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WO/2022/271744A1 |
A technology is described for a Photonic Integrated Circuit (PIC) radio frequency (RF) oscillator. The PIC RF oscillator can comprise an optical gain media coupled to a first mirror and configured to be coupled to the PIC. The PIC can co...
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WO/2022/270474A1 |
The present invention makes it possible to output processing light and guiding light using a simple configuration. A laser device 1A comprises: light emitting elements LD1 to LD3; a processing power supply 31 for supplying power for outp...
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WO/2022/266962A1 |
An electrically driven single-photon source (100), comprising an electrical injection laser (10) and a cavity two-level structure (20), the cavity two-level structure (20) having only one quantum dot (O); the cavity two-level structure (...
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WO/2022/268128A1 |
A laser (10), comprising a tube housing, an upper cover assembly, and a plurality of light emitting assemblies (103), wherein the tube housing comprises a bottom plate (101) and a frame (102); the frame (102) is provided on the bottom pl...
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WO/2022/267356A1 |
An external cavity laser (100, 200), comprising a resonant cavity, the resonant cavity comprising a first cavity surface (11) and a second cavity surface (61). A gain chip (1) is provided in the resonant cavity; a focusing lens (4) is fu...
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WO/2022/271874A1 |
A method of rapid coherent synthetic wavelength interferometric absolute distance measurement includes receiving, from an optical system, an image from an object scene of at least two distinct wavelengths of light, each wavelength's ligh...
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WO/2022/265693A1 |
Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser, a head gimbal assembly for mounting a vertical cavity surface emitting laser, and devices incorporating such articles. In an embodiment, ...
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WO/2022/264854A1 |
[Problem] To provide a method for producing a semiconductor light-emitting element which suppresses deactivation of a p-type group III nitride semiconductor when a film of an n-type group III nitride semiconductor is formed on the p-type...
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WO/2022/264347A1 |
An optical semiconductor of the present disclosure comprises: a semiconductor substrate (1) of a first conductance type; a stripe-shaped mesa structure (6) comprising a laminate of a cladding layer (2) of the first conductance type, an a...
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WO/2022/264210A1 |
This semiconductor laser device (100, 101, 102) comprises a substrate (51), a semiconductor laser element (50) that is disposed on the substrate (51) and integrated into a single chip, a substrate electrode (54) and an electrode (52) tha...
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WO/2022/264954A1 |
This semiconductor device comprises: a semiconductor substrate that has a main substrate, a base semiconductor section positioned above the main substrate, and a hole passing through the main substrate in the thickness direction thereof;...
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WO/2022/264972A1 |
This chip-on-submount comprises, for example: a submount; a coating layer provided on the submount and intersecting a first direction; a laser element having a light emitting unit positioned at an intermediate portion of a second directi...
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WO/2022/261835A1 |
The present application provides a light emitting device and a control method therefor, a distance measuring device, and a movable platform, the light emitting device comprising: one charging circuit, which comprises a power source and a...
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WO/2022/265703A1 |
Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser (VCSEL), a head gimbal assembly for mounting a VCSEL, devices incorporating such articles, and to a process for forming a VCSEL. In an emb...
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WO/2022/266001A1 |
Embodiments of the present disclosure generally relate to a vertical cavity surface emitting laser (VCSEL), a head gimbal assembly for mounting a VCSEL, devices incorporating such articles, and to a process for forming a VCSEL. In an emb...
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WO/2022/263582A1 |
The invention relates to a method for operating at least two laser devices, in particular for producing a display, in which the at least two laser devices produce a sequence of light spots, in particular of different brightness. In a fir...
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WO/2022/264893A1 |
A semiconductor laser body comprising a base semiconductor portion and a compound semiconductor portion positioned on the base semiconductor portion and including a GaN-based semiconductor. The base semiconductor portion includes a first...
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WO/2022/264202A1 |
An objective of the present invention is to suppress a decrease in laser output due to optical axis misalignment between a laser unit waveguide and an EA unit waveguide in a semiconductor laser. The configuration of the present invention...
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WO/2022/259986A1 |
A light-emitting device (10) of the present invention comprises: a base (20) having a main surface (21); a plurality of semiconductor laser chips (60) mounted on the main surface (21); a plurality of mirrors (70) having a reflective surf...
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WO/2022/258757A1 |
A component (10) comprising a carrier (9) and exactly two semiconductor chips (10C) arranged next to one another on the carrier (9) is specified, the exactly two semiconductor chips (10C) each being embodied as a double emitter having ex...
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WO/2022/257548A1 |
A laser (10), which relates to the technical field of photoelectricity, and comprises: a bottom plate (101), an annular side wall (102), multiple conductive pins (103) and multiple types of light-emitting chips (104), each type of light-...
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WO/2022/259889A1 |
This light source device (1) comprises: a base (3) having a support unit (10) and a frame (20) provided in the support unit (10); a lid (4) that is fixed in close contact to the frame (20) with a sealing material (7) interposed; and a se...
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WO/2022/261511A1 |
An optical device is provided that includes an active waveguide having a top electrode and a plurality of layers including a gain layer. Configurations are disclosed for the active waveguide to enable amplification of a guided optical wa...
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WO/2022/259101A1 |
A multimode diode laser (with a single transverse mode) is optically locked to a single Whispering Gallery Mode (WGM) of a microresonator via self-injection feedback. The tunability of the WGM-locked laser is achieved by locking the diod...
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WO/2022/259617A1 |
This invention adjusts the delay of light emission from a plurality of light emission elements. This drive circuit comprises a plurality of row drive signal delay units, a plurality of column drive signal delay units, a plurality of row ...
