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WO/2018/063294A1 |
Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI ...
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WO/2018/061356A1 |
The purpose of the present invention is to provide a piezoelectric vibrator, a manufacturing method for a piezoelectric vibrator and an adjustment device which enable the resonance frequency of a piezoelectric vibrator to be adjusted aft...
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WO/2018/057071A1 |
A bulk acoustic wave resonator apparatus includes a resonator member having an annulus shape, and at least one anchor structure coupling the resonator member to a substrate. A perimeter of the resonator member is at least partially defin...
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WO/2018/047876A1 |
The invention comprises: a crystal oscillation element (10) which has a crystal piece (11), a pair of excitation electrodes (14a, 14b) provided so as to face mutually opposite both principal surfaces (12a, 12b) of the crystal piece (11),...
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WO/2018/043496A1 |
Provided is an elastic wave device that can easily perform frequency adjustment of a plurality of band-pass-type filers configured on the same piezoelectric substrate. An elastic wave device 1 is provided with: a first band-pass-type fil...
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WO/2018/038915A1 |
A single-die multi-FBAR (film bulk acoustic resonator) device (200) includes multiple FBARs (202, 204, 206) having different resonant frequencies formed over a single substrate (220). The FBARs include piezoelectric layers (212, 214, 216...
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WO/2018/021296A1 |
An oscillation element comprises a crystal piece, a pair of excitation electrodes, and a pair of pad portions. The crystal piece includes a pair of main surfaces, and a side surface which connects the outer edges of the pair of main surf...
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WO/2018/016169A1 |
Provided is a surface acoustic wave device composite substrate in which a piezoelectric single crystal film is not entirely peeled off even when being heated to 400°C or higher in a step after bonding. The composite substrate is manufac...
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WO/2018/016314A1 |
Provided is a high-performance surface acoustic wave device composite substrate which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joining interface between a piezoelectric crystal fi...
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WO/2018/012279A1 |
The present invention addresses the problem of providing a substrate for surface acoustic wave elements, which has high thermal conductivity. A substrate for surface acoustic wave elements according to the present invention is characteri...
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WO/2018/008651A1 |
The present invention improves the piezoelectric constant of a GaN piezoelectric film. A piezoelectric film which is formed of a gallium nitride crystal having a wurtzite structure, and wherein the gallium nitride crystal contains at lea...
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WO/2018/006883A1 |
A method for preparing a film bulk acoustic wave device by using a film transfer technology comprises: 1) providing an oxide single-crystal substrate (1); 2) implanting ions from an implantation surface (11) into the oxide single-crystal...
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WO/2018/006754A1 |
A contactless adhesive spray system utilized in producing a surface-mount quartz crystal oscillator comprises a full array of substrate bases (1), chips (4), and an adhesive spray system. The full array of substrate bases (1) and the chi...
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WO/2018/006755A1 |
The invention relates to the field of electronic devices, and specifically, to a full-array die attachment device and method utilized in producing a surface-mount quartz crystal oscillator. The full-array die attachment device comprises ...
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WO/2018/005337A1 |
A component (B) is specified which comprises a functional structure (FS) on a carrier (TR) that is spanned by a thin-layer covering (DSA) resting on said carrier. A first wiring layer (VE1) is applied onto or in the thin-layer covering a...
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WO/2018/002440A1 |
The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the ...
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WO/2018/005351A1 |
A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), ...
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WO/2018/003837A1 |
A multiplexer (1) provided with: an LB band filter (10) disposed on a first path linking a common terminal (Port1) and an individual terminal (Port2); an HB band filter (20) disposed on a second path linking the common terminal (Port1) a...
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WO/2017/222990A1 |
Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The...
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WO/2017/221518A1 |
The present invention provides an elastic wave device which achieves miniaturization and does not tend to cause contact between a cover member and an IDT electrode. An elastic wave device 1, wherein an IDT electrode 9 constituting a long...
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WO/2017/218690A1 |
Bandpass filters and methods of designing bandpass filters are disclosed. A bandpass filter includes a plurality of series acoustic resonators connected in series between an input and an output, and a plurality of\ shunt acoustic resonat...
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WO/2017/212774A1 |
Provided is an elastic wave device having excellent moisture resistance. An elastic wave device 1 is provided with: a supporting substrate 2, the upper surface of which is provided with a recessed section 2c; a piezoelectric thin film 4 ...
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WO/2017/212677A1 |
The present invention adjusts resonance frequency without impairing the piezoelectric property of a resonator. The present invention comprises: a step for preparing a lower cover; a step for disposing a substrate such that the lower surf...
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WO/2017/208866A1 |
The present invention is provided with: a crystal oscillation element (100) including a crystal strip (110) that has principal surfaces facing each other, a first excitation electrode (130) and a second excitation electrode (140) provide...
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WO/2017/208568A1 |
The present invention inhibits a resonance frequency from being impacted by an electric charge charged to an insulator layer on a resonator or a conductive layer on the insulator layer. The present invention comprises: a first electrode;...
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WO/2017/208747A1 |
The present invention comprises: preparing an aggregate substrate (10); and forming through-holes (20) and an electrode layer (400) in the aggregate substrate, wherein the electrode layer includes via electrodes respectively provided in ...
