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WO/2021/105825A1 |
A method for fabricating a semiconductor device includes forming a conductive shell layer along a memory stack and a patterned hardmask disposed on the memory stack, and etching the patterned hardmask, the conductive shell layer and the ...
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WO/2021/107868A1 |
This invention relates to a multiferroic material and a method of preparing the same. In particular, the invention relates to a multiferroic material that possesses both ferroelectric and ferromagnetic properties and is stable at room te...
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WO/2021/105789A1 |
An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) eleme...
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WO/2021/103052A1 |
A high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function and a manufacturing method therefor, belong to the field of semiconductor sensors. Technical solution: a buffer layer, an epitaxial...
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WO/2021/103810A1 |
Provided in the present invention is an MTJ device. The MTJ device comprises: a fixed layer, an insulating barrier layer and a free layer which are sequentially stacked, wherein the fixed layer and the free layer are perpendicularly magn...
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WO/2021/102750A1 |
A spin logic device, relating to the technical field of circuits. The spin logic device comprises a first ferromagnetic layer, a first potential barrier layer, a fixed layer, a second potential barrier layer and a second ferromagnetic la...
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WO/2021/100252A1 |
[Problem] To provide a compact magnetic sensor capable of a closed-loop control. [Solution] A magnetic sensor 1 equipped with: a sensor chip 20 mounted to a surface 11 of a substrate 10 in a manner such that an element-forming surface ma...
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WO/2021/101582A1 |
A magnetoresistive memory device includes a first electrode, a second electrode, and a layer stack containing an electric field-modulated magnetic transition layer and a ferroelectric insulator layer located between the first electrode a...
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WO/2021/101585A1 |
Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.
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WO/2021/096657A1 |
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device s...
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WO/2021/095468A1 |
This lamination structure achieves both high spin polarization rate and low electric resistance. This lamination structure has: a Heusler alloy; and graphene in direct contact with the Heusler alloy on a surface of the Heusler alloy. Thi...
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WO/2021/095310A1 |
A magnetic sensor 1 comprises: a plurality of sensing elements 31 which are composed of soft magnetic material, have a longitudinal direction and a transverse direction, have a uniaxial magnetic anisotropy in a direction intersecting the...
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WO/2021/091484A1 |
A magnetic logic device having two magnetic elements and a conductive element coupled to the two magnetic elements and arranged at least substantially perpendicular to the magnetic elements, wherein the device is configured, for each mag...
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WO/2021/086429A1 |
A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from botto...
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WO/2021/084366A1 |
A modified double magnet tunnel junction (mDMTJ) structure (100) is provided which includes a non-magnetic, spin-conducting metallic layer (106) sandwiched between a magnetic free layer (108) and a first tunnel barrier layer (104); the f...
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WO/2021/085642A1 |
Provided are a tunnel junction laminated film having high thermal stability, and a magnetic memory element and a magnetic memory using a tunnel junction laminated film. A tunnel junction laminated film 1 includes a recording layer 14 hav...
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WO/2021/077756A1 |
The present disclosure provides a manufacturing method including an MRAM bottom electrode manufacturing process, and an MRAM device. The manufacturing method comprises: providing a substrate, the substrate comprising a metal interconnect...
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WO/2021/076203A1 |
A film stack for a magnetic tunnel comprises a substrate, a magnetic reference layer disposed over the substrate, and a tunnel barrier layer disposed over the magnetic reference layer. The film stack further comprises a magnetic storage ...
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WO/2021/075343A1 |
Provided are a magnetic device having a simple configuration and a computing apparatus. A magnetic device according to an embodiment comprises a first electrically conductive portion, a first magnetic layer, a second magnetic layer, a se...
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WO/2021/066100A1 |
Provided is a driving method of a simplified synapse circuit. When a first pre-spike pulse precedes a first post-spike pulse, a second pre-spike pulse from an input circuit 20a is used as a time window in which writing of a connection we...
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WO/2021/063370A1 |
Disclosed are a magnetic memory and a preparation method for the magnetic memory. The magnetic memory comprises a heavy metal layer, a metallic thin film layer, and a magnetic tunnel junction (MTJ) layer. The metallic thin film layer is ...
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WO/2021/066743A1 |
A spin-orbit torque device 100 is described. In an embodiment, the spin-orbit torque device 100 comprises: a functionally graded magnetic layer 104, the functionally graded magnetic layer 104 having a switchable magnetisation direction a...
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WO/2021/059751A1 |
[Problem] To detect extremely weak magnetic fields by efficaciously reducing irregular noise. [Solution] A magnetic sensor 1, comprising a magnetoresistive strip S made of a plurality of magnetoresistive elements R arranged in the y-dire...
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WO/2021/058932A1 |
A semiconductor device (110) which comprises a substrate (112) and a plurality of layers (113a, 113b) of semiconductor material. A primary region (1114) is provided which has a primary contact (C) associated therewith. The device include...
