A method of manufacturing a field-effect transistor substantially consisting or organic materials

Title:

A method of manufacturing a field-effect transistor substantially consisting or organic materials

Document Type and Number:

WIPO Patent Application WO1999010939

Kind Code:

A9

Abstract:

A practical method of manufacturing an organic field-effect transistor is disclosed. By applying the insulating layer having a thickness of 0.3 µm or less to a substantially planar electrode layer, an organic field-effect transistor can be made having a channel length down to 2 µm, satisfying the condition for voltage amplification at voltages well below 10 V, and having an on/off ratio of about 25.

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Inventors:

MUTSAERS CORNELIS MARCUS JOHAN (DE)
DE LEEUW DAGOBERT MICHEL (NL)
DRURY CHRISTOPHER JOHN (NL)

Application Number:

PCT/IB1998/001144

Publication Date:

May 26, 2006

Filing Date:

July 27, 1998

Export Citation:

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Assignee:

KONINKL PHILIPS ELECTRONICS NV (NL)
PHILIPS SVENSKA AB (SE)

International Classes:

H01L29/786; H01L51/00; H01L51/10; H01L51/05; H01L51/30; H01L51/40; (IPC1-7): H01L51/00; H01L21/312; H01L21/47

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