Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020096000
Kind Code:
A
Abstract:
To reduce noise of a semiconductor device.SOLUTION: A semiconductor device comprises a first semiconductor region, a gate electrode, and a second semiconductor region. In the first semiconductor region, there are disposed a source region, a channel formation region, and a drain region which have the same conduction type. The gate electrode is disposed adjacent to the channel formation region via an insulating film disposed on a surface of the first semiconductor region. On a surface different from that where the gate electrode is disposed, the second semiconductor region is disposed adjacent to the channel formation region so as to form a depletion layer in a channel formation region.SELECTED DRAWING: Figure 2
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Inventors:
MATSUMOTO KOICHI
Application Number:
JP2018230627A
Publication Date:
June 18, 2020
Filing Date:
December 10, 2018
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
H01L21/336; H01L21/28; H01L21/8234; H01L27/06; H01L29/78
Attorney, Agent or Firm:
Kenichiro Matsuo
Yasuo Ichikawa
Yasuo Ichikawa