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Matches 1 - 50 out of 20,727

Document Document Title
WO/2021/086429A1
A memory device includes a cross-point array of spin-torque transfer MRAM cells. First rail structures laterally extend along a first horizontal direction. Each of the first rail structures includes a vertical stack including, from botto...  
WO/2021/084366A1
A modified double magnet tunnel junction (mDMTJ) structure (100) is provided which includes a non-magnetic, spin-conducting metallic layer (106) sandwiched between a magnetic free layer (108) and a first tunnel barrier layer (104); the f...  
WO/2021/085642A1
Provided are a tunnel junction laminated film having high thermal stability, and a magnetic memory element and a magnetic memory using a tunnel junction laminated film. A tunnel junction laminated film 1 includes a recording layer 14 hav...  
WO/2021/077756A1
The present disclosure provides a manufacturing method including an MRAM bottom electrode manufacturing process, and an MRAM device. The manufacturing method comprises: providing a substrate, the substrate comprising a metal interconnect...  
WO/2021/076203A1
A film stack for a magnetic tunnel comprises a substrate, a magnetic reference layer disposed over the substrate, and a tunnel barrier layer disposed over the magnetic reference layer. The film stack further comprises a magnetic storage ...  
WO/2021/075343A1
Provided are a magnetic device having a simple configuration and a computing apparatus. A magnetic device according to an embodiment comprises a first electrically conductive portion, a first magnetic layer, a second magnetic layer, a se...  
WO/2021/066100A1
Provided is a driving method of a simplified synapse circuit. When a first pre-spike pulse precedes a first post-spike pulse, a second pre-spike pulse from an input circuit 20a is used as a time window in which writing of a connection we...  
WO/2021/063370A1
Disclosed are a magnetic memory and a preparation method for the magnetic memory. The magnetic memory comprises a heavy metal layer, a metallic thin film layer, and a magnetic tunnel junction (MTJ) layer. The metallic thin film layer is ...  
WO/2021/066743A1
A spin-orbit torque device 100 is described. In an embodiment, the spin-orbit torque device 100 comprises: a functionally graded magnetic layer 104, the functionally graded magnetic layer 104 having a switchable magnetisation direction a...  
WO/2021/059751A1
[Problem] To detect extremely weak magnetic fields by efficaciously reducing irregular noise. [Solution] A magnetic sensor 1, comprising a magnetoresistive strip S made of a plurality of magnetoresistive elements R arranged in the y-dire...  
WO/2021/058932A1
A semiconductor device (110) which comprises a substrate (112) and a plurality of layers (113a, 113b) of semiconductor material. A primary region (1114) is provided which has a primary contact (C) associated therewith. The device include...  
WO/2021/056483A1
An MTJ unit, a VCMA driving method and an MRAM, wherein in the MTJ unit, there is an included angle between a stable magnetic moment direction of a free layer (101) and a magnetic moment direction of a reference layer (103), and the incl...  
WO/2021/059114A1
A hardened gap fill dielectric material that has improved chemical and physical properties is formed laterally adjacent to a multilayered magnetic tunnel junction (MTJ) pillar and a top electrode structure of a memory structure. The hard...  
WO/2021/055197A1
A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etc...  
WO/2021/055113A1
An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices. ...  
WO/2021/051969A1
The present invention provides a method for manufacturing a magnetic tunnel junction (MTJ). The method comprises: providing a substrate, and successively depositing a bottom electrode material layer, an MTJ material layer, a metal hard m...  
WO/2021/055487A1
This invention describes a thermoelectric energy generation device based on the ExB drift in a semiconductor. The material is in depletion mode to avoid cancellation of the electric field by space charges. Under ideal, infinite mobility,...  
WO/2021/053455A1
A method for forming an MRAM device includes: forming MTJs (202) on interconnects (106) embedded in a first dielectric (102); depositing an encapsulation layer (204) over the MTJs (202); burying the MTJs (202) in a second dielectric (206...  
WO/2021/053423A1
Magnetic structures including magnetic inductors and magnetic tunnel junction (MTJ)-containing structures that have tapered sidewalls are formed without using an ion beam etch (IBE). The magnetic structures are formed by providing a mate...  
WO/2021/052009A1
A magnetic tunnel junction (MTJ) bottom electrode and a manufacturing method therefor. The MTJ bottom electrode comprises a bottom electrode substrate layer and a bottom electrode buffer layer laminated to each other. The lower surface o...  
WO/2021/042834A1
The present invention provides an electrode assembly preparation method, comprising: providing a substrate having a through hole, a diffusion blocking layer being provided on the sidewall of the through hole; filling the through hole wit...  
WO/2021/045801A1
A spin-transfer torque (STT) magnetoresistive memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junction include...  
WO/2021/041735A1
A magnetic memory array having an epitaxially grown vertical semiconductor selector connected with a memory element via a bottom electrode such as TaN. An electrically conductive contact such as tungsten (W) or TaN can be included betwee...  
WO/2021/038397A1
A dielectric material structure is formed laterally adjacent to a bottom portion of a bottom electrode metal-containing portion that extends upward from an electrically conductive structure that is embedded in an interconnect dielectric ...  
WO/2021/040797A1
The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical T...  
WO/2021/016837A8
Provided in the present application are a magnetic tunnel junction, a manufacturing method, a spin diode, and a memory. With respect to the problem of a low tunnel polarization current transmission rate and a large RA of a conventional s...  
