【発明の名称】フォトマスクブランク、フォトマスク、及びそれらの製造方法並びに微細パターン形成方法

Title:

【発明の名称】フォトマスクブランク、フォトマスク、及びそれらの製造方法並びに微細パターン形成方法

Document Type and Number:

Japanese Patent JP3276954

Kind Code:

B2

Abstract:

In obtaining a photomask blank 1 by disposing a sputtering target in a vacuum chamber and forming thin films 3, 4, and 5 with a three-layer construction of CrN/CrC/CrON over a transparent substrate 2 by reactive sputtering, the thin films are formed in a mixed gas atmosphere containing helium, and the helium gas flux in the mixed gas is controlled such that the crystal grain diameter of the CrC thin film, which is the thickest film, will be 3 to 7 nm. This yields a photomask blank having thin films with low film stress, having good film quality, and which can be produced at a high yield in mass production.

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Inventors:

Masaru Mitsui
Haruhiko Yamagata
Masao Ushida

Application Number:

JP2000562802A

Publication Date:

April 22, 2002

Filing Date:

July 30, 1999

Export Citation:

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Assignee:

Hoya Co., Ltd.

International Classes:

C23C14/00; C23C14/06; G03F1/46; G03F1/50; G03F1/54; G03F1/58; (IPC1-7): G03F1/08; H01L21/027

Domestic Patent References:

JPH08225936A	1996-09-03
JPS61272746A	1986-12-03
JPH05297570A	1993-11-12
JPH049847A	1992-01-14
JPH02242252A	1990-09-26

Attorney, Agent or Firm:

Setsuo Aniya (2 outside)

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