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Title:
DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2019211785
Kind Code:
A
Abstract:
To provide a manufacturing method capable of reducing cost in a semiconductor device which has high opening ratio and has a capacitive element capable of increasing charge capacity; or provide a manufacturing method capable of reducing cost in the semiconductor device capable of reducing power consumption.SOLUTION: A mask formed by a process of using a multi-gradation photo mask is used to form a metal oxide film having a channel region, the metal oxide film functioning as a pixel electrode, and a source electrode and a drain electrode. An oxide insulation film is further formed on the metal oxide film having the channel region, and a nitride insulation film is formed on the oxide insulation film and the metal oxide film functioning as the pixel electrode; as a result, conductivity of the metal oxide film functioning as the pixel electrode can be improved.SELECTED DRAWING: Figure 3

Inventors:
SUZUKI YUKIE
ONO KOJI
GOTO NAOHITO
KAMINAGA MASAMI
IGUCHI TAKAHIRO
Application Number:
JP2019153934A
Publication Date:
December 12, 2019
Filing Date:
August 26, 2019
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G09F9/30; G02F1/1368; H01L27/32; H01L29/786; H01L51/50; H05B33/02; H05B33/14
Domestic Patent References:
JP2005077822A2005-03-24
JP2001144301A2001-05-25
JP2000323698A2000-11-24
JP2010032642A2010-02-12
Foreign References:
US20080079002A12008-04-03



 
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