sp3 BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF

WIPO Patent Application WO/2005/022578

A1

A method for preparing an sp³ bonding boron nitride film exhibits excellent electric field electron emission characteristics which comprises introducing a reaction gas containing a boron source and a nitrogen source into a reaction vessel, adjusting the temperature of a substrate to the range of room temperature to 1300°C, and irradiating the substrate with an ultraviolet light with or without the generation of a plasma, to thereby form a surface structure excellent in electric field electron emission characteristics on the substrate by a reaction from the vapor phase in a self-forming manner. The film prepared by the above method is a material which, in addition to the above characteristics, has high resistance to electric field strength, can emit electrons with a great current density, and is free from the deterioration thereof.

KOMATSU SHOJIRO (JP)
MORIYOSHI YUSUKE (JP)
SHIMIZU YOSHIKI (JP)
OKADA KATSUYUKI (JP)

PCT/JP2004/012775

March 10, 2005

August 27, 2004

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NAT INST FOR MATERIALS SCIENCE (JP)
KOMATSU SHOJIRO (JP)
MORIYOSHI YUSUKE (JP)
SHIMIZU YOSHIKI (JP)
OKADA KATSUYUKI (JP)

C23C16/34; C23C16/38; C23C16/48; H01J1/304; C01B21/064; H01J9/02; (IPC1-7): H01J1/304; H01J9/02; C23C16/38; C01B21/064

JPH06316402A	1994-11-15
JP2002100281A	2002-04-05
JP2001351506A	2001-12-21
JPH101304A	1998-01-06
JP2002352694A	2002-12-06

See also references of EP 1670015A4
None

Moritake, Yoshiaki (Kita-yaesu Bldg. 3rd Floor 2-11, Nihonbashi 3-chom, Chuo-ku Tokyo, JP)

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