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WO/2023/011716A1 |
The present disclosure relates to surface acoustic wave (SAW) devices. The disclosure presents a SAW device with a multi-layer stack that includes YAG as a novel acoustic material. The SAW device comprises, in particular, a YAG layer, an...
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WO/2023/013169A1 |
According to the present invention, stress generated in a resonator as a result of an impact is alleviated. This resonating device comprises a resonator 10 including a base portion 130, a plurality of vibrating arms 121A to 121D respec...
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WO/2023/014670A1 |
A process for fabricating a transversely-excited film bulk acoustic resonator (XBAR) and that XBAR are described. A sacrificial pillar is formed on a surface of a piezoelectric wafer and a highly conforming dielectric layer is deposited ...
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WO/2023/013694A1 |
The present invention addresses the problem of suppressing variation in chip size. This elastic wave apparatus comprises: a first substrate; a piezoelectric layer that overlaps the first substrate as seen in a first direction and has a f...
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WO/2023/013742A1 |
The present invention suppresses an elastic wave leak. This elastic wave device comprises: a support member comprising a support substrate having a thickness in a first direction; a piezoelectric layer provided in the first direction of ...
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WO/2023/014534A1 |
Methods of fabricating filter devices are disclosed. A back surface of a piezoelectric plate having a first thickness is attached to a substrate. The front surface of the piezoelectric plate is selectively etched to thin a portion of the...
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WO/2023/005426A1 |
The present invention relates to a bulk acoustic wave resonator and a fabrication method therefor. The resonator comprises a substrate, a bottom electrode, a top electrode, and a piezoelectric layer. The bottom electrode comprises a plur...
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WO/2023/006092A1 |
The present invention relates to a bulk acoustic wave resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, a top electrode, and a piezoelectric layer. The bottom electrode comprises a pl...
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WO/2023/008138A1 |
This crystal oscillator comprises a crystal element, an IC, a package and a connection member. The IC has a terminal. The package holds the crystal element and the IC. The connection member is composed of gold (Au), and is a bump or bond...
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WO/2023/006089A1 |
The present invention relates to a film bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, a top electrode, and a piezoelectric layer. The bottom electrode comprises mult...
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WO/2023/005420A1 |
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, a top electrode and a piezoelectric layer, wherein the bottom electrode comprises a ...
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WO/2023/009884A1 |
A circuit includes a semiconductor substrate (122) and an integrated passive device (104). The integrated passive device (104) is on a surface of the semiconductor substrate (122). The integrated passive device (104) is in a metal layer ...
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WO/2023/008112A1 |
This crystal element 10 comprises: a vibration unit 11 as an AT cut crystal piece having a first surface 111 and a second surface 112 in a front-back relationship; and excitation electrodes 141, 142 positioned respectively on the first s...
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WO/2023/007787A1 |
A resonance device (1) comprises: a first substrate (50) including a first silicon substrate (P10) and a resonator (10); a second substrate (30) facing the first substrate (50); and a frame-shaped bonding part (H) that bonds the first su...
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WO/2023/002858A1 |
Provided is an elastic wave device capable of suppressing unwanted waves and also suppressing an increase in insertion loss. An elastic wave device 10 of the present invention is provided with: a support member including a support subs...
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WO/2023/003005A1 |
Provided is an elastic wave device which can decrease the absolute value of a difference ΔTCV between sound velocity temperature coefficients at a resonance point and an anti-resonance point. This elastic device 1 comprises: a piezoel...
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WO/2023/002948A1 |
A reception filter in which a longitudinally coupled elastic wave filter is less likely to be damaged is provided. A reception filter 1 comprises an input terminal 2A and an output terminal 2B, and a longitudinally coupled elastic wave...
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WO/2023/002822A1 |
Provided is an elastic wave device in which cracks are unlikely to occur in a piezoelectric layer. An elastic wave device 10 according to the present invention comprises a support member including a support substrate, a piezoelectric l...
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WO/2023/002790A1 |
Provided is an elastic wave device capable of suppressing unwanted waves at a frequency lower than and around a resonance frequency. An elastic wave device 10 of the present invention comprises: a support member including a support sub...
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WO/2023/003006A1 |
The present invention provides an elastic wave device in which temperature characteristics can be improved. An elastic wave device 1 comprises a piezoelectric layer 3, and an IDT electrode 4 which is provided on the piezoelectric layer...
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WO/2023/000228A1 |
The present application relates to the technical field of communications and provides a radio frequency filter and an electronic device, for improving the frequency of a radio frequency filter. The radio frequency filter has an input ter...
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WO/2023/002909A1 |
Provided is a composite filter device capable of reducing an insertion loss in a band pass filter and increasing an attenuation amount in the vicinity of a pass band. A composite filter device 10 comprises: a first band pass filter 1A ...
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WO/2023/002824A1 |
Provided is an elastic wave device in which transverse modes can be effectively suppressed. An elastic wave device 10 of the present invention comprises: a support member including a support substrate; a piezoelectric layer 14 provided...
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WO/2023/002823A1 |
The present invention provides an elastic wave device that can suppress an increase in insertion loss. An elastic wave device 10 according to the present invention comprises: a support member that includes a support substrate; a piezoe...
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WO/2023/003840A1 |
Resonators comprising a single-crystalline semiconductor, and related systems and methods, are generally described.
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WO/2023/286704A1 |
According to the present invention, an IDT electrode comprises: a first busbar; a second busbar opposing the first busbar; a plurality of first electrode fingers each electrically connected to the first busbar; a plurality of second elec...
