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WO/2023/153518A1 |
Provided is an EA-DFB laser assembly equipped with an SOA, which enables miniaturization and makes it possible to prevent band deterioration caused by crosstalk between wires. An optical transmitter according to the present disclosure us...
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WO/2023/151842A1 |
The invention relates to a semiconductor laser (1), wherein a radiation guiding element (3) is arranged on a laser diode (2), comprising a material or consisting of a material that can be applied by means of the laser radiation (5) on th...
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WO/2023/153164A1 |
[Problem] To provide: a light-emitting device capable of reducing the influence of an amorphous layer of an optical member on optical properties; a method for manufacturing the light-emitting device; and a distance measurement device. [S...
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WO/2023/152873A1 |
This method for fabricating a nanostructure device (1) comprises: a step for forming a second insulating film (15) on an upper surface of a semiconductor nanostructure substrate, the semiconductor nanostructure substrate comprising a bas...
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WO/2023/152872A1 |
The present invention comprises: a ridge (22) in which an n-type clad layer (14), a lower-side light confinement layer (16), an active layer (18), and an upper-side light confinement layer (20) are laminated in order from the bottom; cur...
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WO/2023/154719A2 |
Semiconductor laser architectures that provide weak index guiding of interband cascade lasers (ICLs) processed on a native III-V substrate and of ICLs grown on GaAs or integrated on GaAs by heterogeneous bonding. Weak index guiding of a ...
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WO/2023/152874A1 |
A nanowire (10) of the present invention is a columnar semiconductor and comprises a hollow portion (12) along the central axis direction of the columnar semiconductor, the central axis of the columnar semiconductor and the central axis ...
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WO/2023/153276A1 |
A semiconductor element according to the present invention is provided, for example, with: a substrate; a plurality of semiconductor layers that are staked on the substrate in a first direction; a body that has an end face in the first d...
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WO/2023/153476A1 |
A light-emitting device production method comprising: a step for preparing a first substrate having a plurality of light-emitting bodies; a step for preparing a second substrate having a conductive first bond section, a first pad section...
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WO/2023/151908A1 |
A laser diode component (1) is described comprising: - a semiconductor layer stack (2) comprising an active zone (4) for emitting laser radiation, - a photonic crystal structure (8) comprising a plurality of structured portions (10), con...
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WO/2023/153084A1 |
The present technology provides a surface emitting laser having a current constriction region, with which it is possible to achieve an increase in output while suppressing an increase in manufacturing cost. The surface emitting laser a...
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WO/2023/153437A1 |
An optical semiconductor element according to the present invention is provided, for example, with: a substrate; a first protrusion part which protrudes from the substrate in a first direction, while having a first mesa that comprises an...
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WO/2023/153035A1 |
This nitride semiconductor light-emitting element (100) comprises: a substrate (1010) comprising GaN; a first clad layer comprising AlGaN disposed above the substrate (101); an active layer (105) disposed above the substrate (101); and a...
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WO/2023/153358A1 |
This laser element production method comprises: a step for preparing a semiconductor substrate that includes a base substrate and a plurality of bar-shaped laminate bodies arranged in a line in a first direction atop the base substrate; ...
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WO/2023/153330A1 |
A nitride-based semiconductor light-emitting element (100) comprises: an N-type cladding layer (102); an N-side guide layer (103) disposed above the N-type cladding layer (102); an active layer (104) disposed above the N-side guide layer...
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WO/2023/151848A1 |
The invention relates to a laser component comprising - a semiconductor laser chip (1) having a laser facet (1a) with an active zone (11), and - an optical element (2) which is mounted after the semiconductor laser chip (1) on the laser ...
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WO/2023/148908A1 |
This optical module comprises: a base (1); a first optical component (2) disposed on a surface of the base (1); a lens component (4) including a lens element (4a), the lens component (4) disposed on the surface of the base (1) so as to f...
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WO/2023/149211A1 |
The present invention addresses the problem of providing: an onboard lighting device that uses excitation light from a solid light source such as a semiconductor light-emitting element to excite a phosphor region and can efficiently guid...
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WO/2023/149087A1 |
Provided is a surface-emitting laser for which it is possible to increase the size of a light emitting portion while suppressing an increase in size as a whole. The surface-emitting laser according to the present technology comprises a...
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WO/2023/149520A1 |
The present invention has: a first semiconductor layer at which is formed a photonic crystal layer that has holes that are arranged in a plane that is parallel to the layer so as to have a two-dimensional periodicity; an active layer tha...
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WO/2023/150223A1 |
Various embodiments set forth a light-emitting device, comprising a single die formed from a portion of a semiconductor substrate of a first conductivity type, a first vertical cavity surface-emitting laser (VCSEL) that is formed from a ...
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WO/2023/147642A1 |
An optical grating comprising a refractive index with a periodic pattern that includes a base period Λ0; a periodic sampling of the base period, with a first period Λ1 and a first duty cycle p1, thereby defining a single-sampled gratin...
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WO/2023/149081A1 |
This semiconductor laser element comprises: a semiconductor laminate that emits a laser beam; an emitting-side protective layer disposed on a laser beam emitting-side end face of the semiconductor laminate; and a non-emitting-side protec...
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WO/2023/145847A1 |
An organic semiconductor laser device with a supercell structure composed of a first short-pitch periodic structure with length WS1, a long-pitch periodic structure with length WL and a second short-pitch periodic structure with length W...
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WO/2023/144344A1 |
The invention relates to a laser package comprising: a laser device which is designed to emit laser radiation through at least one laser facet on a front side surface of the laser device; an electrically conductive heat sink; and a conta...
