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WO/2024/078125A1 |
A composite trench-type Schottky diode device and a fabrication method therefor. The device comprises a substrate (201), an epitaxial layer (202), a trench structure array (203), a Schottky metal layer (204), a front metal electrode laye...
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WO/2024/078946A1 |
Device comprising: a surface for supporting a wafer; a gas inlet in the surface; a plurality of suction devices for gripping the wafer above the surface and drawing or pulling the wafer towards the surface; a shared vacuum line in fluid ...
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WO/2024/078883A1 |
In a method to obtain information to control a manufacturing process for a stacked semiconductor device including several semiconductor layers requiring electrically interconnection, sample data of a semiconductor device sample to be ins...
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WO/2024/080249A1 |
The present disclosure relates to a resin film-forming material comprising a compound A that includes two or more first groups and has an ester bond and a compound B that includes two or more second groups capable of forming a bond with ...
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WO/2024/081210A1 |
Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a process chamber configured to process a substrate, a substrate support comprising a heat sink configur...
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WO/2024/079851A1 |
A semiconductor memory device according to an embodiment of the present invention includes: a first chip including a first pillar having a first memory cell and a second memory cell connected in series; a second chip including a second p...
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WO/2024/080189A1 |
Provided is a top ring with which it is possible to improve uniformity of polishing.　This top ring for holding a substrate comprises: a base member connected to a rotary shaft; a substrate suctioning member including a porous member ha...
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WO/2024/078175A1 |
Disclosed are a gas distributor, a gas delivery apparatus, and a film processing apparatus thereof. The gas distributor comprises a first surface and a second surface, which are oppositely disposed; a gas diffusion channel is provided in...
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WO/2023/141162A8 |
Semiconductor processing tools with wafer back-side processing capabilities are disclosed. Such tools may be configured to only contact wafers being processed through edge contact, as opposed to underside/planar contact. Such tools may a...
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WO/2024/079975A1 |
This device for manufacturing a semiconductor device (10) comprises a reference jig (40) larger than a semiconductor chip (60), and a mounting tool (15) that individually suctions and transfers the semiconductor chip (60) and the referen...
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WO/2024/077803A1 |
A method for preparing a semiconductor device. The method comprises: providing a substrate, wherein the substrate is provided with a first-type well region and a second-type well region; performing first ion doping, forming a second-type...
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WO/2024/078637A1 |
Provided in the present invention are a high-voltage-resistance and low-on-resistance IGZO thin-film transistor and a preparation method therefor. Hydrogen ion doping is performed on an IGZO low-resistance drift region of a device, such ...
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WO/2024/079780A1 |
The purpose of the present invention is to provide a technology that is capable of suppressing the extension of a crack to the lower side of an interlayer insulating film when external stress associated with heat shrinkage stress is appl...
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WO/2023/049090A8 |
Dispensers for dispensing solutions, such as solutions containing a crystallizable component and solvent(s), onto substrates in a controlled manner. In some embodiments, a dispenser of the present disclosure includes an elongated slot an...
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WO/2024/080255A1 |
The present invention discloses a method for producing a semiconductor device. The method for producing a semiconductor device comprises: a resin film formation step for forming, on a semiconductor wafer, a resin film including a resin w...
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WO/2024/081201A1 |
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive; (b) an oxidizing agent; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 or less. The invention...
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WO/2024/078972A1 |
There is described a component carrier (100), wherein the component carrier (100) comprises: i) a stack (101) comprising at least one electrically conductive layer structure (104) and/or at least one electrically insulating layer structu...
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WO/2024/081135A1 |
A system for performing preventive maintenance of a processing chamber of a substrate processing system using atmospheric air comprises a first plurality of valves and manifolds, a second plurality of valves and manifolds, and a controll...
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WO/2024/079776A1 |
The present invention is a plasma processing method that provides a method that can build a self-limited process with excellent mass producibility in a cycle etching method that repeats an adsorption step for forming a reaction layer on ...
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WO/2024/081316A1 |
In wafer containers, a latching mechanism is provided to secure a wafer cassette within the container. The latching mechanism is driven by contact between an inner surface of the dome of the pod to contact the wafer cassette at a horizon...
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WO/2024/081174A1 |
The present disclosure relates to methods for protecting semiconductor substrate surfaces by coating the surfaces with a stimulus responsive polymer layer, the stimulus responsive polymer layer composed of copolymers with oxymethylene-co...
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WO/2024/077393A1 |
The present invention discloses methods to reduce a surface reflection and improve a contrast in an optoelectronic system with microdevices that may comprise of microLED's, microsensors, MEMS, or another type of semiconductor or optoelec...
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WO/2024/080257A1 |
The present disclosure relates to a method for manufacturing a semiconductor device, the method comprising: a first laminate production step for producing a first laminate including a semiconductor wafer, a resin layer including a resin ...
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WO/2024/080532A2 |
The present invention relates to plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and manufacturing methods therefor and, particularly, to plasma-resistant glass, an inner chamber component fo...
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WO/2024/079586A1 |
The present invention provides a semiconductor device which achieves miniaturization or high integration. This semiconductor device comprises a first insulator on a substrate, an oxide semiconductor that covers the first insulator, a fir...
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WO/2024/078281A1 |
A device packaging method, a device packaging module and an electronic device, which relate to the field of device packaging and aim to reduce the size of the device packaging module. The specific solution is as follows: the device packa...
