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WO/2003/000490A2 |
A bitumen film containing magnetic powder is heated prior to magnetisation to a temperature enabling the magnetic powder particles to be orientated according to the effect of the magnetic field. The bitumen film is sufficiently cooled af...
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WO/2002/101750A2 |
The invention relates to a digital magnetic storage cell device for reading and/or writing operations that comprises a soft magnetic reading and/or writing layer system and at least one hard magnetic reference layer system. This referenc...
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WO/2002/101406A1 |
A magneto-resistive layer arrangement (5) with a layer sequence (16), comprising at least two magnetic layers (12, 12') is disclosed, between which a non-magnetic electrically conducting intermediate layer (13) is arranged, whereby the e...
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WO/2002/099906A1 |
A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non−magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second f...
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WO/2002/099451A2 |
The semi-finished article for obtaining a sensor for measuring a magnetic field comprises a substrate (1) and a first magnetic element (2), a second magnetic element (3), a third magnetic element (4), and a fourth magnetic element (5) in...
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WO/2002/099905A1 |
A tunnel magnetoresistance element which increases a degree of spin polarization to obtain a larger magnetoresistance effect by varying only the film thickness of an existing substance excellent in magnetic characteristics without varyin...
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WO/2002/095434A1 |
The invention relates to method of producing magnetic sensors based on ballistic magnetoresistance using pinhole multilayer systems. The multilayers used can take the form of a combination of layers of materials having different conducti...
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WO/2002/093661A1 |
In a tunnel magnetoresistive (TMR) element, the MR ratio is improved and fluctuation of resistance is suppressed. In an example of TMR element, a surface control layer which is an amorphous conductor, for example, is provided between a s...
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WO/2002/088765A1 |
The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M¿100-a?X¿a?. Here, M is at...
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WO/2002/084647A2 |
The invention is used in the field of materials engineering and relates to antiferromagnetic layer systems as well as to methods for magnetically storing data that can be used, for example, in computer hard disks. The aim of the inventio...
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WO/2002/084680A1 |
The invention is used in the field of materials engineering and relates to a method for defining reference magnetizations in layer systems that could be used, for example, in magnetic sensor technology components. The aim of the inventio...
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WO/2002/078100A1 |
A transpinnor switch is described having a network of thin-film elements in a bridge configuration, selected ones of the thin-film elements exhibiting giant magnetoresistance. The switch also includes at least one input conductor (1202) ...
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WO/2002/077657A1 |
A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu or an alloy thereof and interposed between the magnetic layer and the specular layer, an...
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WO/2002/078057A2 |
A sample-and-hold circuit(1200) is described which includes a network of thin-film elements (1210) in a bridge configuration. Each of the thin-film elements (1210) exhibits giant magnetoresistance. The circuit (1200) also includes a plur...
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WO/2002/078021A1 |
A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or an alloy thereof and interposed between the magnetic layer and th...
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WO/2002/073250A2 |
The invention discloses magnetic OVP, said pigment consisting of thin-layer flakes having a basic metal-dielectric-metal structure to result in a viewing-angle dependent color appearance, and having, in addition to said viewing-angle dep...
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WO/2002/073226A2 |
Magnetic tunnel junction (MTJ) and charge perpendicular-to-plane (CPP) magnetic sensors are disclosed which have a first antiferromagnetic layer for pinning the magnetization direction in a pinned layer and a second antiferromagnetic lay...
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WO/2002/069359A2 |
A magnetoelectronics element (40) is provided that is comprised of a first magnetic layer (42), a first tunnel barrier layer (44) on the first magnetic layer (42), a second magnetic layer (46) on the first tunnel barrier layer (44) and a...
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WO/2002/065489A2 |
The invention relates to a magnetically sensitive layer array (10, 20) with improved temperature and long-term stability for use in an GMR sensor element. Said array has at least two superimposed magnetic layers (14, 16, 18), a non-magne...
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WO/2002/058166A1 |
A magnetic storage element comprising a magnetoresistance element, a conductor for generating a magnetic flux to change the resistance of the element, and at least one ferromagmetic element through which this magnetic flux passes, wherei...
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WO/2002/058167A1 |
A spin switch driven under a voltage, comprising a ferromagnetic element, a magnetic semiconductor magnetically coupled with the element, an antiferromagnetic element magnetically coupled with the magnetic semiconductor, and an electrode...
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WO/2002/058086A1 |
A thin magnetic film utilizing a granular film to provide excellent high frequency characteristics and a method of manufacturing the magnetic film, a laminated magnetic film, and a magnetic part and an electronic device utilizing the lam...
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WO/2002/054389A2 |
A spin valve sensor (400) is provided with a negative ferromagnetic coupling field -HFC for properly biasing a free layer and a spin filter (302) layer is employed between the free layer (222) and a capping layer for increasing the magne...
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WO/2002/052658A1 |
A Cu film serving as the non-magnetic layer of a spin valve film is formed on a substrate in a sputter film forming chamber in which a film is formed by sputtering under a reduced pressure, a substrate is exposed to a gas atmosphere in a...
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WO/2002/050924A1 |
A magnetoresistive device is formed of a compound laminate in which a TMR element and a SVMR element share a free magnetism layer, and the laminate includes a first antiferromagnetic layer, a first fixed magnetic layer, an insulating tun...
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WO/2002/047182A1 |
A magnetoresistance effect device comprising a magnetoresistance effect device body (11) formed of a multilayer structure part comprising a free layer having rotating magnetization with respect to at least an external magnetic field, a f...
