Title:
化学気相蒸着法による金属窒化膜形成方法及びこれを用いた半導体装置の金属コンタクト形成方法
Document Type and Number:
Japanese Patent JP3998830
Kind Code:
B2
Abstract:
A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film has low resistivity and a low content of Cl even with excellent step coverage, and it can be formed at a temperature of 500° C. or lower. Also, a deposition speed, approximately 20 Å/cycle, is suitable for mass production.
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Inventors:
Kang Nao
Park Chang Soo
Cai Yui
Lee Sou Shinobu
Park Chang Soo
Cai Yui
Lee Sou Shinobu
Application Number:
JP27566498A
Publication Date:
October 31, 2007
Filing Date:
September 29, 1998
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
C01B21/076; C23C16/34; C23C16/08; C23C16/18; C23C16/455; H01L21/285; H01L21/768; C23C16/44; H01L21/02
Domestic Patent References:
| JP1143221A | ||||
| JP9077593A | ||||
| JP5136087A | ||||
| JP5129445A | ||||
| JP2093071A |
Attorney, Agent or Firm:
Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Atsushi Nogami
Yasuo Nara
Etsuko Saito