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Matches 1 - 50 out of 12,119

Document Document Title
WO/2021/066743A1
A spin-orbit torque device 100 is described. In an embodiment, the spin-orbit torque device 100 comprises: a functionally graded magnetic layer 104, the functionally graded magnetic layer 104 having a switchable magnetisation direction a...  
WO/2021/060928A1
A multilayer inductor is disclosed. The disclosed multilayer inductor comprises: a multilayer winding part comprising a plurality of vertically stacked coil layers and comprising an inner surface defining a hollow of the plurality of coi...  
WO/2021/050452A1
In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allow anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having...  
WO/2021/019575A1
The present disclosure relates to a method for locomotion of at least one nanorobot through a biochemical environment. The present disclosure also reveals a method for locomotion of nanorobots for use in drug delivery, delivery of materi...  
WO/2021/014760A1
Provided is a sputtering target member having excellent economy and being useful for the formation of non-magnetic layers have an hcp structure and constituting vertical magnetic recording media. This sputtering target member for non-mag...  
WO/2021/002115A1
[Problem] To provide a random number generating unit and a computing system using the same, the random number generating unit comprising a magnetic tunnel junction element and enabling development of characteristics required for executio...  
WO/2020/252159A1
Also disclosed herein is an article having a substrate and a layer of an FeRh alloy disposed on the substrate. The alloy has a continuous antiferromagnetic phase and one or more discrete phases smaller in area than the continuous phase h...  
WO/2020/223532A1
A magnetic tunnel junction is provided. The magnetic tunnel junction comprises an insulating tunnel barrier and a fixed ferromagnet layer adjacent the tunnel barrier. The fixed ferromagnet comprises a fixed magnetization along an easy ax...  
WO/2020/216627A1
A molecular magnetic material comprising salt molecules of a hexsacyanide tungsten anion complex of the formula: [WIV(CN)6(NN)]2-, a hexsacyanide tungsten anion complex of the formula: [WV(CN)6(NN)]-, wherein: W is a tungsten cation, CN ...  
WO/2020/191327A1
Embodiments generally relate to subwavelength antennas and, more particularly, extreme subwavelength antennas with high radiation efficiency. One embodiment and its derivatives achieve the objective of an extreme subwavelength dual acous...  
WO/2020/176154A1
A system for generating random noise includes a nanoscale magnetic device with two free ferromagnetic layers separated by a non-magnetic spacer layer. A current source directs a high current perpendicularly through the layers. The magnet...  
WO/2020/166141A1
Provided are a magnetic laminated film that is capable of improving write efficiency, and a magnetic memory element and magnetic memory that use the magnetic laminated film. The magnetic laminated film 1 is a laminated film for a magneti...  
WO/2020/161814A1
This spin-orbit torque-type magnetization rotating element (100) of the present application comprises: a first ferromagnetic layer (10); and a spin-orbit torque wiring (20) facing the first ferromagnetic layer and extending in a first di...  
WO/2020/158323A1
Provided is a magnetoresistance effect element comprising a first electrode (10), a fixed magnetic layer (120) in which the magnetization direction is fixed, a first insulating layer (130), a free magnetic layer (140) in which the magnet...  
WO/2020/160358A1
Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the firs...  
WO/2020/137558A1
The present invention provides an exchange coupling film (10) in which a magnetic field (Hex) is high, the magnetic field being such that the orientation of magnetism of a fixed magnetic layer is reversed, and which has exceptional ferro...  
WO/2020/128018A1
A MEMS system comprises a first permanent-magnetic microstructure (10) and a second permanent-magnetic microstructure (15). The first permanent-magnetic microstructure (10) is movable in a first direction (IOv). The second permanent-magn...  
WO/2020/110899A1
A Co-based amorphous magnetic thin strip (1) for a magnetic sensor is made of a Co-based amorphous magnetic thin strip having a width W of 1 mm or less, a length L of 6-100 mm inclusive, an L/W ratio of 20-1000 inclusive, a strip thickne...  
WO/2020/110360A1
The purpose of the present invention is to provide: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device, each of w...  
WO/2020/110893A1
Provided is a magnetic alloy material which comprises metallic elements as main components and has a higher spin moment than iron-cobalt alloys. The magnetic alloy material is characterized by comprising iron and cobalt as main component...  
WO/2020/101998A1
A multilayer film (10) includes a substrate (12); a first magnetic layer (14) disposed on the substrate and a second magnetic layer (16) disposed on the first magnetic layer (14). The first magnetic layer (14) includes Fe(50-80)N(10-20)B...  
WO/2020/099846A1
A magnetic particle (30, 70) has a layered structure (6, 56) between a top surface of the particle and an opposed bottom surface of the particle. Layers of the structure include one or more nonmagnetic layer(s) and one or more magnetized...  
WO/2020/095360A1
This domain wall motion type magnetic recording element (100) is provided with: a domain wall motion layer (10) in which first layers (11) that contain a rare earth metal and second layers (12) that contain a transition metal are alterna...  
WO/2020/090719A1
A spin torque generating element 10 comprises: a conductive layer 1 supplied with a current Jc; an insulating layer 2 formed on a surface on one side of the conductive layer 1; and a ferromagnetic layer 3 formed on a surface on the other...  
WO/2020/090914A1
Provided is a CoPt-oxide-based in-plane magnetized film which has a magnetic coercive force Hc of 2.00 kOe or more and has remanent magnetization Mrt per unit area of 2.00 memu/cm2 or more. An in-plane magnetized film (10) for use as a h...  
