Title:
半導体装置およびその作製方法並びに電子機器
Document Type and Number:
Japanese Patent JP4159633
Kind Code:
B2
Inventors:
Shunpei Yamazaki
Hisashi Otani
Kenji Fukunaga
Hisashi Otani
Kenji Fukunaga
Application Number:
JP27344497A
Publication Date:
October 01, 2008
Filing Date:
September 19, 1997
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786
Domestic Patent References:
| JP3293641A |