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WO/2004/072186A1 |
Multilayered magnetic pigment flakes and foils are provided. The pigment flakes can have a stacked layer structure on opposing sides of a magnetic core, or can be formed as an encapsulant structure with encapsulating layers around the ma...
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WO/2004/069767A1 |
Method for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with Manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature...
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WO/2004/068607A1 |
A CPP-type giant magnetoresistance effect element and a magnetic component and a magnetic device capable of delivering a giant magnetoresistance effect by a film-surface-vertical-direction spin-dependent current, the CPP-type giant magne...
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WO/2004/068515A1 |
A soft magnetic member comprising resin film (11) and, superimposed thereon, a soft magnetic layer, wherein the soft magnetic layer is composed of T-L (in which T is Fe or FeCo, and L is at least one element selected from among C, B and ...
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WO/2004/067813A1 |
Substrate (2) for forming a magnetic garnet single-crystal film, which substrate is used to effect a liquid phase epitaxial growth of thick magnetic garnet single-crystal film being free from crystal defects, warpage, cracking, peeling, ...
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WO/2004/066407A1 |
Magnetic tunnel junction devices can be fabricated using a two-step deposition process wherein respective portions of the magnetic tunnel junction stack are defined independently of one another.
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WO/2004/066322A2 |
The invention relates to an antenna core that comprises a flexible stack of a plurality of oblong soft-magnetic strips (1) consisting of an amorphous or nanocrystalline alloy. The strips of said antenna core are separated from one anothe...
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WO/2004/066438A1 |
The aim of the invention is to create a highly bendable antenna core (8) which is highly bendable for high-frequency identification systems and which substantially retains its soft-magnetic properties when bending occurs. Said aim is ach...
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WO/2004/064048A2 |
A soft magnetic undercoat film, a first undercoat film, a second undercoat film, a perpendicular magnetic recording film, and a protective film are provided on a non-magnetic substrate, and the first undercoat film consists of Pt, Pd, or...
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WO/2004/061467A1 |
A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices (5) such as a magnetoresistive memory cell includes two ferromagnetic layers (45,55) and an antiferromagnetic coup...
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WO/2004/061876A1 |
A granular substance (1) having a soft magnetic characteristic. The granular substance (1) contains a matrix (3) of a nonmagnetic insulating organic material and ferromagnetic metallic particles (2) dispersed in the matrix (3) and having...
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WO/2004/059755A1 |
A CPP (Current Perpendicular to Plane) magnetoresistive device comprises a GMR film (20) having such a structure where a magnetic intermediate layer (30) and an oxidized insulating layer (31) are formed between a fixed magnetization laye...
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WO/2004/059745A1 |
A magnetic switching device having a structure that is totally different from conventional ones and an improved energy conversion efficiency for changing the magnetization state of a magnetic body, and a magnetic memory using such a magn...
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WO2003107350B1 |
A magnetoresistive tunneling junction memory cell (10) comprising a pinned ferromagnetic region (17) having a magnetic moment vector (47) fixed in a preferred direction in the absence of an applied magnetic field wherein the pinned ferro...
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WO/2004/059668A1 |
Magnetic thin film for high frequencies (1) simultaneously exhibiting high magnetic permeability and high saturation magnetization can be obtained by a combination of T-L composition layers (5) constituted of T-L (in which T is Fe or FeC...
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WO/2004/055906A1 |
A spin injection device capable of spin injection magnetization reverse with a small current density, a magnetic device using it, and a magnetic thin film used in these. The spin injection device (14) includes: a spin injection section (...
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WO/2004/055784A1 |
A magnetic thin film having a high Bs (saturation magnetic flux density) not lower than 2.2 T and formed into a flat surface having a surface roughness not greater than 5 nm which can preferably be used for a light head. A magnetic head ...
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WO/2004/055914A1 |
A magnetoresistive device comprises an antiferromagnetic layer (5), a fixed ferromagnetic layer (20), a tunnel insulating layer (9) and a free ferromagnetic layer (21). The fixed ferromagnetic layer (20) is joined to the antiferromagneti...
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WO/2004/053490A1 |
A coated magnetic particle comprising an optionally porous magnetic polymer particle of a matrix polymer, said polymer particle having on a surface and/or in the pores thereof superparamagnetic crystals, said coated particle having a coa...
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WO2004032120B1 |
A magnetic storage media (18, 38) comprises a substrate (20, 40) supporting the layer of magnetic media ( 28, 48) having a tilted C-axis greater than approximately 25° with respect to surface normal and having a magnetic easy axis tilte...
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WO/2004/042735A1 |
A method for manufacturing a magnetoresistive random access memory (MRAM) cell is disclosed, which alleviates the problem of Neel coupling caused by roughness in the interface between the tunnel junction layer and the magnetic layers. Th...
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WO/2004/042752A1 |
The invention relates to a Method for producing iron garnet based ferromagnetic material, having the general Formula (I) &lcub Re3-x-yFex3+ Ay&rcub [Fe23+](Fe3-Z3+Bz)O12 (I) wherein Re is one or more selected from the group of elements c...
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WO/2004/040665A2 |
A method for fabricating a magnetoresistive device (100) having at least one active region (210), which may be formed into a magnetic memory bit, sensor element and/or other device, is provided. In forming the magnetoresistive device (10...
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WO/2004/034385A1 |
Insular magnetic grains (32) are surrounded by a first separation layer (33). Insular magnetic grains (36, 38) are formed on crystal layers (35, 41). The crystal layers (35, 41) function to arrange the orientation of the magnetic grains ...
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WO/2004/034382A1 |
A magnetoresistance effect film (44) spreads along a reference surface (43) crossing a medium facing surface. A non-magnetic element (47) spreading along the reference surface (43) is adjacent to the magnetoresistance effect film (44). A...
