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Title:
磁気的に軟らかい基準層を有する磁気抵抗素子のための読出し方法
Document Type and Number:
Japanese Patent JP4658102
Kind Code:
B2
Abstract:
A magneto-resistive device(10) includes data and reference layers (12 and 14) having different coercivities. Each layer has a magnetization that can be oriented in either of two directions. The memory device (10) may be read by temporarily setting the magnetization of the reference layer to a known orientation (110, 210), and determining a resistance state of the device (112, 212).

Inventors:
Run Tea Trang
Manish Sharma
Application Number:
JP2007233234A
Publication Date:
March 23, 2011
Filing Date:
September 07, 2007
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
G11C11/15; G11C11/16; H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
JP2001067862A
JP2001237472A
JP2003506812A
Foreign References:
WO2001009898A1
Attorney, Agent or Firm:
Mikio Hatta
Yasuo Nara
Katsuyuki Utani