbon. The x-ray source of any of the preceding Concepts, in which

the second material is selected from the group consisting of:

aluminum, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, yttrium, zirconium, molybdenum, niobium, ruthenium, rhodium, palladium, silver, tin, iridium, tantalum, tungsten, indium, cesium, barium, gold, platinum, lead and combinations and alloys thereof. The x-ray source of any of the preceding Concepts, in which a subset of the plurality of discrete structures

comprise a third material selected for its x-ray generation properties. The x-ray source of Concept 18, in which

the third material is selected from the group consisting of:

aluminum, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, yttrium, zirconium, molybdenum, niobium, ruthenium, rhodium, palladium, silver, tin, iridium, tantalum, tungsten, indium, cesium, barium, gold, platinum, lead and combinations and alloys thereof. The x-ray source of any of the preceding Concepts, in which

at least one of the discrete structures is positioned

to be within 500 microns of an edge of the substrate. The x-ray source of any one of Concepts 13-20, in which

the linear array is defined to have a long axis and a short axis, and

the long axis of the linear array is aligned with the window; and

the angle between the long axis and the surface normal of the window

at the point of intersection between the long axis and the window

is less than 85 degrees. The x-ray source of Concept 21 , in which

at least one of the discrete structures is positioned

to be within 500 microns of the edge of the substrate that is closest to the window. The x-ray source of any one of Concepts 4-22, in which

the microstructures of the target are aligned such that

x-rays emitted by a predetermined one of the plurality of discrete structures

when exposed to the directed electron beam

are transmitted through another of the plurality of discrete structures. The x-ray source of any one of Concepts 21-23, in which

the target is aligned such that

x-rays emitted by a predetermined number of the plurality of discrete structures when exposed to the directed electron beam

are transmitted through one predetermined discrete structure

selected from the plurality of discrete structures. The x-ray source of any of the preceding Concepts, additionally comprising: a cooling system comprising:

a reservoir for storing a cooling fluid;

a channel within the substrate for conducting the cooling fluid;

an additional channel to conduct the fluid from the reservoir to the channel in the substrate;

an additional channel to conduct the fluid from the channel in the substrate to the reservoir; and

a pumping mechanism to pump the fluid through the system. The x-ray source of any of the preceding Concepts, additionally comprising: a mechanism to rotate the target. An x-ray source comprising:

a vacuum chamber;

a first window transparent to x-rays attached to the wall of the vacuum chamber; and, within the vacuum chamber,

one or more electron emitters; and

a plurality of x-ray targets;

with each target comprising a material selected for its x-ray generating properties, and in which at least one dimension of said material is less than 20 microns; and in which

said one or more electron emitters and said plurality of x-ray targets

are aligned such that bombardment of electrons on said targets produces x-ray sub-sources such that said sub-sources are aligned along an axis that passes through the first window. The x-ray source of Concept 27, in which

the material selected for its x-ray generating properties is selected from the group consisting of:

aluminum, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, yttrium, zirconium, molybdenum, niobium, ruthenium, rhodium, palladium, silver, tin, iridium, tantalum, tungsten, indium, cesium, barium, gold, platinum, lead and combinations and alloys thereof. The x-ray source of Concept 27 or 28, in which

the transmission of x-rays for at least one of the x-ray targets

for a predetermined x-ray energy spectrum

is greater than 50%. The x-ray source of Concept 27, 28, or 29, in which

the predetermined x-ray energy spectrum

corresponds to the emission spectrum of at least one x-ray sub-source. The x-ray source of any one of Concepts 27-30, in which

at least one of the targets additionally comprises a substrate. The x-ray source of any one of Concepts 27-31 , in which

the substrate comprises a material selected from the group consisting of:

beryllium, diamond, graphite, silicon, boron nitride, silicon carbide, sapphire and diamond-like carbon. The x-ray source of Concept 31 or 32, in which

the x-ray generating material is in the form of a thin film on the substrate. The x-ray source of any one of Concepts 27-30, in which

the target comprises a plurality of discrete structures embedded in a substrate comprising a material

with a thermal conductivity greater than 0.1 W m ^"1 °C ^" ';

and in which said discrete structures comprise a material

selected for its x-ray generating properties. The x-ray source of Concept 34, additionally comprising:

a means for directing an electron beam from at least one of the electron emitters onto one or more positions on the target to form x-ray sub-sources. The x-ray source of Concept 35, in which

the means for directing an electron beam comprises electron optics. The x-ray source of Concept 34, 35, or 36, additionally comprising

a means to align each of the electron beams such that

the centers of all the x-ray sub-sources

produced by the bombardment of the electron beams onto the targets are aligned along an axis passing through the first window. The x-ray source of any one of Concepts 27-37, in which

at least two adjacent x-ray sub-sources share a common substrate. The x-ray source of any one of Concepts 27-38, additionally comprising an x-ray optical element,

said optical element positioned such that

x-rays emitted by a sub-source

are directed by said optical element

onto an adjacent x-ray sub-source. The x-ray source of Concept 39, in which

the x-ray optical element

comprises grazing incidence x-ray reflectors. The x-ray source of Concept 40, in which

the x-ray optical element

comprises x-ray reflectors comprising multilayer coatings. The x-ray source of Concept 40, in which

the x-ray optical element

comprises x-ray reflectors with a coating

having a thickness greater than 20 nm

and comprising a material with a high mass density. The x-ray source of Concept 39, in which

the x-ray optical element

comprises a Wolter optic. The x-ray source of Concept 39, in which

the x-ray optical element

comprises a polycapillary optic. The x-ray source of Concept 39, in which

the x-ray optical element

comprises an ellipsoidal capillary optic positioned such that

the foci correspond to the center of two adjacent sub-sources. The x-ray source of Concept 39, additionally comprising

an x-ray optical element;

said optical element positioned such that

x-rays emitted by a sub-source enter said optical element and

are directed onto a predetermined position within the vacuum chamber. The x-ray source of any one of Concepts 27-46, additionally comprising

a second window transparent to x-rays attached to the wall of the vacuum chamber; such that a plurality of the sub-sources

are aligned along a line passing through both the first and the second windows. The x-ray source of Concept 47, additionally comprising:

an x-ray detector, and in which

the detector is aligned such that

the x-rays emitted by at least one of the sub-sources

fall on the detector.

