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Title:
【発明の名称】窒化物半導体レーザ素子
Document Type and Number:
Japanese Patent JP3329753
Kind Code:
B2
Inventors:
Shinichi Nagahama
Shuji Nakamura
Application Number:
JP35518798A
Publication Date:
September 30, 2002
Filing Date:
December 14, 1998
Export Citation:
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Assignee:
Nichia Corporation
International Classes:
H01S5/00; H01S5/323; H01S5/343; (IPC1-7): H01S5/323
Domestic Patent References:
JP10290047A
JP9293935A
JP5190903A
JP7201745A
Other References:
【文献】国際公開97/11518(WO,A1)



 
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