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Matches 1 - 50 out of 20,579

Document Document Title
WO/2021/083898A1
In at least one embodiment, the electric component comprises a first BAW-resonator (1), a second BAW-resonator (2) electrically connected to the first BAW-resonator and a carrier substrate (3) with a top side (30) on which the BAW-resona...  
WO/2021/079589A1
[Problem] To stably control a vapor deposition rate. [Solution] A film forming device includes a vacuum container, a film forming source, an accommodation container, a film thickness sensor, and a film thickness controller. The film form...  
WO/2021/075124A1
In this invention, a first and second mounting terminals, which are connected to metal films for the first and second mounting terminals formed on both end portions of a piezoelectric vibration plate that sandwich a vibration part, are e...  
WO/2021/070501A1
This SAW module comprises: a piezoelectric element substrate including a piezoelectric body; an IDT that is provided on a surface of the piezoelectric element substrate and is configured by a comb-like electrode pair; and a coating layer...  
WO/2021/059581A1
A piezoelectric vibrator (1) is provided with: a piezoelectric vibration element (10) that has a piezoelectric piece (11) and a pair of electrodes (14a, 14b) including electrodes facing each other with the piezoelectric piece (11) sandwi...  
WO/2021/059576A1
This piezoelectric oscillator (1) comprises: a base (31) having a main surface (31A); a piezoelectric oscillating element (10) mounted to the main surface (31A) of the base (31); a lid member (40) having a recessed section that accommoda...  
WO/2021/057501A1
Embodiments of the present invention provide an overlay packaging process for a semiconductor device, and a semiconductor device. The process comprises the following steps: manufacturing a main wafer, and retaining a packaging and bondin...  
WO/2021/059731A1
Comprised are first and second excitation electrodes formed on both main surfaces of a piezoelectric substrate, and first and second mounting terminals respectively connected to the first and second excitation electrodes, wherein the fir...  
WO/2021/053892A1
Provided is a piezoelectric device (100) in which a membrane part (120) is indirectly supported by a base part (110), is located on the upper side relative to the base part (110), and is formed of a plurality of layers (130). The membran...  
WO/2021/049087A1
The present invention enables operations involving energization to be performed in a short time and in a simple manner. A resonance device comprises: a first board including a resonator having an upper electrode; a second board arranged ...  
WO/2021/047362A1
Provided are an oscillation apparatus and electronic device, used for an electronic device; the electronic device comprises a fan, and the oscillation apparatus comprises a detection module (10), an oscillation module (20), a variable ca...  
WO/2021/045094A1
A crystal oscillator (1) comprising: a crystal oscillating element (10) having a pair of electrodes (14a, 14b) including electrodes that are facing each other; and a holder that houses the crystal oscillating element (10). At least one e...  
WO/2021/042342A1
A bulk acoustic wave resonance device (200), comprising: a first layer, the first layer comprising a first cavity on a first side; a first electrode layer, located on the first side, a first end of the first electrode layer being in cont...  
WO/2021/042740A1
A bulk acoustic wave resonator comprises: a substrate; an acoustic mirror (10); a bottom electrode (11); a top electrode (13); and a piezoelectric layer (12), wherein: an area where the acoustic mirror (10), the bottom electrode (11), th...  
WO/2021/042344A1
A bulk acoustic wave resonance device (100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200), comprising: a first layer, the first layer comprising a cavity (101a, 201a, 301a, 301b, 401a, 502a, 602a, 602b, 702a, 702b, 802a, 902a...  
WO/2021/042343A1
A method for forming a bulk acoustic wave resonance device, comprising: (S201) forming a first layer, which comprises: providing a first substrate; forming a piezoelectric layer located on the first substrate; forming a first electrode l...  
WO/2021/042345A1
A method for forming a bulk acoustic wave resonance device, comprising: forming a first layer, which comprises: providing a first substrate; forming a piezoelectric layer which is located on the first substrate; forming a first electrode...  
WO/2021/042741A1
The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; a piezoelectric layer; the region where the acoustic mirror, bottom electrode, piezoelectr...  
WO/2021/044663A1
This package structure is provided with: one pair of substrates (20, 30) located facing each other; a joint part (H) for sealing an element (10) in an internal space surrounded by the one pair of substrates (20, 30); an adsorption layer ...  
WO/2021/036758A1
Provided is a bulk acoustic wave resonator, comprising: a first electrode (10), a piezoelectric layer (20), and a second electrode (30), said piezoelectric layer (20) being arranged between said first electrode (10) and said second elect...  
WO/2021/041315A1
Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extendi...  
WO/2021/031700A1
A resonator and a manufacturing method therefor, a filter, and an electronic device. The manufacturing method comprises: providing a wafer-level substrate, comprising a piezoelectric oscillation effective area, an acoustic transducer bei...  
WO/2021/034365A1
A resonator that includes a substrate with a cavity that extends in a principal surface thereof and a vibrating resonator above the principal surface of the substrate and including bottom and top electrodes with a piezoelectric layer dis...  
WO/2021/030289A1
A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate...  