An x-ray source comprising:

a vacuum chamber;

a first window transparent to x-rays attached to the wall of the vacuum chamber; and, within the vacuum chamber,

a first electron beam emitter;

a second electron beam emitter; and

a target comprising:

a substrate;

a first structure comprising material selected for its x-ray generation properties; and a second structure comprising material selected for its x-ray generation properties. The x-ray source of Concept 49 further comprising

a plurality of pairs of electron beam emitters; and

a plurality of targets comprising:

a substrate;

a first structure comprising material selected for its x-ray generation properties; and a second structure comprising material selected for its x-ray generation properties. The x-ray source of Concept 49 or 50, in which

the material of the first structure and the material of the second structure

are selected from the group consisting of:

aluminum, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, yttrium, zirconium, molybdenum, niobium, ruthenium, rhodium, palladium, silver, tin, iridium, tantalum, tungsten, indium, cesium, barium, gold, platinum, lead and combinations and alloys thereof. The x-ray source of Concepts 49, 50, or 51, in which

the substrate comprises a material selected from the group consisting of:

beryllium, diamond, graphite, silicon, boron nitride, silicon carbide, sapphire and diamond-like carbon. The x-ray source of any one of Concepts 49-52, in which

at least one of the structures is a thin film coating on the surface of the substrate. The x-ray source of any one of Concepts 49-53, in which

the first structure and the second structure

are both thin film coatings on opposite surfaces of the substrate. The x-ray source of any one of Concepts 49-54, in which

at least one of the structures

comprises one or more microstructures. The x-ray source of Concept 55, in which

the one or more microstructures are embedded in the substrate. The x-ray source of Concept 56 in which

one or more microstructures is embedded

on an opposite side of the substrate

to at least one of the other microstructures. The x-ray source of Concept 49 in which

the first electron emitter and the second electron emitter are aligned

to bombard the opposite surfaces of the target with electron beams. A method for generating x-rays, comprising

exposing at least one target comprising:

a substrate comprising a first selected material; and

a plurality of discrete structures

comprising a second material selected for its x-ray generation properties; in which each of the plurality of discrete structures

is in thermal contact with the substrate; and

in which at least one of the discrete structures

has a thickness of less than 10 microns, and

each lateral dimensions of said at least one of the discrete structures is less than 50 microns;

to an electron beam that has been shaped to expose

the plurality of discrete structures.

A method for generating x-rays, comprising

exposing a plurality of targets comprising x-ray generating material

using a plurality of electron beams

contained within a single vacuum chamber,

in which the positions of the electron beams have been adjusted

to increase the intensity of the x-rays that are emitted from the plurality of targets, and that also pass through a predetermined aperture.

Appendix A

STRUCTURED TARGETS FOR X-RAY GENERATION.

[0133] FIG. 13 illustrates a region 1001 of a target according to an embodiment of the invention that comprises an array of microstructures 700 in the form of right rectangular prisms comprising x-ray generating material arranged in a regular array. FIG. 13A presents

a perspective view of the sixteen microstructures 700 in this embodiment, while FIG. 13B illustrates a top down view of the same region, and FIG. 13C presents a side/cross-section view of the same region. (For the term "side/cross-section view" in this disclosure, the view meant is one as if a cross-section of the object had been made, and then viewed from the side towards the cross-sectioned surface. This shows both detail at the point of the cross-section as well as material deeper inside that might be seen from the side, assuming the substrate itself were transparent [which, in the case of diamond, is generally true for visible light].)

[0134] In this embodiment, the microstructures have been fabricated such that they are in close thermal contact on five of six sides with the substrate. As illustrated, the top of the microstructures 700 are flush with the surface of the substrate, but other embodiments in which the microstructure is recessed may be fabricated, and still other embodiments in which the microstructures present a topographical "bump" relative to the surface of the substrate may also be fabricated.

[0135] An alternative embodiment may have several microstructures of right rectangular prisms simply deposited upon the surface of the substrate. In this case, only the bottom base of the prism would be in thermal contact with the substrate. For a structure comprising the microstructures embedded in the substrate with a side/cross-section view as shown in FIG. 13C with depth D and lateral dimensions in the plane of the substrate of Wand L, the ratio of the total surface area in contact with the substrate for the embedded microstructures vs. deposited microstructures is

A 'Embedded (W + L)

= l + 2D [Eqn. 2]

A 'Deposited (W x L)

With a small value for D relative to W and L, the ratio is essentially 1. For larger thicknesses, the ratio becomes larger, and for a cube (D=W=L) in which 5 equal sides are in thermal contact, the Appendix A ratio is 5. If a cap layer of a material with similar properties as the substrate in terms of mass density and thermal conductivity is used, the ratio may be increased to 6.

[0136] The heat transfer is illustrated with representative arrows in FIG. 14A, in which the heat generated in microstructures 700 embedded in a substrate 1000 is conducted out of the microstructures 700 through the bottom and sides (arrows for transfer through the sides out of the plane of the drawing are not shown). The amount of heat transferred per unit time (Δ0 conducted through a material of area A and thickness d given by:

K- A- AT

AQ = [Eqn. 3]

d

where A: is the thermal conductivity in W/(m °C) and AT is the temperature difference across thickness d in °C. Therefore, an increase in surface area A, a decrease in thickness d and an increase in A all lead to a proportional increase in heat transfer.

[0137] An alternative embodiment is illustrated in FIG. 14B, in which the substrate additionally comprises a cooling channel 1200. Such cooling channels may be a prior art cooling channel, as discussed above, using water or some other cooling fluid to conduct heat away from the substrate, or may be fabricated according to a design adapted to best remove heat from the regions near the embedded microstructures 700.

[0138] Other embodiments may be understood or devised by those skilled in the art, in which the substrate may, for example, be bonded to a heat sink, such as a copper block, for improved thermal transfer. The copper block may in turn have cooling channels within it to assist in carrying heat away from the block. Alternatively, the substrate may be attached to a thermoelectric cooler, in which a voltage is applied to a specially constructed semiconductor device. In these devices, the flow of current causes one side to cool while the other heats up. Commercially available devices, such as Peltier coolers, can produce a temperature difference of up to 70 °C across the device, but may be limited in their overall capacity to remove large amounts of heat from a heat source.

[0139] Alternatively, the substrate can be attached to a cryogenic cooler, such as a block containing channels for the flow of liquid nitrogen, or be in thermal contact with a reservoir of liquid nitrogen or some other cryogenic substance, to provide more extreme cooling. When the substrate comprises a material such as diamond, sapphire, silicon, or silicon carbide, thermal conductivity generally increases with decreasing temperature from room temperature. In Appendix A such a case, designing the target so that it can withstand cooling to these lower temperatures may be preferred.

[0140] FIG. 15 illustrates an alternative embodiment in which the cavities formed in the substrate 1000 are first coated with an adhesion layer 715 (preferably of minimal thickness) before embedding the x-ray generating material that forms the microstructures 700. Such an adhesion layer may be appropriate in cases where the bond between the x-ray material and the substrate material is weak. The adhesion layer may also act as a buffer layer when the difference between thermal expansion coefficients for the two materials is large. For some choices of materials, the adhesion layer may be replaced or extended (by adding another layer) with a diffusion barrier layer to prevent the diffusion of material from the microstructures into the substrate material (or vice versa). For embodiments in which an adhesion and/or diffusion barrier layer is used, the selection of materials and thicknesses should consider the thermal properties of the layer as well, such that heat flow from the microstructures 700 to the substrate 1000 is not significantly impeded or insulated by the presence of the adhesion layer 715.

