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JP6762206B2 |
To provide a molten metal holding device capable of preventing the sticking solidification of a molten substance to the inner wall of a crucible caused by molten metal scattering, also easy in the exchange of a heater, and reduced in the...
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JP6750550B2 |
To provide a crystal growth apparatus capable of efficiently preventing the raw material of a crucible bottom from being solidified accompanying a long size of a crystal body to be grown in an apparatus for growing a single crystal by th...
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JP6748309B2 |
A metal oxide barrier and a connecting method for solving the problems in which sectors of an existing cold crucible are connected by means of a mica plate and the mica plate is damaged due to arcing and the like and in which the sectors...
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JP2020121891A |
To provide an impregnation crucible which has improved use life.A method for manufacturing an impregnation crucible includes: a depressurization step (A) of putting a reduced and fired crucible material 10 into an empty impregnation tank...
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JP2020121892A |
To provide an impregnation crucible which has improved use life.A method for manufacturing an impregnation crucible includes: a depressurization step (A) of putting a reduced and fired crucible material 10 into an empty impregnation tank...
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JP2020121890A |
To provide an impregnation crucible which has improved use life.A method for manufacturing an impregnation crucible includes: a depressurization step (A) of putting a reduced and fired crucible material 10 into an empty impregnation tank...
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JP6736162B2 |
To provide a graphite crucible capable of efficiently melting-holding the raw material of a casting in casting, and a melting-holding furnace using the same.Provided is a graphite crucible comprising: a crucible furnace melting the raw m...
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JP6729484B2 |
To suppress reduction of oxygen concentration at a periphery of a silicon single crystal and thus to enhance uniformity of in-plane distribution of oxygen concentration in a production method of the silicon single crystal by a HMCZ proce...
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JP6729257B2 |
To provide an operation method of a high-frequency output, which stabilizes a crucible bottom temperature to a target temperature, when an oxide single crystal is raised by a rotation Czochralski method.The operation method of the high-f...
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JP6726617B2 |
The present invention addresses the problem of providing a heating furnace that sufficiently exhibits the microwave effect produced by microwave heating and allows economical heating taking advantage of the characteristics of each heatin...
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JP6719718B2 |
To provide a manufacturing method of a Si ingot crystal capable of obtaining a Si ingot crystal having various shapes having low strain, low dislocation or low oxygen concentration; and to provide a manufacturing apparatus of the Si ingo...
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JP2020085389A |
To provide a cold crucible structure in which melting efficiency and energy can be improved together with mechanical/thermal stability.A cold crucible structure 10 comprises: a cold crucible part 100 including an upper cap and a lower ca...
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JP6702249B2 |
To provide a production method of an oxide single crystal capable of suppressing generation of a void.In a production method of an oxide single crystal for rearing a single crystal of oxide from a melt of an oxide raw material in a cruci...
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JP6674881B2 |
To provide an Ir alloy crucible that not only has been improved in high-temperature strength, but also resists plastic deformation at high temperature, with an amount of use of Pt reduced for low-cost production.A crucible is composed of...
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JP6660851B2 |
To melt an aluminum material in a state preventing the formation of an oxide film as much as possible and improving thermal energy efficiency while minimizing and simplifying the apparatus itself.A superheated steam generating part inclu...
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JP6659366B2 |
This metal melting device is provided with a crucible 20 for storing molten metal therein, a stirring part 30 for stirring the molten metal in the crucible 20, and a heating part 40 for heating the crucible 20. The stirring part 30 inclu...
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JP2020030012A |
To effectively replace the lining material of an induction furnace without requiring troublesome preparation before the replacement work.A replacement method of a lining material attached to the inside of an induction furnace, according ...
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JP6655265B2 |
To provide a manufacturing method of a MgSiSncrystal, the manufacturing method being capable of recycling a crucible and growing the MgSiSncrystal having a good crystallinity with no bubble at all, and a manufacturing apparatus.A manufac...
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JP6655587B2 |
A process for producing high-purity magnesium by means of distillation at reduced pressure, characterized in that, the high-purity magnesium condenses in the liquid state, whereby the starting material in the form of a magnesium-containi...
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JP2020026367A |
To provide a manufacturing apparatus of a silicon carbide single crystal capable of suppressing cracks of a membrane containing a metal carbide formed on the inner surface of a crucible.A manufacturing apparatus of a silicon carbide sing...
