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Patent Searching and Data


Title:
ウエーハの研磨方法
Document Type and Number:
Japanese Patent JP4608856
Kind Code:
B2
Abstract:
There is provided a method for polishing a wafer in which linear defects are not generated. The polishing method comprises the steps of: holding a wafer on a rotatable wafer holding plate; and polishing a surface of the being in contact with a polishing cloth adhered on a rotatable table in such a state that a polishing agent is supplied onto the polishing cloth, wherein the polishing agent is an alkaline solution which contains silica having particles each in the shape of almost an sphere as a main component and further an organic base or a salt thereof. A quaternary ammonium hydroxide is used as the organic base or the salt thereof.

Inventors:
高松 直之
Application Number:
JP2003278970A
Publication Date:
January 12, 2011
Filing Date:
July 24, 2003
Export Citation:
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Assignee:
信越半導体株式会社
International Classes:
H01L21/304; B24B37/00; C09G1/02; H01L21/306
Domestic Patent References:
JP2003041239A
JP2003206475A
JP2003188122A
JP2001011433A
JP2002338951A
JP2003136406A
JP2003124160A
JP2003197591A
JP2002190458A
JP11111657A
JP63074911A
Foreign References:
WO2003053602A1
Attorney, Agent or Firm:
石原 詔二
石原 進介