Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2021150346
Kind Code:
A
Abstract:
To provide a semiconductor storage device with high reliability.SOLUTION: A semiconductor storage device includes a semiconductor substrate, a memory cell array layer, and a first wiring layer. The semiconductor substrate includes first to third regions and fourth to sixth regions. The memory cell array layer includes a plurality of first conductive layers extending in a second direction from the first region to the third region and stacked in a first direction, a plurality of first and second semiconductor layers provided in the first and second regions, extending in the first direction, and facing the first conductive layers, a plurality of first and second contacts provided in the fourth and sixth regions and extending in the first direction, and a plurality of third semiconductor layers provided in the fifth region and extending in the first direction. The first wiring layer includes a plurality of first wires connected to the first semiconductor layers and the second contacts in the first region and the fourth region, and a plurality of second wires connected to the second semiconductor layers and a plurality of third contacts in the third region and the sixth region.SELECTED DRAWING: Figure 19
Inventors:
SHIRAI KAITO
Application Number:
JP2020045861A
Publication Date:
September 27, 2021
Filing Date:
March 16, 2020
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L27/11582; H01L21/336; H01L27/11556; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Kisaragi International Patent Business Corporation