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WO/2019/059338A1 |
The present invention suppresses decrease in airtightness between a cover member and a base member. According to the present invention, a crystal oscillator is provided with: a crystal oscillation element; a cover member and a base membe...
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WO/2019/054349A1 |
This method for producing a crystal oscillator element (10) comprises: a step for preparing a crystal piece (111); a step for providing a central part (117) of the crystal piece (111) with a first excitation electrode (114a); a step for ...
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WO/2019/054238A1 |
[Problem] To improve a Q value of an acoustic wave device in which a piezoelectric material substrate is directly bonded on a support substrate composed of polycrystalline ceramics. [Solution] This acoustic wave device 10 comprises: a pi...
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WO/2019/055787A1 |
A device has a plurality of coils arranged along a perimeter within the device, where each coil has a winding configured to be coupled to a power converter through a resonant capacitor, and forms a resonator with the resonant capacitor. ...
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WO/2019/048736A1 |
The invention relates to a frequency reference oscillator device and method of providing a frequency reference signal. The oscillator device comprises a first oscillator comprising a first resonator having first long-term stability and a...
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WO/2019/048737A1 |
The invention relates to a temperature-compensated microelectromechanical oscillator and a method of fabricating thereof. The oscillator comprises a resonator element comprising highly doped silicon and an actuator for exciting the reson...
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WO/2019/049830A1 |
This filter device (1) is provided with: a substrate (50) which has piezoelectricity; a first filter (10) which comprises an IDT electrode (52) that is provided on the substrate (50); an electrode (30a) for terminals, which is provided o...
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WO/2019/034442A1 |
A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric...
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WO/2019/029911A1 |
A BAW resonator (RES) with reduced losses, an RF filter with a BAW resonator and a method of manufacturing a BAW resonator are provided. The BAW resonator has a bottom electrode layer (BEL), a top electrode layer (TEL) and an acoustic re...
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WO/2019/029912A1 |
An electrically and acoustically improved resonator is provided. The resonator (BAWR) has a center region (CR) and a termination region (TER) surrounding the center region. A trench (TR) in a top electrode (TE), a frame (FR) on the top e...
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WO/2019/025132A1 |
An acoustic filter device comprises a filter chip with filter elements that are arranged in a series signal line as well as in parallel branches connected to a ground termination each. A carrier substrate for the filter chip comprises gr...
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WO/2018/235339A1 |
Provided is a simpler and more highly accurate frequency adjustment method. Disclosed is a method for manufacturing a resonance device that is provided with a resonator having a vibrating section that vibrates in accordance with a voltag...
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WO/2018/230442A1 |
This bonded substrate comprises a quartz substrate, and a piezoelectric substrate which is bonded onto the quartz substrate and on which a surface acoustic wave propagates, the bonding comprising a covalent bonding at a bonding interface...
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WO/2018/218037A1 |
System and apparatus for measuring biopotential and implementation thereof. A device for mitigating electromagnetic interference (EMI) thereby increasing signal-to-noise ratio is disclosed. Specifically, the present disclosure relates to...
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WO/2018/212150A1 |
Provided are a liquid crystal oscillation element, a liquid crystal oscillator, and a method for manufacturing these in which it is possible to achieve a reduction in size while suppressing degradation of oscillation characteristics. Thi...
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WO/2018/212184A1 |
The method for manufacturing the piezoelectric oscillator (1) involves: a step for preparing a piezoelectric vibration element (10) comprising a piezoelectric substrate (11) having a first principal surface (12a) and a second principal s...
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WO/2018/212181A1 |
The present invention is provided with: a base part (50); a plurality of vibration arm parts (60) extending from the base part (50) in a first direction (D1), the vibration arm parts (60) being arranged in a second direction (D2) that in...
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WO/2018/203430A1 |
[Problem] To provide an elastic wave element in which a piezoelectric material substrate and a support substrate are joined together via a joining layer, wherein the elastic wave element has a structure with which it is possible to furth...
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WO/2018/199071A1 |
Provided is an acoustic wave device manufacturing method with which a resist residue is less likely to remain and degradation in electric characteristics is less likely to occur, and which makes it possible to increase productivity. An a...
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WO/2018/198952A1 |
A filter device (100), comprising: a piezoelectric substrate (1); first and second functional elements (S2, S3) disposed on the surface of the piezoelectric substrate (1); a first electroconductive layer (5c) disposed on the surface of t...
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WO/2018/199306A1 |
Provided is a sealing film made of a resin composition comprising a thermosetting resin that has a structural unit represented by formula (1), and an inorganic filler: [in formula (1), X1 denotes a reactive functional group and R1 denote...
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WO/2018/199310A1 |
A sealing film comprising a resin composition which comprises a thermally curable component, an inorganic filler, and a carboxylated elastomer having a carboxy equivalent of 270-4,300 g/eq., wherein the content of the carboxylated elasto...
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WO/2018/182626A1 |
A solidly mounted acoustic resonator, including a first metal region on a substrate, a piezoelectric region over the first metal region, and a second metal region over the piezoelectric region. The second metal region includes an outer f...
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WO/2018/178562A1 |
A method is disclosed for adjusting the stress state of a piezoelectric film (4) having a first stress state at room temperature, the method comprising a step of forming an assembly (1) including a carrier (2) having a thermal expansion ...
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WO/2018/182681A1 |
An apparatus is provided which comprises: a substrate, a piezoelectric resonator separated from a surface of the substrate by a void region, a first electrode coupled to a first surface of the piezoelectric resonator parallel to the subs...
