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Title:
フォトレジストおよびエッチング残渣の除去方法
Document Type and Number:
Japanese Patent JP4422493
Kind Code:
B2
Abstract:
A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

Inventors:
Baras Bra Manium, Baid Yanathan
Masaaki Hagiwara
Nishimura Eiichi
Inazawa Goichiro
Hatamura Yasunori
Application Number:
JP2003586925A
Publication Date:
February 24, 2010
Filing Date:
January 17, 2003
Export Citation:
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Assignee:
INTEL CORPORATION
International Classes:
H01L21/3065; H01L21/00; H01L21/302; H01L21/304; H01L21/31; H01L21/461
Domestic Patent References:
JP2001274139A
JP6104224A
JP2001102361A
JP2001313280A
Foreign References:
WO2002003426A1
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Nakamura Makoto
Muramatsu Sadao
Ryo Hashimoto



 
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