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WO/2024/078227A1 |
Provided in the specific embodiments of the present invention are an organosilicon nanometer hydrophobic film layer and a preparation method therefor. The organosilicon nanometer hydrophobic film layer is formed by the plasma polymerizat...
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WO/2024/077728A1 |
The present disclosure relates to the technical field of semiconductors, and provides a manufacturing method for a semiconductor structure, and the semiconductor structure. The manufacturing method for the semiconductor structure compris...
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WO/2024/080020A1 |
Provided is a fluid supply mechanism 100 that repeatedly supplies and stops supply of a fluid to a chamber CH, the fluid supply mechanism 100 comprising: a fluid supply path L1 that communicates with the chamber 100; a tank T provided to...
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WO/2024/077592A1 |
Provided in the present application is a three-dimensional memory, comprising: a stacked layer, which is located on a semiconductor layer; a storage channel structure, which penetrates through the stacked layer and comprises a first chan...
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WO/2024/080332A1 |
This substrate conveyance robot system (100) comprises a substrate-holding hand (23) that holds each of a plurality of substrates, a robot arm (21), and a control unit (30). The control unit (30) acquires, on the basis of a result of det...
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WO/2024/077894A1 |
The present application relates to the technical field of photovoltaic cell production, in particular to a method for fixedly connecting a cell string, a pressing tool assembly, and a curing device. The method for fixedly connecting a ce...
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WO/2024/077826A1 |
The present disclosure relates to a semiconductor structure and a manufacturing method therefor. The manufacturing method for the semiconductor structure comprises: providing a substrate which comprises an active region; forming target b...
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WO/2024/081087A1 |
A bimetallic faceplate for substrate processing is provided including a plate having a plurality of gas distribution holes and formed of a first metal having a first coefficient of thermal expansion, the plate having at least one groove ...
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WO/2024/081097A1 |
Embodiments disclosed herein include a method of monitoring a condition of a chamber. In an embodiment, the method comprises processing a substrate in the chamber, providing substrate history and chamber data to a model of the chamber, w...
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WO/2024/081085A1 |
Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a pedestal, an annular separator over the pedestal to define a first domain within the annular separator ...
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WO/2024/080002A1 |
A semiconductor device (100) comprises a semiconductor substrate (10), an emitter electrode (52), and a polyimide protection film (150). The semiconductor substrate has: an active part (120) that has alternating transistor parts (70) and...
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WO/2024/080089A1 |
This semiconductor device comprises: a semiconductor circuit part; a first conduction member electrically connected to the semiconductor circuit part; a second conduction member electrically connected to the semiconductor circuit part; a...
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WO/2024/077864A1 |
The present invention relates to the technical field of semiconductors. Provided is an attaching fitting method for improving polishing flatness and productivity, characterized in that: four rotatable ceramic plates are mounted on one po...
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WO/2024/081263A1 |
Provided are methods for depositing a metal-containing film by in situ generation of an iodine-bond containing metal species with an iodine-containing reagent and a metal-containing precursor followed by reduction at a process temperatur...
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WO/2024/075592A1 |
This substrate processing system includes a processing module, a vacuum conveyance module that is connected to the processing module and has a conveyance robot conveying a ring, a temperature adjustment unit that can adjust the temperatu...
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WO/2024/076495A1 |
Methods and systems for determining information for a specimen are provided. One system includes an output acquisition subsystem configured to generate output for a specimen at one or more target locations on the specimen and one or more...
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WO/2024/075596A1 |
The disclosed plasma treatment device comprises a chamber, a substrate-supporting portion, a high-frequency power supply, and a control unit. The substrate-supporting portion is provided inside the chamber. The high-frequency power suppl...
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WO/2024/076890A1 |
Semiconductor devices are provided. In one example, a semiconductor device includes a semiconductor structure having a buried layer at a depth of about 275 Angstroms or greater (e.g., about 500 Angstroms or greater) from a surface of the...
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WO/2024/076599A1 |
Methods and systems for realizing a high throughput wafer positioning system with high positioning accuracy are presented herein. The high throughput, high accuracy wafer positioning system is employed to measure structural and material ...
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WO/2024/075562A1 |
Provided is a bonding device for bonding a first substrate and a second substrate, the bonding device including: a first holding part that holds the first substrate by attraction; a second holding part that is disposed at a position faci...
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WO/2024/074378A1 |
An electronic device (100) which comprises a three-dimensionally non-planar mold body (102) defining at least part of one of a non-planar side surface (104) and an opposed non-planar side surface (106) of the electronic device (100), an ...
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WO/2024/075432A1 |
Provided is a method for producing a vertical silicon carbide semiconductor device that comprises electrodes on both main surfaces of a semiconductor chip (30) in which an epitaxial layer (2) and a n- type low-concentration buffer layer ...
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WO/2024/076767A1 |
Embodiments of bipolar electrostatic chucks are provided herein. In some embodiments, a bipolar electrostatic chuck includes a ceramic plate; a plurality of electrodes disposed in the ceramic plate, wherein the plurality of electrodes in...
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WO/2024/075598A1 |
This surface observation method comprises a step a) and a step b). In the step a), materials including one or more kinds of solid light-emitting dye molecules are accumulated in a region, of a substrate or a structure on the substrate, h...
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