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WO/2022/180961A1 |
[Problem] The purpose of the present invention is to provide aluminum nitride to which scandium having nitrogen polarity is added. [Solution] A nitride material which is represented by chemical formula ScXMYAl1-X-YN, and which is charact...
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WO/2022/181578A1 |
This elastic wave filter (1) comprises: a filter circuit connected to input/output terminals (110 and 120); and a cancel circuit (10) connected in parallel with at least a portion of a first path connecting the input/output terminal (110...
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WO/2022/178589A1 |
A phononic circuit component including a membrane coupled to a substrate, the membrane including a region having an array of holes and a channel provided in the substrate beneath the region so that the region is released from the substra...
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WO/2022/181073A1 |
An acoustic wave module (100) comprises an acoustic wave device (110), a mounting substrate (50), a sealing resin (80), and solder bumps (70a, 70b). The acoustic wave device (110) comprises a piezoelectric substrate (10), a function elem...
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WO/2022/178925A1 |
Disclosed are a tunable low-pass filter and a preparation method. The tunable low-pass filter comprises: at least one slow-wave CPW filter unit, wherein the slow-wave CPW filter unit comprises an inductor series circuit and an MEMS switc...
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WO/2022/181113A1 |
A piezoelectric element 10 comprises: a vibration unit 11; a holding unit 13; excitation electrodes 141, 142; mounted electrodes 151, 152; and wiring electrodes 161, 162. An excitation main surface 111 and a holding main surface 131 are ...
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WO/2022/174518A1 |
Disclosed are a resonator device and a filter. The resonator device comprises a wafer substrate, a piezoelectric layer and an interdigital electrode layer; the piezoelectric layer is located at one side of the wafer substrate and compris...
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WO/2022/176454A1 |
The present invention improves heat dissipation. In a high frequency module, an electronic component (10) comprises a first transmission filter (1), a second transmission filter (2), a first input terminal (T11) and a first output termin...
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WO/2022/174440A1 |
The present application relates to the field of piezoelectric technology and provides a piezoelectric element, a piezoelectric vibrator, manufacturing and driving methods therefor, and an electronic device. In the present application, a ...
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WO/2022/176738A1 |
An elastic wave filter having increased reliability of connection of a via and an electrically conductive member and capable of suppressing degradation of filter characteristics is provided. The elastic wave filter (2) is provided with a...
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WO/2022/174519A1 |
Disclosed are a resonant device and an acoustic filter. The resonant device comprises a wafer substrate, a piezoelectric layer and an interdigital electrode layer; the piezoelectric layer is located on one side of the wafer substrate and...
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WO/2022/174587A1 |
Disclosed in embodiments of the present application are a bulk acoustic wave resonant structure and a manufacturing method therefor. The bulk acoustic wave resonant structure comprises a substrate, and a reflection structure, a first ele...
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WO/2022/173038A1 |
Provided is an elastic wave device that can be further reduced in size. An elastic wave device 1 comprises: a piezoelectric layer 6 that comprises lithium tantalate or lithium niobate; a dielectric film 7 that is provided on the piezoe...
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WO/2022/170683A1 |
The present application relates to an acoustic wave resonator manufacturing method and an acoustic wave resonator. The method comprises: preparing a first laminated layer on a piezoelectric wafer substrate, bonding the side of the first ...
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WO/2022/173039A1 |
The present invention provides an elastic wave device in which an IDT electrode is formed of an epitaxial film. An elastic wave device 1 which comprises a piezoelectric layer 6 that is formed of lithium tantalate or lithium niobate, a ...
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WO/2022/170682A1 |
The present application relates to a resonator and an electronic device. A dedicated micromachining process flow is used to successively arrange, in a stacked manner and on a substrate, a high/low-acoustic-impedance alternating layer, a ...
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WO/2022/168937A1 |
The present invention suppresses damage to a piezoelectric layer. This elastic wave device comprises: a support substrate having a thickness in a first direction; a piezoelectric layer provided in the first direction of the support subst...
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WO/2022/167236A1 |
The invention relates to an optomechanical transducer (1), comprising: • a tuning fork (2) made of piezoelectric material comprising two arms (3a, 3b), • at least one photoactive film (4) partially deposited on at least one part of a...
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WO/2022/168364A1 |
A resonating device (1) is provided with a first board (50) including a resonator (10), and a second board (30) joined to the first board (50), wherein: the second board (30) includes a first power source terminal (ST2) electrically conn...
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WO/2022/167319A1 |
Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators configured to systematically modify phase characteristics of an antenna reflection coefficient. One aspect is a wireless communication...
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WO/2022/169405A1 |
Various embodiments may relate to an acoustic resonator. The acoustic resonator may include a piezoelectric layer. The acoustic resonator may also include a first electrode in contact with a first surface of the piezoelectric layer. The ...
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WO/2022/168498A1 |
The present invention provides a composite substrate which has excellent durability, while confining the energy of elastic waves in a piezoelectric layer. A composite substrate according to one embodiment of the present invention compris...
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WO/2022/168363A1 |
The method for manufacturing a resonance device (1) includes: preparing an aggregate substrate (100) which has a plurality of first power supply terminals (ST1) electrically connected to respective upper electrodes (125) of a plurality o...
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WO/2022/168798A1 |
Provided is an elastic wave device capable of suppressing higher order modes in a wide band. This elastic wave device 1 includes: a quartz substrate 3; a silicon carbide layer 4 provided on the quartz substrate 3; a lithium tantalate l...
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WO/2022/168799A1 |
The present invention provides an elastic wave device which is capable of suppressing a high-order mode in a wide band that is not less than 1.5 times the resonant frequency. An elastic wave device 1 according to the present invention ...