[0141] FIG. 16 illustrates an alternative embodiment in which an electrically conducting layer 725 has been added to the surface of the target. When bombarded by electrons, the excess charge needs a path to return to ground for the target to function effectively as an anode. If the target as illustrated in FIG. 13 were to comprise only discrete, unconnected microstructures 700 within an electrically insulating substrate material (such as undoped diamond), under continued electron bombardment, significant charge would build up on the surface. The electrons from the cathode would then not collide with the target with the same energy, or might even be repelled, diminishing the generation of x-rays.

[0142] This can be addressed by the deposition of a thin layer of conducting material that is preferably of relatively low atomic number, such as aluminum (Al), beryllium (Be), carbon (C), chromium (Cr) or titanium (Ti), that allows electrical conduction from the discrete microstructures 700 to an electrical path 722 that connects to a positive terminal relative to the high voltage supply. This terminal as a practical matter is typically the electrical ground of the system, while the cathode electron source is supplied with a negative high voltage.

[0143] FIG. 17 illustrates another embodiment of the invention, in which the microstructures 702 are embedded deeper, or buried, into the substrate 1000. Such an embedded microstructure may be further covered by the deposition of an additional layer 1010, which may Appendix A be, for example, diamond, providing the same heat transfer properties as the substrate. This allows heat to be conducted away from all sides of the buried microstructure 702. For such a situation, however, it is advisable to provide a path 722 to ground for the electrons incident on the structure, which may be in the form of a embedded conducting layer 726 laid down before the deposition of the additional layer 1010. In some embodiments, this conducting layer 726 will have a "via" 727, or a vertical connection, often in the form of a pillar or cylinder, that provides an electrically conducting structure to link the embedded conducting layer 726 to an additional conducting layer 728 on the surface of the target, which in turn is connected to the path 722 to ground.

[0144] FIG. 18 illustrates another embodiment of the invention, in which the microstructures in turn comprise additional structures within them. Instead of a uniform microstructure, the microstructure is shown having a bottom layer 731 , a middle layer 732, and a top layer 733. These layers may be selected to comprise different x-ray generating materials, such that the volume emits multiple characteristic lines. Alternatively, instead of having distinct layers, a microstructure comprising a number of materials arranged side-by-side may be used to achieve a desired x-ray emission spectrum. Alternatively, instead of having distinct layers, a microstructure comprising a uniform or non-uniform mixture or alloy of two or more materials may be used to achieve a desired x-ray emission spectrum. Another embodiment comprises having the middle layer 732 comprise the same material as that of the substrate, to provide high thermal dissipation for the top layer 733 and the bottom layer. Additionally, a conductive layer along the side wall (not shown) may be added to provide an electrical path to a conductive path, as was shown in FIGs. 16 and 17.

[0145] FIG. 19 illustrates another embodiment of the invention, in which the microstructures 702 are again buried within the substrate. However, in this embodiment, instead of first providing an electrically conducting layer followed by the deposition of an additional cap layer, in this embodiment only a single layer 770 is deposited, selected for a combination of electrical properties and thermally conducting properties. This may be, for example, a deposition of carbon nanotubes (Z=6) oriented vertically relative to the surface, such that they conduct both heat and electrons away from the buried microstructures 702. This single layer 770 may in turn be connected to a path 722 to ground to allow the target to serve as an anode in the x-ray Appendix A generation system. Alternatively, the material of the layer 770 may be selected to comprise aluminum (Al), beryllium (Be), chromium (Cr), or copper (Cu).

[0146] It should be clear to those skilled in the art that although several embodiments have been presented separately in FIGs. 13 - 19, and various processes for their manufacture will be presented later, the elements of these embodiments may be combined with each other, or combined with other commonly known target fabrication methods known in the art. For example, the buried microstructures 702 of FIG. 19 may also comprise multiple materials, as was illustrated in FIG. 18. Likewise, the adhesion layer 715 as illustrated in FIG. 15 may also be applied to fabrication of embedded microstructures 700 as shown in FIG. 16. The separation of these alternatives is for illustration only, and is not meant to be limiting for any particular process.

[0147] Although the microstructures illustrated in FIGs. 13-19 have been shown as regularly spaced patterns with uniform size and shape, an irregular or random pattern of uniform microstructures, or a regular pattern of microstructures having non-uniform size and shape, or an irregular pattern of microstructures having non-uniform size and shape can also be used in embodiments of the invention.

[0148] Likewise, although some embodiments have been described with

microstructures in, for example, the shape of right rectangular prisms, fabrication processes may create structures that have walls at angles other than 90°, or do not have corners that are exactly right angles, but may be rounded or beveled or undercut, depending on the artifacts of the specific process used. Embodiments in which the microstructures are essentially similar with the shapes described herein will be understood by those skilled in the art to be disclosed, even if process artifacts lead to some deviation from the shapes as illustrated or described.

[0149] Likewise, although the various examples disclosed herein may be illustrated with ordered periodic arrays of microstructures, the relative position, size and shape of the discrete microstructures need not be regular, periodic, or uniform. Arrangements of

microstructures that have a distribution of sizes, with spacing between microstructures that can have a range of distances, may also be functional.

3. Various Microstructure Geometries. Appendix A

[0150] Certain embodiments of the invention have been described in the previous section. However, aside from variations in layers and structures, various embodiments will comprise microstructures of various sizes and shapes as well.

[0151] FIG. 20 illustrates a region 101 1 of a target according to an embodiment of invention that comprises two regular arrays of microstructures 700 and 702 in the form of right rectangular prisms comprising x-ray generating material, typically a metal. The arrays are staggered laterally and at different depths such that, when under electron irradiation, each of the microstructure is surrounded by the "cooler" substrate material. The physical separation of the microstructures provides small hot spots in a sea of cooler material, thus generating many local thermal gradients that rapidly dissipate heat from the microstructures. FIG. 20A presents a perspective view of the sixteen embedded microstructures 700 and the nine buried

microstructures 702 in this embodiment, while FIG. 20B illustrates a top down view of the same region, and FIG. 20C presents a side/cross-section view of the same region.

[0152] As illustrated in FIG. 21 A, the buried microstructures 702 -A may be fabricated to be slightly larger than the embedded microstructures 700, such that electrical contact is established between the structures on different layers. If the buried microstructures 702-A have sufficient electrical conductivity, a single electrically conducting layer 725 providing a path 725 to ground may therefore be sufficient to prevent charging of both layers.

[0153] On the other hand, the configuration illustrated in FIG. 21 A may, for some settings of electron energy and material composition, provide too small an area to provide effective heat transfer and electrical conduction.

[0154] To address this, as illustrated in FIG. 2 IB, the buried microstructures 702-B may be fabricated to be buried deeper into the substrate 1000, and have their own conducting layer 726 connected by a via 727 to provide an additional electrical connection to the path 722 to ground for the buried microscructures 702-B. This configuration provides more distance between the sources of heat and x-rays, and for some applications may be preferred.

