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WO/2024/043346A1 |
The present invention addresses the problem of suppressing unwanted waves from occurring at a frequency lower than a resonant frequency and located near the resonant frequency in an acoustic wave device using bulk waves in a thickness sh...
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WO/2024/043342A1 |
Provided is an elastic wave device with which a filter device can be further reduced in size and an insertion loss can be reduced. An elastic wave device according to the present invention comprises: a piezoelectric film including a pi...
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WO/2024/043345A1 |
Provided is an elastic wave device that makes it possible to reduce the size of a filter apparatus and to increase the bandwidth of a pass band. A first elastic wave resonator 10 according to the present invention is provided with: a p...
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WO/2024/043299A1 |
Provided is an elastic wave device that makes it possible to miniaturize a filter device and increase the bandwidth of a passband. An elastic wave device 10 according to the present invention comprises: a piezoelectric film that includ...
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WO/2024/038831A1 |
Provided is an elastic wave device with which size reduction of a filter device can be achieved and electrical resistance can be reduced. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14;...
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WO/2024/039701A1 |
Drift-diffusion dynamics is investigated in a one-dimensional (1D) exciton guide at room temperature. Spatial engineering of the exciton energy in a WSe2 monolayer is achieved using local strain to confine as well as direct exciton trans...
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WO/2024/038875A1 |
Provided is an elastic wave device that makes it possible to achieve miniaturization of a filter device, and to reduce insertion loss. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14 of ...
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WO/2024/032882A1 |
Embodiments of the invention relate to an acoustic resonator device (100) for excitation of bulk acoustic waves (BAW) with enhanced power handling capabilities. The acoustic resonator device (100) has a composite piezoelectrical platelet...
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WO/2024/032440A1 |
A surface acoustic wave resonance apparatus and a forming method therefor, which relate to the technical field of semiconductors. The surface acoustic wave resonance apparatus comprises: a piezoelectric substrate; and an electrode struct...
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WO/2024/034603A1 |
Provided is an elastic wave device that makes it possible to reduce the size of a filter device, and to suppress degradation of filter characteristics. An elastic wave device 10 according to the present invention comprises: a piezoelec...
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WO/2024/034528A1 |
This elastic wave device for inducing oscillation of elastic waves comprises: a piezoelectric body layer containing lithium niobate; and an IDT electrode on the piezoelectric body layer. The Euler angle of the piezoelectric body layer is...
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WO/2024/027326A1 |
Disclosed in embodiments of the present application are a temperature control apparatus and a related device, which can effectively inhibit the influence of ambient temperature fluctuation on internal devices, and can improve the tempera...
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WO/2024/027735A1 |
The present invention relates to a quartz resonator and a manufacturing method therefor. The quartz resonator comprises: a quartz piezoelectric layer; a bottom electrode and a top electrode, one of the top electrode and the bottom electr...
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WO/2024/027737A1 |
The present invention relates to a quartz resonator, comprising a bottom electrode, a top electrode and a quartz piezoelectric layer, the quartz piezoelectric layer having an inverted highly-protruded structure comprising bosses; a packa...
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WO/2024/029061A1 |
This acoustic resonator comprises a first electrode (101), a piezoelectric element (102) and a second electrode (103). The first electrode (101) is constituted by a semiconductor doped with impurities. The piezoelectric element (102) is ...
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WO/2024/027734A1 |
The present invention relates to a quartz resonator and a manufacturing method therefor. The quartz resonator comprises: a bottom electrode; a top electrode; and a quartz piezoelectric layer, wherein one of the top electrode and the bott...
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WO/2024/027033A1 |
Various example embodiments relate to an acoustic resonator. The acoustic resonator may comprise a substrate, a piezoelectric membrane attached to the substrate, and a plurality of electrodes. The piezoelectric membrane presents a plural...
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WO/2024/029609A1 |
The present invention provides an elastic wave device that enables further size reduction of a filter device, and that can reduce electric resistance of wiring connected to a reference potential. An elastic wave device 10 according to ...
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WO/2024/029610A1 |
Provided is an elastic wave device that can promote miniaturization of a filter device and reduce insertion loss. An elastic wave device 10 according to the present invention comprises: a piezoelectric layer 14 made of lithium niobate;...
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WO/2024/029361A1 |
Provided is an elastic wave device capable of sufficiently suppressing unnecessary waves and transverse modes outside a passband. The elastic wave device of the present invention comprises a piezoelectric substrate including a piezoele...
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WO/2024/027736A1 |
The present invention relates to a quartz resonator and a manufacturing method therefor. The quartz resonator comprises: a resonant structure, comprising a quartz piezoelectric layer, a bottom electrode, and a top electrode, wherein one ...
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WO/2024/029360A1 |
Provided is an elastic wave device capable of suppressing unwanted waves outside a pass-band and a transverse mode, and to suppress degradation of resonance characteristics. This elastic wave device comprises a piezoelectric substrate ...
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WO/2024/027920A1 |
The invention relates to method (100) for producing a surface acoustic wave, SAW, resonator device (200), the method (100) comprising: obtaining (110) an Yttrium Aluminum Garnet, YAG, layer (210); forming (120) an interleave layer (220) ...
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WO/2024/027733A1 |
A quartz resonator and a manufacturing method therefor, further relating to an electronic device. The quartz resonator comprises: a bottom electrode (40); a top electrode (30); and a quartz piezoelectric layer (10) disposed between the b...
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WO/2024/025473A2 |
An apparatus for filtering is disclosed that implements twin double-mode surface-acoustic-wave filters with opposite polarities and a geometric offset. The apparatus includes a first double-mode surface-acoustic-wave structure comprising...
