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Matches 1 - 50 out of 8,648

Document Document Title
WO/2021/084841A1
A resistance element includes a resistive film, in which the resistive film is adjacent to a protrusion formed on a surface of a semiconductor substrate, the protrusion including a step traversed by the resistive film.  
WO/2021/087285A1
A configurable capacitance device includes a semiconductor substrate including a plurality of integrally formed capacitors; and a separate interconnect structure coupled to the semiconductor substrate, wherein the separate interconnect s...  
WO/2021/079131A1
An electronic circuit comprises a first resistor (1) and a second resistor (2). The first resistor comprises: a first sheet (10) of resistive material; and a first pair (11, 12) of conductive contacts, each arranged in electrical contact...  
WO/2021/080690A1
A method of plasma processing that includes maintaining a plasma processing chamber between 10 °C to 200 °C, flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of...  
WO/2021/073820A1
The invention relates to a sensor element for measuring a temperature, which sensor element has at least one support layer (2), said support layer (2) having a top side (2a) and a bottom side (2b), at least one functional layer (5), said...  
WO/2021/064547A1
Three-dimensional capacitor components (101) are described which comprise a substrate (103) having a textured (contoured) surface and a stack of layers formed conformally over the textured surface to constitute a capacitive stack structu...  
WO/2021/055000A1
A method comprises first generating a plane wave light beam. At least one orbital angular momentum is applied to the plane wave light beam to generate and OAM light beam. Transitions of electrons between quantized states within a semicon...  
WO/2021/053013A1
A nanowire structure (5) is manufactured by forming islands (30a, 30b) of conductive material on a substrate (10-20), and a conductive sacrificial layer (40) in the space (35) between conductive islands. The conductive islands (30a,30b) ...  
WO/2021/054004A1
A storage element according to one embodiment comprises: a first electrode; a second electrode; a storage layer provided between the first electrode and the second electrode and containing at least copper, aluminum, zirconium and telluri...  
WO/2021/039988A1
A conductive-bridge memory device comprises a memory cell that includes: a first metal layer 11; a second metal layer 12; a first insulation body layer 13 having a first surface 13a facing the first metal layer 11 and a second surface 13...  
WO/2021/041027A1
A method of forming an array of capacitors comprises forming a vertical stack above a substrate. The stack comprises a horizontally- elongated conductive structure and an insulator material directly above the conductive structure. Horizo...  
WO/2021/032981A1
A thin-film electronic component includes a first terminal, a second terminal, and a first current path between the first terminal and the second terminal, wherein the first current path is formed from a first segment of a first material...  
WO/2021/032979A1
A thin-film resistor and a method for fabricating a thin-film resistor are provided. The thin-film resistor comprises a first terminal, a second terminal, and a resistor body providing a resistive current path between the first terminal ...  
WO/2021/025724A1
A process of forming a metal-insulator-metal (MIM) capacitor may be incorporated into a process of forming metal bond pads connected directly to a top metal interconnect layer (e.g., Cu MTOP). The MIM capacitor may include a dielectric l...  
WO/2021/014810A1
This non-volatile memory cell is configured of a non-volatile memory element 50 of a variable resistance type and a transistor TR for selection, wherein one terminal of the non-volatile memory element 50 is connected to one source/drain ...  
WO/2021/014334A1
A back-end-of-line (BEOL) compatible metal-insulator-metal on-chip decoupling capacitor (MIMCAP). The BEOL compatible process includes a thermal treatment for inducing an amorphous-to-cubic phase change in the insulating layer (102) of t...  
WO/2021/009386A1
A method for manufacturing a metallized film is provided, comprising the steps: a) Deposition of at least one pre-nucleation layer (1) on at least one main surface (2´) of a polymer based substrate (2) by magnetron sputtering, b) Deposi...  
WO/2021/011019A1
In some embodiments, integrated inductors may be built using processes for forming interconnects of semiconductor devices without requiring additional process steps. Integrated inductor coils may be formed by, for example, shunting an ov...  
WO/2021/006989A1
A memory cell comprises a capacitor comprising a first capacitor electrode having laterally-spaced walls, a second capacitor electrode comprising a portion above the first capacitor electrode, and capacitor insulator material between the...  
WO/2021/003635A1
A 3D capacitor (1195) for a 3D memory device (100) and a fabrication method which includes forming, on a first side (430-1) of a first substrate (430), a peripheral circuitry (400) having a plurality of peripheral devices (450), a first ...  
WO/2020/260747A1
The present invention relates to s capacitor structure implemented using a semiconductor process. The capacitor structure comprises a plurality of interdigitated positive and negative electrode fingers separated by a dielectric material,...  
WO/2020/263635A1
Capacitor structures including a first island of a first conductive region and a second island of the first conductive region having a first conductivity type, an island of a second conductive region having a second conductivity type dif...  
WO/2020/261736A1
In the present invention, with regard to a selection element that is provided with a plurality of switch layers and that performs selection control in accordance with an applied voltage, the usage-possible period of the selection element...  
WO/2020/261191A1
An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. E...  
WO/2020/237345A1
An electronic circuit for thin-film transistors, the circuit including: a driving TFT; an input signal; a compensation TFT provided between gate and source terminals of the driving TFT; a storage TFT provided between the input signal and...  