[0155] For some fabrication processes, the etching process can be tuned to provide an undercut. [ See, for example, D.S. Hwang, T. Saito and N. Fujimori, "New etching process for device fabrication using diamond", Diamond & Related Materials vol.13, pp. 2207-2210 (2004) for examples of both isotropic and anisotropic etching of diamond.] If a process with an undercut is selected to etch the cavities in the substrate that are used to form the microstructures, and the Appendix A microstructures are formed using an isotropic process such as electroplating, which can fill all portions of the cavity, microstructures that are "secured" in place may be formed, as is illustrated in FIG. 22.

[0156] FIG. 22 illustrates a region 1012 of a target according to an embodiment of invention that comprises an array of microstructures 704 that have been formed by filling cavities having an undercut in the substrate 1000. The microstructures 704 so formed are in the form of trapezoidal prisms comprising x-ray generating material. The array as shown is arranged as an embedded array in the surface of the substrate, and the "lip" or remaining substrate material around the top serves to better hold the microstructures 704 in place, preventing its detachment under stress or thermal overload. FIG. 22A presents a perspective view of the sixteen embedded trapezoidal microstructures 704 in this embodiment, while FIG. 22B illustrates a top down view of the same region, and FIG. 22C presents a side/cross-section view of the same region.

[0157] FIG. 23 illustrates a region 1013 of a target according to an embodiment of invention that comprises a checkerboard array of microstructures 700 and 701 in the form of right rectangular prisms comprising x-ray generating material. The array as shown is arranged as an embedded array in the surface of the substrate. FIG. 23A presents a perspective view of the twenty- five embedded microstructures 700 and 701 in this embodiment, while FIG. 23B illustrates a top down view of the same region, and FIG. 23C presents a side/cross-section view of the same region with recessed regions shown with dotted lines.

[0158] FIG. 24 illustrates a region 1014 of a target according to an embodiment of invention that comprises an array of microstructures 706 in the form of right regular cylinders comprising x-ray generating material. The array as shown is arranged as an array embedded in the substrate. FIG. 24A presents a perspective view of the sixteen embedded microstructures 706 in this embodiment, while FIG. 24B illustrates a top down view of the same region, and FIG. 24C presents a side/cross-section view of the same region across the center of a row of the microstructure 706.

[0159] FIG. 25 also illustrates a region 1015 of a target according to an embodiment of invention that comprises a closely packed array of microstructures 708 and 709 in the form of right regular cylinders comprising x-ray generating material. The closely packed array as shown is also arranged as an embedded array in the surface of the substrate. In this embodiment, Appendix A however, the arrangement is such that, when viewed from the side or end, there appear to be are no "gaps" in the source of the x-rays, as there would be for the arrangement of FIG. 24. FIG. 25A presents a perspective view of the eighteen embedded microstructures 708 and 709 in this embodiment, while FIG. 25B illustrates a top down view of the same region, and FIG. 25C presents a side/cross-section view of the same region with depth perception.

[0160] FIG. 26 illustrates a region 1016 of a target according to an embodiment of invention that comprises a closely packed array of microstructures 711 and 712 in the form of right triangular prisms comprising x-ray generating material. The closely packed array as shown is arranged as an embedded array in the surface of the substrate. FIG. 26A presents a perspective view of the eighteen embedded microstructures 71 1 and 712 in this example, while FIG. 26B illustrates a top down view of the same region, and FIG. 26C presents a side/cross-section view of the same region with depth perception.

[0161] FIG. 27 illustrates a region 1017 of a target according to an embodiment of invention that comprises a closely packed array of microstructures 713 and 714 in the form of tetrahedral prisms comprising x-ray generating material, in which a single face is approximately flush with the surface of the substrate 1000. The closely packed array as shown is arranged as an embedded array in the surface of the substrate. FIG. 27A presents a perspective view of the eighteen embedded microstructures 713 and 714 in this embodiment, while FIG. 27B illustrates a top down view of the same region, and FIG. 27C presents a side/cross-section view of the same region with depth perception.

[0162] FIG. 28 illustrates a region 1018 of a target according to an embodiment of invention that comprises a combination of previously described microstructures 700, 701 and 702 in the form of right rectangular prisms comprising x-ray generating material. In this embodiment, the layer of microstructures 700 and 701 embedded near the surface forms a checkerboard pattern, as was illustrated in FIG. 23, while the structure also comprises a buried layer of microstructures 702 that are placed below the "gaps" in the upper checkerboard pattern. As in the previously described cases, the microstructures in the buried layer may be large enough to be in electrical contact with the microstructures 700 and 701 in the upper embedded layer, while in other embodiments, a distinct electrically conducting layer to carry charge away from the buried microstructures 702 may be fabricated to provide a path to ground. FIG. 28A presents a perspective view of the forty-eight embedded microstructures 700, 701 , and 702 in this Appendix A embodiment, while FIG. 28B illustrates a top down view of the same region, and FIG. 28C presents a side/cross-section view of the same region with depth perception.

[0163] FIG. 29 illustrates a region 1019 of a target according to an embodiment of invention that comprises both embedded microstructures 716 and buried microstructures 717 in the form of long right rectangular prisms comprising x-ray generating material. In the embodiment as shown, for alternating layers, the long prisms are arranged to extend in directions orthogonal to each other, in a configuration that is often called a "stack-of-logs" configuration. As in the previously described cases, the microstructures 717 in the buried layer may be in electrical contact with the microstructures 716 in the upper embedded layer, while in other embodiments, a distinct electrically conducting layer to carry charge away from the buried microstructures 717 may be fabricated to provide a path to ground. FIG. 29A presents a perspective view of the microstructures 716 and 717 in this embodiment, while FIG. 29B illustrates a top down view of the same region, and FIG. 29C presents a side/cross-section view of the same region with depth perception.

[0164] FIG. 30 illustrates a region 1020 of a target according to an embodiment of invention that comprises an array of microstructures 718 in the form of spheres comprising x-ray generating material. The array as shown is arranged as an embedded array in the surface of the substrate. FIG. 30A presents a perspective view of the sixteen embedded microstructures 704 in this embodiment, while FIG. 30B illustrates a top down view of the same region, and FIG. 30C presents a side/cross-section view of the same region.

[0165] Fabrication of a region of embedded spheres as illustrated in FIG. 30 may in some embodiments have a favorable mechanical rigidity or lower manufacturing cost, but the creation of a spherical cavity in the substrate into which material may be deposited may present process challenges. Therefore, in some embodiments, a hemispherical cavity may be created in the substrate, which is then filled with x-ray generating material, or pre-fabricated spheres may be deposited on the surface and encased with a deposited overcoat material.

[0166] As discussed earlier, although the various examples disclosed herein may be illustrated with ordered periodic or regular arrays of microstructures, the relative position, size and shape of the discrete microstructures need not be regular, periodic, or uniform.

