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WO/2019/188252A1 |
The present invention provides an integrated circuit device in which variable resistance memory elements are disposed in multiple layers upon taking operation efficiency into account. The integrated circuit device 1000 includes an MTJ el...
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WO/2019/188203A1 |
Provided are: a magnetic tunnel junction device that suppresses the diffusion or intrusion of a constituent element between a hard mask film, a magnetic tunnel junction film, and a protective layer; and a method for manufacturing a magne...
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WO/2019/182589A1 |
A memory device comprises a perpendicular magnetic tunnel junction (PMTJ) stack disposed above a substrate. The PMTJ stack has a first free layer magnet, a reference fixed magnet, and a barrier material between the first free layer magne...
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WO/2019/181408A1 |
This magnetic sensor 1 comprises: radial magnetoresistance elements (first magnetoresistance element 2 and second magnetoresistance element 3) comprising a plurality of magnetic sensing parts (first magnetic sensing parts 20 and second m...
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WO/2019/182591A1 |
Embedded non-volatile memory structures having selector elements with negative differential resistance (NDR) elements are described. In an example, a memory device includes a word line. A selector element is above the word line. The sele...
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WO/2019/177086A1 |
This MgO sintered body has an average crystal particle diameter that is greater than 10 µm but is no more than 100 µm, and has a surface with a center line average roughness Ra of 1.6 µm or less.
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WO/2019/177204A1 |
A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic...
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WO/2019/173421A1 |
The disclosed magnetoresistive device (100) includes vertically stacked annular-shaped magnetic tunnel junction (MTJ) bits. Each MTJ bit (50) includes an annular-shaped magnetically free region (80) and an annular-shaped magnetically fix...
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WO/2019/172928A1 |
A pSTTM device includes a first electrode and a second electrode, a free magnet between the first electrode and the second electrode, a fixed magnet between the first electrode and the second electrode, a tunnel barrier between the free ...
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WO/2019/171715A1 |
This spin element 100 comprises: an element part containing a first ferromagnetic layer 1; an energization part 5 contiguous the first ferromagnetic layer 1 and extending in a first direction (X direction) as seen from a stacking directi...
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WO/2019/171872A1 |
Provided is a semiconductor device of a structure which is suitable for high integration. This semiconductor device has: a transistor having a gate part, a first diffusion layer, and a second diffusion layer; a first conductive part; a s...
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WO/2019/172879A1 |
A stacked device structure includes a first device structure including a first body that includes a semiconductor material, and a plurality of terminals coupled with the first body. The stacked device structure further includes an insula...
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WO/2019/167575A1 |
This spin-orbit torque-type magnetization rotation element comprises a spin-orbit torque wire that extends in a first direction, and a first ferromagnetic layer that is layered on the spin-orbit torque wire. The spin-orbit torque wire co...
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WO/2019/166187A1 |
The non-reciprocal quantum device (10; 20; 30; 40; 50; 60; 70) comprises a first terminal (A) and a second terminal (B), a transmission structure connected between the first and second terminals and configured to transmit microscopic par...
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WO/2019/168537A1 |
An apparatus is provided which comprises: a magnet structure including a first magnet (e.g., ferromagnet/paramagnet), a second magnet (e.g., ferromagnet/paramagnet), and a coupling structure (e.g., Ru, Ir, Cu, Os, Hs, Fe, etc.) between t...
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WO/2019/167598A1 |
[Problem] To configure a magneto-sensitive element so as to cause a magnetic bias to be applied thereto from two directions. [Solution] The present invention is provided with: a magneto-sensitive element R2 in which the x-direction is th...
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WO/2019/167198A1 |
This stabilization method for spin elements applies a pulse current having a current density of 1.0 × 107–1.0×109 A/cm2 and a pulse width within a prescribed range, applying same if the ambient temperature is a prescribed temperature...
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WO/2019/167929A1 |
This ferromagnetic laminated film comprises a plurality of first magnetic layers, at least one second magnetic layer, and at least one first non-magnetic layer. The first magnetic layers are laminated alternately with the second magnetic...
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WO/2019/167197A1 |
This stabilization method for spin elements applies a current pulse of at least a prescribed current value at a prescribed temperature, in a spin element comprising a conductive section extending in a first direction and an element unit ...
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WO/2019/163203A1 |
This spin orbit torque type magnetization rotational element comprises a spin orbit torque wiring extending in a first direction, and a first ferromagnetic layer layered on the spin orbit torque wiring. The spin orbit torque wiring conta...
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WO/2019/163641A1 |
This method for forming a magnetic film comprises: (S12) formation of an amorphous magnetic film by means of sputtering of a target which is mainly composed of one substance that is selected from the group consisting of Mn3Sn, Mn3Ge and ...
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WO/2019/159885A1 |
This spin element is provided with: a conduction portion extending in a first direction; and an element portion stacked on one surface of the conduction portion, wherein the conduction portion has a first wire and a second wire from the ...
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WO/2019/159428A1 |
This spin orbit torque-type magnetization rotation element is provided with: a spin orbit torque line extending in a first direction; and a first ferromagnetic layer laminated on one surface of the spin orbit torque line, wherein: the sp...
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WO/2019/159962A1 |
Provided is a perpendicular magnetization type three-terminal SOT-MRAM which does not require an external magnetic field. A magnetoresistive effect element wherein: a first magnetic layer (3), a non-magnetic spacer layer (4) and a record...
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WO/2019/160080A1 |
According to the present invention, a magnetic material having a higher Curie temperature can be achieved. This magnetic material is made of Sr3-xAxOs1-yByO6 (-0.5≤x≤0.5, -0.5≤y≤0.5, A is an alkali metal or an alkali earth metal,...
