Title:
回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定
Document Type and Number:
Japanese Patent JP4633254
Kind Code:
B2
Abstract:
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopy ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.
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Inventors:
Jew, Epin
Avine Leharim, Ibrahim
Avine Leharim, Ibrahim
Application Number:
JP2000534831A
Publication Date:
February 16, 2011
Filing Date:
February 25, 1999
Export Citation:
Assignee:
KLA-Tenker Corporation
International Classes:
G01B11/02; G01B11/06; G01N21/21; G01N21/27; G01N21/95; G01N21/956; G03F7/20; H01L21/66
Domestic Patent References:
| JP8255751A | ||||
| JP9237812A | ||||
| JP8261727A |
Attorney, Agent or Firm:
Toshi Inoguchi