| Document |
Document Title |
|
WO/2020/202962A1 |
A tuning fork type piezoelectric vibrator (1) is provided with: a tuning fork type piezoelectric vibration element (10) that has a basic part (50), a pair of vibration arm parts (60a, 60b), and a pair of connection electrodes (86a, 86b);...
|
|
WO/2020/195830A1 |
A manufacturing method for a piezoelectric vibrator (1) comprises: a step of forming a piezoelectric vibration element (10) in which a pair of excitation electrodes (14a, 14b) each includes an underlayer and a surface layer and the under...
|
|
WO/2020/196139A1 |
A photosensitive resin composition according to the present invention is a photosensitive resin composition comprising (a) an alkali-soluble polyimide, (b) an unsaturated bond-containing compound, (c) a thermally crosslinkable compound, ...
|
|
WO/2020/195818A1 |
The present invention comprises: a crystal vibration element 10 that includes a crystal piece 11 having a center section 11a and a peripheral section 11b, a pair of excitation electrodes 14 provided on the center section 11a, and a pair ...
|
|
WO/2020/195740A1 |
In this electronic component, an electronic element has a first surface. An enclosing member having insulating properties has a second surface and is in close contact with the perimeter of the electronic element while exposing the first ...
|
|
WO/2020/195741A1 |
Provided is an electronic component in which an insulative enclosure member is closely adhered to a periphery of the electronic element while exposing a first surface of the electronic element from a second surface of the enclosure membe...
|
|
WO/2020/191750A1 |
Provided are a crystal oscillator and a manufacturing method and apparatus thereof. The crystal oscillator comprises a silicon-based substrate (10) and a crystal oscillation unit (40). The silicon-based substrate (10) is provided with a ...
|
|
WO/2020/194810A1 |
Provided are: a resonance device in which it is possible to minimize loss of vacuum within a vibration space of a resonator; and a production method for such a resonance device. This resonance device 1 is provided with: a MEMS substrate ...
|
|
WO/2020/197334A1 |
The present invention relates to a stand-alone active EMI filter module and a manufacturing method thereof, wherein the volume of each element constituting the EMI filter module can be reduced , thereby implementing a single module unit ...
|
|
WO/2020/189115A1 |
Provided is a composite substrate that can enhance stability of filter characteristics against temperature change. A composite substrate 1 is a composite substrate that is used for an electronic device. The composite substrate 1 is cha...
|
|
WO/2020/181976A1 |
An MEMS device assembly comprises: an MEMS device having a surface to be encapsulated; and an encapsulation film (14) used to form an encapsulation space (17) for encapsulation of the MEMS device, wherein the encapsulation film (14) has ...
|
|
WO/2020/181816A1 |
Provided in the present invention are a cavity-type bulk acoustic resonator without the need to prepare a sacrificial layer, and a preparation method therefor, comprising the following steps: taking a piezoelectric single crystal wafer s...
|
|
WO/2020/181815A1 |
The present invention relates to the technical field of single crystal thin film preparation, and in particular, to a preparation method for a spliced small-sized single crystal thin film, a single crystal thin film and a resonator. The ...
|
|
WO/2020/174915A1 |
A piezoelectric vibrating device of the present invention is provided with: a piezoelectric vibration plate that has first and second excitation electrodes respectively formed on both main surfaces, and has first and second mounting term...
|
|
WO/2020/173631A1 |
This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better hea...
|
|
WO/2020/173632A1 |
An electro-acoustic resonator comprises an acoustic mirror (120) disposed on a carrier substrate (110), a bottom electrode (130) and a piezoelectric layer (140). An aluminum seed layer (180) is disposed on the piezoelectric layer and a s...
|
|
WO/2020/169304A1 |
An improved BAW resonator is provided. The resonator has a compensation layer (CL) between the bottom electrode (BE) and the piezoelectric layer (PL) to compensate lattice mismatch. The compensation layer (CL) may comprise GaN, InN, InGa...
