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Title:
温度補正されたデータ読み出し可能な不揮発性メモリ
Document Type and Number:
Japanese Patent JP4301947
Kind Code:
B2
Abstract:
A novel non-volatile memory is disclosed. The non-volatile memory includes an array of data storage cells that individually include a storage element such as a floating gate, a control gate and first and second source/drain terminals. A current source provides a current to the first source/drain terminal of the data storage element. A node is electrically connected to the second source/drain terminal of the data storage element. A bias circuit provides a bias voltage to the node. The bias voltage varies with temperature in a manner approximately inverse to the thermal variation of the threshold voltage of the data storage element. A control gate voltage circuit provides a voltage level to the control gate of the data storage cell.

Inventors:
セルニア,ラウル-エイドリアン
Application Number:
JP2003543030A
Publication Date:
July 22, 2009
Filing Date:
October 24, 2002
Export Citation:
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Assignee:
SanDisk Corporation
International Classes:
G11C16/06; G11C7/12; G11C16/02; G11C16/04; G11C16/26; G11C16/28
Domestic Patent References:
JP3044895A
JP2000011671A
JP5006682A
JP2001229686A
Attorney, Agent or Firm:
井ノ口 壽