Title:
温度補正されたデータ読み出し可能な不揮発性メモリ
Document Type and Number:
Japanese Patent JP4301947
Kind Code:
B2
Abstract:
A novel non-volatile memory is disclosed. The non-volatile memory includes an array of data storage cells that individually include a storage element such as a floating gate, a control gate and first and second source/drain terminals. A current source provides a current to the first source/drain terminal of the data storage element. A node is electrically connected to the second source/drain terminal of the data storage element. A bias circuit provides a bias voltage to the node. The bias voltage varies with temperature in a manner approximately inverse to the thermal variation of the threshold voltage of the data storage element. A control gate voltage circuit provides a voltage level to the control gate of the data storage cell.
Inventors:
Sernia, Raoul-Adrian
Application Number:
JP2003543030A
Publication Date:
July 22, 2009
Filing Date:
October 24, 2002
Export Citation:
Assignee:
SanDisk Corporation
International Classes:
G11C16/06; G11C7/12; G11C16/02; G11C16/04; G11C16/26; G11C16/28
Domestic Patent References:
| JP3044895A | ||||
| JP2000011671A | ||||
| JP5006682A | ||||
| JP2001229686A |
Attorney, Agent or Firm:
Toshi Inoguchi
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