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WO/2019/155957A1 |
Provided are: a magnetoresistance effect element that can be used as an element constituting a neural network, etc.; and a circuit device and circuit unit in which the magnetoresistance effect element is used. A write current pulse Pw1 f...
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WO/2019/156736A1 |
Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) (900) for storing data may include a reference layer (906). A free layer (902) of an MTJ (900) may be separated f...
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WO/2019/150528A1 |
A method for writing data according to an aspect of the present invention pertains to applying a voltage, which is higher than or equal to a critical writing voltage and less than or equal to a given voltage at the ambient temperature, a...
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WO/2019/150885A1 |
Provided is a method for producing magnetoresistive elements wherein the removal of side wall oxides on a magnetic layer and the formation of a protective layer are simultaneously achieved, a deterioration in magnetic characteristics is ...
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WO/2019/148760A1 |
Disclosed is a topological insulator structure having an insulating protection layer, comprising: an insulating substrate, a topological insulator quantum well thin film, and an insulating protection layer. The topological insulator quan...
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WO/2019/151696A1 |
A magnetic memory according to one embodiment of the present invention comprises: a magnetic tunnel junction comprising a free layer, a reference layer, and a tunnel barrier layer disposed between the free layer and the reference layer; ...
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WO/2019/151644A1 |
The present invention relates to layered ZnSb, a ZnSb nanosheet, and preparation methods therefor. According to the present invention, a ZnSb nanosheet can be formed by efficiently releasing ZnSb, which is a polymorphic layered material ...
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WO/2019/150532A1 |
The method for writing data according to an aspect of the present invention pertains to loading an energy less than or equal to an energy E in a first direction of an energized part when the pulse width of an applied pulse is t in a spin...
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WO/2019/148761A1 |
Disclosed in the present application is a dual-channel topological insulator structure, comprising: an insulating substrate, a first topological insulator quantum well thin film, an insulating spacer layer, and a second topological insul...
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WO/2019/151643A1 |
The present invention relates to layered AZnBi (wherein A is any one of K, Na, and Li), layered ZnBi, a ZnBi nanosheet, and preparation methods therefor. The purpose of the present invention is to overcome the structure of a parent phase...
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WO/2019/148762A1 |
The present application provides a multi-channel topological insulator structure, comprising: an insulating substrate (10), a plurality of topological insulator quantum well thin films (20), and a plurality of insulating spacer layers (4...
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WO/2019/147924A1 |
A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic an...
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WO/2019/140729A1 |
A memristive device employing a ferromagnetic material has a multilayer film structure, and comprises a ferromagnetic layer, or comprises a magnetic tunnel junction (abbreviated as MTJ) consisting of a first ferromagnetic layer, a non-ma...
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WO/2019/142634A1 |
The present invention relates to a magnetic detection device (100) provided with a full-bridge circuit HB in which magnetic detection elements M1, R2 are provided on the same substrate SB, wherein the magnetic detection elements M1, R2 a...
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WO/2019/142635A1 |
The present invention relates to a magnetic detection device (100) provided with a full-bridge circuit HB in which magnetic detection elements M1, R2 are provided on the same substrate SB, wherein the magnetic detection elements M1, R2 a...
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WO/2019/143052A1 |
A memory device is disclosed. The memory device according to an embodiment of the present invention comprises a lower electrode, a seed layer, a lower synthetic exchange diamagnetic layer, a magnetic tunnel junction, an upper synthetic e...
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WO/2019/141677A1 |
A device (1) for guiding charge carriers and uses of the device are proposed, wherein the charge carriers are guided by means of a magnetic field (F) along a curved or angled main path (3) in a two- dimensional electron gas, in a thin su...
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WO/2019/139110A1 |
[Problem] To provide a magnetic sensor that makes it possible to improve the sensitivity of magnetic field detection as compared to when a flat gap is used. [Solution] Provided are a magnet layer 2 formed in a first layer Z1, magnet laye...
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WO/2019/139029A1 |
A domain wall motion type magnetic recording element (100) according to one embodiment of the present invention is provided with: a first ferromagnetic layer (10) which contains a ferromagnetic body; a non-magnetic layer (30) which faces...
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WO/2019/139575A1 |
An apparatus is provided which comprises: a magnet; a first structure comprising spin orbit material, wherein a portion of the structure is adjacent to the magnet; a second structure comprising piezo-electric material; and a conductor co...
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WO/2019/138778A1 |
Provided is an X-type 3-terminal type STT-MRAM (spin-orbit torque magnetization reversal element) that achieves both a high thermal stability index Δ and a low writing current IC characteristics. The magnetoresistance effect element has...
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WO/2019/138828A1 |
This semiconductor device is provided with: a first gate electrode comprising a first main wiring part which extends in a first active region of a semiconductor substrate in a first direction and divides the first active region into a fi...
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WO/2019/139612A1 |
A transistor, including an antiferroelectric (AFE) gate dielectric layer is described. The AFE gate dielectric layer may be crystalline and include oxygen and a dopant. The transistor further includes a gate electrode on the AFE gate die...
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WO/2019/139774A1 |
In one aspect, to fabricate MTJs in an MRAM array with reduced MTJ row pitch, a first patterning process is performed to provide separation areas in an MTJ layer between what will become rows of fabricated MTJs, which facilitates MTJs in...
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WO/2019/138535A1 |
This magnetic domain wall displacement type magnetic recording element comprises: a first ferromagnetic layer containing a ferromagnetic body; a magnetic recording layer extending in a first direction intersecting with the layering direc...
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