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WO/2024/080427A1 |
In order to achieve the objective, the subject matters of the present invention are a bonding structure of heterogeneous substrates, a manufacturing method therefor, and an elastic wave device using same. In the bonding structure in whic...
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WO/2024/067087A1 |
A method for forming a bulk acoustic wave resonance apparatus. The method comprises: forming a first portion, which comprises: providing a first substrate; forming a piezoelectric layer, which is located above the first substrate; formin...
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WO/2024/061071A1 |
A bulk acoustic wave resonance apparatus and a method for forming same, relating to the technical field of semiconductor manufacturing. The bulk acoustic wave resonance apparatus comprises: a substrate (200); an intermediate layer (201),...
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WO/2024/063072A1 |
Provided is a bonded substrate in which the generation of voids is suppressed and that has high bonding strength. An aspect of the present disclosure is directed to a bonded substrate in which a first substrate and a second substrate are...
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WO/2024/063696A1 |
A bulk acoustic wave, BAW, device comprises a piezoelectric layer (330) disposed between a first electrode layer (104A) and a sandwich electrode (106A). The sandwich electrode includes a first layer (114) of a first material having a fir...
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WO/2024/063697A2 |
A bulk acoustic wave (BAW) device comprises a layer stack including first and second electrodes, a first piezoelectric layer between the electrodes, and a second piezoelectric layer between the first piezoelectric layer and the second el...
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WO/2024/064524A1 |
A package comprising an acoustic device (102), a polymer frame (105) coupled to the acoustic device, a plurality of frame interconnects (142) located in the polymer frame, where the plurality of frame interconnects are coupled to the aco...
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WO/2024/061051A1 |
Disclosed in the present application are a laterally excited bulk acoustic resonator with phononic crystals, and a preparation method for same. The laterally excited bulk acoustic resonator comprises an interdigital electrode, a piezoele...
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WO/2024/057268A1 |
A surface acoustic wave, SAW, filter includes a bottom substrate (210), a piezoelectric layer (140) disposed above the bottom substrate and having a bottom surface (140a) facing the bottom substrate and a top surface (140b) opposite to t...
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WO/2024/057267A1 |
A surface acoustic wave, SAW, filter includes a bottom substrate (210), a piezoelectric layer (140) disposed above the bottom substrate, the piezoelectric layer having a bottom surface (140a) facing the bottom substrate and a top surface...
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WO/2024/057266A1 |
A surface acoustic wave, SAW, filter includes a bottom substrate (210), a piezoelectric layer (140) disposed above the bottom substrate, the piezoelectric layer having a bottom surface (140a) facing the bottom substrate and a top surface...
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WO/2024/044926A1 |
The present disclosure relates to the technical field of radio frequency micro-electromechanical systems. Provided are a bulk acoustic resonator and a manufacturing method therefor, and a filter. The bulk acoustic resonator of the presen...
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WO/2024/040517A1 |
The present disclosure provides a filter and a preparation method therefor, and an electronic device. The filter comprises a first substrate (100) and a second substrate (200) that are arranged opposite each other, and a connecting subst...
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WO/2024/040679A1 |
The present application discloses a bulk acoustic resonator, a fabrication method therefor, a filter, and an electronic device. The bulk acoustic resonator comprises a substrate and an acoustic reflection structure, bottom electrode, pie...
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WO/2024/044106A1 |
The present disclosure relates to an acoustic wave device for asymmetric frequency bands and a manufacturing process for making the same. The disclosed acoustic wave device includes at least one first electrode (102:152), at least one se...
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WO/2024/040696A1 |
A resonator provided in the present application, comprising a substrate, a bottom electrode, a piezoelectric layer, and a top electrode. The bottom electrode is located between the substrate and the piezoelectric layer, the piezoelectric...
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WO/2024/032440A1 |
A surface acoustic wave resonance apparatus and a forming method therefor, which relate to the technical field of semiconductors. The surface acoustic wave resonance apparatus comprises: a piezoelectric substrate; and an electrode struct...
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WO/2024/027735A1 |
The present invention relates to a quartz resonator and a manufacturing method therefor. The quartz resonator comprises: a quartz piezoelectric layer; a bottom electrode and a top electrode, one of the top electrode and the bottom electr...
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WO/2024/027920A1 |
The invention relates to method (100) for producing a surface acoustic wave, SAW, resonator device (200), the method (100) comprising: obtaining (110) an Yttrium Aluminum Garnet, YAG, layer (210); forming (120) an interleave layer (220) ...
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WO/2024/022723A1 |
The invention relates to a method for preparing a single-domain thin layer (4) made of lithium-containing ferroelectric material. The method comprises providing a first single-domain layer (8) made of lithium-containing ferroelectric mat...
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WO/2024/023711A1 |
The present invention offers novel ways of achieving high degree of mechanical stress isolation and high accuracy of temperature sensing in quartz crystal resonators.
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WO/2024/021933A1 |
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The bulk acoustic resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arrange...
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WO/2024/025458A1 |
A bulk acoustic wave, BAW, (100) device with resonance-tuned layer stack is disclosed. The BAW device includes two acoustic resonators (102(A)), 102(B)) with top electrodes (104(A)), 104(B)) in different regions (108(A)), 108(B)) on a to...
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WO/2024/016606A1 |
A semiconductor device, a communication apparatus and a manufacturing method therefor. The semiconductor device comprises: a first functional module, provided on a first substrate (100), and comprising a chip (101), an electrical connect...
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WO/2024/016095A1 |
The present application relates to the technical field of radio frequency micro-electro-mechanical systems. Provided are a filter unit and a preparation method therefor, and an electronic apparatus. The filter unit comprises: a resonant ...