Arrangements of microstructures that have a distribution of sizes, with spacing between microstructures that can have a range of distances, may also be functional. Appendix A

[0167] For some embodiments, various metrics to determine the size and distribution of the microstructures comprising x-ray generating material may be used. Microstmctures may be designated to be a predetermined thickness D within the target, where, as discussed before, D may be selected to be a certain fraction of the electron penetration depth for a electrons of a given energy in a given x-ray generating material (such as, for example, 30% or 50%) or may be a range of allowed depths. Microstructures may be specified such that their lateral dimensions L and Wdo not exceed D by more than a specific factor (e.g. a factor of 2 or 3), and that any individual microstmcture be no closer than a predetermined distance d to a neighboring microstmcture. Alternatively, microstmctures may be specified such that their lateral dimensions L and W do not exceed the x-ray attenuation length (the length at which the intensity of an x-ray beam of a specific energy falls off by a factor of 1/e), which will be different for different applications.

[0168] In the most general case, the region comprising microstmctures may be specified by defining a volume fraction of the entire area to be exposed to electrons up to the thickness D that will comprise x-ray generating material. For example, if microstmctures of tungsten (W) are to be used with 60 keV electrons, the penetration depth from Table II is 2.41 microns, and a value of D = 1 micron would represent a thickness of 41% of the penetration depth. Defining a volume fraction of 50% for the initial layer of thickness

D=\ μηι could either be achieved by using, for example, the checkerboard array of FIG. 23, or by a more random distribution of microstmctures of varying sizes and shapes as long as the volume fraction of x-ray generating material to substrate material was approximately 50% within the region of the target comprising microstmctures and not including the surrounding target substrate. Such configurations may offer, for example, an advantage in terms of additional surface area for heat transfer.

[0169] The volume fraction for the x-ray generating region may also be set to varying values, depending on the electron energy, the x-ray generating material properties, and the substrate reabsorption properties. For some applications requiring specific characteristic lines, configurations with a lower volume fraction may be preferred. For other variations on the emission spectmm, such as those with a range of wavelengths, a higher volume fraction that increases the bremsstrahlung may be preferred. In general, volume fractions in the first layer of thickness D may be set to be between 15% and 85% for various applications. Appendix A

[0170] Alternatively, in some embodiments, spherical microstructures of x-ray generating material may be prepared in advance, and then dispersed onto the surface of the substrate. A process that fixes the microstructures in place may be used, particularly if it is desired that the microstructures be positioned in a regular array (as was illustrated in

FIG. 30). This may be followed by a deposition process that encases these spherical

microstructures in a thermally conducting material. In some embodiments, this may be a material chosen only for its thermally conducting properties, while in other cases, the deposited material may be selected as a mixture of materials selected so that both thermal conductivity and electrical conductivity are beneficial, and the encasing material also serves as the electrically conducting layer that provides a path to ground.

[0171] In another embodiment, the dispersal of microstructures comprising x-ray generating material need not be confined to uniform spheres, but may be a number or particles of various sizes and shapes. This is illustrated in FIG. 31, in which a region 1021 of a target according to the invention comprises non-uniform microstructures. Likewise, in a similar embodiment, a region 1022 of a target according to the invention may comprise microstructures not only of varying sizes and shapes, but microstructures of different material compositions as well, as illustrated in FIG. 32.

[0172] Up to this point, embodiments that are arranged in planar configurations have been presented. These are generally easier to implement, since equipment and process recipes for deposition, etching and other planar processing steps are well known from processing devices for microelectromechanical systems (MEMS) applications using planar diamond, and from processing silicon wafers for the semiconductor industry.

[0173] However, in some embodiments, a surface with additional properties in three dimensions (3-D) may be desired. As discussed previously, when the electron beam is larger than the electron penetration depth, the apparent x-ray source size and area is at minimum (and brightness maximized) when viewed parallel to surface, i.e. at a zero degree (0°) take-off angle. As a consequence, the apparent brightest of x-ray emission occurs when viewed at 0° take-off angle. The emission from within the x-ray generating material will accumulate as it propagates at 0° through the material.

[0174] However, with an extended target of substantially uniform material, the attenuation of x-rays between their points of origin inside the target as they propagate through Appendix A the material to the surface increases with decreasing take-off angle, due to the longer distance traveled within the material, and often becomes largest at or near 0° take-off angle. Reabsorption may therefore counterbalance any increased brightness that viewing at near 0° achieves. The distance through which an x-ray beam will be reduced in intensity by 1/e is called the x-ray attenuation length, and therefore, a configuration in which the emitted x-rays pass through as little additional material as possible, with the distance selected to be related to the x-ray attenuation length, may be desired.

[0175] An illustration of one embodiment of a target is presented in FIG. 33. In FIG. 33, an x-ray generating region comprising a single microstructure 2700 is configured at or near a recessed edge 2003 of the substrate on a shelf 2002, similar to the situation illustrated in FIG. 10. The x-ray generating microstructure 2700 is in the shape of a rectangular bar of x-ray generating material, is embedded in a substrate 2000, and emits

x-rays 2888 when bombarded with electrons 11 1.

[0176] The thickness of the bar D (along the surface normal of the target) is selected to be between one third and two thirds of the electron penetration depth of the x-ray generating material at the incident electron energy for optimal thermal performance. It may also be selected to obtain a desired x-ray source size in the vertical direction. The width of the bar Wis selected to obtain a desired source size in the corresponding direction. As illustrated, W~ 1.5Z ⁾ , but could be substantially smaller or larger, depending on the size of the source spot desired.

[0177] The length of the bar L as illustrated is L ~ 4D , but may be any dimension, and may typically be determined to be between ¼ to 3 times the x-ray attenuation length for the selected x-ray generating material. The distance between the edge of the shelf and the edge of the x-ray generating material p as illustrated \sp ~ W, but may be selected to be any value, from flush with the edge 2003 (p=0) to as much as 1 mm, depending on the x-ray reabsorption properties of the substrate material, the relative thermal properties, and the amount of heat expected to be generated when bombarded with electrons.

[0178] An illustration of an alternative embodiment of the invention is presented in FIG. 34. In this embodiment as illustrated, a target according to the invention comprising an x- ray generating region with six microstructures 2701 , 2702, 2703, 2704, 2705, 2706 is configured at or near a recessed edge 2003 of the substrate on a shelf 2002, similar to the situation illustrated in FIG. 10 and FIG. 33. The x-ray generating microstructures 2701 , 2702, 2703, 2704, 2705, Appendix A

2706 are arranged in a linear array of x-ray generating right rectangular prisms embedded in a substrate 2000, and emit x-rays 2888-D when bombarded with electrons 1 1 1.

[0179] In this embodiment, the total volume of x-ray generating material is the same as in the previous illustration of FIG. 33. The thickness of the bar D (along the surface normal of the target) is selected to be between one third and two thirds of the electron penetration depth of the x-ray generating material at the incident electron energy for optimal thermal performance, as in the case shown in FIG. 33. The width of the bar Wis selected to obtain a desired source size in the corresponding direction and as illustrated, W~ 1.5 D, as in the case shown in FIG. 33. As discussed previously, it could also be substantially smaller or larger, depending on the size of the source spot desired.

