| Document |
Document Title |
|
WO/2024/052783A1 |
A semiconductor device includes a doped gallium arsenide (GaAs) substrate, and buffer columns grown or deposited on the doped GaAs substrate. Each of the buffer columns includes NIPI (n-type/intrinsic/p-type/intrinsic) or NIPIN (n- type/...
|
|
WO/2024/052198A1 |
The invention provides a light generating system (1000) comprising a first light generating device (110), a luminescent body (1200), a thermally conductive element (500), and an axicon-like optical element (400); wherein: (A) the first l...
|
|
WO/2024/052645A1 |
An electrical contact for a semiconductor device, and a method of forming an electrical contact is disclosed. The electrical contact comprises a perimeter area, an aperture located within the perimeter area and two or more electrical tra...
|
|
WO/2024/053314A1 |
This semiconductor light emitting device comprises: a plurality of iPM lasers that each have a first surface and a second surface opposite the first surface, and that output light from the first surface; and a drive circuit that supplies...
|
|
WO/2024/053031A1 |
This method for manufacturing an optical transmission device of the present disclosure includes: a step for disposing, on a sub-mount (40), an optical semiconductor device (1) equipped with a semiconductor laser (2) formed on a semicondu...
|
|
WO/2024/048882A1 |
The present invention relates to a laser device manufacturing method. The disclosed present invention comprises the steps of: laminating a first conductive clad layer, an active layer, a second conductive clad layer, and an ohmic contact...
|
|
WO/2024/045607A1 |
A giant cavity surface emitting laser, comprising: a giant cavity (20); a lower Bragg reflection layer (10), which is located on one side of the giant cavity (20); and an upper Bragg reflection layer (30), which is located on the side of...
|
|
WO/2024/046686A1 |
The invention relates to a method for laser projection and to a laser device (10) for carrying out said method. According to the invention, the method involves using a laser device (10) comprising a laser generation unit (12) by means of...
|
|
WO/2024/047917A1 |
The present invention provides a laser diode having a low oscillation threshold current and drive voltage. This laser diode comprises a nitride semiconductor substrate containing Al, and a semiconductor lamination part disposed on the ni...
|
|
WO/2024/048747A1 |
An embodiment of the present disclosure provides a planar light wave circuit-type filter (213) having a small loss and a high rectangularity in a filter shape. The planar light wave circuit-type filter (213) for multiplexing a plurality ...
|
|
WO/2024/047139A1 |
A tunable laser comprising a first wafer, a second wafer, and an optical cavity. The first wafer is of a first semiconductor material. The first wafer supports an optical amplifier and an electro-optically tunable optical filter. The sec...
|
|
WO/2024/044998A1 |
Embodiments of the disclosure relate to semiconductor surface-emitting light sources incorporating random asymmetric cavities. Compared to conventional vertical-cavity surface-emitting lasers (VCSELs), the designs proposed herein generat...
|
|
WO/2024/048420A1 |
[Problem] To stabilize the average power and peak power of oscillating light. [Solution] This laser element comprises: a stacked semiconductor layer comprising a first reflective layer with respect to a first wavelength and an active lay...
|
|
WO/2024/046669A1 |
Besides a method for producing a semiconductor laser device and a semiconductor laser device, an edge emitting semiconductor laser diode is provided with - a semiconductor layer sequence (2) having a first semiconductor layer (3) of a fi...
|
|
WO/2024/048325A1 |
[Problem] To enable a smaller form factor and variable peak power. [Solution] This light source device comprises: a laminated semiconductor layer having an active layer that emits light of a first wavelength, which is a wavelength that c...
|
|
WO/2024/046441A1 |
A packaging structure, an LED device, and a packaging method. The packaging structure comprises a substrate (1), a transparent cover (2), and a dam (3) connected to the substrate (1), and the dam (3), the transparent cover (2), and the s...