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WO/2018/163860A1 |
Provided is an elastic wave device in which degradation of resonance characteristics does not easily occur. In an end surface reflection type elastic wave device 1 in which an elastic wave is reflected between a first end surface 6c and ...
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WO/2018/159111A1 |
Provided is an acoustic wave device that is capable of achieving miniaturization and high productivity. An acoustic wave device 10 is provided with: a piezoelectric substrate 2 (substrate having piezoelectricity); a first bandpass type f...
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WO/2018/151146A1 |
[Problem] To provide an acoustic wave element which is reduced in size and can be fabricated relatively easily, which can be put to practical use without using harmful substance and can suppress surface acoustic wave transmission loss, w...
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WO/2018/143006A1 |
In this AT-cut quartz oscillation plate wafer, two corners of each of a plurality of base parts which project, toward quartz oscillation plates, from a support part extending along the arrangement direction of the quartz oscillation plat...
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WO/2018/142790A1 |
When an arm part of this tuning fork-type vibrator flexes towards the lid of a package due to an external impact, by allowing a frequency adjustment metal film, from which a portion has been removed, to contact the inner surface of the l...
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WO/2018/135650A1 |
This method for producing an electronic component is characterized by comprising: a first step wherein a base member (137) is provided on a first main surface (132a) of a first substrate (130); a second step wherein the base member (137)...
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WO/2018/122848A1 |
This invention provides electromechanical resonators based on metal chalcogenide nanotubes. The invention further provides methods of fabrication of electromechanical resonators and methods of use of such electromechanical resonators.
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WO/2018/125165A1 |
The RF filters used in conventional mobile devices often include resonator structures, which often require free-standing air-gap structure to prevent mechanical vibrations of the resonator from being damped by a bulk material. A method f...
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WO/2018/125157A1 |
Modern RF front end filters feature acoustic resonators in a film bulk acoustic resonator (FBAR) structure. An acoustic filter is a circuit that includes at least (and typically significantly more) two resonators. The acoustic resonator ...
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WO/2018/116717A1 |
The present invention provides a method for manufacturing an elastic wave device in which breakage and chipping of a piezoelectric substrate do not easily occur. The method for manufacturing an elastic wave device comprises: a step for p...
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WO/2018/116651A1 |
Protruding portions which are formed at the time of frequency coarse adjustment that is performed by irradiating a thick frequency adjustment metal film of a tuning fork-type vibrating reed with a beam in a wafer state, and which protrud...
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WO/2018/100840A1 |
In order to provide an elastic wave device in which burrs attributable to a metal layer such as a wiring electrode and the like are not easily produced, this elastic wave device 1 is provided with: a piezoelectric body 2 having a princip...
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WO/2018/096797A1 |
A piezoelectric monocrystalline substrate 6 is made of LiAO3 (where A is one or more elements selected from the group consisting of niobium and tantalum). A joint layer 3A is made of an oxide of one or more elements selected from the gro...
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WO/2018/095051A1 |
An SMD quartz resonator, comprising a ceramic base (1), the ceramic base (1) being provided with a resonant cavity, characterized in that, a metal coating (3) is disposed on the frame of the ceramic base (1), and a metal cover plate (2) ...
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WO/2018/092872A1 |
A piezoelectric vibration element manufacturing method comprises: a step of forming, from a piezoelectric substrate, an assembly substrate (100) which is provided with a plurality of crosspiece portions (120) extending in a first directi...
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WO/2018/093137A1 |
A surface acoustic wave element package according to the present invention includes: a surface acoustic wave element including a piezoelectric substrate, and including an IDT electrode and a plurality of electrodes formed on the piezoele...
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WO/2018/088093A1 |
Provided are: a method for manufacturing a substrate having exceptional heat dissipation, and little loss with respect to high frequency waves, without requiring a high-temperature process in which diffusion of metal impurities occurs; a...
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WO/2018/085268A1 |
A layer sequence is proposed that comprises first and second layers that are deposited atop one another in alternation, wherein the first layers (SC1, SC2) comprise SiC1 -xHx and the second layers (SOC1, SOC2) comprise SiOC(H).
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WO/2018/079181A1 |
[Problem] To provide a frequency adjustment method for a piezoelectric oscillation device, the method responding to microminiaturization and enabling frequency adjustment without decreasing frequency adjustment accuracy. [Solution] A fre...
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WO/2018/078472A1 |
A superconducting microwave device (400) is provided. A left-handed resonator (215) include at least one unit cell (205). A non-linear dispersive medium (405) is connected to the left-handed resonator (215), such that one end of the left...
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WO/2018/070221A1 |
A production method for a piezoelectric oscillator, the method including: a step for preparing a piezoelectric oscillation element (10) that has a piezoelectric piece (11), a pair of excitation electrodes (14a, 14b) that are respectively...
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WO/2018/070336A1 |
A piezoelectric vibrator (1) is provided with: a piezoelectric vibration element (10); a base member (30) including a first principal surface (32a) on which the piezoelectric vibration element (10) is held by conductive holding members (...
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WO/2018/066653A1 |
[Problem] The objective of the present invention is to provide a method of manufacturing a composite substrate configured to include a piezoelectric layer having a low variation in an amount of Li, and a support substrate. [Solution] Thi...
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WO/2018/063284A1 |
Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various g...
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WO/2018/063299A1 |
A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequen...
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