[0180] However, the single bar 2700 of length L as illustrated in FIG. 33 has been replaced with 6 sub-bars 2701, 2702, 2703, 2704, 2705, 2706 each of length 1 =Z/6. Although the volume of x-ray generation (when bombarded with the same electron density) will be the same, each sub-bar now has five faces transferring heat into the substrate, increasing the heat transfer away from the x-ray generating sub-bars 2701-2706 and into the substrate. As illustrated, the separation between the sub-bars is a distance d ~ 1, although larger or smaller dimensions may also be used, depending on the amount of x-rays absorbed by the substrate and the relative thermal gradients that may be achieved between the specific materials of the x-ray generating microstructures 2701-2706 and the substrate 2000.

[0181] Likewise, the distance between the edge of the shelf and the edge of the x-ray generating material p as illustrated is p ~ W, but may be selected to be any value, from flush with the edge 2003 (p=0) to as much as 1 mm, depending on the x-ray reabsorption properties of the substrate material, the relative thermal properties, and the amount of heat expected to be generated when bombarded with electrons.

[0182] For a configuration such as shown in FIG. 34, the total length of the x-ray generating sub-bars will commonly be about twice the linear attenuation length for x-rays in the x-ray generating material, but can be selected from half to more than 3 times that distance.

Likewise, the thickness of the bar (along the surface normal of the target) D was selected to be equal to one third to two thirds of the electron penetration depth of the x-ray generating material at the incident electron energy for optimal thermal performance, but it can be substantially larger. Appendix A

It may also be selected to obtain a desired x-ray source size in that direction which is approximately equal.

[0183] The bars as shown may be embedded in the substrate (as shown), but if the thermal load generated in the x-ray generating material is not too large, they may also be placed on top of the substrate.

[0184] An illustration of another embodiment of the invention is presented in

FIG. 35, which shows a region 2001 of a target according to an embodiment of invention with an array of microstructures 2790 and 2791 comprising x-ray generating material having a thickness D. The array as shown is a modified checkerboard pattern of right rectangular prisms, but other configurations and arrays of microstructures may be used as well.

[0185] As in other embodiments, these microstructures 2790 and 2791 are embedded in the surface of the substrate. However, the surface of the substrate comprises a predetermined non-planar topography, and in this particular case, a plurality of steps along the surface normal of the substrate 2000. As illustrated, the height of each step is h ~ D, but the step height may be selected to be between lx and 3x the thickness of the microstructures. The total height of all the steps may be selected to be equal or less than the desired x-ray source size along the vertical (thickness) direction.

[0186] The total width of the microstructured region may be equal to the desired x-ray source size in the corresponding direction. The overall appearance resembles a staircase of x-ray sources. FIG. 35A presents a perspective view of the eighteen embedded microstructures 2790 and 2791 in this embodiment, while FIG. 35B illustrates a top down view of the same region, and FIG. 35C presents a side/cross-section view of the same region. An electrically conductive layer may be coated on the top of the staircase structures when the substrate is beryllium, diamond, sapphire, silicon, or silicon carbide.

[0187] FIG. 36 illustrates the x-ray emission 888-S from the staircase embodiment of FIG. 35C when bombarded by electrons 1 1 1. As in the other embodiments, the prisms of x-ray generating material heat up when electrons collide with them, and because each of the prisms of x-ray generating material has five sides in thermal contact with the substrate 2000, conduction of heat away from the x-ray material is still larger than a configuration in which the x-ray material is deposited on the surface. However, to one side, the emission is of x-rays unattenuated by Appendix A absorption from other neighboring prisms and negligibly attenuated by neighboring substrate material.

[0188] The brightness of x-rays from each prism will therefore be increased, especially when compared to the x-ray emission from the embodiment of, for example,

FIG. 23, which also illustrates a number of prisms 700 and 701 of x-ray generating material arranged in a checkerboard pattern. In the configuration of FIG. 23, each prism is embedded in the substrate, therefore having five surfaces in thermal contact with the substrate 1000, but the emission to the side at 0° will be attenuated by both the prisms of the neighboring columns and the substrate material.

[0189] Such an embodiment comprising a target with topography may be manufactured by first preparing a substrate with topography, and then embedding the prisms of x-ray material following the fabrication processes for the previously described planar substrates. Alternatively, the initial steps that create cavities to be filled with x-ray material may be enhanced to create the staircase topography structure in an initially flat substrate.

In either case, additional alignment steps, such as those known to those skilled in the art of planar processing, may be employed if overlay of the embedded prisms with a particular feature of topography is desired.

[0190] Microstrutures may be embedded with some distance to the edges of the staircase, as illustrated in FIGs. 35 and 36, or flush with as edge (as was shown in FIG. 9).

A determination of which configuration is appropriate for a specific application may depend on the exact properties of the x-ray generation material and substrate material, so that, for example, the additional brightness achieved with increased electron current enabled by the thermal transfer through five vs. four surfaces may be compared with the additional brightness achieved with free space emission vs. reabsorption through a section of substate material. The additional costs associated with the alignment and overlay steps, as well as the multiple processing steps that may be needed to pattern multiple prisms on multiple layers, may need to be considered in comparison to the increased brightness achievable.

[0191] The embodiments described so far describe a variety of x-ray target

configurations that comprise a plurality of microstructures comprising x-ray material that can be used as targets in x-ray sources to generate x-rays with increased brightness. These target configurations have been described as being bombarded with electrons and emitting x-rays, but Appendix A may be used as the static x-ray target in an otherwise conventional source, replacing either the target 01 from the transmission x-ray source 08 of FIG. 1 , or the target 100 from the reflective x- ray source 80 of FIG. 2, with a target according to the invention.

[0192] It is also possible that the embodiments as described could be equally well applied to a moving x-ray target, replacing, for example, the target 500 from the rotating anode x-ray source 80 of FIG. 6 with a target according to the invention.

[0193] FIG. 37 illustrates an embodiment of the invention configured as a rotating anode 2500. On the outer annulus of the rotating anode 2500, a plurality of x-ray generating materials have been formed, and may be formed by any of the processes previously described. In the embodiment as illustrated in FIG. 37, two distinct materials are illustrated, each with various microstructures in the form of either annular rings 2508 and 2509 or square structures 2518 and 2519.

[0194] As in the conventional rotating anode, electrons bombard the target anode 2500 at the edge, which may be beveled, just as a conventional rotating anode is beveled, and the source of the electron beam directs the electron beam onto the beveled edge 2510 of the target anode 2500, generating x-rays from a target spot 2501. As the target spot 2501 generates x-rays, it heats up, but as the target anode 2500 rotates, the heated spot moves away from the target spot 2501 , and the electron beam now irradiates a cooler portion of the target anode 2500. The hot spot has the time of one rotation to cool before becoming heated again when it passes through the hot spot 2501. By continuously rotating the target anode 2500, a single spot never becomes too hot, yet a continuous source of x-rays can be provided.

