Title:
ZINC OXIDE CRYSTAL GROWTH SUBSTRATE
Document Type and Number:
WIPO Patent Application WO2004104274
Kind Code:
A3
Abstract:
A zinc oxide crystal growth substrate is disclosed. The zinc oxide crystal growth substrate includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate surface by a chemical deposition process. The chemical deposition process is selected from RF sputtering, CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), spin coating, electrophoresis, and hydrothermal growth processes. The self supporting substrate may be amorphous, polycrystalline, or crystalline. The thin layer of zinc oxide has a crystal lattice which permits the crystal growth of a crystal compatible with zinc oxide. The compatible crystal has a lattice parameter within about 5% of a corresponding lattice parameter of the zinc oxide.
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Inventors:
BURGENER ROBERT H II (US)
FELIX ROGER L (US)
RENLUND GARY M (US)
FELIX ROGER L (US)
RENLUND GARY M (US)
Application Number:
PCT/US2004/015881
Publication Date:
August 11, 2005
Filing Date:
May 20, 2004
Export Citation:
Assignee:
BURGENER ROBERT H II (US)
FELIX ROGER L (US)
RENLUND GARY M (US)
FELIX ROGER L (US)
RENLUND GARY M (US)
International Classes:
B32B9/00; B32B9/04; B32B13/04; B32B19/00; C30B25/00; C30B29/16; H01L21/363; H01L21/365; H01L21/368; H01L21/20; C30B; (IPC1-7): B32B13/04; B32B9/04; B32B19/00; B32B9/00
Foreign References:
| US4399441A | 1983-08-16 | |||
| JP2002068890A | 2002-03-08 | |||
| EP1219731A1 | 2002-07-03 | |||
| US6673478B2 | 2004-01-06 | |||
| US3664867A | 1972-05-23 |
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