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JP7255952B2 |
To provide an ion beam source that has a reduced size and saved weight and is capable of suppressing occurrence of abnormal discharge by inhibiting pressure difference from occurring in gas to be supplied to a plasma chamber.An ion beam ...
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JP7253647B2 |
PURPOSE: To provide an electron beam ion generation device and an electron beam ion generation method that irradiate gas with an electron beam to generate ions.CONSTITUTION: An electron beam ion generation device includes an electron-gen...
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JP2023042906A |
To improve performance of an ion source for handling halogen-containing gas.An ion source IS, which is an ion source for handling halogen-containing gas as a material gas, includes a plasma generating container 1 within which plasma P is...
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JP7238249B2 |
An electron source in a gas-source mass spectrometer the electron source comprising: an electron emitter cathode presenting a thermionic electron emitter surface in communication with a gas-source chamber of the gas-source mass spectrome...
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JP7237877B2 |
To prevent at least deterioration in withstand voltage performance of an insulating member for electrically insulating a first electrode and a second electrode.An ion source device 10 includes a first vacuum container 11 for accommodatin...
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JP7227373B2 |
A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at le...
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JP2023507112A |
A ribbon-beam plasma-enhanced chemical vapor deposition (PECVD) system was positioned adjacent to and adjacent to a process chamber including a platen for supporting a substrate and adapted to generate free radicals within the plasma cha...
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JP7224290B2 |
Provided herein are high energy ion beam generator systems and methods that provide low cost, high performance, robust, consistent, uniform, low gas consumption and high current/high-moderate voltage generation of neutrons and protons. S...
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JP7220122B2 |
To provide an ion implanter in which an ion beam does not collide with an einzel lens.Plasma of ionization gas is formed by confining electrons by means of a magnet device 6, ions in the plasma are withdrawn by an extraction electrode 24...
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JP2023009327A |
To increase the pulse width of an ion beam generated by an ion generation device.An ion generation device 20 comprises laser devices 2a and 2b. The ion generation device 20 also comprises laser optical paths 3a and 3b provided correspond...
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JP2023008611A |
To obtain an ion source which can be repaired by a short-term replacement work even when discharge traces are formed on the surface of a cathode electrode.In an ion source that generates plasma and extracts an ion beam, a cathode electro...
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JP2023008925A |
To provide gas delivery techniques for charged particle microscopes, and specifically, reentrant gas delivery systems that deliver a gas from a low voltage potential to a high potential that allow flexible design while minimizing or elim...
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JP2023005317A |
To improve insulation durability between electrodes substantially without varying the size nor weight of an ion source.There is provided a leak detector 100 that guides a gas from an analyte X to an analytic pipe 4 having been evacuated,...
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JP7206286B2 |
A plasma ion source includes a plasma chamber body having at least one inlet for introducing a feed gas to an interior of the plasma chamber body. The plasma chamber body is electrically isolated from a vacuum chamber attached to the pla...
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JP2023001063A |
To provide a charge carrier generation source that reduces or avoids changes over time.A charge carrier generation source 100 includes a carrier generation region 120 configured to provide charge carriers, and a grid electrode 106, and t...
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JP2022554211A |
Duoplasmatron ion sources with partial ferromagnetic anodes can be used in a variety of applications such as negative ion generation for secondary ion mass spectrometers and particle accelerators. A partial ferromagnetic anode may be emb...
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JP7197530B2 |
An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic em...
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JP7194053B2 |
An ion generator includes an arc chamber defining a plasma generation space, and a cathode which emits thermoelectrons toward the plasma generation space. The arc chamber includes a box-shaped main body having an opening, and a slit memb...
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JP7190436B2 |
The invention provides an electron-impact ion source device having high brightness as compared to known Nier-type ion sources, while providing similar advantages in terms of flexibility of the generated ion species, for example. The ioni...
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JP7189078B2 |
A gas field ionization source for forming an electric field for ionizing gas comprises: an emitter tip having a tip end; an extraction electrode facing the emitter tip and having an aperture at a position distant therefrom; a gas supply ...
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JP7186884B2 |
Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathode 21 that is formed in a disc shape; a second cathode 12 that is formed in a disc shape and has an ion beam extraction ...
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JP7185487B2 |
To provide a negative ion generation device capable of radiating negative ion to an object at a proper timing.A control part 50 controls impression of a voltage by a voltage impression part 90 based on a measurement result by a potential...
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JP7179661B2 |
An analyzing apparatus (12b, 12c) includes a sample chamber (62, or 72), a measurement apparatus (60 and 70), and a gas cluster ion beam apparatus (2). A cooling body (18) separates an ionization chamber (14) of the gas cluster ion beam ...
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JP7171699B2 |
The invention relates to a field emission propulsion system (1) for spacecraft, comprising: a control unit (4); a propulsion assembly (2) with a plurality of field emission propulsion units (23) that comprise an ion source with a plurali...