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WO/2024/022736A1 |
The present invention relates to a wireless end node, that comprises a Direct Sequence Spread Spectrum (DSSS) demodulator, wherein the DSSS demodulator is based on a double correlation algorithm, a data communications module configured t...
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WO/2024/023711A1 |
The present invention offers novel ways of achieving high degree of mechanical stress isolation and high accuracy of temperature sensing in quartz crystal resonators.
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WO/2024/024614A1 |
A quartz crystal vibration plate 2 comprises an outer frame part 23 and a vibrating part 22 formed to be thinner than the outer frame part 23. A perforation 2a is formed between the outer frame part 23 and the vibrating part 22. The oute...
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WO/2024/020769A1 |
The present disclosure relates to the technical field of communications, and provides a bulk acoustic resonator and a preparation method therefor, and an electronic device. The bulk acoustic resonator of the present disclosure comprises ...
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WO/2024/024741A1 |
In a crystal oscillator 101, hermetic sealing is performed by sandwiching a crystal vibration plate 2, on which first and second excitation electrodes 221, 222 are formed, between first and second sealing members 3, 4 disposed above and ...
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WO/2024/024778A1 |
Provided is an elastic wave resonator comprising a piezoelectric layer and an IDT electrode. The piezoelectric layer is piezoelectric. The IDT electrode is positioned on a first surface of the piezoelectric layer, and comprises a plurali...
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WO/2024/021933A1 |
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The bulk acoustic resonator comprises a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer arrange...
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WO/2024/025458A1 |
A bulk acoustic wave, BAW, (100) device with resonance-tuned layer stack is disclosed. The BAW device includes two acoustic resonators (102(A)), 102(B)) with top electrodes (104(A)), 104(B)) in different regions (108(A)), 108(B)) on a to...
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WO/2024/021844A1 |
The present invention relates to a bulk acoustic resonator and a manufacturing method therefor. The resonator comprises a substrate, a bottom electrode, an acoustic mirror, a top electrode, and a piezoelectric layer. The bottom electrode...
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WO/2024/016490A1 |
A single photon detection device (200) comprising an interference unit (100). The interference unit (100) comprises: a signal distribution module (110), configured to divide an input signal into a first signal and a second signal; a firs...
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WO/2024/016606A1 |
A semiconductor device, a communication apparatus and a manufacturing method therefor. The semiconductor device comprises: a first functional module, provided on a first substrate (100), and comprising a chip (101), an electrical connect...
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WO/2024/016095A1 |
The present application relates to the technical field of radio frequency micro-electro-mechanical systems. Provided are a filter unit and a preparation method therefor, and an electronic apparatus. The filter unit comprises: a resonant ...
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WO/2024/019142A1 |
IDT electrodes are fine and it is, therefore, necessary to improve the power tolerance to migration. This elastic wave device comprises: a piezoelectric layer; an electrode that is provided on the piezoelectric layer; and a cover part th...
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WO/2024/012653A1 |
The invention concerns a resonator filter (1) comprising a plurality coupled resonators (2); wherein in a stacking direction (S) the resonators (2) each having a rib (5) formed of piezoelectric material arranged between a first electrode...
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WO/2024/012311A1 |
A method for forming a surface acoustic wave resonance device, relating to the technical field of semiconductors. The method comprises: providing a piezoelectric substrate, the piezoelectric substrate comprising a first interval area, a ...
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WO/2024/014167A1 |
Provided is an elastic wave device in which delamination between an IDT electrode and a layer covering the IDT electrode is unlikely to occur. An elastic wave device 1 comprises: a support substrate 3; an intermediate layer 4 that is d...
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WO/2024/014204A1 |
Provided is an elastic wave device capable of lowering electrical resistance while increasing the power resistance of electrode fingers of an IDT electrode. An elastic wave device according to the present invention comprises: a piezoel...
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WO/2024/007404A1 |
A thin-film bulk acoustic resonator, comprising a substrate (1), an acoustic reflection structure (2) arranged on one side of the substrate (1), a bottom electrode (3) stacked on one side of the acoustic reflection structure (2), a piezo...
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WO/2024/009553A1 |
A resonance device (1) comprises: a resonator (10) which includes a vibration part (110), a holding part (140) that is placed on at least a part of the periphery of the vibration part (110), and a support arm (150) that connects the vibr...
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WO/2024/009555A1 |
A resonance device (1) comprises: a resonator (10) that has a vibrating part (110), a retention part (140) disposed at least in a portion of the surroundings of the vibrating part (110), and a supporting arm (150) that connects the vibra...
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WO/2024/009660A1 |
Provided is an elastic wave device that makes it possible to suppress unwanted waves and to suppress degradation of resonance characteristics. This elastic wave device comprises a piezoelectric substrate including a piezoelectric layer...
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WO/2023/202548A9 |
The present disclosure belongs to the technical field of bulk acoustic wave resonators. Provided are a bulk acoustic wave resonator, a method for preparing a bulk acoustic wave resonator, and an electronic device. The bulk acoustic wave ...
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WO/2024/002237A1 |
Embodiments of the present application relate to the technical field of resonators, and provide a surface acoustic wave resonator, a filter, and a communication device. The surface acoustic wave resonator can achieve a flat slowness curv...
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WO/2024/001087A1 |
Disclosed in the present invention are a preparation method for a film bulk acoustic resonator, and a film bulk acoustic resonator. The resonator comprises a silicon substrate, a bottom electrode layer, a piezoelectric layer and a top el...
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WO/2024/003001A1 |
The invention concerns a layer for an acoustic device, in particular for a micro acoustic radio frequency device. According to the invention, the layer has essentially a composition SiOxCyNz, wherein x, y and z > 0. Furthermore, the inve...
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