| Document |
Document Title |
|
WO/2022/129570A1 |
A graphene Hall sensor (10) for operation at cryogenic temperatures (below 120 K) comprises a dielectric layer (12), preferably of alumina or silica, provided on a graphene sheet formed on a substrate (18), a first pair of electrical con...
|
|
WO/2022/127427A1 |
A magnetic memory bit and a manufacturing method therefor, and a magnetic memory. The magnetic memory bit comprises a fixed layer, a reference layer, a tunnel layer, and a free layer. The free layer comprises a plurality of stacked struc...
|
|
WO/2022/129306A1 |
The present invention relates to a device (12) for modifying at least the direction of magnetisation of a magnetic layer (10), the modifying device (12) comprising: - a ferroelectric layer (14) having a ferroelectric polarisation, placed...
|
|
WO/2022/129606A1 |
A method of producing an electronic device precursor (200), particularly for forming a Hall sensor or a transistor, comprises patterning a plasma-resistant dielectric (215) on a graphene layer (210) provided on a substrate (205), plasma ...
|
|
WO/2022/122283A1 |
The disclosed spin-orbit torque (SOT)-MRAM (100) comprises a first magnetic tunneling junction (125A, 130A, 135A) having a first diameter and a first critical voltage, a second MT] (125B, 130B, 135B) having a second diameter and a second...
|
|
WO/2022/122469A1 |
An apparatus comprising a magnetic tunnel junction (MTJ), a diffusion barrier, wherein the MTJ is located on the diffusion barrier and a bottom contact that includes a magnetic field generating component, wherein the diffusion barrier is...
|
|
WO/2022/121572A1 |
The present invention provides a magnetic tunnel junction stack structure, comprising: a spin-orbit torque providing layer, a first free layer, a coupling layer, a second free layer, a barrier layer, and a reference layer which are seque...
|
|
WO/2022/121014A1 |
A lithium niobate semiconductor structure, comprising a first lithium niobate material layer, a second lithium niobate material layer and a third lithium niobate material layer. The ferroelectric domain polarization direction of the firs...
|
|
WO/2022/117563A1 |
A method of making mesosurfaces, allowing for realising smaller and more complex structures and for a dynamic reversible modification thereof, comprises contacting a defined and delineated surface area of a substrate with a liquid which ...
|
|
WO/2022/117559A1 |
The present invention relates to nano-stripes of a compound, which crystallizes in the magnetic point group 42m with D2d symmetry wherein the nano-stripes have a thickness of 5-500 nm, a width of 10-1000 nm, and a length of 100-10000 nm ...
|
|
WO/2022/111483A1 |
Provided are a magnetic tunnel junction free layer, and a magnetic tunnel junction structure having same. The magnetic tunnel junction free layer comprises a first magnetic composite layer, an antiferromagnetic spacer structure and a sec...
|
|
WO/2022/110187A1 |
Provided in the embodiments of the present application are a memory and an electronic device, related to the technical field of memories, capable of solving the problem of a large current being required for flipping a free layer in a mag...
|
|
WO/2022/115379A1 |
Disclosed herein are devices and method for realizing field- free deterministic switching of a perpendicularly polarized magnet using SOTs in a quantum material with low- symmetry crystal structure. In preferred embodiments, SOT devices ...
|
|
WO/2022/110212A1 |
Provided are a memory and an electronic device, which relate to the technical field of memories, and by means of which the reversal speed of a free layer can be increased. The memory comprises a plurality of storage units, which are arra...
|
|
WO/2022/110326A1 |
Provided by the present invention is a magnetic tunnel junction memory, comprising: a write control transistor and a read control transistor vertically stacked on top of each other, wherein sources of the write control transistor and the...
|
|
WO/2022/107766A1 |
The present invention addresses the problem of achieving a smaller size. A magnetic sensor according to the present disclosure is provided with a plurality of magnetic reluctance pattern units (131-134) constituting a bridge circuit. The...