|
|
WO/2024/040335A1 |
Excitation used to produce luminescence is cancelled using interference with an excitation cancelling beam by controlling or setting a phase difference. An excitation beam and an excitation cancelling beam are produced from a common sour...
|
|
WO/2024/043316A1 |
Provided is a two-dimensional photonic crystal laser that can make the intensity distribution of light in a cross section of a laser beam nearly uniform. A two-dimensional photonic crystal laser (10) comprises: an active layer (11); a tw...
|
|
WO/2024/041718A1 |
The present disclosure relates to an optical amplifier unit (OAU) comprising two semiconductor optical amplifier chips, a polarization beam splitter, a polarization rotator and one or more variable optical attenuators. The present disclo...
|
|
WO/2024/042015A1 |
A ring waveguide quantum cascade laser (1) based on whispering gallery modes. The ring waveguide (2) is bounded vertically upwards and downwards by refractive index differences between horizontally extending semiconductor layers of a sem...
|
|
WO/2024/042803A1 |
This optical module comprises: a laser diode that emits laser light; a scanning unit that includes a reflection mirror for reflecting the laser light and that oscillates the reflection mirror so as to output the laser light to the outsid...
|
|
WO/2024/043129A1 |
The present invention reduces a change in light quantity caused by a change in light-emitting current of a light-emitting element. This light source device comprises: a plurality of light-emitting elements; a plurality of switch elements...
|
|
WO/2024/044567A2 |
A III-nitride-based vertical cavity surface emitting laser (VCSEL) includes an active region between p-type and n-type layers; and a curved mirror on or above the p-type layer such that the p-type layer is between the active region and t...
|
|
WO/2024/041851A1 |
A self-mixing interferometric, SMI, laser sensor (1) comprises a vertical cavity surface emitting laser (10), VCSEL, configured to emit laser radiation, the VCSEL comprising a first distributed Bragg reflector (11), DBR, a second DBR (12...
|
|
WO/2024/037264A1 |
A linear-light-spot light source emission device, comprising a plurality of vertical-cavity surface-emitting laser chips (101), and a circuit board (102). The circuit board (102) comprises a drive circuit. Each vertical-cavity surface-em...
|
|
WO/2024/040106A1 |
A dual-grating spectral beam combiner includes a series of sources emitting a respective series of diverging laser beams with mutually parallel center rays offset from each other in a one-dimensional array. The laser beam wavelengths are...
|
|
WO/2024/037890A1 |
The invention relates to a radiation-emitting device having a carrier having a principal plane of extent, a radiation-emitting component having a radiation exit surface, an optical element, and at least one positioning element, wherein t...
|
|
WO/2024/038826A1 |
Provided is a prism which has, for example, an entrance surface, a reflection surface, and an exit surface extending in respective differing directions that each intersect a first direction, which changes the direction of travel of light...
|
|
WO/2024/031944A1 |
Disclosed in the present invention are an automatic phase-locked constant-current source circuit and method for driving a tunable laser. The circuit comprises a phase lag circuit, a phase-locked loop, a summator and a voltage-controlled ...
|
|
WO/2024/031810A1 |
A filter index determination method and apparatus, a device, and a computer readable storage medium. The method comprises: on the basis of first data of a filter at a first temperature and preset data of the filter at a second temperatur...
|
|
WO/2024/034166A1 |
An optical device (100) comprises: a first optical functional layer (FL1) which is provided on a first prism (PS1), reflects light of a first wavelength from a first light source (LD1) and transmits light of a second wavelength from a se...
|
|
WO/2024/032888A1 |
The present disclosure relates to optical communications using a spin vertical-cavity surface¬ emitting laser (VCSEL). The disclosure provides a laser apparatus comprising the spin VCSEL, and a light source for optically pumping the spi...
|
|
WO/2024/034480A1 |
The present invention provides a method for producing a bonded wafer for micro LEDs, the method comprising: a step for forming an epitaxial layer by epitaxially growing an AlGaInP first cladding layer, an active layer and a second claddi...
