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Patent Searching and Data


Title:
高純度Ni-V合金、同Ni-V合金からなるターゲット及び同Ni-V合金薄膜並びに高純度Ni-V合金の製造方法
Document Type and Number:
Japanese Patent JP4447556
Kind Code:
B2
Abstract:
Provided are a high purity Ni-V alloy, high purity Ni-V alloy target and high purity Ni-V alloy thin film wherein the purity of the Ni-V alloy excluding Ni, V and gas components is 99.9wt% or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni-V alloy, high purity Ni-V alloy target and high purity Ni-V alloy thin film having a purity of 99.9wt% or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni-V alloy capable of effectively reducing the foregoing impurities.

Inventors:
新藤 裕一朗
山越 康廣
Application Number:
JP2005514540A
Publication Date:
April 07, 2010
Filing Date:
September 08, 2004
Export Citation:
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Assignee:
日鉱金属株式会社
International Classes:
C23C14/34; C22B9/22; C22B23/06; C22C19/03
Domestic Patent References:
JP2003213406A
JP2003213405A
Attorney, Agent or Firm:
小越 勇