Title:
beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO2004074556
Kind Code:
A3
Abstract:
A method for growing a beta-Ga2O3 single crystal hardly cracking and having a weakened twinning tendency and an improved crystallinity, a method for growing a thin-film single crystal with high quality, a Ga2O3 light-emitting device capable of emitting light in the ultraviolet region, and its manufacturing method are disclosed. In an infrared-heating single crystal manufacturing system, a seed crystal and a polycrystalline material are rotated in mutually opposite directions and heated, and a beta-Ga2O3 single crystal is grown in one direction selected from among the a-axis <100> direction, the b-axis <010> direction, and c-axis <001> direction. A thin film of a beta-Ga2O3 single crystal is formed by PLD. A laser beam is applied to a target to excite atoms constituting the target. Ga atoms are released from the target by a thermal and photochemical action. The free Ga atoms are bonded to radicals in the atmosphere in the chamber. Thus, a thin-film of a beta-Ga2O3 single crystal is grown on a substrate of a beta-Ga2O3 single crystal. A light-emitting device comprises an n-type substrate produced by doping a beta-Ga2O3 single crystal with an n-type dopant and a p-type layer produced by doping the beta-Ga2O3 single crystal with a p-type dopant and junctioned to the top of the n-type substrate. The light-emitting device emits light from the junction portion.
Inventors:
ICHINOSE NOBORU (JP)
SHIMAMURA KIYOSHI (JP)
AOKI KAZUO (JP)
GARCIA VILLORA ENCARNACION ANT (JP)
SHIMAMURA KIYOSHI (JP)
AOKI KAZUO (JP)
GARCIA VILLORA ENCARNACION ANT (JP)
Application Number:
PCT/JP2004/001653
Publication Date:
November 11, 2004
Filing Date:
February 16, 2004
Export Citation:
Assignee:
UNIV WASEDA (JP)
ICHINOSE NOBORU (JP)
SHIMAMURA KIYOSHI (JP)
AOKI KAZUO (JP)
GARCIA VILLORA ENCARNACION ANT (JP)
ICHINOSE NOBORU (JP)
SHIMAMURA KIYOSHI (JP)
AOKI KAZUO (JP)
GARCIA VILLORA ENCARNACION ANT (JP)
International Classes:
C30B23/02; H01L33/02; H01L33/26; (IPC1-7): C30B29/16; C30B13/34; H01L33/00; H01S5/323
Domestic Patent References:
| WO2002089223A1 | 2002-11-07 |
Foreign References:
| JP2002068889A | 2002-03-08 |
Other References:
VILLORA E.G. ET AL: "Cathodoluminescence of undoped Beta-Ga2O3 single crystals", SOLID STATE COMMUNICATIONS, vol. 120, 2001, pages 455 - 458, XP002981301
DINESCU M. ET AL: "ZnO thin film deposition by laser ablation of Zn target in oxygen reactive atmosphere", APPLIED SURFACE SCIENCE, vol. 106, 1996, pages 149 - 153, XP000856181
DINESCU M. ET AL: "ZnO thin film deposition by laser ablation of Zn target in oxygen reactive atmosphere", APPLIED SURFACE SCIENCE, vol. 106, 1996, pages 149 - 153, XP000856181
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