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Patent Searching and Data


Title:
デバイスを形成する方法およびデバイス
Document Type and Number:
Japanese Patent JP2013530519
Kind Code:
A
Abstract:
Interconnect structures having self-aligned dielectric caps are provided. At least one metallization level is formed on a substrate. A dielectric cap is selectively deposited on the metallization level.

Inventors:
ホラク、デヴィッド、ヴィー
野上 毅
ポノス、ショム
ヤン、チーチャオ
Application Number:
JP2013509071A
Publication Date:
July 25, 2013
Filing Date:
March 21, 2011
Export Citation:
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Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L21/768; H01L21/3065; H01L21/318; H01L23/522
Domestic Patent References:
JP2009528702A2009-08-06
JP2008205119A2008-09-04
JP2007335578A2007-12-27
JP2004200684A2004-07-15
JP2009164354A2009-07-23
JP2007184347A2007-07-19
JP2009528702A2009-08-06
Foreign References:
US0008028A1851-04-08
Attorney, Agent or Firm:
上野 剛史
太佐 種一
市位 嘉宏