Title:
METHOD AND APPARATUS FOR MANUFACTURING GROUP III NITRIDE CRYSTAL
Document Type and Number:
Japanese Patent JP2018177587
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride crystal, capable of manufacturing a high quality group III nitride crystal having less impurities in the crystal and a small dislocation density.SOLUTION: The method for manufacturing a group III nitride crystal comprises the steps of: preparing a mixed melt including alkali metal and a group III element in a reaction vessel; supplying gas including a nitrogen element into the reaction vessel; preparing a seed substrate separated from the surface of the mixed melt; heating the mixed melt to change a part thereof into vapor; and coating the seed substrate with a liquid film obtained by condensing the vapor of the mixed melt to grow a group III nitride crystal on the seed substrate.SELECTED DRAWING: Figure 1
Inventors:
MORI YUSUKE
IMAIDE KAN
OKAMOTO TAKATOSHI
IMAIDE KAN
OKAMOTO TAKATOSHI
Application Number:
JP2017079191A
Publication Date:
November 15, 2018
Filing Date:
April 12, 2017
Export Citation:
Assignee:
UNIV OSAKA
PANASONIC CORP
PANASONIC CORP
International Classes:
C30B29/38; C30B19/02
Attorney, Agent or Firm:
Mitsuo Tanaka
Samejima Mutsumi
Hiroshi Okabe
Kazuhisa Inaba
Samejima Mutsumi
Hiroshi Okabe
Kazuhisa Inaba