[0195] As in the previously described rotating anode system, additional cooling channels may be provided in the rotating anode to further cool the anode, allowing bombardment with electrons at higher voltages or with higher current densities to make a brighter x-ray source. However, if the target material in the rotating anode uses a plurality of microstructures according to the invention disclosed herein, the improved thermal properties may allow higher electron power loading. This enables an x-ray source of higher brightness, because the electron energy and current may be increased once the additional heat load can be accommodated. Alternatively, the thermal benefits may be used to enable a rotating anode source of the same brightness, but with components that are easier to engineer, such as lower voltage, lower current, or slower anode rotation speed. Appendix A

4. Fabrication Processes.

[0196] The methods for fabricating the targets according to the invention involve a number of steps that are outlined in the flow chart of FIG. 38, and the cross-section diagrams of FIGs. 39 - 40.

4.1. Selecting a Substrate.

[0197] In the initial step, a substrate 3000 of a suitable material is selected. In

FIG. 39A, this is denoted by the step designated "1)". As discussed above, this will typically be a material selected for various physical and thermal properties, and in particular, low mass density, low Z, and a high thermal conductivity. Several candidates for substrate materials are listed in Table I, several with high thermal conductivity (i.e. materials with thermal conductivity greater than 100 W/(m °C)). Among these materials, diamond stands out as a potential substrate. At room temperature, the thermal conductivity is -2200 W/(m °C), one of the highest values known for any material. At lower temperatures, approximately -120 °C, this value can increase to be almost three times higher.

[0198] Wafers of CVD grown diamond up to 120 mm in diameter and with diamond coatings up to 2 mm thick may be may be purchased from Diamond Materials GmbH of Freiburg, Germany. Substrates of silicon coated with diamond or diamond on insulator (DOI) may also be purchased from, for example, Advanced Diamond Technologies, Inc. of

Romeoville, IL or sp3 Diamond Technologies of Santa Clara, CA. Diamond-like carbon (DLC) films such as those manufactured by Richter Precision, Inc. of East Petersburg, PA may also be useful as substrate materials.

[0199] Beryllium may also be a candidate for a substrate material. With a low atomic number (Z=4), beryllium is very lightweight and is especially transparent to x-rays, and therefore less likely to be a source of continuum x-rays that might interfere with the

x-ray emission from the plurality of microstructures embedded within the substrate. Beryllium wafers may be commercially purchased from, for example, American Elements, Inc. of Los Angeles, CA, and Atomergic Chemetals Corporation of Farmingdale, New York. Appendix A

[0200] Other materials that may be suitable as substrates are graphite, silicon, boron nitride, gallium nitride, silicon carbide and sapphire. Other suitable materials may also be known to those skilled in the art.

4.2. Patterning the Substrate.

[0201] Once a substrate is selected, the next step 3100, as shown in FIG. 38, is to pattern the substrate 3001, as shown in FIG. 39A. There are several known approaches to patterning diamond for MEMS applications, nanoimprint lithography, and other processes. [See, for example, H. Masuda et al., "Fabrication of Through-Hole Diamond Membranes by Plasma Etching Using Anodic Porous Alumina Mask", Electrochemical and Solid-State Letters, vol. 4(1 1), pp. G101-G103 (2001); Y. Ando et al. "Smooth and high-rate reactive ion etching of diamond", Diamond and Related Materials vol. 11 (2002) pp. 824-827 (2002); X.D. Wang et al. "Precise patterning of diamond films for MEMS application", J. Material Processing

Technology vol. 127, pp. 230-233 (2002); and J. Taniguchi et al., "Diamond Nanoimprint Lithography", Nanotechnology vol. 13 pp. 592-596 (2002), and D.S. Hwang, T. Saito and . Fujimori , "New etching process for device fabrication using diamond", Diamond & Related Materials vol. 13, pp. 2207-2210 (2004).]

[0202] In the process cited above by Masuda et al., a polished polycrystalline diamond film ~3 mm thick is patterned using a porous alumina mask. The mask is prepared in advance using a silicon carbide mold to texture an aluminum surface, which is subsequently oxidized through an anodization process. The alumina film so formed has pores with positions determined by the texture on the SiC mold. The film is then removed from its aluminum substrate and transferred to the diamond surface. The diamond is then subjected to an oxygen reactive ion etch process, in which the porous alumina film acts as a mask.

[0203] Representative steps for this process step 3100 are illustrated with the corresponding steps in FIG. 39A denoted by "a)", "b)", "2)", "3)" and "4)".

[0204] In FIG. 39A step "a)", a mask 3060 is formed and patterned on a substrate 3050. The mask may be, for example, alumina patterned on an aluminum substrate. In step "b)", the mask is removed. In step "2)", the mask 3060 is attached to the substrate 3000. In step "3)", the mask and substrate undergo a pattern transfer step, such as an oxygen reactive ion etch (RIE), Appendix A creating the patterned substrate 3001 from the initial substrate 3000. In step "4)", the mask 3060 is removed, and leaving the patterned substrate 3001.

[0205] Alternatively, the substrate may be patterned using conventional lithographic processes. These may include coating the substrate with a photoresist, such as HSQ, and exposing the resist using electron beams or ultraviolet photons in a pattern that represents the desired structure to be formed on the wafer. The resist is then developed to remove the exposed regions, laying the substrate bare. The substrate and patterned resist combination are then processed with a suitable etching process (such as a reactive ion etch (RIE) with oxygen gas) that transfers the pattern in the resist into the substrate. Once this is completed, the excess resist is removed, leaving a patterned substrate essentially the same as the patterned substrate 3001 designated by step "4)" in FIG. 39A and 39B.

[0206] In a variation on the lithographic patterning process described above, the substrate may be coated with a specially selected material that serves as a hard mask for patterning the substrate. The steps in this case are: coating of a hard mask onto the substrate, coating resist onto the hard mask, patterning the resist with either electron or optical exposure, developing the resist, transferring the pattern from the resist into the hard mask, and transferring the pattern from the hard mask into the substrate, leaving a patterned substrate essentially the same as the patterned substrate 3001 designated by step "4)" in

FIGs. 39A and 39B. Such lithographic processes and their variations may be well known to those skilled in the art.

[0207] In other alternatives to the lithographic patterning processes discussed above, the substrate may also be directly ion milled using a machine such as a focused ion beam. Other techniques, such as laser etching, may also be used to pattern the substrate.

4.3. Embedding the X-ray Material.

[0208] Once a substrate has been patterned, the next step is the deposition of a material that can produce x-rays of desired characteristics into the patterned cavities 3300. This may be through any number of well-known deposition techniques, depending on the material, including chemical vapor deposition (CVD), sputtering, electroplating, mechanical stamping, or others that will be known to those skilled in the art. Various materials may be selected for use as x-ray generating materials, including aluminum, titanium, vanadium, chromium, manganese, iron, Appendix A cobalt, nickel, copper, gallium, zinc, yttrium, zirconium, molybdenum, niobium, ruthenium, rhenium, rhodium, palladium, silver, tin, iridium, tantalum, tungsten, indium, cesium, barium, gold, platinum, lead and combinations and alloys thereof.