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WO/2017/210495A1 |
A method is provided for fabricating piezoelectric plates. A sacrificial layer is formed overlying a growth substrate. A template layer, with openings exposing sacrificial layer surfaces, is formed over the sacrificial layer. An adhesion...
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WO/2017/203173A1 |
The invention relates to a method for healing defects in a layer (10) of composition ABO3 where A consists of at least one element from: Li, Na, K, H, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, ...
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WO/2017/193582A1 |
A packaging structure for a surface acoustic wave filter chip, comprising a substrate (10). The front side of the substrate (10) is provided with a substrate groove (12) and a substrate glue overflow groove (13); a chip (20) is flip-chip...
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WO/2017/192899A1 |
An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array, where each CMOS control element of the plurality of CMOS control elements includes two semiconductor devices. The plurality of CMOS c...
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WO/2017/188504A1 |
An active frequency selective surface and a manufacturing method therefor are provided. Here, the active frequency selective surface is a frequency selective surface for transmitting or reflecting electromagnetic waves having a specific ...
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WO/2017/187903A1 |
Provided is a method for manufacturing a composite wafer in which a lithium tantalate film having a high coefficient of thermal expansion is laminated on a support substrate having a low coefficient of thermal expansion, wherein it is po...
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WO/2017/187768A1 |
Provided is an elastic wave device with which productivity can be increased and insertion loss can be decreased. An elastic wave device 1 comprises: a piezoelectric substrate 2; first to third IDT electrodes 4A-4C which are provided on t...
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WO/2017/179300A1 |
Provided is an elastic wave device in which a wiring electrode is not susceptible to the occurrence of damage. According to the present invention, a first main surface 2a of a piezoelectric substrate 2 is provided with an IDT electrode 3...
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WO/2017/172075A1 |
Embodiments of the invention include a piezoelectric package integrated filtering device that includes a film stack. In one example, the film stack includes a first electrode, a piezoelectric material in contact with the first electrode,...
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WO/2017/172074A1 |
Embodiments of the invention include delay line circuitry that is integrated with an organic substrate. Organic dielectric material and a plurality of conductive layers form the organic substrate. The delay line circuitry includes a piez...
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WO/2017/172062A1 |
Embodiments of the invention include a piezoelectric resonator which includes an input transducer having a first piezoelectric material, a vibrating structure coupled to the input transducer, and an output transducer coupled to the vibra...
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WO/2017/163729A1 |
[Problem] When providing a bonding layer on a support substrate formed from a ceramic and bonding the bonding layer and a piezoelectric single crystal substrate together, to improve bonding strength between the piezoelectric single cryst...
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WO/2017/163722A1 |
[Problem] A bonding layer 3 is formed on a piezoelectric material substrate 1, and the bonding layer 3 is formed from one or more materials selected from the group consisting of silicon nitride, aluminum nitride, alumina, tantalum pentox...
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WO/2017/163723A1 |
[Problem] To enable bonding at normal temperature and improve bonding strength when directly bonding a piezoelectric single-crystal substrate and a support substrate formed from a ceramic. [Solution] On a support substrate formed from a ...
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WO/2017/155032A1 |
In a gallium nitride structure using GaN as a piezoelectric body, a lower electrode can be provided, which can be formed by an easy process. The present invention comprises: a substrate; a gallium nitride layer principally composed of ga...
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WO/2017/144956A1 |
A method and a band reject filter (BRF) using as acoustic resonators at least one of bulk acoustic wave (BAW) resonators and film bulk acoustic resonators (FBAR) are provided. The BRF includes at least one substrate having at least one o...
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WO/2017/138299A1 |
This high frequency module is provided with: a first electronic component (1) that is embedded in an insulating layer (2); a wiring line (3) that is connected to the first electronic component (1); and a via conductor (4) that extends in...
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WO/2017/134980A1 |
Provided are the following: a composite substrate able to achieve sufficient bonding strength when bonding a piezoelectric material layer to a supporting substrate; and a method for producing the composite substrate. The present inventio...
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WO/2017/125188A1 |
The present invention relates to a filter circuit (100) comprising a first and a second resonator (2, 3) operating with bulk acoustic waves, wherein the first resonator (2) comprises a first piezoelectric layer (4), which is structured i...
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WO/2017/126185A1 |
A crystal oscillator (1) is provided with a crystal oscillation element (100) that includes: a crystal piece (110) wherein a pair of oscillation electrodes facing each other are formed; a frame body (120) surrounding the outer periphery ...
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WO/2017/110728A1 |
The present invention addresses the technical problem of providing a sealing ring comprising a metallic brazing material layer on one surface of a base material including Kovar and a metal plating layer on the other surface, the sealing ...
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WO/2017/111805A1 |
Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of reso...
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WO/2017/090380A1 |
In the present invention, resonant frequency is adjusted in a packaged resonator device. Provided are the following: a bottom cover formed from non-degenerate silicon; a resonator which includes a substrate formed from degenerate silicon...
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WO/2017/087159A1 |
A device includes an acoustic resonator (220) embedded within an encapsulating structure (202) that at least partially encapsulates the acoustic resonator (204). The device includes an inductor (211, 229, 231, 233, 235, 212, 213, 214, an...
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