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WO/2002/045167A2 |
Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided ...
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WO/2002/043164A1 |
An MR device manufacturing method comprising a film-forming step of forming a multilayer film including an antiferromagnetic layer (4), a fixing layer (3), and a spacer layer (5), a first patterning step of patterning the multilayer film...
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WO/2002/042214A1 |
A novel thin film of Y-type hexagonal ferrite for a high frequency device having the c-axis of its crystal being oriented perpendicular to the surface of the film; and a method for preparing the thin film which comprises providing a visc...
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WO/2002/039511A1 |
A CPP structure of a GMR element, which has a laminate structure unite (10) by a spin valve structure formed by laminating a free layer (1) having its magnetization rotated in response to an external magnetic field, a fixed layer (3), an...
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WO/2002/039512A1 |
A spindle valve type giant magnetic resistance effect element or a tunnel type magnetic resistance effect element, comprising a laminated structure part at least having a free layer (4) formed of a soft magnetic material having a magneti...
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WO/2002/035611A2 |
A unipolar spin diode and a unipolar spin transistor. In one embodiment, the unipolar spin diode (100) includes a first semiconductor region (101) having a conductivity type and a spin polarization, and a second semiconductor region havi...
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WO/2002/035715A2 |
This invention relates to organic based spintronic devices, and electronic devices comprising them, including spin valves, spin tunnel junctions, spin transistors and spin light-emitting devices. New polymer-, organic- and molecular- bas...
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WO/2002/035559A2 |
A magnetic layer (46) of a magnetoelectronics element (40) is provided that has a first sub-element layer (48) and a second sub-element layer (50). The first sub-element layer (48) is configured to have a first area and the second sub-el...
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WO/2002/033715A1 |
A method for producing a magnetic thin film by which an iron carbide or iron carbide-cobalt film the main phase of which is an a'-phase is formed stably without being influenced by the temperature of the deposit surface where the thin fi...
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WO/2002/033713A1 |
A ferromagnetic pinned layer (1) kept at a fixed magnetic orientation by a pinning layer (4) is separated from a ferromagnetic free layer (3) by a Mott insulator coupling layer (2). A controllable voltage source (5) is connected between ...
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WO/2002/029911A2 |
A TMR material (40) is provided having a substantially smooth and continuous ultra-thin magnetic layer. The TMR material is provided with a first tunnel barrier layer (46) is formed on a first magnetic layer (42) and a second magnetic la...
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WO/2002/025749A2 |
The invention relates to a method for producing a new generation of giant magnetoresistance (GMR) sensors and tunnel magnetoresistance (TMR) sensors. According to the invention, a thin-film fixing layer is produced, for example, from a 5...
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WO/2002/023564A1 |
The invention relates to a method of manufacturing a spin valve structure (1) of the GMR-type. Such a structure includes a stack of a magnetic layer (11a 11b), a non-magnetic layer (15) and a sense layer (17) of a ferromagnetic material....
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WO/2002/021545A1 |
The invention relates to an element, comprising a substrate with a surface roughness of less than 5 nm, with saturated bonds on the surface and an MPt¿3? film applied to at least one side of the substrate, with a magnetic anisotropy per...
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WO/2002/018668A1 |
A photocatalyst having a high catalyst ability, a semiconductor material having optical, electrical, and magnetic functions, and a titanium dioxide cobalt magnetic film useful for a transparent magnet are disclosed. The titanium dioxide ...
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WO/2002/019352A1 |
A magnetic semiconductor material which comprises CdMnGeP¿2? and has magnetization characteristics at room temperature is prepared by placing a CdGeP¿2? single crystal (2) in a molecular beam epitaxy apparatus (1) and maintaining the t...
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WO/2002/015206A1 |
A thin film rare earth permanent magnet capable of making the thin film by vapor growth anisotropic ina lamination direction, and a method for manufacturing the permanent magnet. There are repeated a number of operations to form atomic l...
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WO/2002/009126A2 |
A high GMR spin valve structure having multiple layers of a ferromagnetic material (26,30) and a conductive non-magnetic material (28) can be monolithically integrated with silicon circuits (50) by first growing an accommodating buffer l...
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WO/2002/009158A2 |
High quality epitaxial layers of ferromagnetic materials can be grown overlying large silicon wafers (22) by first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystallin...
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WO/2002/009098A1 |
A laminated magnetic recording medium for data storage uses a magnetic recording layer having at least two antiferromagnetically-coupled (AFC) layers spaced apart by a nonferromagnetic spacer layer. Each AFC layer is formed as two ferrom...
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WO/2002/005318A2 |
A multi-layered memory cell (902) is described having a plurality of magnetic layers (904, 905), each of the magnetic layers being for magneticallystoring one bit of information. A plurality of access lines are integrated with the plural...
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WO/2002/005299A1 |
A method of producing a structure comprising a plurality of nanoparticles distributed across a surface of a substrate in a predetermined array. The method comprises the steps of: i) providing a substrate which has a passivated surface; i...
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WO/2002/005268A2 |
A memory device (100) is described which includes memory cells (102), access lines, and support electronics (104, 106, 108, 110) for facilitating access to information stored in the memory cells via the access lines. Both the memory cell...
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WO/2002/003481A1 |
The invention relates to a three-port component comprising an emitter (1), a collector (2) and a base (3). Said component is characterised in that the collector (2) and the base (3) are ferromagnetic layers between which a tunnel insulat...
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