|
|
WO/2022/107764A1 |
The present disclosure addresses the problem of reducing an influence on a magnetoresistive layer when a support substrate is cut. A magnetic sensor (1) of the present disclosure is provided with a support substrate (11), a glaze layer, ...
|
|
WO/2022/107609A1 |
This storage device (1) comprises: a plurality of storage elements (e.g., MTJ elements 10) that each have a fixed layer having a magnetization direction that is fixed, a storage layer having a magnetization direction that can be changed,...
|
|
WO/2022/105218A1 |
Disclosed is a method for etching an MRAM magnetic tunnel junction. The method comprises: step 1, performing a main etching step with an etching amount of t1 by using ion beam etching and/or reactive ion etching, wherein the direction an...
|
|
WO/2022/107763A1 |
The problem addressed by the present disclosure is to suppress any decrease in the accuracy of detecting the position of a detected object. A magnetic sensor according to the present disclosure comprises a plurality of reluctance pattern...
|
|
WO/2022/106940A1 |
A magnetic memory device includes a magnetic tunnel junction (MTJ) pillar containing a stable resonant synthetic antiferromagnet (SAF) reference layered structure (10) in which the ferromagnetic resonance characteristics of a polarizing ...
|
|
WO/2022/107765A1 |
The present disclosure addresses the problem of suppressing a reduction in the precision with which the position of a detected object is detected while suppressing an increase in production steps. In this magnetic sensor, each of a plura...
|
|
WO/2022/102283A1 |
A semiconductor memory device according to an embodiment of the present disclosure comprises multiple memory cells and a control circuit. Each memory cell includes a magnetization reversal memory element and a first switch element for co...
|
|
WO/2022/102770A1 |
This magnetization rotary element comprises spin-orbit torque wiring and a first ferromagnetic layer that is in contact with the spin-orbit torque wiring, wherein said wiring comprises, in order of proximity to the first ferromagnetic la...
|
|
WO/2022/095711A1 |
A method for manufacturing a magnetic sensor, comprising the following steps: providing a semiconductor substrate (1), forming a first insulating layer (2) on a surface of the semiconductor substrate (1), and forming a magnetoresistive c...
|
|
WO/2022/095033A1 |
Provided in the present application are a spin orbit torque magnetic random access memory, a manufacturing method therefor, and a storage device, which relate to the field of memories. Provided is a spin orbit torque magnetic random acce...
|
|
WO/2022/087768A1 |
A magnetic tunnel junction (200, 300, 400), a magnetoresistive random access memory (50), and an electronic device, capable of improving the thermal stability of the magnetic tunnel junction. The magnetic tunnel junction comprises: a ref...
|
|
WO/2022/089953A1 |
A magnetic domain device is provided in which a magnetic free layer (66, i.e., the storage layer) of a magnetic tunnel junction (MTJ) pillar is in close proximity to a conductive write line (62) that is disposed beneath the MTJ pillar. T...
|
|
WO/2022/093324A1 |
A magnetoresistive memory device includes a magnetic tunnel junction including a free layer, at least two tunneling dielectric barrier layers, and at least one metallic quantum well layer. The quantum well layer leads to the resonant ele...
|
|
WO/2022/086597A1 |
A memory cell includes an ovonic threshold switch (OTS) selector containing a first electrode, a second electrode, an OTS located between the first electrode and the second electrode, and a current focusing layer containing discrete elec...
|
|
WO/2022/085190A1 |
This neuromorphic device comprises a first element group and a second element group. The first element group and the second element group each include a plurality of magnetic domain wall moving elements. The plurality of magnetic domain ...
|
|
WO/2022/083193A1 |
Provided in the present disclosure is a neuron device based on a spin orbit torque. The neural device comprises: an anti-ferromagnetic pinning layer, a first ferromagnetic layer and a spin orbit coupling layer which are formed on a subst...
|
|
WO/2022/070842A1 |
A magneto-impedance sensor element (1) includes: a magneto-sensitive body (2) the electromagnetic characteristics of which change according to a magnetic field acting from the outside; and a detection coil (3) wound around the magneto-se...