|
|
WO/2020/171900A1 |
Aspects of the disclosure are directed to a bandpass filter including four BAW resonators in a full lattice arrangement with two matching inductors at the input and output terminal. Further aspects of the disclosure are directed to combi...
|
|
WO/2020/163973A1 |
Provided is an air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, comprising: using a soft seal to lift a bulk acoustic wave device thin film (320) from a donor substrate; using the soft seal to place ...
|
|
WO/2020/155192A1 |
A resonator and a semiconductor device. The resonator comprises: a substrate (100); and a multilayer structure (200) formed on the substrate (100), the multilayer structure (200) comprising a lower electrode layer (203), a piezoelectric ...
|
|
WO/2020/132993A1 |
A connecting structure of a flexible substrate thin film bulk acoustic wave filter, comprising: a first top electrode and a second top electrode, wherein a gap is formed between said top electrodes; piezoelectric layers (511, 611, 720, 8...
|
|
WO/2020/134594A1 |
An integrated structure of and an integrated method for a crystal resonator and a control circuit. A lower cavity (120) is formed in a device wafer (100) provided with a control circuit (110), and an upper cavity (310) is formed in a sub...
|
|
WO/2020/127064A1 |
Electro-acoustic resonator and method for manufacturing the same An electro-acoustic resonator comprises an acoustic mirror (120) disposed on a carrier substrate (110), a bottom electrode (130) and a piezoelectric layer (140). A structur...
|
|
WO/2020/125308A1 |
A bulk acoustic resonator and a preparation method therefor. The preparation method comprises: providing a first silicon wafer, and preparing, on the first silicon wafer, a cavity having an opening at the top; providing a second silicon ...
|
|
WO/2020/127061A1 |
A micro-acoustic device comprises a confinement structure (CS) adapted to block propagation of acoustic waves of an acoustic wave resonator (TEL, PL, BEL; ES) at an operation frequency of the device to confine the acoustic waves to the a...
|
|
WO/2020/124662A1 |
The present application relates to the technical field of semiconductors, and disclosed is a method for fabricating a resonator. The method for fabricating the resonator comprises: pre-treating a substrate, and changing a preset reaction...
|
|
WO/2020/116123A1 |
The present invention is provided with a substrate, an electrode film, and a piezoelectric film comprising an alkali niobium oxide having a perovskite structure represented by compositional formula (K1-xNax)NbO3(0
|
|
WO/2020/098487A1 |
A bulk acoustic resonator, a filter comprising the resonator, and an electronic device comprising the filter The bulk acoustic resonator comprises: substrates (101, 201, 301, 401); acoustic mirrors (103, 203, 303, 403); bottom electrodes...
|
|
WO/2020/098910A1 |
The present invention relates to acoustic wave devices, in particular surface acoustic wave (SAW) devices. The present invention presents a SAW device with an acoustic bandgap structure, and presents a method for fabricating such a SAW d...
|
|
WO/2020/098484A1 |
A bulk acoustic wave resonator, comprising: a substrate (101), an acoustic mirror (103), a bottom electrode (105) provided above the substrate (101), a top electrode (109) that is provided opposite to the bottom electrode (105) and is pr...
|
|
WO/2020/095924A1 |
[Problem] To prevent the breakage and cracking of a joined body obtained by joining a piezoelectric material substrate and a silicon substrate via a joining layer comprising silicon oxide, while also improving the effective resistivity t...
|
|
WO/2020/087957A1 |
The embodiments of the present invention disclose an acoustic wave device. The device comprises: a substrate, and a first electrode layer, a piezoelectric layer, and a second electrode layer sequentially arranged on the substrate. The de...
|
|
WO/2020/083552A1 |
A seed layer (210) of a noble metal is formed by electrochemical deposition on a metal electrode (111) disposed on a dielectric layer (110,310). The noble metal seed layer allows the deposition of a highly textured piezoelectric layer (3...