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WO/2024/019142A1 |
IDT electrodes are fine and it is, therefore, necessary to improve the power tolerance to migration. This elastic wave device comprises: a piezoelectric layer; an electrode that is provided on the piezoelectric layer; and a cover part th...
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WO/2024/012311A1 |
A method for forming a surface acoustic wave resonance device, relating to the technical field of semiconductors. The method comprises: providing a piezoelectric substrate, the piezoelectric substrate comprising a first interval area, a ...
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WO/2024/007404A1 |
A thin-film bulk acoustic resonator, comprising a substrate (1), an acoustic reflection structure (2) arranged on one side of the substrate (1), a bottom electrode (3) stacked on one side of the acoustic reflection structure (2), a piezo...
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WO/2024/009555A1 |
A resonance device (1) comprises: a resonator (10) that has a vibrating part (110), a retention part (140) disposed at least in a portion of the surroundings of the vibrating part (110), and a supporting arm (150) that connects the vibra...
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WO/2024/001087A1 |
Disclosed in the present invention are a preparation method for a film bulk acoustic resonator, and a film bulk acoustic resonator. The resonator comprises a silicon substrate, a bottom electrode layer, a piezoelectric layer and a top el...
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WO/2024/003001A1 |
The invention concerns a layer for an acoustic device, in particular for a micro acoustic radio frequency device. According to the invention, the layer has essentially a composition SiOxCyNz, wherein x, y and z > 0. Furthermore, the inve...
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WO/2024/004333A1 |
Provided is a composite substrate that can contribute to improving the performance of a SAW filter. A composite substrate according to an embodiment of the present invention has: a support substrate having an upper surface and a lower su...
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WO/2023/248751A1 |
The present invention can ensure bonding strength between an electrode layer and an under bump metal. The present invention has a piezoelectric layer, an electrode layer positioned on an upper surface of the piezoelectric layer, an under...
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WO/2023/250159A1 |
Devices (e.g., resonators) comprising a single-crystalline material, and related systems and methods, are generally described.
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WO/2023/242468A1 |
An acoustic wave resonator comprising a piezoelectric layer and a drive electrode and a counter-electrode connected to the piezoelectric layer. The counter-electrode is adjacent to the drive electrode and the counter-electrode and the dr...
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WO/2023/232562A1 |
The invention relates to a method for manufacturing an elastic wave device configured to operate at a frequency lower than 1 GHz, and formed on a POI substrate, the formation of the POI substrate comprising the following steps: - a) a st...
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WO/2023/235645A1 |
An acoustic wave resonator has a first conductive layer (210), piezoelectrical material (212) formed over the first conductive layer, and second conductive layer (214) formed over the piezoelectric material. An alignment of the first con...
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WO/2023/228985A1 |
The present invention equalizes the frequency characteristics of adjacent resonators. This elastic wave device comprises a plurality of resonators. Each of the plurality of resonators comprises: a support member having thickness in a fir...
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WO/2023/209138A1 |
The invention relates to an elastic surface wave device (100) comprising a piezoelectric layer (120), electrodes (150A, 150B) embedded in the piezoelectric layer, and a substrate (130) carrying the piezoelectric layer and the electrodes,...
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WO/2023/208685A1 |
The invention relates to a volume-acoustic device comprising a first electrode (1a; 1b) and a second electrode (2a; 2b); a piezoelectric element (3) arranged between the first electrode (1a; 1b) and the second electrode (2a; 2b), wherein...
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WO/2023/207474A1 |
The present application relates to a filter, a multiplexer, a radio frequency front-end module, and a preparation method for a filter. The filter comprises a substrate, a piezoelectric layer, a first lower electrode, a second lower elect...
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WO/2023/204245A1 |
An elastic wave device 10 comprises: a support member 20 having an energy confinement layer (for example, a cavity 21) on one main surface; a piezoelectric layer 30 provided to the one main surface of the support member 20 so as to cover...
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WO/2023/200670A1 |
A filter device is provided that includes a substrate having a surface and a piezoelectric plate (610) supported by the substrate. A plurality of interdigital transducers, IDTs, for multiple resonators are provided that each have interle...
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WO/2023/195409A1 |
An elastic wave device according to the present invention comprises a support substrate that has a cavity in one principal surface, a piezoelectric layer that is provided on the one principal surface of the support substrate, and a funct...
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WO/2023/189103A1 |
The objective of the present invention is to provide a composite substrate having excellent durability. A composite substrate according to an embodiment of the present invention includes, in the stated order, a piezoelectric layer, a ref...
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WO/2023/188760A1 |
According to the present invention, a detection device comprises: a substrate 10; a first piezoelectric thin film resonator 11a that comprises a first lower electrode 12a that is provided on the substrate, a first piezoelectric layer 14a...
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WO/2023/189334A1 |
An elastic wave sensor 100 comprises: a piezoelectric substrate 10; a pair of comb electrodes 24a and 24b which are provided on the piezoelectric substrate 10 and have a plurality of electrode fingers 22a and 22b, spaces between adjacent...
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WO/2023/181487A1 |
This crystal oscillation element (102) comprises: a crystal piece (110) having a pair of main surfaces (112, 114) facing each other; and a pair of excitation electrodes (120, 130) provided to the pair of main surfaces (112, 114) of the c...
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WO/2023/173900A1 |
The present invention provides a bulk acoustic resonator, comprising a cavity formed in a substrate or formed in a support layer on the substrate; and a lower electrode, a piezoelectric layer, and an upper electrode. An overlapping regio...
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WO/2023/171025A1 |
A resonant device (1) comprising: a first substrate (50) that includes a first silicon substrate (20) and a resonator (10); a second substrate (30) that is disposed on the side of the first substrate (50) on which the resonator (10) is p...
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