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WO/2022/259448A1 |
This semiconductor laser comprises, above a substrate (101), an active layer (103) that extends in the waveguide direction and that is formed in a core shape. The semiconductor laser also comprises a diffraction grating (110) in a resona...
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WO/2022/259048A1 |
A coherence reconstruction apparatus generates measurements of atmospheric turbulence from light reflected by a target. The apparatus is in communication with a coherent beam combining (CBC) system which illuminates a target with one or ...
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WO/2022/259903A1 |
A semiconductor light-emitting device (10) comprises a stem (20), a light-emitting module (30), and an enclosure member (40). The stem (20) includes an electrically conductive base (22) and an electrically conductive heatsink (24) vertic...
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WO/2022/258767A1 |
The present invention relates to a heating station (1) for a container-manufacturing installation, said heating station (1) comprising a plurality of laser emitters (4) that comprise, respectively, a plurality of laser chips (14) mounted...
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WO/2022/258655A1 |
An integrated optoelectronic device comprises a substrate with a silicon layer that comprises one or more electronic components. An interconnect stack is arranged on the substrate and comprising a plurality of metal levels. An optical wa...
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WO/2022/259349A1 |
The semiconductor laser (10) according to the present invention is provided with the following in the indicated sequence: a first distributed Bragg reflection region (12_2) having a second diffraction grating; a distributed feedback acti...
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WO/2022/253946A1 |
The invention relates to a laser bar with a reduced lateral far-field divergence, in particular a laser bar with a consistent temperature profile in the lateral direction in order to reduce the lateral far-field divergence. A laser bar (...
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WO/2022/253740A1 |
A laser circuit has a current source for delivering current to a laser device. A pulse width modulation laser drive current is used, and the amplitude and duty cycle of the laser drive current is set in dependence on an estimated junctio...
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WO/2022/255146A1 |
Provided is a new configuration for suppressing the emission of laser light toward the side of a light emitting device. A light emitting device 10 comprises: a substrate 12; a light source 14 which is placed on the substrate and which em...
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WO/2022/255361A1 |
In order to be able to increase the maximum operation temperature of a quantum cascade laser in the THz range, this quantum cascade laser element (1000) has a semiconductor superlattice structure that has an active range (100) that relea...
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WO/2022/254770A1 |
[Problem] To provide a semiconductor light emitting element which has excellent productivity and which can perform positioning with high accuracy between a current injection region and a lens, and to provide a manufacturing method of sem...
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WO/2022/253851A1 |
The invention relates to an illumination device having a housing with a light-exit region (16) and an assembly element (14) arranged below the light-exit region (16). A conversion element (12) is arranged on the assembly element (14) and...
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WO/2022/254857A1 |
This optical module comprises a base part and a filter. A first main surface includes a first region and a second region. A first light, a second light, and a third light are multiplexed into a first multiplexed light in the first region...
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WO/2022/254682A1 |
This semiconductor optical device comprises: a lower cladding layer (102) formed on a substrate (101); a first semiconductor layer (103) composed of a first conductivity-type group III-V compound semiconductor and formed on the lower cla...
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WO/2022/255252A1 |
The semiconductor device comprises a base substrate (UK), a first light-reflecting portion (RF) positioned above the base substrate (UK), a first mask (6) positioned above the first light-reflecting portion (RF), a base semiconductor por...
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WO/2022/255829A1 |
The present invention relates to a laser diode package comprising: a ceramic substrate (110) formed in a cube shape; and a laser diode (120) mounted on one surface of the ceramic substrate (110), wherein the ceramic substrate (110) is mo...
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WO/2022/256131A1 |
A laser device for use with a display including a plurality of pixels is disclosed. The laser device includes a gain section and a modulator. The gain section is electrically coupled with a first current or voltage source. The gain secti...
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WO/2022/253656A1 |
An active optical sensor system (2) comprises a first and second light emitter (10a, 10b), a first and a second energy storage element (11a, 11b) and control circuitry (3, 17a, 17b, 18). The control circuitry (3, 17a, 17b, 18) is configu...
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WO/2022/248420A1 |
The invention relates to a method for manufacturing optoelectronic components (10, 11), the method comprising: - providing at least one semiconductor wafer (1), which has a semiconductor layer sequence (2) and a plurality of mutually adj...
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WO/2022/249360A1 |
[Problem] To prevent a decrease in oscillation efficiency of laser beams and a decrease in conversion efficiency of light wavelengths due to thermal interference. [Solution] A laser element according to the present invention is provided ...
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WO/2022/251057A1 |
A synthesizer includes a first resonator mirror, a second resonator mirror, and a gain medium disposed within a laser resonator cavity defined by the first resonator mirror and the second resonator mirror. The synthesizer includes a satu...
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WO/2022/249357A1 |
[Problem] To suppress diffraction loss during laser resonance. [Solution] This laser element comprises: a laminated semiconductor layer that has a first reflection layer for a first wavelength and an active layer that performs surface em...
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WO/2022/250118A1 |
This light source module (100) comprises: a first light emitting element (21), a second light emitting element (22), and a third light emitting element (23) that emit light of wavelengths different from one another; a cladding (3); and a...
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WO/2022/247947A1 |
An optical module (200), comprising a light emitting assembly (400) configured to generate and output signal light and comprising a laser (600). The laser (600) comprises a laser chip (610) configured to generate signal light; and a cera...
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WO/2022/247184A1 |
A tunable laser device, comprising a housing (10), and a light source module (20), an optical processing module (30) and a wavelength locking module (40), which are arranged in the housing (10), wherein the housing (10) has an optical in...
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