WO/2021/021745A1
Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An apparatus may comprise a first electrical filter including an acoustic wave device. The first electri...  
WO/2021/021736A1
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoust...  
WO/2021/021743A1
Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable ...  
WO/2021/021739A1
Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acou...  
WO/2021/012923A1
Provided are a thin film bulk acoustic resonator and a fabrication method therefor, the method comprising: successively forming a first electrode layer, a piezoelectric material layer and a second electrode layer on a first substrate, th...  
WO/2021/012379A1
Provided is a method for manufacturing a thin-film bulk acoustic wave resonator. In said manufacturing method, a bulk acoustic wave film (120) and a support structure (130) are sequentially formed on a first substrate (100); the support ...  
WO/2021/012376A1
A packaging method and a packaging structure for a bulk acoustic resonator. An elastic bonding material layer (301) having a second cavity (302) is formed on a second substrate (300), and is used to manufacture a resonator cover (30). Th...  
WO/2021/012380A1
A packaging method and a packaging structure for a bulk acoustic resonator. In a resonator cover (30), a second cavity (302) is mainly formed from the combination of a recess (300a) in a second substrate (300) and a space bounded by an e...  
WO/2021/013574A1
An electro acoustic filter component with improved acoustic and/or electro acoustic performance is provided. The component comprises a piezoelectric material (PM) the sides of which are plane and preferably free from chipping defects. Th...  
WO/2021/012396A1
A packaging module and packaging method for a BAW resonator. In the packaging method, a BAW resonator device (100) comprising a first substrate (110) and a resonant structure (120) disposed on the first substrate (110) is bonded to a sec...  
WO/2021/010164A1
An electronic component (100) comprises: a substrate (110); functional elements (120) formed on the substrate (110); columnar conductors (140) protruding from the substrate (100); a cover part (130) which is supported by the columnar con...  
WO/2021/009008A1
At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.  
WO/2021/002434A1
The present invention comprises a substrate, an electrode film, and a piezoelectric film which is a polycrystalline film comprising an alkali niobate having a perovskite structure represented by the compositional formula (K1-xNax)NbO3 (0...  
WO/2021/002047A1
[Problem] To provide a joined body that enables improvement of a Q value of an elastic wave element. [Solution] A joined body 9A includes a support substrate 6, a piezoelectric material substrate 1A, and a silicon oxide layer 2 between t...  
WO/2020/259661A1
The present invention provides a high-frequency surface acoustic wave resonator and a preparation method therefor. The high-frequency surface acoustic wave resonator comprises: a high-wave-velocity supporting substrate, a piezoelectric f...  
WO/2020/262607A1
Provided is an elastic wave device in which a substrate has a piezoelectric predetermined region on a first major surface facing one side in a direction normal to the substrate. An excitation electrode is positioned in the predetermined ...  
WO/2020/255474A1
A resonance device 1 is provided with: an MEMS substrate 40 including a resonator 10; an upper lid 30 provided to seal an oscillation space S of the resonator 10; and a grounding part 50 located between the MEMS substrate 40 and the uppe...  
WO/2020/252962A1
An acoustic wave device and a preparation method therefor, and a temperature control method of the acoustic wave. The preparation method comprises: respectively providing a first substrate and a second substrate (S110); forming an acoust...  
WO/2020/250490A1
[Problem] To improve the bonding strength when bonding a piezoelectric material substrate to a support substrate formed from quartz, and to prevent delamination even if the piezoelectric material substrate is thin. [Solution] A composite...  
WO/2020/250491A1
[Problem] To improve the bonding strength when bonding a piezoelectric material substrate formed from lithium tantalate or the like to a support substrate formed from quartz, and to prevent delamination even if the piezoelectric material...  
WO/2020/238509A1
A bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode, provided on the substrate; a top electrode (50), opposite to the bottom electrode and having an electrode connection portion; and a piezoele...  
WO/2020/238286A1
Provided in the present application are a resonant thin film layer, a resonator and a filter; the resonant thin film layer comprises a first electrode layer disposed on a first wafer, a piezoelectric layer disposed on the first electrode...  
WO/2020/234238A1
A BAW resonator with reduced losses is provided. The BAW resonator (BAWR) has a first gap (G1) arranged between the piezoelectric material (PM) and a first electrode (EL1) selected from the bottom electrode (BE) and the top electrode (TE...  
WO/2020/228284A1
The present invention provides a method for preparing a solid reflection type bulk acoustic wave resonator, comprising the following steps of: taking a piezoelectric material subjected to ion implantation, growing a reflection layer belo...  
WO/2020/228285A1
The present invention relates to the technical field of preparation of cavity type bulk acoustic wave resonators, and in particular to a method for preparing a cavity type bulk acoustic wave resonator and the cavity type bulk acoustic wa...  
WO/2020/227396A1
Methods of fabricating a bulk acoustic wave resonator structure for a fluidic device can include a first step of disposing a first conductive material over a portion of a first surface of a substrate to form at least a portion of a first...  

Matches 1 - 50 out of 20,579