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WO/2022/168796A1 |
Provided is an elastic wave device capable of suppressing higher modes in a wide band. This elastic wave device 1 comprises: a crystal substrate 3; a polycrystalline silicon layer 4 provided on the crystal substrate 3; a lithium tantal...
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WO/2022/168797A1 |
Provided is an elastic wave device with which it is possible to suppress higher-order modes in a wide band. This elastic wave device 1 comprises: a crystal substrate 3; a silicon nitride film 4 provided on the crystal substrate 3; a li...
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WO/2022/165120A1 |
An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, and an interdigital transducer electrode. A ratio d / p is less than or equal to about 0.5, where d is a thickness of the piezoelectric...
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WO/2022/161906A1 |
Certain aspects of the present disclosure provide a surface acoustic wave (SAW) resonator with piston mode design and electrostatic discharge (ESD) protections. An example electroacoustic device generally includes a piezoelectric materia...
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WO/2022/163533A1 |
The present invention provides: a method for producing a composite substrate which exhibits excellent adhesion between a ceramic substrate and a layer containing a tetrafluoroethylene polymer, while having excellent electrical characteri...
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WO/2022/163263A1 |
A multiplexer (10) includes filters (100, 200), a resin layer (60), and a conductor layer (70). The passband of the filter (200) is lower than the passband of the filter (100). The filter (100) is in contact with the conductor layer and ...
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WO/2022/161142A1 |
The present invention relates to a bulk acoustic resonator, comprising a substrate, a top electrode, a piezoelectric layer, a bottom electrode, and an acoustic mirror. A support layer is disposed between the substrate and a resonant stru...
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WO/2022/163865A1 |
Provided is an elastic wave device in which ripples in a frequency characteristic can be suppressed. An elastic wave device 10 according to the present invention constitutes a filter device having a pass band and comprises a laminated ...
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WO/2022/161135A1 |
The present invention relates to a filter comprising a plurality of bulk acoustic resonators. Each bulk acoustic resonator comprises a piezoelectric layer; the piezoelectric layer is scandium-doped aluminum nitride; the doping concentrat...
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WO/2022/159255A1 |
A surface acoustic wave, SAW, device (200) includes a first interdigital transducer, IDT, (202) and a second IDT (204) each including interdigital electrodes disposed on a first surface of a substrate (212) of piezoelectric material. The...
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WO/2022/158470A1 |
An elastic wave filter (1) comprises one or more serial arm resonators and one or more parallel arm resonators, and also includes elastic wave resonators having IDT electrodes formed on a substrate. The substrate has a piezoelectric film...
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WO/2022/158370A1 |
Provided is an elastic wave device that can be reduced in size. This elastic wave device 1 comprises a substrate 6 having a piezoelectric layer 5, an IDT electrode 7, and first and second reflectors 8, 9, the elastic wave device 1 bein...
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WO/2022/158363A1 |
Provided is an elastic wave device capable of suppressing a lateral mode while increasing the freedom of material. An elastic wave device 1 of the present invention is provided with: a piezoelectric substrate 2 including a piezoelectri...
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WO/2022/158028A1 |
This piezoelectric vibrator is provided with a piezoelectric vibration element (10), a base member (30), and a pair of electrically conductive holding members (36a, 36b) which electrically connect a pair of connecting electrodes (16a, 16...
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WO/2022/158091A1 |
This piezoelectric oscillator comprises a piezoelectric vibrating element having an excitation electrode and a connection electrode electrically connected to the excitation electrode, a base member having an electrode pad, and a conducti...
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WO/2022/159814A1 |
An acoustic wave device includes a support substrate; a piezoelectric layer on the support substrate; a first electrode and a second electrode on the piezoelectric layer in a lamination direction of the support substrate and the piezoele...
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WO/2022/157029A2 |
Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One example is a frequency band filter circuit having a split resonator. The split resonator comprises a resonator including a first ...
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WO/2022/156722A1 |
The present invention provides an electronic device and a formation method therefor. A transmitting end resonance structure and a receiving end sealing cover cavity are prepared on a first wafer, and a transmitting end sealing cover cavi...
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WO/2022/158249A1 |
Provided is an elastic wave device which is unsusceptible to leaking elastic waves in a direction that is perpendicular to a lamination direction of a piezoelectric substrate. This elastic wave device 1 comprises: a piezoelectric subst...
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WO/2022/152178A1 |
Disclosed in the present invention are a filter, a duplexer, a multiplexer, and an electronic device. In the embodiments of the present invention, at least two resonators in a filter have a dual-layer bottom electrode structure, and an e...
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WO/2022/153948A1 |
Provided is an elastic wave device that can suppress a transverse mode in an arbitrary frequency range. This elastic wave device 1 comprises: a piezoelectric substrate 2 that includes a support substrate 4 and a piezoelectric body laye...
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WO/2022/153789A1 |
This circuit module (10) is provided with: a substrate (20) that has a first main surface (201); an electronic component (30) of an acoustic wave filter, said electronic component (30) being mounted on the first main surface (201); an in...
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WO/2022/153943A1 |
Provided is an elastic wave device capable of sufficiently suppressing ripples caused by Rayleigh waves. This elastic wave device has a piezoelectric layer 5 laminated directly or indirectly on a support substrate 3, and a first IDT el...
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WO/2022/150752A1 |
A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial lay...
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WO/2022/149541A1 |
The piezoelectric oscillation device is equipped with at least a core (5). The core (5) includes: a crystal oscillator (50) which has a three-layer structure and in which an oscillation part (11) is hermetically sealed; and a heater IC (...
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