[0209] Representative steps for this process step 3300 are illustrated with the corresponding steps in FIG. 39B denoted by "5)".

[0210] Once the x-ray material has been deposited, there is typically an excess of material on the substrate. The following step of polishing 3500 with either a mechanical/abrasive polishing process, or a chemical-mechanical polishing (CMP) process, removes the excess material, leaving behind the cavities in the patterned substrate 3001 now filled with discrete microstructures 3401 of x-ray material, as illustrated with the corresponding step in FIG. 39B denoted by "6)".

4.4. An Adhesive Alternative

[0211] Some materials, when used in combination with certain substrates, may form an interface layer that provides a good bond between the two. For example, for a selected x-ray material such as tungsten, CVD deposition of tungsten material 3400 onto a patterned diamond substrate 3001 can be adequate to fill the cavities in the diamond, with the tungsten forming a strong carbide bond in the boundary between the tungsten and the carbon. However, for other materials, such as copper, the use of an adhesive layer, such as the deposition of a 10 nm thick layer of titanium (Ti) or chromium (Cr) between the copper and a diamond substrate may be preferred to improve the mechanical integrity of the anode, both by increasing the adhesion between the two materials, and also in some cases by preventing diffusion of material from one region into the other.

[0212] Representative steps for this process step are illustrated with the corresponding steps in FIG. 40 denoted by "5)", "5a)", "6a)" and "7a)".

[0213] In FIG. 40 starting with the patterned substrate 3001 , step "5a)" illustrates the deposition of a suitable adhesion layer 3350 onto the patterned substrate 3001. Typical adhesion layers 3350 may be layers of chromium (Cr) or titanium (Ti) when used, for example, with copper (Cu) as the x-ray material. Other materials may include carbide alloys of the target material, such as copper carbide (CuC) for copper or aluminum carbide (AIC) for aluminum. Additionally, other materials with good adhesion to both materials known to those skilled in the Appendix A art may be used. As an example, molybdenum is often used as a barrier layer for copper.

Furthermore, multiple layers of materials, such as titanium carbide (TiC) bilayers or chromium carbide (CrC) bilayers may be used as adhesion layers. The thickness of the adhesion layer may vary with the selection of x-ray material and substrate material, but will typically be on the order of 10 nm thick. Once deposited, the deposition step may be followed by a carbonization step, to form a carbide compound with the substrate. In other embodiments, a carbide material may be directly deposited to provide an adhesion layer.

4.5. Overcoats.

[0214] Once a substrate has been patterned and the cavities filled to create

microstructures of x-ray material, the next step is the deposition of a conducting layer, so that electrons impinging on the x-ray material will have a path to ground.

[0215] A representative illustration for this process step 3700 is shown with the corresponding result in FIG. 39B denoted by "7)".

[0216] The deposited material 3750 may be any one of a number of electrically conducting materials, such as beryllium (Be), aluminum (Al), chromium (Cr), titanium (Ti), silver (Ag), gold (Au), copper (Cu), or carbon materials such as graphite or carbon nanotubes. The material may be as thin as 5 nm or as thick as 100 nm, and in some circumstances, such as if there are larger topography variations in the substrate with filled cavities, the material may be as thick as 500 nm.

[0217] The deposition techniques may be any number of a variety of deposition techniques, including but not limited to chemical vapor deposition (CVD), sputtering, electroplating, mechanical stamping, or others that will be known to those skilled in the art.

[0218] Once the electrically conducting layer has been deposited, a final protective overcoat, or cap layer, may also be deposited.

[0219] A representative illustration for this process step 3900 is shown with the corresponding result in FIG. 39B denoted by "8)".

[0220] The deposited material 3950 may be any one of a number of materials, but may be typically selected to be the same material used for the substrate, such as diamond (C) diamond-like carbon (DLC), or beryllium (Be), or another materials, such as silicon carbide Appendix A

(SiC), chromium (Cr), molybdenum (Mo), rhodium (Rh) and palladium (Pd). The material may be as thin as 100 nm, or may be as thick as 50 μηι.

[0221] The deposition techniques may be any number of a variety of deposition techniques, including but not limited to chemical vapor deposition (CVD), sputtering, electroplating, mechanical stamping, or others that will be known to those skilled in the art.

[0222] To have good adhesion to the layers below, the deposition of the cap layer may be preceded by the deposition of an adhesion layer, such as a titanium carbide (TiC) to form a seed layer for the growth of diamond. The deposition may be very thin, perhaps between 1 and 5 nm, to provide this seed layer.

4.6. Process Combinations.

[0223] Once these steps have been completed, the final object, denoted with "8)" in FIG. 39B, comprises a substrate comprising a plurality of microstructures of x-ray generating material suitable for use as a target in an x-ray source.

[0224] Although certain processes steps have been described in certain sequences, it should be known that certain steps may be executed in a different order or combined with each other to achieve a similar result.

[0225] For example, the electrically conducting layer has been described as occurring before the deposition of a cap layer, but a layer that combines these functions (i.e. an electrically conducting cap layer) such as that illustrated in FIG. 19. Likewise, some of the process steps may be repeated to deposit multiple layers of target materials, as was illustrated in FIG. 18.

[0226] Furthermore, multiple layers of microstructures, as were illustrated in FIG. 21, may be created by repeating process steps (or portions thereof) as described in this section.

Appendix A

FIG. 13C Appendix A

FIG. 14A

1000

FIG. 14B Appendix A

1000

FIG. 15

FIG. 16 Appendix A

1000

FIG. 18 Appendix A

1000

FIG. 19 Appendix A

FIG. 20B

FIG. 20C

FIG.21A

FIG.21B Appendix A

FIG. 22A

FIG. 22B

1000

FIG. 22C Appendix A 3

FIG. 23A

FIG. 23B

FIG. 23C Appendix A

FI 24A

FIG. 24B

1000

FIG. 24C Appendix A

FIG. 25A

FIG. 25B

FIG. 25C Appendix A

F

FIG. 26B

FIG. 26C Appendix A

FIG. 27B

FIG. 27C Appendix A

FIG. 28A

FIG. 28C Appendix A

1000

FIG. 29C Appendix A

FIG. 30A

1000

FIG. 30C Appendix A

FIG. 32 Appendix A

FIG. 33 Appendix A

FIG. 34 Appendix A

FIG. 35B

FIG. 35C Appendix A

Appendix A

FIG. 37 Appendix A

Substrate (e.g. Diamond)

Pattern the Substrate

3100

Substrate

w/ cavities/voids

Deposit X-ray Material

3300

Remove

Excess X-ray Material

3500

Substrate

w/ filled cavaties/voids

Deposit Conducting Overcoat

3700

Deposit Cap Layer

3900

Final Target:

X-ray microscructures

on Substrate

FIG. 38

Appendix A

FIG. 39B Appendix A

FIG. 40