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WO/2004/032157A1 |
A system and method of reducing noise due to thermally activated spin waves in a magnetoresistive (MR) element 30 is disclosed. The MR element 30 includes a free layer 32, a reference layer 36, and a spacer layer 34, the spacer layer 34 ...
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WO/2004/030114A1 |
A magnetoresistive device utilizing the TMR effect has an improved heat resistance and a weakened Neel effect. The magnetoresistive device comprises a first ferromagnetic layer made of a ferromagnetic material, a nonmagnetic insulative t...
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WO/2004/029973A2 |
A method and system for providing a magnetic element (120) capable of being written using spin-transfer effect while being thermally stable and a magnetic memory using the magnetic element (120) disclosed. The magnetic element (120) incl...
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WO/2004/028002A2 |
A spin driven resistor comprising a magnetic body whose resistance increases due to resonance when subjected to an externally applied magnetic field while in the presence of an externally applied electromagnetic field is presented. The s...
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WO/2004/025745A1 |
A magnetoresistance effect element comprising a metal artificial lattice film (4) consisting of at least two layers of magnetic thin film and metal non-magnetic thin film alternately laminated on part of a substrate (1) and being formed ...
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WO/2004/024836A2 |
Diffractive pigment flakes are selectively aligned to form an image. In one embodiment, flakes having a magnetic layer are shaped to facilitate alignment in a magnetic field. In another embodiment, the flakes include a magnetically disco...
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WO/2004/025744A1 |
A magnetism−sensitive element in which an insulation film sandwiched by two ferromagnetic films at a ferromagnetic tunnel junction is formed of an aluminum nitride film and a barrier at the ferromagnetic tunnel junction is set not high...
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WO/2004/021372A1 |
An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an ...
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WO/2004/017085A1 |
Disclosed is a magnetoresistive layer system (5), wherein a layer arrangement (15) is provided in the vicinity of a magnetoresistive layer stack (14), particularly one working on the basis of the GMR or AMR effect. Said layer arrangement...
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WO/2004/013861A2 |
A method and system for providing a magnetic element (100) capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element (100) are disclosed. The magnetic eleme...
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WO/2004/013919A1 |
A magnetoresistance effect element having good magnetic characteristics by preventing a deterioration, by heat treating, in a reluctance change rate, and a magnetic memory unit provided with this magnetoresistance effect element to provi...
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WO/2004/011387A1 |
The present invention discloses an method of producing ferrite magnet from layered precursor; firstly introducing Fe?2+¿ into hydrotalcite layered plate and obtaining Me-Fe?21¿ -Fe?3+¿ layered compound LDH, secondly oxiding Fe?2+¿ in...
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WO/2004/010442A1 |
The invention relates to a solid material which is characterised in that the electrons of the conduction band are almost completely polarised in the selected orbital. The invention also relates to the method of obtaining said material. T...
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WO/2004/010443A1 |
An enhanced giant magnetorestistive device, and a method of manufacturing the same. Accoding to an exemplary embodiment, the enhanced giant magnetoresistive GMR) device include a plurality of layers of magnetic, non-magnetic conducting, ...
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WO/2004/006335A1 |
There is provided a technique to more effectively reduce the MRAM memory cell offset magnetic field. An MRAM includes a free layer (11) having reversible free spontaneous magnetization, a fixed layer (6) having fixed spontaneous magnetiz...
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WO/2004/003945A1 |
A self-organized magnetic array includes a plurality of magnetic primary nanoparticles (122) are arranged on the substrate (152) in a self-organized magnetic array. A plurality of magnetic interstitial nanoparticles (170) are positioned ...
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WO/2004/001779A1 |
A method of fabricating anisotropic magnetic films includes providing a substrate (18), sputtering a layer (24) of NixFey (where x ranges from 40 to 50 and y = (100−x)) onto a surface (28) of the substrate, and subjecting the layer of ...
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WO/2004/001872A1 |
A magnetoresistive device having a favorable magnetic characteristic, and a magnetic memory device comprising this magnetoresistive device and having an excellent write/read characteristic are disclosed. A pair of ferromagnetic layer (ma...
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WO/2003/107424A1 |
A new type of magnetoresistive random-access memory (MRAM) device realized by the rectification effect by a p-i-n low-resistance tunneling magnetoresistive (low-resistance TMR) diode having a structure in which at least one nonmagnetic i...
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WO/2003/105129A1 |
A magnetic material structure (130) is provided according to the present invention that is capable of being lithographically patterned for various uses, such as, but not limited to, magnetic read/write devices. The magnetic material stru...
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WO/2003/105163A1 |
A magnetic structure (130, 130’, 130’’) including a first layer of hard magnetic material (132) which has a magnetization that is substantially fixed in a first magnetization direction, a second layer of ferromagnetic material (136...
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WO2003083910B1 |
Magnetic tunneling junction devices (MTJ) useful for sensing and memory applications and characterized by reduced resistance, magnetic noise, increased sensitivity, and increased magnetoresistance are disclosed herein. A method for fabri...
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WO/2003/104830A1 |
A perpendicular exchange biased device (10) comprises a layer of buffer material (14) on a surface of a substrate (12), a layer offerromagnetic material (18) on a surface of the buffer layer, wherein the magnetization of the ferromagneti...
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WO/2003/100877A1 |
A magnetoresistance effect device (1) comprising a semiconductor region (2) having a surface with a large number of separate metal particles (3) of not more than 100 µm in size provided thereon, a semiconductor or semi−metal cap layer...
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WO/2003/096359A1 |
A soft magnetic material of high saturation magnetic flux density comprising a laminate of a noncrystalline substratum film constituted of a soft magnetic material and a film of a composition represented by the formula (FexCo1-x)y(M)1-y ...
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