Title:
半導体産業用水素化物ガスの精製
Document Type and Number:
Japanese Patent JP4664913
Kind Code:
B2
Abstract:
A method for hydride gas purification uses materials having at least one lanthanide metal or lanthanide metal oxide. The method reduces contaminants to less than 100 parts per billion (ppb), preferably 10 ppb, more preferably 1 ppb. The material can also include transition metals and transition metal oxides, rare earth elements and other metal oxides. The invention also includes materials for use in the method of the invention.
Inventors:
Alvarez, Daniel, Giunia
Spiegelman, Jeffrey Jay
Kutuku, Yoshiyoshi Tay
Tram Doan, Nguyen
Lev, Daniel A
Scoggins, Troy Bee
Spiegelman, Jeffrey Jay
Kutuku, Yoshiyoshi Tay
Tram Doan, Nguyen
Lev, Daniel A
Scoggins, Troy Bee
Application Number:
JP2006521217A
Publication Date:
April 06, 2011
Filing Date:
July 21, 2004
Export Citation:
Assignee:
Entegris Incorporated
International Classes:
C01B6/34; B01J20/06; C01B3/56; C01B25/06; C01B33/04; C01B35/02; C01C1/02
Domestic Patent References:
| JP2003200048A | ||||
| JP11114423A | ||||
| JP10156183A | ||||
| JP2002324567A |
Foreign References:
| WO2003037485A1 |
Attorney, Agent or Firm:
Yoshio Kawaguchi
Makoto Ono
Kanayama Sage
Osaki Katsuma
Mitsuaki Tsubokura
Makoto Ono
Kanayama Sage
Osaki Katsuma
Mitsuaki Tsubokura