WO/2020/235591A1
The purpose of the present invention is to provide a novel variable resistance device, the resistance state of which is variable. Consequently, one of typical variable resistance devices according to the present invention is provided w...  
WO/2020/124225A9
The present application relates to thin film transistors having a semiconducting channel comprising a network of carbon nanotubes that are electrically coupled to a source electrode and a drain electrode and electrically insulated from, ...  
WO/2020/213240A1
In order to improve memory access parallelism without sacrificing the operation margin, a storage unit is provided with a plurality of first wires extending in a first direction, a plurality of second wires extending in a second directio...  
WO/2020/209894A1
A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) including IC elements, e.g., memory components. A first contact etch stop layer is formed over the IC elements. A TFR layer stack including a TFR e...  
WO/2020/207988A1
Three-dimensional capacitive structures (150) may be produced by forming a capacitive stack (153-155) conformally over pores (151) in a region (152a) of porous anodic oxide. The porous anodic oxide region is provided on a stack of electr...  
WO/2020/201547A1
The capacitor comprises: a first porous semiconductor with an average pore size ranging between 20 nm and 200 nm, preferably between 40 nm and 100 nm, and at least one second electric conductor, wherein the second electric conductor infi...  
WO/2020/205752A1
A microelectronic device (100) contains a high voltage component (104) having an upper plate (132) and a lower plate (130). The upper plate is isolated from the lower plate by a main dielectric (136) between the upper plate and low volta...  
WO/2020/203220A1
Provided is a logic integrated circuit wherein a read/write control line is connected to a first circuit and a second circuit, a switch cell array is connected to the first circuit, and a logic element is connected to the second circuit,...  
WO/2020/204415A1
A composite element according to an embodiment of the present invention comprises: a stacked body; a capacitor portion provided in the stacked body; an overvoltage protection portion formed apart from the capacitor portion in the stacked...  
WO/2020/195918A1
The present invention provides a non-linear resistance element provided with a first electrode made of a metal nitride, a first intermediate layer made of a metal, a non-linear resistance layer made of an amorphous chalcogenide thin film...  
WO/2020/190467A1
An apparatus including a dielectric layer; and a set of thin-film resistors arranged in a row extending in a first direction on the dielectric layer, wherein lengths of the set of thin-film resistors in a second direction substantially o...  
WO/2020/144223A3
Method for forming product structure having porous regions and lateral encapsulation A method for fabricating a structure, the structure comprising: - an insulating layer (201), - a first metal layer (203) above a first portion of the in...  
WO/2020/179199A1
In this non-volatile memory device (100), inside a storage area (60), a first lower layer metal wiring (20), a bottom plug (30), a variable resistance element (40), a top plug (32), and a first upper layer metal wiring (23) are formed in...  
WO/2020/166073A1
According to an embodiment, a nonvolatile semiconductor storage device is provided with: a plurality of first wiring layers extending in a first direction; a plurality of second wiring layers extending over the plurality of first wiring ...  
WO/2020/139457A9
An inductor or transformer with the inductor can include one or more windings split into strands along a radial path of the winding and provide for a more uniform current distribution across a width of the winding. The winding(s) can com...  
WO/2020/162459A1
The present invention provides a capacitor including: a base material including a pore structure part; a metal layer provided on one main surface of the base material; an extended layer provided on the metal layer; a lower electrode laye...  
WO/2020/154229A1
Some embodiments include an integrated assembly having first electrodes with top surfaces, and with sidewall surfaces extending downwardly from the top surfaces. The first electrodes are solid pillars. Insulative material is along the si...  
WO/2020/148516A1
Briefly, embodiments of claimed subject matter relate to devices and methods for formation of ferroelectric materials utilizing transition metals, transition metal oxides, post transition metals, and/or post transition metal oxides, whic...  
WO/2020/144568A1
RC architectures (1) are described which comprise a substrate (2) provided with a capacitor having a thin-film top electrode portion (7) at a surface of the substrate on one side (2a) thereof. The resistance provided in series with the 3...  
WO/2020/144223A2
Method for forming product structure having porous regions and lateral encapsulation A method for fabricating a structure, the structure comprising: - an insulating layer (201), - a first metal layer (203) above a first portion of the in...  
WO/2020/145253A1
A switching element that has reduced switching voltage and leakage current and that demonstrates high reliability and low power consumption is achieved as a result of comprising: a first insulating layer in which first wiring mainly cons...  
WO/2020/136974A1
This resistance-variable nonvolatile memory element (20) comprises: a first electrode (2); a second electrode (4); and a resistance-variable layer (3) disposed between the first electrode (2) and the second electrode (4) and having a res...  
WO/2020/137912A1
A secondary battery (100) according to the present invention comprises a first electrode (10) and a second electrode (20); and a film-like first resin sheet (31) and/or a film-like second resin sheet (32) that contains a solid electrolyt...  
WO/2020/139626A1
Methods and apparatus for a magnetized substrate carrier apparatus are described herein. In some embodiments, a substrate carrier apparatus includes: a carrier plate having a support surface to support a substrate, a mask assembly dispos...  
WO/2020/139457A1
An inductor or transformer with the inductor can include one or more windings split into strands along a radial path of the winding and provide for a more uniform current distribution across a width of the winding. The winding(s) can com...  

Matches 1 - 50 out of 8,648