|
|
WO/2020/066078A1 |
Provided is an airtight sealing cap with a flange portion, in which flow of solder outside a bonding region is suppressed. In the airtight sealing cap, which is used in an electronic component-accommodating package including an electroni...
|
|
WO/2020/062384A1 |
A flexible substrate film bulk acoustic resonator and a forming method therefor conducive to raising the Q value of the resonator and improving the performance of the resonator. The forming method for the flexible substrate film bulk aco...
|
|
WO/2020/066126A1 |
Provided are a resonance device and a resonance device manufacturing method which enable improvement of bond strength and airtightness of joining parts. A resonance device 1 is provided with: a MEMS substrate 50 including a resonator 10;...
|
|
WO/2020/067013A1 |
A composite substrate of the present disclosure comprises: a piezoelectric substrate having a first surface, which is an element forming surface, and a second surface, which is a back surface thereof; a sapphire substrate having a third ...
|
|
WO/2020/050396A1 |
A composite substrate according to the present disclosure is a composite substrate in which a piezoelectric substrate and a sapphire substrate are directly bonded, wherein a step punch structure is provided on the bonding surface of the ...
|
|
WO/2020/044925A1 |
Provided is a composite substrate in which increase in pyroelectric properties due to heat treatment is prevented. This composite substrate includes an oxide single crystal thin film which is a single crystal thin film of a piezoelectric...
|
|
WO/2020/047315A1 |
Packaged surface acoustic wave devices, and methods of making the same are provided. The packaged surface acoustic wave devices are relatively thin and can have a height of less than 220 micrometers. The packaged surface acoustic wave de...
|
|
WO/2020/040203A1 |
Provided is a substrate for a surface acoustic wave element, the substrate comprising a piezoelectric material and having a chamfered part on the outer peripheral surface, wherein the arithmetic mean roughness Ra1 of a roughness curve in...
|
|
WO/2020/028523A1 |
In one embodiment, a signal transduction system includes an arrangement of interacting unit cells. Each unit cell can have one or more adjustable parameters that are adjustable to enable one or more adjustable impedance values of the uni...
|
|
WO/2020/027075A1 |
A composite substrate according to the present disclosure is a composite substrate comprising a piezoelectric substrate and a sapphire substrate which are bonded to each other directly, wherein the ratio of the number of oxygen atoms to ...
|
|
WO/2020/027918A1 |
In certain aspects, a thin film surface acoustic wave, SAW, die comprises a high-resistivity substrate (110), a bonding layer (108) on the high-resistivity substrate, and a thin film piezoelectric island (112) on the bonding layer, where...
|
|
WO/2020/012833A1 |
Provided is a sealing material which comprises a glass powder and a fire-resistant filler powder and has such a property that, when formed into a sealing layer having a small thickness, an undesirable stress rarely remains in the sealing...
|
|
WO/2020/006578A1 |
An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series f...
|
|
WO/2019/241174A1 |
Acoustic resonator devices and filters are disclosed. A filter includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. A conductor pattern is formed on the front...
|
|
WO/2019/233670A1 |
An electroacoustic resonator (EAR) that allows an RF filter having a large bandwidth is provided. The resonator comprises a piezoelectric material (PM) and an electrode structure (ES, EF) on the piezoelectric material. The piezoelectric ...
|
|
WO/2019/228750A1 |
A method of manufacturing a bulk acoustic wave resonator comprises the forming of a workpiece on a substrate (A) that includes a separation layer (111) on which a rare earth metal oxide layer (130) is formed that serves as a seed layer f...
|
|
WO/2019/226285A1 |
An electronic device (400) includes a passive substrate (402). A passive-on-glass, POG, device (470) is on the passive substrate. A bulk acoustic wave, BAW, filter (460) is on the passive substrate. The POG device can be any type of pass...
|