WO/2020/087062A1
In some examples, a patterned magnetic core includes a first sub- score and at least one second sub-core. The first and second sub-cores are spaced apart by a gap, optionally filled with material of sufficiently low electrical conductivi...  
WO/2020/084157A1
The present invention relates to a heavy-metal-, rare-earth-element- and iron-free ferromagnetic electrical insulator thin film material transparent to visible light. The thin film material possesses a formula Αι+nxΤz1-xO3, where A is...  
WO/2020/066826A1
This sputtering target has (100-x)MgO-xCuO(0
WO/2020/059542A1
Provided are a skyrmion circuit and a manufacturing method for a skyrmion circuit. This skyrmion circuit (1) includes a magnetic film (10) patterned with a circuit part (1A) in which skyrmions can exist, in which the skyrmions are propag...  
WO/2020/060035A1
The present invention relates to a magnetic field shielding sheet, a method for producing a magnetic field shielding sheet, and an antenna module using same, wherein the magnetic field shielding sheet is in the form of a roll and may pro...  
WO/2020/045655A1
Provided is a magnetoresistance effect element provided with a quadruple interface, the magnetoresistance effect element having a small resistance-area product RA, a large magnetoresistance ratio, and a large effective magnetic anisotrop...  
WO/2020/040082A1
The present invention addresses the problem of providing a Co-based alloy with which it is possible to produce a target exhibiting excellent toughness and to obtain a soft magnetic layer having a low saturation magnetic flux density. Wit...  
WO/2020/041582A1
Fabrication of a magnetoresistive device, comprising a magnetically fixed region (40) on at least one seed region (20, 25) on an electrically conductive region (15), involves forming a seed region (20'; 21), treating the seed region by e...  
WO/2020/040264A1
A Hall element (100) is provided with: a substrate (1); and a thin film (2) that serves as a magnetism sensing layer and that is provided on the substrate (1). The thin film (2) is formed from an amorphous ferromagnetic metal having a co...  
WO/2020/033399A1
A magnetized playing card having: a first component; and a second component that joins with the first component to form the magnetized playing card; the first component having: a front first component face; a back first component face; w...  
WO/2020/031460A1
This sputtering target contains at least 0.05 at% of Bi, wherein the total contained amount of metal oxides is 10-60 vol%, and the remaining portion includes Co and Pt.  
WO/2020/027268A1
In order to obtain an inductor element advantageous for miniaturization, an inductor element 10 according to an embodiment of the present disclosure is provided with a metal medium 2 in which ordered spins are spatially oriented so as to...  
WO/2020/009095A1
In order to provide a Ni-based alloy for a seed layer, the alloy enabling achievement of a seed layer that exhibits enhanced alignment to the (111) plane and that has a fine crystal grain size, a sputtering target which contains said all...  
WO/2019/244662A1
The present invention provides a magnetic storage element that has a multilayer structure which is composed of a fixed layer (102) that has a fixed magnetization direction, a storage layer (106) that has a reversible magnetization direct...  
WO/2019/232839A1
Provided are a ferromagnetic insulating material and a manufacturing method and use thereof. The ferromagnetic insulating material has a structural formula of BiFexOy, wherein x has a given value range of 2-3, and y has a given value ran...  
WO/2019/230351A1
This spin-orbit torque magnetoresistance effect element (101) is provided with a first ferromagnetic layer (1), a second ferromagnetic layer (2), a nonmagnetic layer (3) positioned between the first ferromagnetic layer and the second fer...  
WO/2019/223999A1
The invention relates to a method for reconfiguration of a vortex density in a rare earth manganate, to a non-volatile impedance switch having reconfigurable impedance, and to the use thereof as micro-inductance having a small footprint....  
WO/2019/219470A1
The invention relates to hard magnets, comprising an intermetallic compound having the general composition XaX'bYcZd wherein X and X' independently from one another are representative of a 3d transition metal with unpaired electrons; Y i...  
WO/2019/203454A1
A magnetic device according to the present invention comprises: a fixed layer having an in-plane magnetization direction; a free layer, which has an in-plane magnetization direction and is aligned so as to be vertically spaced apart from...  
WO/2019/187674A1
Provided is a magnetoresistive element capable of achieving stable storage at higher temperatures even when the device size of the magnetoresistive element is small and demonstrating higher thermostability. This magnetoresistive element ...  
WO/2019/187520A1
Provided is a sputtering target that can be used to form a buffer layer that, if a magnetic recording layer granular film is layered above a ruthenium underlayer, makes good separation of magnetic crystal particles in the magnetic record...  
WO/2019/181302A1
[Problem] The purpose of the present invention is to provide a soft magnetic thin film and the like having a high saturation magnetic flux density and a low coercivity. [Solution] A soft magnetic thin film having soft magnetic crystallin...  
WO/2019/163203A1
This spin orbit torque type magnetization rotational element comprises a spin orbit torque wiring extending in a first direction, and a first ferromagnetic layer layered on the spin orbit torque wiring. The spin orbit torque wiring conta...  
WO/2019/160080A1
According to the present invention, a magnetic material having a higher Curie temperature can be achieved. This magnetic material is made of Sr3-xAxOs1-yByO6 (-0.5≤x≤0.5, -0.5≤y≤0.5, A is an alkali metal or an alkali earth metal,...  
WO/2019/151746A1
An antenna module according to one embodiment of the present invention, comprises: a coil layer including a wound first coil; a shield layer disposed on the coil layer and including a plurality of sequentially stacked magnetic sheets; an...  

Matches 1 - 50 out of 12,119