|
|
WO/2024/027248A1 |
A laser (400) and an optical module (200). The laser (400) comprises a gain chip (411), a first wave plate (413), a Faraday magneto-optic crystal (414), a polarization beam combiner (415), a second wave plate (416), a polarization beam s...
|
|
WO/2024/028137A1 |
The invention provides a light generating system comprising a first light generating device, a second light generating device, a first luminescent material, and a control system, wherein: (A) the first light generating device comprises a...
|
|
WO/2024/029182A1 |
This semiconductor laminate comprises a base layer, an active layer, an InP layer, a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. The InP layer has p-type conductivity. The first semiconductor...
|
|
WO/2024/028239A1 |
The invention relates to a light emission system (10, 20) of the spin-LED or spin-laser type, comprising: - a stack (STA) comprising an active layer (AL) and transport layers; - an electrode referred to as anode (An) and an electrode ref...
|
|
WO/2024/029062A1 |
This semiconductor optical device comprises: a first cladding layer (102) that is formed on a substrate (101); a first conduction-type first semiconductor layer (103) that is formed on the first cladding layer (102); an active layer (104...
|
|
WO/2024/027769A1 |
A light source assembly (10) and a display device, relating to the technical field of photoelectricity. The light source assembly (10) comprises: a power supply board (101) and a plurality of lasers (102) secured on the power supply boar...
|
|
WO/2024/028714A1 |
A pulsed laser diode driver includes a laser diode switch and a bypass switch to control a current flow through an inductor to produce a high-current pulse through a laser diode, the high-current pulse corresponding to a peak current of ...
|
|
WO/2024/029255A1 |
An electronic device according to an embodiment of the present invention comprises: a chip; a semiconductor substrate; a bump; an insulating film; and a metal film. The chip is provided with a semiconductor laser. The semiconductor subst...
|
|
WO/2024/028745A1 |
A semiconductor optical amplifier (1) for laser devices (100, 200), particularly of the quantum cascade type, which is adapted to emit luminous radiation when subjected to an electric current and which comprises: a quantum well structure...
|
|
WO/2024/027157A1 |
Disclosed in the present invention is a laser gas sensor packaging structure, comprising a base. Two insulators are embedded in the base; connecting columns are mounted on both the insulators; a heating element is mounted between the two...
|
|
WO/2024/024234A1 |
The present invention provides a semiconductor laser device comprising: a semiconductor laser element including a plurality of mesa portions; and a submount including a plurality of recesses where the plurality of mesa portions are arran...
|
|
WO/2024/024190A1 |
This photonic crystal surface-emitting laser comprises an active layer, a photonic crystal layer, and a first semiconductor layer, wherein: the photonic crystal layer has a base material and a plurality of holes periodically arranged in ...
|
|
WO/2024/023655A1 |
A light source device includes; a surface emitting laser to emit a light beam to a subject; and circuitry to drive the surface emitting laser to emit a light having a time width, a light intensity of which is 1/e2 with respect to a peak ...
|
|
WO/2024/024734A1 |
This light-emitting module comprises: a support substrate having a plurality of placement surfaces arranged side by side in a first direction; a plurality of light-emitting devices, the corresponding light-emitting devices being disposed...
|
|
WO/2024/023005A1 |
The invention relates to an optoelectronic module (1) comprising a substrate (2), a radiation-emitting semiconductor element (3) on the substrate, and an optical element (4) in a beam path of the semiconductor element (2), wherein at lea...
|
|
WO/2024/024233A1 |
This semiconductor laser device comprises: a semiconductor laser element having a plurality of mesa sections; and a submount having recesses in which the plurality of mesa sections are disposed. The recesses each have a wiring section pr...
|
|
WO/2024/024575A1 |
[Problem] To provide an optical device and a distance measuring device capable of suitably detecting an emission timing of oscillating light. [Solution] An optical device according to the present disclosure comprises: a light emitting el...
|