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WO/2023/143955A1 |
A Method of producing an array of light emitting elements is specified, said method comprising - providing a growth substrate (1), - applying a mask (2) having a plurality of apertures (21) to the growth substrate (1), - growing structur...
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WO/2023/144033A1 |
The invention relates to a laser device (10) comprising a vertical emission semiconductor laser component (12) for emitting laser light (14) and comprising a main body (16) having a first mirror portion, a second mirror portion and an ac...
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WO/2023/144611A1 |
A surface emitting laser includes: multiple active layers; a resonator including a tunnel junction between the multiple active layers; multiple reflectors sandwiching the resonator between the multiple reflectors; and an electrode pair c...
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WO/2023/145764A1 |
An optical module according to one aspect of the present invention comprises: a semiconductor laser element; a plurality of optical filters having periodic transmission characteristics in terms of the frequency of the light, and that res...
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WO/2023/145414A1 |
An optical semiconductor element according to the present invention comprises: a substrate having a (100) plane as a principal surface; a first protruding part that protrudes from the substrate in a first direction, and has a first mesa ...
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WO/2023/145148A1 |
The present technology provides a surface-emitting laser capable of compensating, in terms of the reflectors overall, for material system-based defects of a multilayer film reflector included among the reflectors. The surface-emitting ...
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WO/2023/145271A1 |
Provided is a surface light-emitting element having a configuration which can suppress an increase in an overlap offset between a current injection region of a light-emitting layer and a concave mirror. The present technology provides ...
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WO/2023/143918A1 |
The invention relates to a laser diode component (1) comprising: - a semiconductor layer stack (2) which has an active region (4) for emitting laser radiation; - a photonic crystal structure (7) comprising - a crystalline material (8), -...
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WO/2023/145662A1 |
This optical semiconductor element comprises, for example, a substrate, a first protrusion, and a second protrusion that functions as a position aligner that is used for position alignment with a component different from the optical semi...
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WO/2023/142412A1 |
A high-brightness and high-power semiconductor light-emitting device and a preparation method therefor. The high-brightness and high-power semiconductor light-emitting device comprises: a semiconductor substrate layer (100); a modulation...
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WO/2023/145562A1 |
A semiconductor laser element (1) comprises: a substrate (10); and a semiconductor laminate structure (20) which is formed on one surface of the substrate (10) and in which a plurality of semiconductor layers are laminated. The semicondu...
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WO/2023/142030A1 |
A circuit structure, a transmitting module, a detection apparatus, and a terminal device. The circuit structure comprises a switching device, a laser, and an energy storage element which are stacked, and can be applied in a laser radar. ...
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WO/2023/145416A1 |
An optical semiconductor element according to the present invention comprises: a substrate; a first protruding part that protrudes from the substrate in a first direction, and has a first mesa having a layered structure in which a plural...
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WO/2023/144995A1 |
A laser apparatus (1A) comprises: a first laser element (LD1) of which light emitting points arrayed in a y-axis direction form a first beam group (B1); a second laser element (LD2) of which light emitting points arrayed in the y-axis di...
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WO/2023/145763A1 |
A method for manufacturing a laser element includes: a step of preparing a semiconductor substrate (10) having a base substrate (BK), a first growth-inhibiting part (5F) and a second growth-inhibiting part (5S) adjacent to each other acr...
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WO/2023/144343A1 |
The invention relates to a method for determining a laser light offset in a laser package comprising a support substrate and at least one laser device which is arranged on the support substrate for emitting laser light and which is surro...
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WO/2023/144342A1 |
The invention relates to a laser package comprising: a carrier substrate having at least one electrical contact surface on a top of the carrier substrate; an electrically conductive heat sink located on the at least one electrical contac...
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WO/2023/144960A1 |
According to the present invention, active parts (A) and passive parts (B) are alternately arranged in a first direction on a semiconductor substrate (1) of a first conductivity type. An electrode (2) is provided on each one of the activ...
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WO/2023/139958A1 |
For example, the present invention reduces the inductance between electrodes. The present invention is a semiconductor laser device including: a semiconductor substrate having a first main surface and a second main surface on the oppos...
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WO/2023/141321A1 |
Provided herein is a semiconductor package and method of forming the same. The semiconductor package has a cap including a first window wafer with a first face and opposing second face, a second window wafer, and a perforated spacer wafe...
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WO/2023/139780A1 |
This method for designing a quantum cascade laser device involves designing a quantum cascade laser device having an active region (100) where a plurality of barrier layers (1, 3, 5, 7) and well layers (2, 4, 6) are formed in an alternat...
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WO/2023/139645A1 |
An optical beam scanning device (1) comprises a plurality of light sources (11, 21), a plurality of beam shapers (13, 23), a scanning mirror (40), and a scanning region correcting optical member (45). The plurality of light sources emit ...
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WO/2023/141628A1 |
In some implementations, an optical emitter includes a substrate with a surface that is off-cut relative to an orientation of a crystallographic plane of the substrate; a first set of layers disposed on the substrate and forming an activ...
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WO/2023/140224A1 |
This semiconductor laser device (100) comprises a heat sink (2), and a semiconductor laser element (1) that is joined to the heat sink (2) via a joining member (3) and is provided with a pad electrode (70). The semiconductor laser electr...
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WO/2023/140217A1 |
The present invention comprises: a photonic-crystal surface-emitting laser (PCSEL) element (110) that emits a laser beam (LB); a laser head (24) that condenses the laser beam (LB) with a condensing lens (27) at optical transmission paths...
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