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JP6629886B2 |
Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration and contains only ...
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JP6620411B2 |
This glass article production device 11 comprises a glass melting furnace containing a first melting furnace 12 and a second melting furnace 13, and a first flow path 14 for sending molten glass MG from a flow-out portion 12a of the firs...
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JP6617680B2 |
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JP2019534937A |
The present disclosure relates to crucibles, vapor deposition equipment and vapor deposition systems. The crucible includes a storage chamber for storing the material to be heated, the crucible further includes a collector located in the...
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JP2019202923A |
To provide a crystal growth apparatus introduced at a low cost, having durability and capable of substantially reducing growth cost by lengthening a growing crystal while maintaining a stable yield.The crystal growth apparatus comprises ...
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JP6610529B2 |
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JP6611000B2 |
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JP6607390B2 |
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JP6597526B2 |
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JP2019186132A |
To suppress exposure of a molten metal.An induction heating dissolution device 1 comprises: a crucible 11 in which an inner space 23 is formed by a side wall 21 and a bottom wall 22; a melting coil 12 for melting a melted material 101 pu...
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JP6578139B2 |
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JP2019152413A |
To provide a processed object input device capable of suppressing melt from scattering when inputting a processed object into the melt.A processed object input device 1 for inputting a processed object from the outside into a processing ...
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JP2019152414A |
To provide a processed object input device capable of suppressing melt from scattering when inputting a large processed object into the melt.A processed object input device 1 for inputting a processed object from the outside into a proce...
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JP2019147698A |
To provide an apparatus and method for growing a crystal, capable of reducing rapid change in growth rate caused by temperature fluctuation in an electric furnace especially in the growth of a straight body part during crystal growth to ...
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JP2019123645A |
To provide a graphite heater for manufacturing a single crystal, capable of uniformizing temperature distribution in the circumferential direction of the heater compared with a conventional heater and reducing the occurrence frequency of...
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JP2019090093A |
To recover impurity removal performance by dissolving and removing impurities that block a surface of an impurity capture part in a liquid metal purification apparatus.A liquid metal purification apparatus captures impurities by using te...
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JP3221223U |
To significantly improve production efficiency by not requiring coating of a special material having excellent corrosion resistance, and to maintain oxidation resistance equivalent to that of a normal graphite crucible, while suppressing...
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JP2019052067A |
To provide a single crystal growth apparatus that can keep axial symmetry of temperature distribution in a crucible and improve a life of a refractory box arranged around the crucible.A single crystal growth apparatus 10 for growing an o...
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JP6486856B2 |
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JP6473587B2 |
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JP6473455B2 |
A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positione...
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JP6452182B2 |
The present invention provides an aluminum chip melting apparatus that melts chips, which are aluminum metal or alloy cuttings, to obtain molten aluminum. This aluminum chip melting apparatus is characterized by being provided with: a ce...
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JP2018204820A |
To provide a graphite crucible used for refining a non-ferrous molten metal in which oxidative consumption caused by direct fire heating is prevented.The outer fence of a graphite crucible body is covered with a metal plate having heat r...
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JP6438007B2 |
An electromagnetic induction furnace which is intended to melt at least one electrically conductive material, such as an oxide and/or a metal, and which includes at least one inductor having at least one turn and at least one cooling cir...
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JP2018193277A |
To provide a crystal growth apparatus low in cost, having a high nondefective rate and capable of corresponding to a long-sized crystal to be grown.The crystal growth apparatus comprises: a metal crucible capable of holding a raw materia...
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JP6431267B2 |
To detect molten metal leakage by a simple configuration.A molten metal detector of this invention is installed at a melting furnace constituted in such a way that metal 1 in a crucible 2 is induction heated and molten by a heating coil ...
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JP2018530500A |
It is a device for pulling out a crystal sheet from a melt. The device is a crucible configured to include the melt and having a dam structure, wherein the melt comprises a crucible having an exposed surface having a level defined by the...
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JP6403693B2 |
The melting induction furnace comprises, together with a casing (7) to which a lower sole plate (11) is added to form the central part of the structure, a removable inner crucible (1) composed of an internal layer (4) resisting heat and ...
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JP6397834B2 |
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JP2018135228A |
To provide a method for growing a LiTaOsingle crystal, using a LiTaOcrystal raw material (melting point of 1650°C) having a congruent composition and a platinum crucible (melting point of 1760°C), having melting points close to each ot...
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