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WO/2023/286605A1 |
The present invention broadens bandwidth. An elastic wave device according to the present invention comprises: a support member having a thickness in a first direction and including a support substrate; a piezoelectric layer provided on ...
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WO/2023/286327A1 |
According to the present invention, changes over time in a resonant frequency are suppressed. A crystal resonator 1 comprises a base member 30, and a crystal resonating element 10 which is held on one surface of the base member 30 and ...
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WO/2023/284767A1 |
A bulk acoustic wave resonator device of the present invention comprises: a cavity; a first electrode layer, at least one end of the first electrode layer being located above or inside the cavity; a piezoelectric layer, the cavity and th...
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WO/2023/284766A1 |
A BAW resonance device, comprising: a first electrode layer, the first electrode layer comprising a first sub-layer and a second sub-layer; a piezoelectric layer, the first electrode layer being located on a first side of the piezoelectr...
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WO/2023/285225A1 |
The invention relates to an electromechanical system having: a microelectromechanical (MEMS) apparatus which has a component which can oscillate; a signal processing apparatus which is designed to receive and process a signal output from...
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WO/2023/286705A1 |
Provided is an acoustic wave device, wherein a plurality of second electrode fingers are connected to a potential different from that of a plurality of first electrode fingers and are arranged alternately with the plurality of first elec...
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WO/2023/282328A1 |
In the present invention, the IDT-reflector gap is the distance between a comb electrode finger closest to a reflector (12) of an acoustic wave element (10) and a reflective electrode finger closest to an IDT electrode (11). The center-t...
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WO/2023/282264A1 |
The present invention suppresses warping of a piezoelectric layer. An elastic wave device comprising: a support substrate having a thickness in a first direction; an intermediate layer provided on the support substrate; a piezoelectric l...
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WO/2023/282343A1 |
Provided is a compact filter device that is capable of filtering signals in a wide band. A filter device 10 comprises: a piezoelectric substrate 201; a dielectric layer 202 which is provided on the piezoelectric substrate 201; an IDT ele...
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WO/2023/282330A1 |
An elastic wave element (10) comprises: a piezoelectric substrate (100); an IDT electrode (11) having a plurality of interdigitated electrode fingers (11a, 11b); and a reflector (12) having a plurality of reflecting electrode fingers (12...
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WO/2023/274343A1 |
The content of the present disclosure relates to a filter, comprising: a substrate; one or more resonators which are disposed on the substrate; and a dam structure which is disposed on the substrate and surrounds the one or more resonato...
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WO/2023/276201A1 |
The present invention is provided with: a substrate; a piezoelectric vibration element mounted on the substrate; a lid member, joined to the substrate, for sealing the piezoelectric vibration element; and, a holding member for joining th...
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WO/2023/276871A1 |
The present invention mitigates characteristics degradation during simultaneous communication. In a high frequency module (500), a plurality of filters are connected to an antenna terminal (T1) via a switch (7). The plurality of filters ...
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WO/2023/273198A1 |
Embodiments of the present application provide a duplexer and a packaging method therefor, and an electronic device. The duplexer comprises a substrate and a piezoelectric chip, a transmit filter and a receive filter are disposed on a fi...
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WO/2023/278362A2 |
Techniques regarding forming flip chip interconnects are provided. For example, one or more embodiments described herein can comprise a three-dimensionally printed flip chip interconnect that includes an electrically conductive ink mater...
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WO/2022/270330A1 |
In the present invention, deterioration in characteristics of a filter is reduced. In a high-frequency module (500), a filter includes: a first substrate; a first function electrode (11) that is provided on the first substrate and that c...
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WO/2022/270543A1 |
A crystal oscillation plate (10) is provided with an oscillating portion (11), an outer frame portion (12) surrounding the periphery of the oscillating portion (11), and a holding portion (13) coupling the oscillating portion (11) and th...
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WO/2022/272201A1 |
Disclosed is a radio frequency, RF, filter that vertically integrates an acoustic wave filter with an integrated passive device, IPD, filter. The acoustic wave filter provides selectivity at fundamental frequency band while the IPD filte...
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WO/2022/270405A1 |
Provided is an elastic wave device in which a higher mode does not readily occur. Provided is an elastic wave device 1 in which: a piezoelectric film 3 is layered on an energy confinement layer; an IDT electrode 4 and a first dielectri...
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WO/2022/267710A1 |
Disclosed are a bulk acoustic resonator assembly, a manufacturing method, and a communication device. The bulk acoustic resonator assembly comprises: a substrate; and at least one resonance unit, the resonance unit being located on a sur...
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WO/2022/270406A1 |
[Problem] The present invention provides a surface acoustic device that can further reduce the acoustic velocity of a propagated surface acoustic wave, and for which reduced size and lower frequency are possible. [Solution] A piezoelectr...
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WO/2022/266789A1 |
The present disclosure provides an acoustic resonator based on a high-crystallinity doped piezoelectric film. The acoustic resonator comprises: a substrate; a seed layer disposed on the substrate, a Bragg reflection structure being forme...
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WO/2022/269721A1 |
[Problem] To provide a surface acoustic wave device that can further reduce the sound velocity of a propagating surface acoustic wave, and that can be made more compact and have a lower frequency. [Solution] A piezoelectric substrate 11 ...
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WO/2022/269970A1 |
A crystal oscillator 1 comprises a crystal oscillator element, a substrate 30 having a main surface 32a to which the crystal oscillator element is mounted with a conductive holding member therebetween, and a lid member that is joined to ...
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