WO/2021/028334A1
The present invention relates to a method for producing a printed magnetic functional element, in which a substrate (1) is provided on one surface with at least one contact (2) made of an electrically conductive material. Subsequently, a...  
WO/2021/027404A1
The present invention provides a magnetic tunnel junction, at least comprising a reference layer, a barrier layer, a magnetic buffer layer, and a free layer sequentially stacked, wherein the magnetic buffer layer has a stronger ductility...  
WO/2021/029148A1
In a magnetoresistance device (100) according to one aspect, when expressed in a stoichiometric composition ratio, a metal oxide constituting a metal oxide layer (4) has a higher oxygen proportion than the sum of proportions of metal ele...  
WO/2021/024870A1
The present invention addresses the problem of providing a magnetoresistive element in which a ferromagnetic fixed layer, a ferromagnetic free layer, and a protective layer are laminated in order, wherein the magnetic field on the magnet...  
WO/2021/024758A1
This magnetic sensor device comprises a magnet that generates a magnetic field, and a magnetic resistance effect element disposed in a longitudinal direction that is orthogonal to a conveyance direction of an article to be sensed. In the...  
WO/2021/024129A1
A memory structure is provided that avoids high resistance due to the galvanic effect. The high resistance is reduced and/or eliminated by providing a T-shaped bottom electrode structure of uniform construction (i.e., a single piece). Th...  
WO/2021/022640A1
A magnetic sensor manufacturing method, a magnetic sensor, and an electronic device. A magnetoresistor array on a growth substrate (1) is combined with a receiving substrate (4); the growth substrate (1) is selectively irradiated by lase...  
WO/2021/021343A1
One or more embodiments described herein generally relate to patterning semiconductor film stacks. Unlike in conventional embodiments, the film stacks herein are patterned without the need of etching the magnetic tunnel junction (MTJ) st...  
WO/2021/020736A1
Disclosed are a synthetic antiferromagnetic material using RKKY interaction and a multibit memory using the synthetic antiferromagnetic material that is formed. The synthetic antiferromagnetic material has a non-magnetic metal layer as a...  
WO/2021/021486A1
A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a s...  
WO/2021/018258A1
A manufacturing method for a Magnetic Tunnel Junction (MTJ). The manufacturing method comprises steps for forming a reference layer (10), a barrier layer (20), and a free layer (30). The step for forming the barrier layer (20) comprises:...  
WO/2021/019853A1
This magnetic field measurement device comprises: a magnetic sensor 1 made of a soft magnetic material, the magnetic sensor 1 having a long direction and a short direction, having uniaxial magnetic anisotropy in the direction intersectin...  
WO/2021/016837A1
Provided in the present application are a magnetic tunnel junction, a manufacturing method, a spin diode, and a memory. With respect to the problem of a low tunnel polarization current transmission rate and a large RA of a conventional s...  
WO/2021/012940A1
Provided are a magnetic sensor and a manufacturing method thereof. The magnetic sensor includes at least one magnetic sensor structure, wherein, each magnetic sensor structure includes at least one magnetic sensor group (10), each magnet...  
WO/2021/014810A1
This non-volatile memory cell is configured of a non-volatile memory element 50 of a variable resistance type and a transistor TR for selection, wherein one terminal of the non-volatile memory element 50 is connected to one source/drain ...  
WO/2021/011144A1
Disclosed herein are exemplary magnetic tunnel junction structures for magnetic random access memory applications. A magnetic tunnel junction stack includes a structure blocking layer and a magnetic reference layer. The magnetic referenc...  
WO/2021/006219A1
A magnetic element (100) according to an embodiment comprises: a wiring layer (10) which extends in a first direction (x) and includes a ferromagnetic body; and a nonmagnetic layer (20) which is laminated in a second direction (z), onto ...  
WO/2021/000748A1
Provided is a magnetic tunnel junction, comprising a reference layer, a tunnel layer, a free layer, a covering layer, a polarization layer, and a first coupling layer that are sequentially arranged in a stacked manner, wherein the refere...  
WO/2021/002115A1
[Problem] To provide a random number generating unit and a computing system using the same, the random number generating unit comprising a magnetic tunnel junction element and enabling development of characteristics required for executio...  
WO/2021/000747A1
Provided are a magnetic storage device based on a spin orbit torque, and an SOT-MRAM storage unit. The magnetic storage device comprises: a spin orbit torque supply line, a magnetic tunnel junction located on a surface of one side of the...  
WO/2020/258799A1
The present invention provides a method of preparing a self-aligning MRAM bottom electrode, comprising: providing a substrate, said substrate sequentially comprising a metal interconnect layer, a first barrier layer, and a dielectric lay...  
WO/2020/259220A1
A method of preparing an MRAM bottom electrode (208), comprising: (S101) providing a substrate, said substrate sequentially comprising a metal interconnect layer (201), a first barrier layer (202), and a dielectric layer (203), a bottom ...  
WO/2020/264349A1
A magnetic memory array having a source-plane electrically connected with an array of channel selectors in two-dimensions. The array of channel selectors can be arranged in rows and columns with both the rows and columns being electrical...  
WO/2020/261736A1
In the present invention, with regard to a selection element that is provided with a plurality of switch layers and that performs selection control in accordance with an applied voltage, the usage-possible period of the selection element...  

Matches 1 - 50 out of 20,727