|
|
WO/2022/067599A1 |
A three-axis Hall magnetometer, comprising magnetic beam deflection structures (502, 503) located on a first plane and a plurality of vertical Hall assemblies (A1, A2, A3, A4, B1, B2, B3, B4) located on a second plane, and not comprising...
|
|
WO/2022/070378A1 |
A domain wall displacement element according to the present embodiment comprises: a magneto-resistance effect element having, in order from the side closer to a substrate, a reference layer, a non-magnetic layer, and a domain wall displa...
|
|
WO/2022/070588A1 |
A magnetic element according to the present embodiment comprises a wiring layer and a first ferromagnetic layer that comes into contact with the wiring layer, in which the wiring layer comprises a first layer that is crystalline and a se...
|
|
WO/2022/062263A1 |
The present disclosure belongs to the technical field of memory, and mainly relates to a magneto-resistive device, a method for changing a resistance state thereof and a synaptic learning module. The magneto-resistive device comprises a ...
|
|
WO/2022/065081A1 |
This manufacturing method for a magnetoresistance effect element includes a step (a) of mounting a substrate on a substrate support part of an oxidation processing device. The substrate has a ferromagnetic layer and a magnesium layer. Th...
|
|
WO/2022/062427A1 |
The present disclosure provides a fully electric controlled spintronic neural component, a neural circuit, and a neural network. The neural component comprises: a bottom antiferromagnetic pinning layer ; a synthetic antiferromagnetic lay...
|
|
WO/2022/058479A1 |
The invention relates to an antiferromagnetic memory structure (1) configured for use in a non-transitory antiferromagnetic memory device (2), characterized in that the antiferromagnetic memory structure (1) comprises an antiferromagneti...
|
|
WO/2022/055076A1 |
The present invention relates to a spin torque majority gate based on domain wall movement, and a spin torque majority gate according to one embodiment comprises: a plurality of input terminals; a hall-cross part in which a domain wall g...
|
|
WO/2022/055587A1 |
In one aspect, an integrated circuit includes a first conductive layer and a magnetoresistance element (MRE) disposed over and coupled to the first layer through first vias. The MRE is magnetized to produce a first magnetic orientation. ...
|
|
WO/2022/051750A1 |
A MOD YIG epitaxial process for fabricating YIG nanofilms which, when deposited on GGG substrates, have single crystal epitaxial properties. The films may have thicknesses of 50 nm for a single layer, 100 nm for two layers, andl30 nm for...
|
|
WO/2022/048083A1 |
A magnetic random access memory device and a method for manufacturing same. The device comprises: a substrate, on which a first interlayer dielectric layer and bottom electrode contact parts, which extendingly pass through the first inte...
|
|
WO/2022/048092A1 |
An MTJ manufacturing method and an MTJ. The manufacturing method comprises: sequentially forming and stacking together a reference layer (50), an insulating barrier layer (40), and a free layer (30), wherein at least one of the reference...
|
|
WO/2022/048084A1 |
A magnetic random access memory device and a manufacturing method therefor. Said device comprises a substrate (100) on which a bottom electrode (1002) is formed, a magnetic tunnel junction unit(101) located above the bottom electrode (10...
|
|
WO/2022/046237A1 |
A magnetic memory device includes a first electrode, a second electrode, and a layer stack located between the first electrode and the second electrode. The layer stack includes a reference layer, a tunnel barrier layer, a free layer, an...
|
|
WO/2022/038611A1 |
Devices for sensing and manipulating magnetic fields based on spin current interactions independent of the Spin Hall Effect (SHE) in heavy metal. Spin current is generated in ordinary metals by conversion of out-of-plane orbital current ...
|
|
WO/2022/034758A1 |
A production method for a magnetoresistive element comprising: a step for preparing a laminate having a first magnetic layer, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magn...
|
|
WO/2022/032562A1 |
Embodiments of the present application provide a storage unit and a related device. A first electrode of a first MTJ comprised in the storage unit is connected in series to a first electrode of a second MTJ by means of a first metal wire...
|