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WO/2021/056483A1 |
An MTJ unit, a VCMA driving method and an MRAM, wherein in the MTJ unit, there is an included angle between a stable magnetic moment direction of a free layer (101) and a magnetic moment direction of a reference layer (103), and the incl...
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WO/2021/059114A1 |
A hardened gap fill dielectric material that has improved chemical and physical properties is formed laterally adjacent to a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode structure of a memory structure. The hard...
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WO/2021/055197A1 |
A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etc...
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WO/2021/055113A1 |
An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices. ...
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WO/2021/051969A1 |
The present invention provides a method for manufacturing a magnetic tunnel junction (MTJ). The method comprises: providing a substrate, and successively depositing a bottom electrode material layer, an MTJ material layer, a metal hard m...
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WO/2021/055487A1 |
This invention describes a thermoelectric energy generation device based on the ExB drift in a semiconductor. The material is in depletion mode to avoid cancellation of the electric field by space charges. Under ideal, infinite mobility,...
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WO/2021/053455A1 |
A method for forming an MRAM device includes: forming MTJs (202) on interconnects (106) embedded in a first dielectric (102); depositing an encapsulation layer (204) over the MTJs (202); burying the MTJs (202) in a second dielectric (206...
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WO/2021/053423A1 |
Magnetic structures including magnetic inductors and magnetic tunnel junction (MTJ)-containing structures that have tapered sidewalls are formed without using an ion beam etch (IBE). The magnetic structures are formed by providing a mate...
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WO/2021/052009A1 |
A magnetic tunnel junction (MTJ) bottom electrode and a manufacturing method therefor. The MTJ bottom electrode comprises a bottom electrode substrate layer and a bottom electrode buffer layer laminated to each other. The lower surface o...
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WO/2021/042834A1 |
The present invention provides an electrode assembly preparation method, comprising: providing a substrate having a through hole, a diffusion blocking layer being provided on the sidewall of the through hole; filling the through hole wit...
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WO/2021/045801A1 |
A spin-transfer torque (STT) magnetoresistive memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junction include...
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WO/2021/041735A1 |
A magnetic memory array having an epitaxially grown vertical semiconductor selector connected with a memory element via a bottom electrode such as TaN. An electrically conductive contact such as tungsten (W) or TaN can be included betwee...
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WO/2021/038397A1 |
A dielectric material structure is formed laterally adjacent to a bottom portion of a bottom electrode metal-containing portion that extends upward from an electrically conductive structure that is embedded in an interconnect dielectric ...
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WO/2021/040797A1 |
The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical T...
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WO/2021/028334A1 |
The present invention relates to a method for producing a printed magnetic functional element, in which a substrate (1) is provided on one surface with at least one contact (2) made of an electrically conductive material. Subsequently, a...
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WO/2021/027404A1 |
The present invention provides a magnetic tunnel junction, at least comprising a reference layer, a barrier layer, a magnetic buffer layer, and a free layer sequentially stacked, wherein the magnetic buffer layer has a stronger ductility...
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WO/2021/029148A1 |
In a magnetoresistance device (100) according to one aspect, when expressed in a stoichiometric composition ratio, a metal oxide constituting a metal oxide layer (4) has a higher oxygen proportion than the sum of proportions of metal ele...
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WO/2021/024870A1 |
The present invention addresses the problem of providing a magnetoresistive element in which a ferromagnetic fixed layer, a ferromagnetic free layer, and a protective layer are laminated in order, wherein the magnetic field on the magnet...
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WO/2021/024758A1 |
This magnetic sensor device comprises a magnet that generates a magnetic field, and a magnetic resistance effect element disposed in a longitudinal direction that is orthogonal to a conveyance direction of an article to be sensed. In the...
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WO/2021/024129A1 |
A memory structure is provided that avoids high resistance due to the galvanic effect. The high resistance is reduced and/or eliminated by providing a T-shaped bottom electrode structure of uniform construction (i.e., a single piece). Th...
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WO/2021/022640A1 |
A magnetic sensor manufacturing method, a magnetic sensor, and an electronic device. A magnetoresistor array on a growth substrate (1) is combined with a receiving substrate (4); the growth substrate (1) is selectively irradiated by lase...
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WO/2021/021343A1 |
One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) st...
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WO/2021/020736A1 |
Disclosed are a synthetic antiferromagnetic material using RKKY interaction and a multibit memory using the synthetic antiferromagnetic material that is formed. The synthetic antiferromagnetic material has a non-magnetic metal layer as a...
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WO/2021/021486A1 |
A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a s...
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WO/2021/018258A1 |
A manufacturing method for a Magnetic Tunnel Junction (MTJ). The manufacturing method comprises steps for forming a reference layer (10), a barrier layer (20), and a free layer (30). The step for forming the barrier layer (20) comprises:...
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WO/2021/019853A1 |
This magnetic field measurement device comprises: a magnetic sensor 1 made of a soft magnetic material, the magnetic sensor 1 having a long direction and a short direction, having uniaxial magnetic anisotropy in the direction intersectin...
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