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JP2022167278A |
To provide an ion source that is simple in configuration and relatively inexpensive in terms of material cost even when enlarged.An ion source IS2 has a plasma container 1, a plurality of flat plate electrodes 2-4 arranged in the directi...
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JP7147990B2 |
An ionization device including: a laser light source; a light collection optical system configured to irradiate a sample with the laser light; a first intensity changing unit configured to continuously change an intensity of laser light;...
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JP7144610B2 |
A method for improving the beam current for certain ion beams, and particularly germanium and argon, is disclosed. The use of argon as a second gas has been shown to improve the ionization of germane, allowing the formation of a germaniu...
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JP2022540503A |
Systems and methods for ion implantation are described that include a gas or gas mixture containing at least one ionizable gas used to generate ionic species and an arc chamber containing two or more different arc chamber materials. be d...
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JP7133450B2 |
To provide a cathode which has a combined structure, has a long life, and can be stably used.The cathode is used for an ion source for extracting an ion beam using gas. The cathode constituting the ion source includes: a cathode cap made...
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JP7126916B2 |
To provide an ion gun controller and ion gun control method, capable of suppressing degradation in exposure dose.An ion gun controller 70 includes a gas control section 71 and a voltage control section 72. The gas control section 71 repe...
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JP7125789B2 |
A specific type ion source 10 includes a chamber 11; a source gas supply 12 configured to supply an O2 gas into the chamber 11; a plasma forming device 13 configured to form plasma within the chamber 11 by applying a high frequency power...
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JP7118516B2 |
An extraction set including an extraction plate, a blocker and the holding mechanism for the blocker is disclosed. The extraction set includes an extraction plate that may be constructed of titanium coated with a ceramic material. The ex...
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JP2022536086A |
The present invention comprises an ionization space (10) formed within a container (11), an inhalation system (6) for supplying a gas (2) to be ionized to the ionization space (10) and an electron beam (19a). an electron source (14) havi...
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JP7117107B2 |
A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arr...
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JP2022534997A |
The ion source assembly and method have a source gas supply for supplying a molecular carbon source gas to the ion source chamber. A source gas flow controller controls the flow of molecular carbon source gas to the ion source chamber. T...
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JP7112496B2 |
A method hardens an anti-reflection treatment deposited on a transparent substrate that includes a top surface and a bottom surface which extends remotely from the top surface. The anti-reflection treatment includes depositing at least o...
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JP7104898B2 |
An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression...
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JP2022106692A |
To provide an ion source apparatus that enables low vapor pressure dopant source materials to be efficiently used for implanting gallium dopant species.An ion source apparatus for ion implantation includes an ion source chamber, and a co...
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JP2022104062A |
To provide a hollow cathode and an ion source that do not use a plasma generation gas, e.g. Ar, and can use a plasma raw material gas as a plasma generation gas.In hollow cathodes attached to a plasma generating container 101 included in...
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JP7096779B2 |
The ion source includes a microwave power supply provided outside main magnetic poles, a radiofrequency waveguide and an antenna configured to introduce a microwave generated by the microwave power supply to a region to which a magnetic ...
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JP7095196B2 |
To obtain an ion beam having high monochromaticity by using an acceleration mechanism of a laser drive type.In the case where a timing that a first region 32A is compressed near in a center by an ion compression due to an impulse wave ge...
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JP7093506B2 |
An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion s...
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JP7093358B2 |
An apparatus for improving the uniformity of an ion beam is disclosed. The apparatus includes a heating element to heat an edge of the suppression electrode that is located furthest from the suppression aperture. In operation, the edge o...
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JP2022095202A |
To provide an ion source capable of reducing the distance between a plasma generation space and a plasma generation coil.An ion source 100 includes; a vacuum container 2 into which gas is introduced; a plasma generation coil 4 that is pl...
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JP2022529986A |
The nuclear reaction generator includes a chamber configured to contain the gas and contain the target. The nuclear reaction generator also includes a filament provided in the chamber and a voltage source configured to apply a first posi...
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JP7091254B2 |
An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive compone...
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JP2022092639A |
To improve the success rate of plasma lighting in a high frequency ion source.High frequency ion sources RF1 to RF5 include a plasma container 4 with an ion extraction opening 10, and extraction electrode systems 5 to 7 for extracting an...
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JP2022084397A |
To provide an ECR ion source that can be miniaturized.An ECR ion source (1) includes a vacuum chamber (20), an iron yoke (30) that covers the vacuum chamber from the outside and has a recess (35) formed such that the cross-sectional shap...
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JP2022081201A |
To provide an insulation structure that can suppress the deterioration of insulation performance due to the adhesion of contaminants.An insulation structure 74 includes a first end portion 82, a second end portion 84, a shaft portion 86 ...
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JP2022071836A |
To stably supply source gas generated by the vaporization of a solid sample in a short time.An ion implantation device includes a crucible 12 provided on the inside 72 of a vacuum vessel 70 and having an internal space capable of accommo...
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